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| | Publications of Prof M. Osinski |
 | | Tottori, J. Wang, H. Sato, Y. Ishikawa, T. Sugahara, K. Yamashita, D. Youn, M. Osin´ski, and S. Sakai, “Sublimation growth and characterization of thick GaN layers on SiO2/GaN mask patterns”, Abstracts, 45th Spring Meeting, 1998, of the Japan Society of Applied Physics and Related Sciences, Tokyo, Japan, 1-4 April, 1998, p. |
 | | Wang, S. Tottori, M. Hao, H. Sato, S. Sakai, and M. Osin´ski, “Epitaxial lateral overgrowth of GaN by sublimation method and by MOCVD”, Optoelectronic Materials and Devices (M. Osin´ski and Y.-K. Su, Eds.), SPIE Photonics Taiwan '98 Symposium, Taipei, Taiwan, 9-11 July, 1998, Proceedings of SPIE, Vol. |
 | | Wang, R. Fareed, M. Hao, S. Mahanty, S. Tottori, Y. Ishikawa, T. Sugahara, Y. Morishima, K. Nishino, M. Osi_ski, and S. Sakai, “Lateral overgrowth mechanisms and microstructural characteristics of bulk-like GaN layers grown by sublimation method”, Journal of Applied Physics 85, no. 3, pp. |
| www.chtm.unm.edu /publications_osinski.html (12222 words) |
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