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| | Microwave power resistors, Aluminium Nitride AlN power chip resistors, 1P5W, 1P5 watts, 112GHz 3dB frequency, 50x25 ... (Site not responding. Last check: 2007-10-15) |
 | | Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. |
 | | GENERAL DIE INFORMATION Substrate Aluminium Nitride AlN, Thickness (mils) 40±3,Die size (mils) LLL x WWW ±2 Bonding pads min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier, Backside metal Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. |
 | | All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. |
| www.usmicrowaves.com /res/power_aln/rp15015030-ALN2W-25w-3P5ghz_microwave_power_wraparound_resistors.htm (1039 words) |
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