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Topic: Aluminium arsenide

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	Preparation of Aluminium Arsenide by a Vapour Phase Transport Reaction
		Preparation of Aluminium Arsenide by a Vapour Phase Transport Reaction
		LITTLE work has been reported on the preparation of the semi-conducting compound aluminium arsenide, mainly because of the practical difficulties involved.
		Preparation from the melt is difficult because of the high melting point of the compound (about 1,700° C) and of the extreme reactivity of aluminium at this temperature.
	www.nature.com /nature/journal/v199/n4900/abs/1991287a0.html (120 words)

	aluminium
		Aluminium or aluminum (in North American English) is a chemical element in the periodic table with the symbol Al and atomic number 13.
		Aluminium is a soft, lightweight and but strong metal with a dull silver-gray appearance, due to a thin layer of oxidation that forms quickly when it is exposed to air and which prevents further corrosion.
		Aluminium was, when it was first discovered, extremely difficult to separate from the rocks it was part of and, since the whole of Earth's aluminium was bound up in the form of compounds, the most difficult metal on earth to get, despite the fact that it is one of the planet's most common.
	www.fact-library.com /aluminium.html (1410 words)

	Hetero-epitaxially grown compound semiconductor substrate - Patent 5484664 (Site not responding. Last check: 2007-10-28)
		Alternatively, it is proposed to interpose a polycrystalline gallium arsenide buffer layer between the silicon substrate and the gallium arsenide layer to absorb the mismatching of the lattice constant and thermal expansion.
		The thickness of the aluminium arsenide layer is chosen to be sufficient to relax the stress caused as a result of the mismatching in the lattice constant and thermal expansion between the silicon wafer and the gallium arsenide substrate.
		The overall structure of the gallium arsenide substrate thus obtained comprises the silicon wafer I, the aluminium arsenide buffer layer II and the gallium arsenide substrate layer III as shown in FIG.
	www.freepatentsonline.com /5484664.html (3895 words)

	Aluminium (Site not responding. Last check: 2007-10-28)
		Aluminium (or aluminum in North American English; see spelling below) is the chemical element in the periodic table with the symbol Al and atomic number 13.
		A silvery and ductile member of the poor metal group of elements, aluminium is found primarily as the ore bauxite and is remarkable for its resistance to oxidation (due to the phenomenon of passivation), its strength, and its light weight.
		Aluminium is used in many industries to make millions of different products and is very important to the world economy.
	www.kiwipedia.com /en/aluminium.html (129 words)

	Aluminium gallium arsenide
		Aluminium gallium arsenide (also Aluminum gallium arsenide) (Al
		As) is a semiconductor with the very nearly the same lattice constant[?] as GaAs, but a larger bandgap.
		The text of this article is licensed under the GFDL.
	www.ebroadcast.com.au /lookup/encyclopedia/al/Aluminium_gallium_arsenide.html (97 words)

	United States Patent Application: 0020102756 (Site not responding. Last check: 2007-10-28)
		Semiconductor laser chip according to one of claims 1 to 4, in which a trench is introduced between the semiconductor laser element and the beam shaper.
		Method according to claim 9 or 10, in which a trench is introduced between the semiconductor laser element and the beam shaper region or the beam shaper.
		[0036] A desired aluminium concentration profile is formed in the beam shaper region and a selective oxidation of the beam shaper region is subsequently carried out in such a manner that the beam shaper is configured in the desired shape depending on the aluminium concentration profile.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20020102756&OS=20020102756&RS=20020102756 (2146 words)

	Method of manufacturing a semiconductor device - Patent 4049488 (Site not responding. Last check: 2007-10-28)
		Furthermore the composition (aluminium content) of the region to be etched should differ considerably from the region not to be etched.
		At this pH the etching rate of gallium arsenide is immeasurably small and aluminium gallium arsenide is etched at a rate of approximately 10.mu.m per hour.
		The thickness of the n-type aluminium gallium arsenide layer 4 decreases slightly or does not decrease so that the example described also illustrates how layer 2 is etched selectively relative to layer 4.
	www.freepatentsonline.com /4049488.html (1964 words)

	Encyclopedia: Gallium-arsenide (Site not responding. Last check: 2007-10-28)
		Gallium arsenide (GaAs) is a chemical compound composed of gallium and arsenic.
		It is an important semiconductor, and is used to make devices such as microwave frequency integrated circuits (ie, MMICs), infrared light-emitting diodes and laser diodes.
		The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape of the nonconductive depletion layer within a semiconductor material, thus controlling the conductivity of a channel in that material.
	www.nationmaster.com /encyclopedia/Gallium_arsenide (1832 words)

	Organometallic complexes of aluminium, gallium and indium - Patent 5834058 (Site not responding. Last check: 2007-10-28)
		A method for the chemical vapour phase deposition of aluminium, gallium, or indium on a substrate which comprises contacting the substrate with a volatile organometallic gallium or indium in the vapour phase, wherein there is used an organometallic aluminium, gallium or indium complex according to claim 1.
		A method for the chemical vapour phase deposition of aluminium, gallium, or indium on a substrate which comprises contacting the substrate with a volatile organometallic gallium or indium in the vapour phase, wherein there is used an organometallic aluminium, gallium or indium complex according to claim 2.
		A method for the chemical vapour phase deposition of aluminium, gallium, or indium on a substrate which comprises contacting the substrate with a volatile organometallic gallium or indium in the vapour phase, wherein there is used an organometallic aluminium, gallium or indium complex according to claim 3.
	www.freepatentsonline.com /5834058.html (2934 words)

	Radio-Electronics.Com :: High Electron Mobility Transistor (HEMT)
		Gallium arsenide is generally used because it provides a high level of basic electron mobility and this is crucial to the operation of the device.
		First an intrinsic layer of gallium arsenide is set down on the semi-insulating gallium arsenide layer.
		Its purpose is to ensure the separation of the hetero-junction interface from the doped aluminium gallium arsenide region.
	www.radio-electronics.com /info/data/semicond/hemt/hemt.php (876 words)

	Attaching amino acids to electronic device materials (May 2005) - News - nanotechweb.org
		The silica, silicon nitride and aluminium surfaces were, on the whole, more adherent than the gallium arsenide and palladium surfaces.
		Using molecular beam epitaxy, they created a layered structure of gallium arsenide and aluminium gallium arsenide, which they etched to expose aluminium gallium arsenide veins.
		As long as the sizes and spacing of the aluminium gallium arsenide veins matched with the length of the peptide sequences, the central aspartic acid sections of the peptides were able to adhere to the veins without interference from the leucine sections.
	nanotechweb.org /articles/news/4/5/10/1 (648 words)

	Gallium Arsenide - as a Photovoltaic Material (Site not responding. Last check: 2007-10-28)
		Gallium arsenide (GaAs) is a compound semiconductor: a mixture of two elements, gallium (Ga) and arsenic (As).
		Gallium is a by-product of the smelting of other metals, notably aluminium and zinc, and it is rarer than gold.
		One of the greatest advantages of gallium arsenide and its alloys as PV cell materials is the wide range of design options possible.
	www.azom.com /details.asp?ArticleID=1166 (591 words)

	Aluminium gallium arsenide - Encyclopedia Glossary Meaning Explanation Aluminium gallium arsenide (Site not responding. Last check: 2007-10-28)
		Aluminium gallium arsenide - Encyclopedia Glossary Meaning Explanation Aluminium gallium arsenide.
		Here you will find more informations about Aluminium gallium arsenide.
		Aluminium gallium arsenide (also Aluminum gallium arsenide) (Al x
	www.encyclopedia-glossary.com /en/Aluminium-gallium-arsenide.html (179 words)

	Chemical compound - Wikipedia, the free encyclopedia (Site not responding. Last check: 2007-10-28)
		In general, this fixed ratio must be fixed due to some sort of physical property, rather than an arbitrary man-made selection.
		This is why materials such as brass, the superconductor YBCO, the semiconductor aluminium gallium arsenide, or chocolate are considered mixtures or alloys rather than compounds.
		A defining characteristic of a compound is that it has a chemical formula.
	www.newlenox.us /project/wikipedia/index.php/Chemical_compound (261 words)

	Read about Aluminium gallium arsenide at WorldVillage Encyclopedia. Research Aluminium gallium arsenide and learn about ... (Site not responding. Last check: 2007-10-28)
		Read about Aluminium gallium arsenide at WorldVillage Encyclopedia.
		Research Aluminium gallium arsenide and learn about Aluminium gallium arsenide here!
		Aluminium gallium arsenide (also Aluminum gallium arsenide) (
	encyclopedia.worldvillage.com /s/b/Aluminium_gallium_arsenide (115 words)

	CONK! Encyclopedia: Light-emitting_diode (Site not responding. Last check: 2007-10-28)
		Most "white" LEDs in production today use a 450 nm â“ 470 nm blue GaN (gallium nitride) LED covered by a yellowish phosphor coating usually made of cerium-doped yttrium aluminium garnet (Ce :YAG) crystals which have been powdered and bound in a type of viscous adhesive.
		The LED chip emits blue light, part of which is converted to yellow by the Ce The single crystal form of Ce :YAG is actually considered a scintillator rather than a phosphor.
		The pale yellow emission of the Ce :YAG can be tuned by substituting the cerium with other rare earth elements such as terbium and gadolinium and can even be further adjusted by substituting some or all of the aluminium in the YAG with gallium.
	www.conk.com /search/encyclopedia.cgi?q=Light-emitting_diode (2671 words)

	Aluminium gallium arsenide - Wikipedia, the free encyclopedia
		The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.
		Extensive site on the physical properties of aluminium gallium arsenide
		This page was last modified 03:44, 16 July 2005.
	www.wikipedia.org /wiki/Aluminium_gallium_arsenide (128 words)

	ABC Online Forum (Site not responding. Last check: 2007-10-28)
		These included five metals (gold, palladium, platinum, titanium and aluminium), two semiconductors (gallium arsenide and aluminium gallium arsenide) and two insulators (silicon nitride and silica).
		The silica, silicon nitride and aluminium surfaces were generally more adherent than the gallium arsenide and palladium surfaces.
		The thickness of the layers or veins was matched to a peptide sequence that contained Asp -- an amino acid that adheres to AlGaAs -- at its centre, surrounded on either side by Leu, which does not.
	www2b.abc.net.au /science/k2/stn/newposts/1694/topic1694601.shtm (416 words)

	Method of fabricating HEMT device with selective etching of gallium arsenide antimonide - Patent 5118637
		Conventionally, there is a known DCFL device comprising an enhancement-mode FET and a depletion mode FET both formed on a common semi-insulating gallium arsenide (GaAs) substrate as is disclosed in the U.S. Pat.
		According to this procedure, the etching is stopped exactly at a desired depth as a result of use of the undoped or doped AlGaAs layer, and the enhancement-mode FET and the depletion-mode FET are formed with an exactly controlled threshold voltage.
		Further, the present invention is not limited to these embodiments but various variations and modifications may be made without departing from the scope of the present invention.
	www.freepatentsonline.com /5118637.html (3709 words)

	Rosangela Almeida Ribeiro (Site not responding. Last check: 2007-10-28)
		Pulpal response of primary teeth of dogs pulpotomized and irradiated or not by a low power gallium aluminium arsenide semiconductor laser.
		This study evaluated histologically the pulpal response of primary teeth of dogs pulpotomized and irradiated or not by a low power gallium aluminium arsenide semiconductor laser by using the upper and lower second bicuspids and first molars.
		The pulpal conditions became more severe in Group III with evidence of total necrosis in 60% of the teeth.
	www.lelo.fo.usp.br /teses/fousp/rosangela_almeida_ribeiro1.htm (204 words)

	Energy-Gap Values for Aluminium Gallium Arsenide
		Earlier papers giving data on the energy gap values for Al x
		C C Shen and D H Hartman in "Gallium Arsenide Technology"
		D K Ferry; published by Howard W Sams Inc, USA, 1985): E
	www.semiconductors.co.uk /eg(algaas).htm (132 words)

	Semiconductor device - US Patent 5023675 (Site not responding. Last check: 2007-10-28)
		a third semiconductor layer of n-type gallium arsenide antimonide formed as a cap layer on the top surface of the second semiconductor layer and having a window defined therein so as to expose said top surface in a predetermined region thereof;
		a third semiconductor layer of n-type gallium arsenide antimonide formed on the top surface of the second semiconductor layer, said third semiconductor layer having a first window defined therein, in correspondence to and for exposing said first, predetermined top surface region of said second semiconductor layer;
		a fifth semiconductor layer of n-type gallium arsenide antimonide formed on said fourth semiconductor layer, said fifth semiconductor layer having a second window defined therein, in correspondence to and for exposing said second, predetermined top surface region of said fourth semiconductor layer;
	www.patentstorm.us /patents/5023675.html (3615 words)

	PhysicsWeb - Quantum logic gate lights up
		Now Steel and co-workers at Michigan, Michigan State, the Naval Research Laboratory and the University of California at San Diego have demonstrated the first all-optical quantum gate in a semiconductor quantum dot.
		Steel and co-workers grew a thin gallium arsenide layer 4.2 nm thick between two 25 nm aluminium gallium arsenide barriers to make a quantum dot.
		Electrons are trapped in the dot because the gallium arsenide layer has a smaller energy band-gap than the surrounding material.
	www.physics.lsa.umich.edu /nea/news/articles/August03/logic.htm (462 words)

	Aluminium gallium arsenide - Encyclopedia, History and Biography
		Aluminium gallium arsenide - Encyclopedia, History and Biography
		This page was last modified 22:38, 14 Dec 2004.
		The article about Aluminium gallium arsenide contains information related to Aluminium gallium arsenide and External link.
	www.arikah.net /encyclopedia/Aluminium_gallium_arsenide (144 words)

	Chemistry and Industry : Nuclear spin could be altered for computer RAM. (Physics).(Gallium arsenide semiconductor ... (Site not responding. Last check: 2007-10-28)
		They created a gate-type device, called a field effect transistor made of aluminium gallium arsenide.
		When a powerful magnetic field is applied, the electrons passing across the device can flip the spin of the gallium arsenide.
		As the spins are flipped, there is a change in the device's ability to conduct electrons (resistance).
	static.highbeam.com /c/chemistryandindustry/january212002/nuclearspincouldbealteredforcomputerramphysicsgall/index.html (288 words)

	Encyclopedia: Aluminum gallium arsenide (Site not responding. Last check: 2007-10-28)
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		Updated 250 days 9 hours 2 minutes ago.
		Click for other authoritative sources for this topic (summarised at Factbites.com).
	www.nationmaster.com /encyclopedia/Aluminum-gallium-arsenide (156 words)

	III-Vs Review
		Physicist Alfred Forchel at the University of Würzburg, Germany, led been team leader in the creation of a 'laboratory' inside a microscopic pillar made from stacked layers of gallium arsenide and aluminium arsenide.
		Another physicist Galina Khitrova, at the University of Arizona, Tucson, has built a gallium arsenide crystal atom by atom, leaving room for the quantum dots to be added as the crystal grew.
		The tiny cavity inside a crystal makes an ideal laboratory for quantum experiments, according to two teams who have entangled light and matter inside a solid for the first time and should assist in the study of quantum entanglement.
	www.three-fives.com /optoelectronic_news/november04_opto_news/111104GaAS_and_quantum_entanglement.htm (246 words)

	lllt - laser therapy -. Laser Therapy (LLLT) science many LLLT abstracts
		The purpose of this study was to evaluate (in vivo) the effects of low-intensity Arsenide Gallium Aluminium laser application post-cavity preparation class I. Six patients with bilateral pre-molars and molars indicated to extraction for orthodontics aim were selected.
		Thawer HA; Houghton PE The purpose of the present study was to examine the effects of laser irradiation on the growth and development of fetal limb tissue.
		After surgery, 16 received a single dose of gallium aluminum arsenide laser to their transected MCL for 7.5 minutes (n = 8) or 15 minutes (n = 8) and eight served as control with placebo laser, while the sham group didn't receive any treatment.
	www.laser-world.com /lllt/lllt_science9.htm (11500 words)

	Microscope sketches quantum circuits (August 2003) - News - nanotechweb.org
		Erasable lithography could be used in experiments to study quantum phenomena and may also provide a route to the fabrication of a solid-state quantum computer (R Crook et al.
		Rolf Crook and colleagues used an atomic force microscope to define quantum electronic components - such as quantum wires and dots - on the surface of a gallium arsenide wafer.
		The tip of the microscope, which was biased to -6 volts, "drew" patterns of charge on the surface, and these patterns depleted electrons from a two-dimensional "sheet" of electrons in a layer of aluminium gallium arsenide beneath the surface.
	nanotechweb.org /articles/news/2/8/9/1 (419 words)

	diener electronic : glossary of terms (Site not responding. Last check: 2007-10-28)
		Note: In order to find words you are looking for, please use the search function of your browser (press CTRL+F at the same time and enter your searchword) or simply click on the letters of the alphabet below to find the corresponding terms beginning with this letter.
		ABS, Acid, Acrylic, Activation, Active species, Adhesion, Adhesion promoters, Adsorption, AFM, Aluminium, Aluminium Oxide, Anisotropic, Anode, Antiadhesive layers, Applications, Arc, Areas of application, Argon (Ar), Auger effect, Automotive engineering,
		Gallium Arsenide, Gas discharge, GDOS, Generator, Glass, Glow,
	www.plasma-us.com /3-0-glossary-of-terms.html (333 words)

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