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Topic: Aluminium gallium arsenide

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	Gallium (Site not responding. Last check: 2007-10-08)
		Gallium scintography is a pulmonary imaging technique which can be used in conjunction with an initial chest radiograph to evaluate workers at risk of developing occupational lung disease.
		The dust of the oxide, nitride and arsenide of gallium was generally toxic when introduced into the respiratory system (intratracheal injections in white rats), causing dystrophy of the liver and kidneys.
		The high toxicity of the acetate, citrate and chloride of gallium was demonstrated by intraperitoneal injection, leading to death of animals from paralysis of the respiratory centre.
	www.ilo.org /encyclopedia/?print&nd=857200160 (803 words)

	Gallium arsenide - ArticleWorld
		Gallium arsenide, with the chemical formula GaAs is a compound formed as a result of a chemical reaction between the elements gallium and arsenic.
		Gallium arsenide has a faster switching speed than silicon and was proposed to be used in computing devices.
		Gallium arsenide is widely used in the manufacture of equipment used in mobile, radar and satellite communication.
	www.articleworld.org /index.php/Gallium_arsenide (398 words)

	Gallium Arsenide - as a Photovoltaic Material
		Gallium arsenide (GaAs) is a compound semiconductor: a mixture of two elements, gallium (Ga) and arsenic (As).
		Gallium is a by-product of the smelting of other metals, notably aluminium and zinc, and it is rarer than gold.
		One of the greatest advantages of gallium arsenide and its alloys as PV cell materials is the wide range of design options possible.
	www.azom.com /details.asp?ArticleID=1166 (591 words)

	Light emission moves into the blue (February 1998) - Physics World - PhysicsWeb
		In the case of red-emitting devices, aluminium gallium arsenide has almost the same lattice constant as GaAs, while aluminium indium gallium phosphide can be lattice-matched to gallium arsenide by altering its composition.
		The band-gap energy of aluminium gallium indium nitride varies between 6.2 and 2.0 eV, depending on the composition at room temperature.
		N) sandwiched between p-type aluminium gallium nitride and n-type gallium nitride, all grown on a sapphire substrate.
	physicsweb.org /articles/world/11/2/12/1 (3339 words)

	Gallium
		Further in vitro studies demonstrated the attenuation of gallium inhibition of hepatic and renal ALAD by zinc, suggesting that the mechanism of gallium action may involve competition for or displacement of zinc from the sulfhydryl group of the enzyme active site.
		The plasma distribution of gallium (as an analogue of aluminium) was investigated in patients with Alzheimer disease, Down syndrome, or stroke dementia, in subjects on haemodialysis for chronic renal failure, and in healthy controls.
		Gallium scintigraphy in both children demonstrated increased radionuclide concentration throughout the lungs, a pattern indistinguishable scintigraphically from that of Pneumocystis carinii pneumonia (PCP).
	www.ithyroid.com /gallium.htm (6276 words)

	Toronto Catalog (Site not responding. Last check: 2007-10-08)
		The mechanism of degradation of the active region, where the radiative recombination occurs, involves nucleation and growth of dislocations; this requires a presence of an existing defect in the crystal and is accelerated by heat, high current density, and emitted light.
		Gallium arsenide and aluminum gallium arsenide are more susceptible to this mechanism than gallium arsenide phosphide and indium phosphide.
		Due to different properties of the active regions, gallium nitride and indium gallium nitride are virtually insensitive to this kind of defects; however, high current density can cause electromigration of atoms out of the active regions, leading to emergence of dislocations and point defects, acting as nonradiative recombination centers and producing heat instead of light.
	www.torontopost.biz /Info/?LED (6948 words)

	Radio-Electronics.Com :: High Electron Mobility Transistor (HEMT)
		Gallium arsenide is generally used because it provides a high level of basic electron mobility and this is crucial to the operation of the device.
		Its purpose is to ensure the separation of the hetero-junction interface from the doped aluminium gallium arsenide region.
		For the recess gate structure another layer of n-type gallium arsenide is set down to enable the drain and source contacts to be made.
	www.radio-electronics.com /info/data/semicond/hemt/hemt.php (881 words)

	Method of coupling radiation in an infrared detector, and an arrangement herefor - Patent 5229614
		The invention is characterized in that a two-dimensional crossed grating (6), a so-called 2-D grating, is constructed on the top of the detector mesa of the detector on the side opposite the surface through which incident light (5) enters the detector.
		The detector is built-up on a substrate 4 of semi-insulating gallium arsenide (GaAs).
		The reflection grating is comprised, for instance, of etched gallium arsenide with an overlying metal layer thereby providing a pattern of reflective cavities.
	www.freepatentsonline.com /5229614.html (2093 words)

	Gallium arsenide - Japan
		Gallium arsenide (GaAs) is; a compound of two elements, Gallium and Arsenic.
		The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns.
		Single crystals of gallium arsenide can be manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material due to its mechanical properties.
	gallium-arsenide.zdnet.co.za /zdnet/Gallium_arsenide (944 words)

	Online Encyclopedia and Dictionary - Light-emitting diode
		LED development began with infrared and red devices made with gallium arsenide.
		Commercially viable blue LEDs based on the wide bandgap semiconductor gallium nitride were invented by Shuji Nakamura while working in Japan at Nichia Corporation in 1993 and became widely available in the late 1990s.
		Most "white" LEDs in production today use a 450 nm – 470 nm blue GaN (gallium nitride) LED covered by a yellowish phosphor coating usually made of cerium doped yttrium aluminium garnet (YAG:Ce) crystals which have been powdered and bound in a type of viscous adhesive.
	fact-archive.com /encyclopedia/LED (2356 words)

	About LEDs - What is an LED - Light Emitting Diodes - for LED motorcycle lighting, led motorcycle light kits, ...
		Commercially viable blue LEDs based on the wide bandgap semiconductor gallium nitride and indium gallium nitride were invented by Shuji Nakamura while working in Japan at Nichia Corporation in 1993 and became widely available in the late 1990s.
		The LED chip emits blue light, part of which is efficiently converted to a broad spectrum centered at about 580 nm (yellow) by the Ce The single crystal form of Ce :YAG is actually considered a scintillator rather than a phosphor.
		Due to the spectral characteristics of the diode, the red and green colors of objects in its blue+yellow light are not as vivid as in broad-spectrum light.
	www.chromeglow.com /store.asp?pid=6935 (989 words)

	Gallium - Search Results - ninemsn Encarta
		Gallium, symbol Ga, metallic element that remains in the liquid state over a wider range of temperatures than any other element.
		The most compact of lasers, the semiconductor laser usually consists of a junction between layers of semiconductors with different electrical...
		The most widely used compound semiconductors are based on gallium arsenide.
	au.encarta.msn.com /Gallium.html (95 words)

	Amino acids meet electronics (May 2005) - News - PhysicsWeb
		These included five metals (gold, palladium, platinum, titanium and aluminium), two semiconductors (gallium arsenide and aluminium gallium arsenide) and two insulators (silicon nitride and silica).
		The silica, silicon nitride and aluminium surfaces were generally more adherent than the gallium arsenide and palladium surfaces.
		The surface, which was made with molecular beam epitaxy, was created from a layered structure of gallium arsenide and aluminium gallium arsenide (AlGaAs) that was then etched to expose "veins" of AlGaAs.
	physicsweb.org /articles/news/9/5/16/1 (373 words)

	Plasmatreat GmbH
		The binary compound gallium arsenide (GaAs, gallium + arsenic) is a semiconductor that can be semi conductive (endowed with elements of the groups II, IV, or VI of the periodic system) as well as semi isolating (non-endowed).
		Components made of gallium arsenide connect ten times faster than their comparable pendants made from silicon; in addition, they are less interference-prone with analog signals and consume less energy.
		Besides, gallium arsenide is used for transmitting information through glass fibre nets via lasers or surface-emitting lasers (VCSEL), as well as to supply satellites with energy from highly sophisticated solar cells (photovoltaics).
	www.plasmatreat.de /GB/html/glossary/g.html (686 words)

	Gallium(III) arsenide - Wikipedia, the free encyclopedia
		The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns.
		Single crystals of gallium arsenide can be manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material due to its mechanical properties.
		The toxicological properties of gallium arsenide have not been thoroughly investigated.
	en.wikipedia.org /wiki/Gallium_arsenide (652 words)

	Attaching amino acids to electronic device materials (May 2005) - News - nanotechweb.org
		The silica, silicon nitride and aluminium surfaces were, on the whole, more adherent than the gallium arsenide and palladium surfaces.
		They matched the structure with a peptide sequence containing a centre section of Asp – an amino acid that adheres to aluminium gallium arsenide – surrounded on either side by series of the hydrophobic amino acid Leu, which doesn’t adhere to aluminium gallium arsenide.
		As long as the sizes and spacing of the aluminium gallium arsenide veins matched with the length of the peptide sequences, the central aspartic acid sections of the peptides were able to adhere to the veins without interference from the leucine sections.
	nanotechweb.org /articles/news/4/5/10/1 (654 words)

	Gallium(III) arsenide Information
		Complex layered structures of gallium arsenide in combination with aluminium arsenide (AlAs) or the alloy Al
		The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2.000 suns.
		Single crystals of gallium arsenide are manufactured by the Bridgeman technique, as the Czochralski process is difficult for this material.
	www.bookrags.com /wiki/Gallium(III)_arsenide (632 words)

	Aluminium gallium arsenide - Japan
		Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices.
		The AlGaAs layer confines the electrons to a gallium arsenide region.
		The environment, health and safety aspects of aluminum gallium arsenide sources (such as trimethylgallium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review
	aluminium-gallium-arsenide.zdnet.co.za /zdnet/Aluminium_gallium_arsenide (422 words)

	U.S. Patent: 5148242 - Electron-wave coupled semiconductor switching device - September 15, 1992
		In operation the voltages applied to the first and second gate electrodes are selected to separately confine the electron waves and the voltage applied to the second gate electrode, which is disposed between the first and third gate electrodes is varied to induce coupling between the electron waves and thus produce switching.
		Grown on top of the gallium arsenide substrate 12 is a first semiconductor layer 14 which again consists of intrinsic gallium arsenide which is undoped but in practice tends to be slightly p-doped.
		On top of the gallium arsenide layer 16 there is then grown a gallium arsenide cap layer 20 which is of non-doped material and typically has a thickness of 100 to 300.ANG..
	www.everypatent.com /comp/pat5148242.html (8651 words)

	Periodic Table : Scholar edition: gallium : The Essentials
		Ultra-pure gallium has a beautiful, silvery appearance, and the solid metal exhibits a conchoidal fracture similar to glass.
		The metal expands on solidifying; therefore, it should not be stored in glass or metal containers, as they may break as the metal solidifies.
		Gallium arsenide is capable of converting electricity directly into coherent light and gallium arsenide is a key component of LEDs (light emitting diodes).
	www.webelements.com /webelements/scholar/elements/gallium/key.html (227 words)

	arsenide - Search Results - MSN Encarta
		The most compact of lasers, the semiconductor laser usually consists of a junction between layers of semiconductors with different electrical...
		The most widely used compound semiconductors are based on gallium arsenide.
		Arsenic is used in large quantities in the manufacture of glass to eliminate a green colour caused by impurities of iron compounds.
	uk.encarta.msn.com /arsenide.html (100 words)

	aluminium welding (Site not responding. Last check: 2007-10-08)
		Aluminium salts are widely used in water treatment as coagulants to...
		aluminium welding all an p aluminium ti coating for
		aluminium welding dvision technologies leads competition with highest number of cosmosworks certified application engineers
	www.thecareweb.com /aluminium-welding/2007/01/aluminium-welding-all-an-p-aluminium-ti-coating-for.php (152 words)

	Home Tips - Bright New Lights - ArcaMax Publishing
		If aluminium gallium indium phosphide is introduced, the light is higher and the color is red-orange, orange, green or yellow.
		Gallium arsenide phosphide produce red, orange or yellow LED lighting, wile gallium phosphide delivers a red, yellow or green light.
		Indium gallium nitride creates LED lighting that is almost ultraviolet, bluish green or blue, while using silicon carbide as a semiconductor delivers only blue light.
	www.arcamax.com /home/s-81608-139103 (566 words)

	Semiconductor - Facts, Information, and Encyclopedia Reference article
		A semiconductor behaves as an insulator at very low temperature, and has an appreciable electrical conductivity at room temperature although much lower conductivity than a conductor.
		Commonly used semiconducting materials are silicon, germanium, and gallium arsenide.
		A semiconductor can be distinguished from a conductor by the fact that, at absolute zero, the uppermost filled electron energy band is fully filled in a semiconductor, but only partially filled in a conductor.
	www.startsurfing.com /encyclopedia/s/e/m/Semiconductor.html (1959 words)

	CERN Courier - Avalanches avoided with quan - IOP Publishing - article
		Unlike current devices, such as the photomultiplier tube and the avalanche photodiode, it does not rely on avalanche amplication of the signal and is therefore less prone to noise.
		Inside a sandwich of gallium arsenide and aluminium gallium arsenide is a layer of quantum dots, each just a few nanometres in diameter (May p9).
		When a photon hits the device, an electron escapes from one of the quantum dots and is detected by a change in resistance in a conducting layer just a few nanometres above the dots.
	www.cerncourier.com /main/article/40/6/14 (139 words)

	Semiconductors
		Conversely, semiconductor absorption of light in photodetectors excites electrons from the valence band to the conduction band, facilitating reception of fiber optic communications, and providing the basis for energy from solar cells.
		Semiconductors may be elemental materials, such as silicon, compound semiconductors such as gallium arsenide, or alloys, such as silicon germanium or aluminium gallium arsenide.
		Materials in which the band extrema are aligned in k, for example gallium arsenide, are called direct bandgap semiconductors.
	www.webservicesfree.com /Articles/Materials-Manufacturing-Articles/Materials/Semiconductors.htm (2503 words)

	Amazon.co.uk: gallium: Books (Site not responding. Last check: 2007-10-08)
		Gallium Arsenide and Related Compounds: Proceedings of the Nineteenth International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan,...
		Gallium Arsenide and Related Compounds: Proceedings of the Twentieth International Symposium on Gallium Arsenide and Related Compounds, Freiburg, Germany,...
		Gallium Arsenide and Related Compounds: Proceedings of the International Symposium on Gallium Arsenide and Related Compounds (Institute of Physics Conference Series) by T. Ikoma and H. Watanabe (Hardcover - 1 Jan 1990)
	www.amazon.co.uk /s?ie=UTF8&keywords=gallium&index=books&pg=4&page=1 (646 words)

	Light-emitting diode - TvWiki, the free encyclopedia (Site not responding. Last check: 2007-10-08)
		The materials used for an LED have a direct bandgap with energies corresponding to near-infrared, visible or near-ultraviolet light.
		Image:Uv-LED.jpg Commercially viable blue LEDs based on the wide bandgap semiconductor gallium nitride and indium gallium nitride were invented by Shuji Nakamura while working in Japan at Nichia Corporation in 1993 and became widely available in the late 1990s.
		Most "white" LEDs in production today use a 450 nm – 470 nm blue GaN (gallium nitride) LED covered by a yellowish phosphor coating usually made of cerium-doped yttrium aluminium garnet (Ce :YAG) crystals which have been powdered and bound in a type of viscous adhesive.
	www.tvwiki.tv /wiki/LED (3242 words)

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