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| | Aluminium gallium indium phosphide - Wikipedia, the free encyclopedia |
 | | Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material. |
 | | AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. |
 | | Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. |
| en.wikipedia.org /wiki/Aluminium_gallium_indium_phosphide (139 words) |
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