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Topic: Ball bonding

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	Wire bonding - Wikipedia, the free encyclopedia
		Wire bonding is a method of making interconnections between a microchip and the outside world as part of semiconductor device fabrication.
		Ball bonding usually is restricted to gold and copper wire and usually requires heat.
		Wire bonding is generally considered the most cost-effective and flexible interconnect technology, and is used to assemble the vast majority of semiconductor packages.
	en.wikipedia.org /wiki/Wire_bonding (195 words)

	Apparatus and method of forming aluminum balls for ball bonding - Patent 4387283
		The aluminum balls are formed in a moist argon atmosphere by applying an electrical potential across a spark gap causing a spark to occur which causes the end of the aluminum wire to melt, forming an aluminum ball.
		It is another advantage of the present invention to produce aluminum balls on the ends of an aluminum wire for ball bonding which are less prestressed by straightening the ball to be concentric with the axis of the wire after formation of a skewed ball.
		Another advantage of the present invention is to provide aluminum balls at the end of an aluminum wire for ball bonding purposes which are concentric with the longitudinal axis of the aluminum wire for proper wire loop formation between the bonding pad of the integrated circuit and the bonding pad of the lead frame.
	www.freepatentsonline.com /4387283.html (4094 words)

	Wire Bonding (Site not responding. Last check: 2007-10-25)
		TC ball bonding is rarely used any more but will be explained herein since the principles of TC bonding are still valid and, the method still has much merit (and some use).
		Contamination may be in the form of oxides on the bonding interfaces or foreign chemical substances attached either on the metal surfaces or on the oxides already present on the metal surfaces.
		Ball bonding requires that the small wire be fed through a quartz, tungsten carbide, or titanium thick-walled capillary tube.
	www.techiedo.com /wire_bonding.htm (2788 words)

	Empfasis - Tech Tips... Wire Bonding: Ball Bonding vs Wedge Bonding
		The most common method of wedge bonding is wedge-wedge bonding, where both the source bond and the destination bond are formed with the geometry of a wedge.
		Ball bonds are considered omni-directional and allow wire placement at any angle with only x-y motions.
		Despite the wedge bond’s distinct advantages in pitch and the ability to process temperature-sensitive substrates and high power applications, the popularity of the ball bonding process continues to exceed that of wedge bonding.
	www.empf.org /empfasis/may05/bond505.htm (973 words)

	Supplying a cover gas for wire ball bonding - US Patent 6234376 (Site not responding. Last check: 2007-10-25)
		In a typical bonding process, the end of the lead wire is formed into a ball of molten metal by, for example, causing an arc discharge between the bonding wire and an electrode which is placed very close to the end of the wire protruding from the capillary tool.
		After formation of the ball, the electrode is withdrawn and the cylinder is raised to permit the end of the capillary tool to be lowered towards a die pad to complete the ball-bonding process.
		After a molten ball forms at the end of the wire, the EFO is de-energized and the ball allowed to at least partially solidify.
	www.patentstorm.us /patents/6234376.html (3102 words)

	A: Guidelines (Site not responding. Last check: 2007-10-25)
		The ball is pressed to the bonding pad on the die with sufficient force to cause plastic deformation and atomic interdiffusion of the wire and the underlying metallization, which ensure the intimate contact between the two metal surfaces and form the first bond (ball bond).
		Ball size is approximately 2 to 3 times the wire diameter, 1.5 times for small ball applications with fine pitches, and 3 to 4 times for large bond pad application.
		The reason is that the ball bonds have a large interfacial welded area in the order of 6-10 times cross-section area of the wire, and the pull test often causes the bonded wire to break at a weak point for instance at the transition above the ball.
	extra.ivf.se /ngl/A-WireBonding/ChapterA2.htm (8390 words)

	Ball bonding of wire - Patent 4459452
		A method and apparatus for forming a ball on a wire by spark discharge and for bonding the wire to a microcircuit is disclosed.
		In one known technique for gold-wire bonding, a ball was formed on the end of a gold wire and the gold ball was then connected to the silicon chip or substrate circuit by thermo-compression or ultrasonic bonding.
		The ball was formed by applying a hydrogen flame to the wire, or by creating a spark discharge between the wire and an electrode by applying a sufficient voltage (350 volts or over) between the gold wire and the electrode to cause a discharge to take place in the space between them.
	www.freepatentsonline.com /4459452.html (2496 words)

	Ball Bond Lifting (Site not responding. Last check: 2007-10-25)
		is the detachment of a ball bond from the bond pad of a semiconductor device.
		Ball lifting can also be due to contaminants on the bond pad, which act as barriers between the ball and the bond pad.
		Kirkendall voiding, which is the formation of voids underneath the ball bond due to excessive diffusion of Al from the bond pad to the Au ball bond to form purple plague, is an example of this mechanism.
	www.semiconfareast.com /ballifting.htm (336 words)

	A quick primer on bonding wire parameters
		Bonding wire is usually specified because of its strength, based on the metallurgical characteristics of "elongation" and "breaking load." Both gold and aluminum are strong.
		Gold wires for ball bonding are normally supplied in the annealed condition to prevent unwanted "breakoff' partial annealing during ball formation.
		Palladium‑doped gold wire is used for ball bonds on IC chips for flip chip applications and ball‑in‑the corner interconnects.
	www.calfinewire.com /articles/bonding.htm (1813 words)

	Ball bonding - Wikipedia, the free encyclopedia
		A person upon first seeing a ball bonder will usually compare its operation to that of a sewing machine.
		The ball quickly solidifies, and the capillary is lowered to the surface of the microchip, which is typically heated to at least 125°C. The machine then pushes down on the capillary and applies ultrasonic energy with an attached transducer.
		Process where wire is cut right after ball is formed is called stud bumping.
	www.wikipedia.org /wiki/Ball_bonding (607 words)

	Encyclopedia: Ball bonding
		In physics, surface tension is an effect within the surface layer of a liquid that causes the layer to behave as an elastic sheet.
		Ball bonding is a type of (additional info and facts about wire bonding) wire bonding, and is the most common way to make the electrical interconnections between a microchip and the outside world as part of (additional info and facts about semiconductor device fabrication) semiconductor device fabrication.
		The ball quickly solidifies, and the capillary is lowered to the surface of the microchip, which is typically heated to at least 125°C. The machine then pushes down on the capillary and applies ultrasonic energy with an attached (An electrical device that converts one form of energy into another) transducer.
	www.nationmaster.com /encyclopedia/Ball-bonding (1077 words)

	IMAPS - International Microelectronics And Packaging Society
		In IC ball bonding the wire normally descends from the ball bond to the second bond on a lower elevation surface.
		The quality of the crescent bond (the second bond in the thermosonic ball bond process) is challenged by low temperature bonding because the mechanism for bond formation is diffusion and these conditions do not enhance diffusion.
		Bonding parameters (ultrasonic power and bond force) required to bond a thin ribbon are significantly lower than for the equivalent diameter round wire.
	www.imaps.org /adv_micro/2002jan_feb/4.html (1636 words)

	[No title]
		At the bonding pad, the microsensor signal is a measure for the stress caused by periodic oscillation of the capillary and gold ball.
		Bonding force and ultrasonic amplitude for curves (a) and (b) were 400 mN and 1.32 µm, and for curve (c) 1500 mN and 0.89 µm, respectively.
		In this stage, the microsensor signal obtained during an aluminum bond is comparable to the signal obtained during a bond on passivated surface as shown in Figs.
	www.iqe.ethz.ch /~micmac/published/PAPER.DOC (3800 words)

	Chip Scale Review Magazine (Site not responding. Last check: 2007-10-25)
		Modern ball bonders are capable of producing 16 wires/second (32 welds) while maintaining a position accuracy of ±2.5 µm.
		During the bonding cycle, the wire is held and deformed horizontally under the tool, in alignment with the wedge feed hole.
		At the conclusion of the second bond, an articulating clamp, normally located behind the wedge, closes and moves away from the wedge, breaking the wire at the second bond heel.
	www.chipscalereview.com /archives/0304/article.php?type=feature&article=f2 (440 words)

	Journal of Electronic Materials: Thermosonic Bonding of Gold Wire onto a Copper Pad with Titanium Thin-Film Deposition
		A novel thermosonic (TS) bonding process for gold wire bonded onto chips with copper interconnects was successfully developed by depositing a thin, titanium passivation layer on a copper pad.
		Reliability of the high-temperature storage (HTS) test for a gold ball bonded on the copper pad with a 3.7-nm titanium passivation layer was verified.
		Gold balls are bonded to the cap layer, so the electrical performance of chips with copper interconnects could be deteriorated by the cap layer because of the higher resistance of the cap layer.
	www.findarticles.com /p/articles/mi_qa3776/is_200404/ai_n9366735 (1180 words)

	Chip Scale Review Magazine (Site not responding. Last check: 2007-10-25)
		The wire bond pull test and shear test are widely used to evaluate and control the quality of ball bonds-fine pitch and otherwise.
		In ball bonding, long-term reliability studies have shown that at a strength level of 84 MPa (5.5 g/mil2), ball bonds maintain high strength through 1000 hours of thermal storage at 175°C. Lower-strength bonds degrade and are unacceptable.
		It is still possible, however, to over-bond and reduce the cross section of the bond heel, as shown on the graph, by the drop in the pull strength with high deformation.
	www.chipscalereview.com /archives/0503/article.php?type=dept&article=p_insights (576 words)

	Semiconductor Packaging: Wire Bonding or Wirebonding Process
		Free air ball size consistency, controlled by the EFO and the tail length, is critical in good bonding.
		are then applied to the ball for a specific amount of time, forming the initial metallurgical weld between the ball and the bond pad as well as deforming the ball bond itself into its final shape (Fig.
		The second bond is again formed by applying ultrasonic energy to the wire.
	www.semiconfareast.com /wirebond.htm (412 words)

	Designfax - New Pitch for Microelectronics
		As the ball diameter to bond pad area ratio increases, there is a need for tighter variation control for high ball placement accuracy.
		Standard capillaries deform a significant portion of the ball volume under the face of the capillary to achieve the high strength required for a ball bonding process.
		As ball pad placement is very tight in UFP applications, even the smallest uncontrolled variation outside the pad can result in yield loss of the bonded device.
	www.manufacturingcenter.com /dfx/archives/0703/0703feature.asp (1268 words)

	[No title]
		The bonding window was determined by independently varying force (4 levels), power (4 levels) and time (2 levels).
		The stability of the bonds was investigated by high temperature storage (125ºC) with periodic electrical resistance and pull strength testing.
		The stability of the bonds was investigated by high temperature storage with periodic electrical resistance and pull strength testing.
	www.eng.auburn.edu /ee/leap/data/data.htm (1737 words)

	U.S. Pregrant 20050003584 - System and method for increasing the strength of a bond made by a small diameter wire in ... (Site not responding. Last check: 2007-10-25)
		A system and method is disclosed for increasing the strength of a bond made by a small diameter wire in ball bonding.
		In one embodiment of the invention a structure for receiving a ball bond comprises substrate material that has portions that form a substrate cavity and a wire bond pad that covers and fills the substrate cavity.
		The ball is wirebonded to the sides and bottom of the wire bond cavity.
	cxp.paterra.com /uspregrant20050003584.html (288 words)

	Ball Bonding Wire offers long-term stability., Kulicke Soffa Industries, Inc.
		One of the industry’s highest reliable wires, the AW-66 4-N Ball Bonding Wire provides bonding process robustness in all ball bond applications, ranging from standard to ultra fine pitch.
		superior ball bond stability during thermal aging after 1000 hours at 175ºC. The AW-66 4-N Ball Bonding Wire is another example of how K&S is leading the way with innovative solutions that combine the best wire bonders, tools and materials with the expertise of the industry’s most comprehensive R&D and customer support organizations.
		K&S is the only assembly equipment supplier that also develops and manufactures the products that touch a semiconductor chip’s wire bonding pad surfaces, starting with electrical testing and ending with specially formed wire interconnections that remain as a part of the chip’s package.
	www.industrialnewsroom.com /fullstory/26354 (565 words)

	F&K Delvotec > Wire Bonders
		F&K Delvotec is the only manufacturer supplying machines covering the complete spectrum of wire bonding technologies: gold ball bonding, gold ball bumping, wedge bonding for fine gold, aluminium wire and ribbon, wedge bonding for power devices with heavy aluminium wire.
		The fastest large wire bonder in the market with the most advanced bond head in the world, offering bond process control.
		Hybrid gold ball bonder with large working area with extreme flexibilty, featuring auto focus and vertical z-motion, accomodates large height differences between bond surfaces including.
	www.fkdelvotecusa.com /?action=category&id=4& (384 words)

	TWL: Bronze ball valve bonding problem (Site not responding. Last check: 2007-10-25)
		I also considered removing the ball valve and through hull, but I just had this particular one installed two years ago at Phillbrooks, I'd like to get a few more years out of it.
		Why did they not notice that the bonding wire was poor...I don't know.
		It will be tightened around the valve using a nut and bolt, using tabs and the bonding wire will attach to the end of the bolt.
	lists.samurai.com /pipermail/trawlers-and-trawlering/2003-February/056635.html (251 words)

	[No title] (Site not responding. Last check: 2007-10-25)
		a plurality of bonding wires which penetrate through the through hole and electrically connect the chip to the wire-bonding portions;
		a second encapsulation body formed on the second surface of the core layer for encapsulating the bonding wires and the intended-exposing regions, wherein a thickness of the second encapsulation body covering the intended-exposing regions is substantially equal to that of the solder mask layer; and
		a plurality of solder balls deposited on the ball-bonding portions.
	www.uspto.gov /web/patents/patog/week12/OG/html/1292-4/US06870274-20050322.html (272 words)

	Wire Bonding, Die Bonding, Chip on Board, Wire Bonding at CIL
		CIL provides both Aluminium and Gold wirebonding using both wedge bonding and ball bonding.
		This is backed up with wirebond and die bond pull test and shear results using the latest SPC techniques.
		Using a combination of CAD design coupled with its highly automated SMT equipment and "state of the art "chip and wire bonding facility CIL is able to offer advanced solutions to customers packaging problems.
	www.cil-uk.co.uk /amt/amt.htm (728 words)

	IngentaConnect Cratering on Thermosonic Copper Wire Ball Bonding (Site not responding. Last check: 2007-10-25)
		Copper wire is harder than gold, and thus needs greater ultrasonic power and bond force to bond it onto metal pads such as aluminum.
		This paper reports a study on the influence of wire materials, bond pad hardness, and bonding-machine parameters (i.e., ultrasonic power and bond force) on silicon cratering phenomenon.
		Ultrasonic power and z-axis bond force were identified as the most critical bonding machine parameters in silicon cratering defects.
	www.ingentaconnect.com /content/asm/jmep/2002/00000011/00000003/art00008 (230 words)

	Ultrasonic Transducers (Site not responding. Last check: 2007-10-25)
		Complete design and fabrication of transducers with frequencies from 50 KHz to 140KHz for use in die and wire bonding machines
		Fine wire transducers for ball bonding and wedge bonding
		Sonica ultrasonic transducers for flip chip, fine wire, and large wire applications.
	www.foothillmachining.com /id5.html (57 words)

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