| | Microelectronic ballistic transistor - Patent 5289077 (via CobWeb/3.1 planetlab2.cs.unc.edu) (Site not responding. Last check: 2007-10-12) |
 | | The vacuum microelectronic transistor is advantageous in that it operates at a high speed and allows a comparatively high electric current to flow from the emitter to the collector and it occupies a comparatively small area on the substrate because electrons emitted from the emitter flow straight over a comparatively small distance to the collector. |
 | | In the transistor of the present embodiment, a pair of projected portions or ribs 22a and 23a each having, for example, a prism-like shape are formed on opposing faces of the emitter 22 and collector 23, respectively. |
 | | In the transistor of the present embodiment, a pair of grooves 45 and 46 are formed adjacent the steps by two operations of oblique anisotropic etching, and the emitter electrode 42, collector, electrode 44 and base electrodes 43 are separated by very small distances from one another by the grooves 45 and 46. |
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