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	BiCMOS - Wikipedia, the free encyclopedia
		As a simple example of a BiCMOS circuit, consider a two-stage amplifier which uses a MOS transistor in the first stage and a BJT in the second.
		It should be clear that this provides the high input resistance of the MOS and the low output resistance of a BJT amplifier.
		BiCMOS as a fabrication process is not nearly as mature as either BJT or CMOS fabrication.
	en.wikipedia.org /wiki/BiCMOS (409 words)

	BICMOS driver circuit with complementary outputs - United States Patent 4,871,928
		A BICMOS inverter circuit having a high input impedance, improved switching characteristics, low power requirements, high noise immunity, high drive capability, an increased output voltage swing, reduced body effect, high current drivability and improved power dissipation comprises a CMOS inverter for receiving an input signal and bipolar push-pull output transistors for supplying an output.
		For BICMOS arrays having a large number of devices, it is desirable that each CMOS device be of small size.
		A further object of the present invention is to provide a BICMOS inverter circuit which provides both an output signal and the compliment of that output signal.
	xrint.com /patents/us/4871928 (2681 words)

	IBM semiconductor solutions \| Foundry \| Technologies \| SiGe BiCMOS
		BiCMOS 7HP A SiGe technology with very high performance devices optimized for high performance applications such as high frequency wireless and optical.
		BiCMOS 5HP A SiGe technology which integrates a high-performance SiGe HBT with a 3.3 V CMOS base.
		BiCMOS 5PA A SiGe technology which integrates a high-performance SiGe HBT with a 3.3 V CMOS base optimized for applications requiring high voltage capability and high linearity such as power amplifier designs.
	www-03.ibm.com /chips/asics/foundry/technologies/bicmos.html (289 words)

	SiGe BiCMOS integrated circuits for high-speed serial communication links
		Compared to III–V integrated circuit technologies such as that based on the use of InP [5], the SiGe BiCMOS IC technology is viewed as a good candidate for implementing the relatively complex digital functions involved in clock and data recovery, serialization, and deserialization at data rates to 40 Gb/s and beyond.
		BiCMOS 5HP is the most mature IBM SiGe generation and has been used extensively in our 10–13-Gb/s serializer/deserializer (SerDes) work, as described in Section 3.
		BiCMOS 7HP presents a new generation of HBT to meet the challenges of high-speed wired communications at 40 Gb/s (SONET OC-768) and beyond.
	www.research.ibm.com /journal/rd/472/friedman.html (11565 words)

	SiGe BiCMOS from Atmel
		Atmel in Colorado Springs has integrated this bipolar technology with existing 0.35-micron BiCMOS capability allowing system-level IC design with mixed RF, analog, and digital.
		Atmel's AT46000 SiGe BiCMOS process is suitable for IC design applications in telecommunications and high-speed data up to 12 GHz.
		The AT46700 process is the second of several SiGe BiCMOS processes offered in Atmel's roadmap and is ideally suited for wireless data communications applications.
	www.atmel.com /products/SiGeBiCMOS (331 words)

	Why BiCMOS and SOI BiCMOS?
		As indicated in Figure 2, BiCMOS for digital logic applications was actively developed between the late 1970s and the early 1990s.
		The idea behind the development of BiCMOS for digital logic applications was to combine the characteristics of high-speed bipolar and low-power CMOS on the same chip.
		Nonetheless, lateral pnp transistors are often used in bipolar analog circuits to improve circuit characteristics [11].
	www.research.ibm.com /journal/rd/462/ning.html (2562 words)

	BiCMOS logic shrinks into DQFN packages: News from Philips Semiconductors
		DQFN packaging, Philips is able to offer the same performance characteristics of today's larger BiCMOS logic devices in a package that is 35% smaller, as well as a solid roadmap to continue cost reductions.
		Ideal for space-constrained, performance-hungry applications such as networking and telecommunications equipment, set-top box solutions and many other computing appliances, Philips' BiCMOS logic devices in DQFN packaging will enable designers to further shrink circuit boards or free board space for additional components and functionality.
		These devices come in a 2.4 x 3mm footprint for a 14-pin configuration and are also available in 16-, 20- and 24-pin options.
	www.electronicstalk.com /news/phi/phi290.html (416 words)

	Mixed Signal Design - RF CMOS or SiGe BiCMOS?
		From its humble beginning in the late 1980s when it was looked at as nothing more than a scientific excercise at a few research labs, namely at IBM in the United States and Temic in Europe, to today where it is on the road map of every major semiconductor company.
		Thus, for the first 0.35 µm SiGe BiCMOS process developed at Atmel, the Ft of the HBT device exceeded 45 GHz as compared to the Ft of the 0.35 µm NMOS, which was barely more than 20 GHz.
		The BiCMOS process is more complex and, therefore, offers a few layers more that could be tapped as the diodes for the ESD protection.
	rfdesign.com /mag/radio_choosing_rf_cmos/index.html (3381 words)

	Philips debuts world's smallest BiCMOS logic device in DQFN packaging technology
		With DQFN packaging, Philips is able to offer the same performance characteristics of today's larger BiCMOS logic devices in a package that is 35 percent smaller, as well as a solid roadmap to continue cost reductions.
		These devices come in a 2.4mm x 3mm footprint for a 14-pin configuration and are also available in 16-, 20- and 24-pin options.
		With activities in the three interlocking domains of healthcare, lifestyle and technology and 165,600 employees in more than 60 countries, it has market leadership positions in medical diagnostic imaging and patient monitoring, color television sets, electric shavers, lighting and silicon system solutions.
	www.semiconductors.philips.com /news/content/file_1113.html (416 words)

	Silicon/Silicon Germanium BiCMOS Processes and Circuit Techniques for RFICs
		Not all BiCMOS processes are capable of working well for RFICs, but must often be customized to the particular requirements of high frequency analog circuit applications.
		Often these RFIC BiCMOS processes are coupled with analog design techniques that are often unfamiliar to the RF circuit designer.
		Received BS degrees in Physics and EE in 1982 from University of California at Fresno, MS and PhD degrees in EE from Massachusetts Institute of Technology in 1985 and 1988, respectively.
	www.mtt.org /symposia/ims/2000/wsa.htm (1267 words)

	In integrated circuit integrated circuit design BiCMOS refers to the integration...
		In integrated circuit integrated circuit design, "BiCMOS" refers to the integration of bipolar junction transistor bipolar junction transistors and CMOS CMOS technology into a single device.
		This technology is currently under active research, and appears to have potential in the near future for commercial application in amplifier amplifier and discrete component logic design.
		This translates to high bandwidth bandwidth (for amplifiers) and high switching speed (for logic circuits).
	www.biodatabase.de /BiCMOS (462 words)

	Amazon.com: BiCMOS Technology and Applications (The International Series in Engineering and Computer Science): Books: ... (Site not responding. Last check: 2007-10-23)
		BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS.
		In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application.
		BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS.
	www.amazon.com /exec/obidos/tg/detail/-/0792393848?v=glance (583 words)

	CMOS/BiCMOS ULSI: Low Voltage, Low Power - $97.75 (Site not responding. Last check: 2007-10-23)
		BiCMOS combines the low-power dissipation and high packing density of CMOS with the high speed and high output drive of bipolar devices.
		Upon introducing the basics of BiCMOS devices, chapter 2 moves on to describe the different key BiCMOS process technologies as well as discuss the design considerations for achieving high-performance BiCMOS devices.
		The merged BiCMOS, the multidrain/multicollector complementary BiCMOS, the quasi-complementary BiCMOS, the feedback BiCMOS, the Schottky BiCMOS/BiNMOS, the high-b BiCMOS, the transiently saturated BiCMOS, and the bootstrapping CMOS/BiCMOS circuits are also covered in depth.
	www.informit.com /title/0130321621 (1261 words)

	PolarFab recasts itself as pure-play BiCMOS foundry
		The BiCMOS process, which implants bipolar transistors on a CMOS substrate, is especially useful for what Peterson calls "Big A, Small D" mixed-signal circuits, with ample analog content and some digital content.
		While disk-drive read channels are increasingly fabricated in what Peterson calls "tweaked CMOS," the BiCMOS process remains a favorite for communications interfaces and other chips requiring analog precision on their front ends.
		In addition to a 0.5-micron BiCMOS process, PolarFab maintains a complementary bipola r capability that is useful for high-speed communications circuits.
	www.us.design-reuse.com /news/news1648.html (829 words)

	Title page for ETD etd-03122003-153048
		Major efforts are underway to reduce the number of integrated circuits (ICs) in newer designs by incorporating several functions into a single chip.
		Availability of newer technologies such as silicon bipolar with complementary metal oxide semiconductor (BiCMOS) has helped facilitate this move toward more complex circuit topologies onto one die.
		BiCMOS achieves efficient chip area utilization by combining bipolar transistors, suited for higher frequency analog circuits with CMOS transistors that are useful for digital functions and lower frequency analog circuits.
	scholar.lib.vt.edu /theses/available/etd-03122003-153048 (429 words)

	Technologies
		AMS 0.35um, 0.6um and 0.8um CMOS processes, and 0.8um SiGe BiCMOS process, via Europractice.
		BiCMOS process from Philips for mixed analog and/or digital designs (0.5um CMOS, 30 GHz bipolar).
		BiCMOS process from Philips for mixed analog and/or digital designs (0.25um CMOS, 40 GHz bipolar).
	warga.et.tudelft.nl /cadmgr/technologies.html (700 words)

	CHARTERED EXPANDS SEMICONDUCTOR MANUFACTURING OFFERING WITH SiGe BiCMOS TECHNOLOGY (Site not responding. Last check: 2007-10-23)
		According to a new study from Semico Research, as leading foundries expand the availability of cost effective processes, the demand for SiGe integrated circuits is expected to accelerate rapidly in the coming years, becoming a $2.7 billion niche market by 20061.
		The optimized bipolar 0.18-micron SiGe BiCMOS process allows designers to integrate RF front-end and baseband chips for wireless communications or to provide high-speed data rates for wireline applications.
		Chartered technologists will discuss the details of the company's SiGe strategy during its 2002 Tech Forum series, which begins on September 4, 2002 in Taiwan and runs through the end of September visiting locations in Japan, Europe and the U.S. More information about the Chartered Tech Forums is available at www.charteredsemi.com/forum.htm.
	www.charteredsemi.com /media/corp/2002n/20020903.asp (1142 words)

	Course #16, CMOS/BiCMOS Process Integration and Engineering
		BiCMOS adds the further advantages of noise immunity, linearity, device matching, and high drive capacity, thus permitting performance optimization and a higher degree of system integration.
		CMOS and bipolar device performance tradeoffs inherent in creating a BiCMOS process from purely CMOS or bipolar flows are addressed.
		Emphasis is given to critical bipolar process modules such as buried layers, collector structures, vertical and horizontal isolation schemes, base formation, and polysilicon emitter design.
	www.cei.se /016.htm (744 words)

	ELE 535 BiCMOS Design (Site not responding. Last check: 2007-10-23)
		This is a course in the design of biCMOS analog integrated circuits.
		Students design a BiCMOS circuit for fabrication by ON Semiconductor.
		Analyze the effects of temperature and process variations on biCMOS circuit performance.
	www.ele.uri.edu /Courses/ele535 (89 words)

	Bicmos technology (Site not responding. Last check: 2007-10-23)
		hi, iam designing a bicmos gilbert cell as a pull up circuit.
		i ve been goin through the differences betn cmos and bipolar and the advantages bicmos can give.
		but i want to know the future prospects of bicmos technology.
	www.talkaboutcad.com /group/comp.lsi/messages/10227.html (87 words)

	Melexis - CMOS and BiCMOS Integrated Circuits, Programmable Sensor IC Systems
		For over a decade, Melexis has been designing and manufacturing advanced CMOS and BiCMOS integrated circuits, sensor ICs, and programmable sensor IC systems with unique customization and configuration capabilities.
		The family of low-cost, high performance 300 to 950 MHz RF transmitters, receivers and transceivers simplify and speed design by perfectly matching each RF system’s frequency range, modulation scheme (ASK, FSK and FM), blocking and channel requirements.
		Melexis’ receivers have a high large-signal handling capability, a high degree of image rejection and a low spurious signal emission.
	www.rfglobalnet.com /ecommcenters/melexis.html (537 words)

	Tool Folder : UCC3817EVM - UCC3817EVM BiCMOS Power Factor Preregulator EVM
		The high output voltage of the boost converter generally needs to be stepped down with a forward power converter.
		The UCC3817 BiCMOS Power Factor Preregulator control IC uses leading edge modulation that, when properly synchronized with the down stream converter's control IC, can significantly reduce the RMS current through the preregulator's boost capacitor.
		The UCC3817EVM can also be used to evaluate the UCC3818 BiCMOS Power Factor Preregulator.
	focus.ti.com /docs/toolsw/folders/print/ucc3817evm.html (172 words)

	Announcements
		The process is optimized to address RF needs with high quality and high performance for wireless RF applications.
		MEMS are manufactured on compatible front-side bulk micromachining (CMOS, BiCMOS, GaAs) and surface micromachining.
		The process is of high quality, suitable for System on Chip applications, since it is able to handle large high density/high performance digital applications as well as high performance analog and RF applications in the same chip.
	cmp.imag.fr /Announcmt.html (5106 words)

	CMOS/BiCMOS Analogue IC Design
		Participants should have a general knowledge of analogue circuits, electrical circuit analysis and familiarity with integrated circuit technology.
		To expose the participants to the methods used in the processing and design of such circuits, including electrical modelling, characterisation of the process parameters, SPICE simulation techniques, testability considerations and methods of experimental verification.
		The course is a bottom-up, hierarchical approach to the subject of analogue circuit and systems design using standard CMOS and BiCMOS technologies.
	www.its-ireland.ie /cmos.htm (503 words)

	Bicmos - Books - Compare Prices, Reviews and Buy at NexTag - Price - Review
		Compact Low-Voltage and High-Speed Cmos, Bicmos and Bipolar Operational Amplifiers
		BICMOS Integrated Circuit Design with Analog, Digital and Smart Power Applications
		High Performance Bicmos Technology and Its Applications to Vlsis
	www.nextag.com /bicmos/search-html (129 words)

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