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	Transistors - Encyclopedia.WorldSearch (Site not responding. Last check: 2007-10-08)
		Transistor was also the common name in the sixties for a transistor radio, a pocket-sized portable radio that used transistors (rather than vacuum tubes) as its active electronic components.
		Bipolar transistors are so named because the main conduction channel uses both electrons and holes to carry the main electric current.
		In bipolar transistors, the semiconductor is formed into structures called p-n junctions that allow electricity to flow in only one direction through them – that is, they are a conductor when voltage is applied in one direction, and an insulator when it is applied in the other direction.
	encyclopedia.worldsearch.com /transistors.htm (4924 words)

	Bipolar junction transistor - Wikipedia, the free encyclopedia
		A bipolar junction transistor (BJT) is a type of transistor, an amplifying or switching device constructed of doped semiconductors.
		To make the transistor conduct appreciable current (on the order of 1 mA) from C to E, must be equal to or slightly greater than the cut-in voltage.
		The germanium transistor was more common in the 1950s and 1960s, and while it exhibits a lower "cut off" voltage, making it more suitable for some applications, it also has a greater tendency to exhibit thermal runaway.
	en.wikipedia.org /wiki/BJT (1082 words)

	Bipolar Junction Transistors
		Bipolar power devices are the traditional power devices because of their capability to provide high currents and high blocking voltages.
		High power bipolar transistors are conceptually the same as the bipolar transistors described in chapter 8.
		Furthermore, since both transistors are in saturation in the on state, a significant amount of minority carriers are accumulated in the base region of each transistor.
	ece-www.colorado.edu /~bart/book/book/chapter5/ch5_9.htm (1430 words)

	Bipolar junction transistor - Wikipedia, the free encyclopedia
		Bipolar transistors are so named because the main conduction channel employs both electrons and holes to carry the main electric current.
		In an npn-type transistor for example, electrons from the emitter wander (or "diffuse") into the base.
		The Heterojunction Bipolar Transistor (HBT) is an improvement of the BJT that can handle signals of very high frequencies up to several hundred GHz.
	www.wikipedia.org /wiki/Bipolar_transistor (1082 words)

	chet_paynter_introduct_6\|Bipolar Junction Transistors\|Chapter Summary
		The bipolar junction transistor (BJT) is a three-terminal device.
		The various voltages present in a typical transistor circuit are described in Table 6.1 and measured as shown in Figure 6.3.
		When a transistor is zero biased, meaning that there are no external biasing potentials applied to the two junctions, depletion layers are present, and the transistor is effectively in cutoff.
	wps.prenhall.com /chet_paynter_introduct_6/0,5779,425985-,00.html (1252 words)

	Bipolar transistors (from semiconductor device) -- Encyclopædia Britannica
		Transistors are the active components of integrated circuits, or “microchips,” which often contain millions of these minuscule devices etched into their shiny surfaces.
		In 1947, however, with the invention of the transistor, the extraordinary usefulness of semiconductors was recognized.
		Summary of transistor history from the development of the first transistor in 1947, to the awarding of the Nobel Prize in physics in 1956 to the Bell Laboratory team that created the first device, to the modern applications of transistor technology.
	www.britannica.com /eb/article-34330?tocId=34330 (884 words)

	Transistor ratings and packages - Chapter 4: BIPOLAR JUNCTION TRANSISTORS - Volume III - Semiconductors (Site not responding. Last check: 2007-10-08)
		Since transistors are a bit more complex than some of the other components you're used to seeing at this point, they tend to have more kinds of ratings.
		Reverse voltages: As with diodes, bipolar transistors are rated for maximum allowable reverse-bias voltage across their PN junctions.
		One popular small-signal transistor, the 2N3903, is advertised as having a β ranging from 15 to 150 depending on the amount of collector current.
	www.allaboutcircuits.com /vol_3/chpt_4/13.html (735 words)

	Advances in Bipolar Transistors - 8/1/2004 - ECN (Site not responding. Last check: 2007-10-08)
		Bipolar transistors have an inherent advantage because they benefit from conductivity modulation of the resistive collector region when operated as a saturated switch, which significantly reduces the effective on-resistance, RCE(sat).
		Bipolar transistors, however, are extremely rugged to ESD damage, and they have no difficulty passing Human Body Model discharge tests.
		Bipolar transistors continue to be developed to optimize performance in these applications, and they will deliver real advantages in circuit function, performance and cost for many years to come.
	www.ecnmag.com /article/CA442831.html (1102 words)

	Bipolar Junction Transistors (BJT)
		The general operation of a transistor is as a variable resistor with the base terminal of the transistor functioning as the controlling input.
		For the PNP transistor, the voltage potential of the emitter must be more positive than the voltage potential of the base to forward bias the base-emitter junction.
		Once the saturation current is reached, the transistor operates in the saturation region and the current in the collector remains constant.
	www.hcc.hawaii.edu /~sdunan/cent112/notes/06FTransistors (1991 words)

	Bipolar Junction Transistors
		The discussion of the ideal transistor starts with a discussion of the forward active mode of operation, followed by a general description of the four different bias modes, the corresponding Ebers-Moll model and a calculation of the collector-emitter voltage when the device is biased in saturation.
		The minority-carrier distribution in the quasi-neutral regions of the bipolar transistor, as shown in Figure 5.3.1, is used to analyze this situation in more detail.
		In the low resistance “on” state of a bipolar transistor, one finds that the voltage between the collector and emitter is less than the forward bias voltage of the base-emitter junction.
	ece-www.colorado.edu /~bart/book/book/chapter5/ch5_3.htm (1583 words)

	Biasing techniques - Chapter 4: BIPOLAR JUNCTION TRANSISTORS - Volume III - Semiconductors (Site not responding. Last check: 2007-10-08)
		Since the output transistor of a class D amplifier is never in the active mode, only cutoff or saturated, there will be little heat energy dissipated by it.
		In order to maintain linear (no-distortion) operation, transistor amplifiers shouldn't be operated at points where the transistor will saturate; that is, in any case where the load line will not potentially fall on the horizontal portion of a collector current curve.
		Complementary pairs of transistors running in class B operation are often used to deliver high power amplification in audio signal systems, each transistor of the pair handling a separate half of the waveform cycle.
	www.allaboutcircuits.com /vol_3/chpt_4/8.html (3233 words)

	Bipolar Junction Transistors (BJTs) (Site not responding. Last check: 2007-10-08)
		If a transistor is only partially turned on, it means that there will be a voltage drop between the collector and the emitter of the transistor and the transistor may become hot.
		If a transistor is connected as shown in the previous diagram, there will be a voltage drop across it because the transistor cannot be turned 'on' enough to have absolutely no voltage across it while current is flowing through it.
		If the transistor's beta is 150 and the transistor has 2 amps of current flowing through the collector and emitter, the current flowing through the base will be 2/150 or.013 amps of current.
	www.bcae1.com /trnsistr.htm (1271 words)

	Bipolar Junction Transistors
		A Bipolar Transistor essentially consists of a pair of PN Junction Diodes that are joined back-to-back.
		The development of a planar process yielded the first circuits on a chip and for a decade, bipolar transistor operational amplifiers and digital TTL circuits were the workhorses of any circuit designer.
		The structure of an NPN bipolar transistor is shown in Figure 1 (a).
	www.mtmi.vu.lt /pfk/funkc_dariniai/transistor/bipolar_transistor.htm (3554 words)

	Simultaneous fabrication of CMOS transistors and bipolar devices - Patent 4050965
		The bipolar transistors also were not lateral and did not take advantage of the poly-silicon mask as in the present invention.
		Described hereinafter is the process for the simultaneous fabrication of CMOS transistors and bipolar devices on the same integrated circuit.
		It is emphasized that the fabrication sequence for a lateral bipolar transistor is shown in FIGS.
	www.freepatentsonline.com /4050965.html (1057 words)

	transistors
		Transistors, I was once told, "were the fastest acting fuse known to mankind".
		In fact the amplitude (magnitude) of the collector current in a transistor is determined mainly by the emitter current which in turn is determined by current flowing into the base of the transistor.
		Bipolar transistors are essentially "current" amplifiers while FETS could be considered voltage amplifiers.
	www.electronics-tutorials.com /basics/transistors.htm (2001 words)

	ARTICLE BY BRUCE CARSTEN
		As long as the collector voltage is sufficiently high the transistor operates in the "unsaturated" region of the characteristic curves of Figure 7, where the collector/base current ratio is approximately constant.
		Transistor current gains are intentionally limited, particularly at low current, and base-emitter shunting resistances are built in, at least on the gated transistor (Rs in Fig.
		It was found that the bipolar transistor has the best combination of characteristics, including direct control of minority carrier injection, ability to accelerate turn off with reverse base current, and normally off behavior.
	www.power-tech.com /cartext.htm (4283 words)

	Transistors
		A bipolar junction transistor consists of three regions of doped semiconductors.
		Part of the manufacturer's data for transistors is a set of maximum values which must not be exceeded in its operation.
		These form some of the constraints on transistor operation which are a part of the design of any circuit.
	hyperphysics.phy-astr.gsu.edu /hbase/solids/trans.html (158 words)

	transistor -- Encyclopædia Britannica
		Bipolar transistors simultaneously use holes and electrons to conduct, hence their name (from “two polarities”).
		In bipolar transistors, however, these regions are referred to as the emitter, the base, and the collector.
		In 2001 a transistor commonly had dimensions of 0.25 micron (or micrometre; 1 micron = 106 metre), and 0.1 micron was projected for 2006.
	www.britannica.com /eb/article?tocId=9073201 (793 words)

	RF Matching Capacitors for RF power bipolar transistors and RF power LDMOS impedance matchingRF Matching Capacitors for ...
		RF Matching Capacitors The USM-MNOS - Bipolar RF Matching Capacitors are used for "Internal RF Matching" of high power and high frequency bipolar RF Transistors.
		Internal matching is a transforming network built inside the transistor package necessary to raise the low base impedance to a level usable by circuit designers.
		This is accomplished by integrating a MOS capacitor inside the same package with the bipolar transistor.
	www.usmicrowaves.com /rfcap.htm (636 words)

	The educational encyclopedia, electronic components, fets, transistor, triacs, opamps, igbt, transistors, bipolar ... (Site not responding. Last check: 2007-10-08)
		Bipolar junction transistors a bipolar transistor uses a small current to control a larger current, a little like a relay.
		Bipolar junction transistors bipolar junction transistor, a bipolar transistor essentially consists of a pair of PN Junction Diodes that are joined back-to-back
		Additionally, because the IGBT output has a bipolar transistor structure, its current conduction capability is superior to a bipolar power transistor.
	users.pandora.be /educypedia/electronics/composemiconductors.htm (626 words)

	POWER to the People: A History of Chipmaking at IBM
		Bipolar transistors are blazingly fast, but they consume a great deal of power, even in a standby or steady state.
		Now, another big difference between bipolar and FET transistors is topology: bipolar transistors have a vertical layout, while FET-based chips are built on the horizontal.
		So, while bipolar transistors run up against a wall where making them any smaller leads to unacceptable levels of electrical interference, FET-based chips can be made even smaller than that, and so packed even more densely in their larger surface area.
	www.devx.com /ibm/Article/20944 (4941 words)

	Feedback - Chapter 4: BIPOLAR JUNCTION TRANSISTORS - Volume III - Semiconductors (Site not responding. Last check: 2007-10-08)
		If we were to replace the transistor in a common-emitter circuit with another of differing β, the voltage gain for the amplifier would change significantly.
		The new capacitor "bypasses" AC from the transistor's emitter to ground, so that no appreciable AC voltage will be dropped from emitter to ground to "feed back" to the input and suppress voltage gain.
		Changes in transistor β or other internal component values will have comparatively little effect on voltage gain with feedback in operation, resulting in an amplifier that is stable and easy to design.
	www.allaboutcircuits.com /vol_3/chpt_4/10.html (2628 words)

	STMicroelectronics \| Power Bipolar Transistors \| Consumer (Site not responding. Last check: 2007-10-08)
		Following the market demand for optimized electronic solutions, by improving circuit efficiency, saving the space and reducing the component count on the board, ST is introducing a new series of dual bipolar transistors in a single package suitable for driving functions.
		As a leading expert in power bipolar transistors for TVs and monitors, ST is reinforcing the promotion of BU808DFI as an innovative and popular solution for horizontal deflection stage in TVs up to 21”.
		In addition to our well-known STT818B, ST is offering a variety of PNP bipolar transistors, which, due to their electrical characteristics, have been specifically designed for use as final switches for power management circuitry.
	www.us.st.com /stonline/prodpres/discrete/powebipo/consumer.htm (625 words)

	ShopForum - mosfet/bipolar transistors (Site not responding. Last check: 2007-10-08)
		Just a quick point about transistors: when buying a power amplifier do not be snowed by a salesperson who preaches "mosfet" transistors.
		These transistors are heavy-duty and high speed but create distortion.
		Bipolars are what you look for (should be standard).
	www.mercedesshop.com /shopforum/showthread.php3?t=3123 (212 words)

	Dr. David L. Pulfrey
		Pulfrey was elected Fellow of the IEEE in 2000 for contributions to the modeling of heterojunction bipolar semiconductor devices, and Fellow of the Canadian Academy of Engineering in 2003 for contributions to teaching and research in microelectronics.
		Presently, the emphasis of the carbon nanotube transistor work is on quasi-ballistic transport and on numerical, analytical and equivalent-circuit models for device design, analysis and performance prediction.
		J.P. Clifford, D.L. John and D.L. Pulfrey, ``Bipolar conduction and drain-induced barrier thinning in carbon nanotube FETs'', IEEE Trans.
	www.ece.ubc.ca /~pulfrey (704 words)

	Bipolar Junction Transistors (Site not responding. Last check: 2007-10-08)
		In a PNP transistor the majority charge carriers are holes and germanium is favoured for these devices.
		The collector is lightly doped to reduce the junction capacitance of the collector-base junction.
		The schematic circuit symbols for bipolar transistors are shown in figure 5.1.
	www.phys.ualberta.ca /%7Egingrich/phys395/notes/node75.html (204 words)

	IGBT - Insulated Gate Bipolar Transistors :: Joliet Technologies
		Today's inverters use Insulated Gate Bipolar Transistors (IGBTs) to switch the DC bus on and off at specific intervals.
		Power Bipolar Transistor and Power MOSFET are the most commercial advanced devices.
		Power Bipolar Transistors have lower conduction losses in the on-state, larger blocking voltages, but low switching speed.
	www.joliettech.com /igbt-insulated_gate_bipolar_transistors.htm (755 words)

	STMicroelectronics - Power Bipolar Transistors
		Emitter Switched Bipolar Transistor STC08DE150 and PWM driver L5991 for universal input aux SMPS.
		These transistors are available either in SMD SOT-223 and SOT-89 or through-hole TO-92 packages.
		A key parameter of these transistors is the excellent power dissipation.
	www.st.com /bipolar (369 words)

	Hovinen: Process Development and Device Modelling of Gallium Arsenide Heterojunction Bipolar Transistors, ISBN ...
		The heterojunction transistor process is developed as an essential part of this thesis.
		The developed transistor process relies on wet chemical isolation etching, and takes into account the restrictions that arise from the academic perspective of the processing environment.
		Degradation of transistor performance after excessive heating or current stress is also demonstrated, and a method for processing devices with minimal amount of heating is introduced as a means to tackle the problem.
	www.hut.fi /Yksikot/Kirjasto/Diss/2001/isbn9512254433 (442 words)

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