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	Deposition of borophosphosilicate glass - Patent 4546016
		In a method for forming a layer of borophosphosilicate glass on a suitable substrate by chemical vapor deposition of a mixture of oxygen and the hydrides of silicon, boron and phosphorus, the improvement wherein the deposition is carried out at a temperature of from about 365.degree.
		The use of borophosphosilicate glass as the dielectric material in such a structure is disclosed by Schnable and Kern in copending application Ser.
		Borophosphosilicate glass (BPSG) layers and their use in the semiconductor arts are disclosed by Kern in U.S. Pat.
	www.freepatentsonline.com /4546016.html (1715 words)

	Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures - US Patent 5656556
		The method of claim 1, wherein said first, second, third, and fourth borophosphosilicate glass are deposited using consecutive low pressure chemical vapor depositions (LPCVD) in a reactor.
		The method of claim 1, wherein said third borophosphosilicate glass has a thickness of between about 2000 and 5000 Angstroms.
		The method of claim 20, wherein said first, second, third, and fourth borophosphosilicate glass layers are deposited using consecutive low pressure chemical vapor depositions (LPCVD) in a reactor.
	www.patentstorm.us /patents/5656556-claims.html (1263 words)

	Borophosphosilicate glass - Wikipedia, the free encyclopedia
		Borophosphosilicate glass, commonly known as BPSG, is a type of silicate glass that includes impurities of both boron and phosphorus.
		Silicate glasses such as PSG and borophosphosilicate glass are commonly used in semiconductor device fabrication for intermetal layers, i.e., insulating layers deposited between succeedingly higher metal or conducting layers.
		BPSG has been implicated in increasing a device's susceptibility to soft errors - the Boron-10 isotope is good at capturing thermal neutrons from cosmic radiation.
	en.wikipedia.org /wiki/Borophosphosilicate_glass (167 words)

	United States Patent Application: 0030193053 (Site not responding. Last check: )
		A chalcogenide glass element 48, preferably a germanium selenide glass with metal ions, preferably silver ions, mixed or dissolved therein, is formed by depositing the glass over the diffusion barrier layer 46 and then planarizing the glass layer to make it level with the top surface of the insulating layer 12.
		Chalcogenide glass elements 58, preferably germanium selenide glass with metal ions, preferably silver ions, mixed or dissolved therein, are formed by depositing the glass over the diffusion barrier layers 56 and then planarizing the glass to make it level with the top surface of the insulating layer 12.
		Both the conducting layer 27 and the chalcogenide glass layer 58 are patterned and etched to form programmable conductor chalcogenide glass memory elements 58 with metal ions mixed or dissolved therein and electrodes and conducting lines 27 for the memory cells 58.
	spore.patentmatrix.com /projects/wncctc/Comp111/..\BOS\20030193053.html (7776 words)

	Dopant barrier for doped glass in memory devices patent (Site not responding. Last check: )
		Glass is usually the material for this kind of dielectric layer.
		Today, the glass is usually doped with materials such as boron and phosphorous (dopants) to reduce the temperature of the reflow process.
		The dopant in the doped glass, however, tends to diffuse outward and migrate to the surface structures and the substrate.
	www.freshpatents.com /Dopant-barrier-for-doped-glass-in-memory-devices-dt20050210ptan20050032314.php (995 words)

	ÃÀ¹ú×¨ÀûÉêÇë¹«¿ªËµÃ÷Êé 20030186526 - Method for contact profile improvement (Site not responding. Last check: )
		A borophosphosilicate glass layer is formed on the first oxide layer and the borophosphosilicate glass layer is treated by a planarization process.
		A second oxide layer is formed on the borophosphosilicate glass layer, the sidewall and the bottom of the contact window, with overhangs formed at an opening of the contact window.
		A spacer on the sidewall of the contact window is formed by etching the second oxide layer to further expose the surface of the borophosphosilicate glass layer.
	cxp.paterra.com /uspregrant20030186526cn.html (189 words)

	United States Patent Application: 0020055252
		The method according to claim 1, wherein said sacrificial layer is selected from the group consisting of an oxide layer, a nitride layer, a phosphosilicate glass (PSG) layer, a borophosphosilicate glass (BPSG) layer, a photosensitive material layer, and a polymer layer.
		Quartz glass is one of the materials for making the reticle 60 due to its low thermal expansion coefficient, low sodium content, high chemical stability, and high optical transmission, and an opaque chromium film and chromium oxide are coated to reduce the reflectivity.
		The sacrificial layer is formed by a spin-on glass technique such as a phosphosilicate glass (PSG) layer coated on the photosensitive layer 50 and the substrate 10.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20020055252.PGNR.&OS=DN/20020055252&RS=DN/20020055252 (2687 words)

	Semiconductor fabrication that includes surface tension control - Patent 7214978
		The method of claim 1, wherein the vapor phase etching comprises vapor phase etching a borophosphosilicate glass (BPSG) material adjacent to the side wall of the memory container.
		The integrated circuit includes a memory container formed on the substrate by forming the memory container in a borophosphosilicate glass (BPSG) material on the substrate, wherein a side wall of the memory container includes a double-sided capacitor.
		The memory container is also formed on the substrate by removing at least a part of the BPSG material based on a vapor wet etch operation with a vapor comprised of a hydrogen fluoride gas and an alcohol.
	www.freepatentsonline.com /7214978.html (7083 words)

	World Intellectual Property Organization (Site not responding. Last check: )
		A programmable conductor memory element comprises a glass electroltyte element, such as a chalcogenide glass element with metal ions mixed or dissolved therein, which is capable of forming a conductive pathway along or through the glass element under the influence of an applied voltage.
		In other embodiments the Ge-Se glass may be deposited first and then the silver ions diffused therein, such as by photodissolution, as is known in the art of programmable conductor memory cell fabrication.
		In Figure 7B, both the conducting layer and the chalcogenide glass layer have been patterned and etched to form a programmable conductor chalcogenide glass memory element 32 with metal ions mixed or dissolved therein and an electrode 34 for the integrated programmable conductor memory cell and diode device.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=03/88251.031023&ELEMENT_SET=DECL (7685 words)

	Bandwidth Market, Ltd (Site not responding. Last check: )
		For example, when using the process in a front end application, the use of boron phosphorus silicate glass (BPSG) may be eliminated and a phosphorus silicate glass (PSG) may be substituted for the BPSG as the insulating material to be planarized.
		By using a low melting planarizing material such as a low melting glass, planarizing material 30 may be deposited using, for example, the same CVD methods and apparatus used to deposit the insulating material 20 such as silicon oxide.
		The integrated circuit structure, having the low melting inorganic planarizing layer deposited thereon in accordance with the invention, is then etched to remove substantially all of the planarization layer as well as the high or stepped portions of the underlying insulation layer leaving a substantially planarized structure.
	www.bandwidthnews.com /resources/patents/data8/5112776.html (4770 words)

	Silicon Dioxide Properties
		The working of silica into glass (usually by the addition of natron -- sodium oxide -- to lower the melting point) has been known since antiquity, with polished glass lenses in eyeglasses and optical instruments dating back more than 5 centuries.
		Deposited silicon dioxide, almost always by CVD approaches, is almost as old as thermal growth on the substrate, and has been employed in various ways in IC fabrication due to its familiarity, versatility, and reliability.
		Borophosphosilicate glass (BPSG) can achieve a lower flow temperature: typically around 900 C for 4-5 wt.% of each dopant.
	www.timedomaincvd.com /CVD_Fundamentals/films/SiO2_properties.html (1361 words)

	Expert in: Silicon Wafer Cleaning, Etching, CVD
		He pioneered the preparation of silicon dioxide, silicate glasses, tantalum pentoxide, titanium dioxide, and transparent conductive films by thermal CVD and plasma-enhanced CVD based on vapor phase reactions of metal hydrides and organometallics, including tetraethyl orthosilicate (TEOS).
		He is best known for his original work on silicon dioxide, silicate glasses such as phosphosilicates and borophosphosilicates, silicon nitrides, and high dielectric-constant materials.
		Other accomplishments include the application of phosphosilicate glasses, aluminum oxide, silicon dioxide (silica), and plasma-silicon nitride for the passivation and corrosion protection of metallized integrated circuits, and titanium dioxide films as antireflection coatings for silicon solar cells.
	www.intota.com /viewbio.asp?mode=&bioFile=/xml/biofull/615538data.xml&bioID=615538&strQuery=semiconductor+etching (614 words)

	United States Patent Application: 0020111014
		The planarization method of inter-layer dielectrics as claimed in claim 1, wherein said dielectric layer is a borophosphosilicate glass layer.
		The planarization method of inter-metal dielectrics as claimed in claim 9, wherein said dielectric layer is a phosphosilicate glass layer.
		The planarization method of inter-metal dielectrics as claimed in claim 9, wherein said dielectric layer is a fluorosilicate glass layer.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20020111014&OS=20020111014&RS=20020111014 (2217 words)

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