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| | A.S96.html |
 | | Link, H. Keppner, P. Chabloz, A. Shah, Université de Neuchâtel, Laboratoire commun de Microtechnique, Neuchâtel, Switzerland; and J.F. Germond, J.-M. Haefliger, Hôpital communal, La Chaux-de Fonds, Switzerland; J. Pochon and G. Frosio, Ecole d'Ingénieurs du Canton de Neuchâtel, Le Locle, Switzerland. |
 | | A15.26 RECRYSTALLISATION OF PREAMORPHIZED SILICON INVESTIGATED BY RBS AND THE PAC METHOD, Reiner Vianden, Guido Rohrlack, Universität Bonn, Institut für Strahlen-und Kernphysik, Bonn, Germany; Russell Gwilliam, Brian J. Sealy, Zaeem Jafri, University of Surrey, Electronic and Electrical Engineering, Guildford, United Kingdom. |
 | | A15.27 THE EFFECTS OF DEPOSITION POWER AND TEMPERATURE ON THE PROPERTIES OF HEAVILY DOPED MICROCRYSTALLINE SILICON FILMS, Amir M. Miri and Savvas G. Chamberlain, University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, Canada. |
| lucy.mrs.org /meetings/spring96/Program/A.S96.html (4532 words) |
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