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Topic: Carrier generation and recombination

	Carrier generation and recombination - Wikipedia, the free encyclopedia
		Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices, such as photodiodes, LEDs and laser diodes.
		Carrier generation describes processes by which electrons gain energy and move from the valence band to the conduction band, producing two mobile carriers; while recombination describes processes by which a conduction band electron loses energy and re-occupies the energy state of an electron hole in the valence band.
		During radiative recombination, a form of spontaneous emission, a photon is emitted with the wavelength corresponding to the energy released.
	en.wikipedia.org /wiki/Recombination_(physics) (713 words)

	Recombination - Wikipedia, the free encyclopedia
		Recombination usually refers to the biological process of Genetic recombination and meiosis, a genetic event that occurs during the formation of sperm and egg cells.
		In chemistry, it is the state in which the hydrogen and oxygen gases which form within the battery cell during charging are recombined to form water.
		In solid state physics of semiconductors, carrier recombination is a process by which electrons and electron holes are mutually eliminated, and is balanced with carrier generation to establish the carrier density at thermal equilibrium.
	en.wikipedia.org /wiki/Recombination (267 words)

	2.11 Carrier generation and recombination
		Recombination of electrons and holes is a process by which both carriers annihilate each other: the electrons fall in one or multiple steps into the empty state which is associated with the hole.
		Carrier generation due to light absorption occurs if the photon energy is large enough to lift an electron from the valence band into an empty state in the conduction band, generating one electron-hole pair.
		Recombination in a depletion region and in situations where the hole and electron density are close to each other can not be described with the simple model and the more elaborate expressions for the individual recombination mechanisms must be used.
	ece-www.colorado.edu /~bart/book/recomb.htm (1500 words)

	Carrier recombination and generation
		Recombination of electrons and holes is a process by which both carriers annihilate each other: electrons occupy - through one or multiple steps - the empty state associated with a hole.
		In the case of non-radiative recombination, it is passed on to one or more phonons and in Auger recombination it is given off in the form of kinetic energy to another electron.
		Recombination in a depletion region and in situations where the hole and electron density are close to each other cannot be described with the simple model and the more elaborate expressions for the individual recombination mechanisms must be used.
	ece-www.colorado.edu /~bart/ecen3320/newbook/chapter2/ch2_8.htm (1474 words)

	.ps 16
		Recombination - process whereby an electron and a hole are eliminated when the electron (in the conduction band) loses sufficient energy and occupies the empty energy level in the valence band represented by the hole.
		In this case we assume majority carrier concentration to be unchanged from its equilibrium level and only the minority carrier concentration is of interest in this model.
		It is important to differentiate this spontaneous process from the externally induced generation such as through in introduction of light with photon energy larger than the bandgap energy.
	www.itee.uq.edu.au /~elec3200/lectures/L7.htm (666 words)

	Device Failures due to Wafer Crystal Defects
		refers to the average time interval between the generation and recombination of a minority carrier (electrons in p-type silicon and holes in n-type silicon) in a semiconductor crystal.
		The minority carrier lifetime affects the performance of the device in many ways, although generally (but not exclusively) a longer minority carrier lifetime is desired.
		The presence of defects and electrically neutral impurities in the crystal decreases the minority carrier lifetime, since these defects and impurities tend to form recombination centers within the crystal that 'trap' active carriers.
	www.siliconfareast.com /wafer-failures.htm (652 words)

	Summary (Site not responding. Last check: 2007-11-02)
		Each of these carriers may be moved by an electric field and/or by diffusion due to a density gradient of the carriers.
		Therefore, for these carrier currents we may accept sources (carrier generation) and sinks (carrier recombination), if the carrier generation and recombination processes take place in pairs.
		The following paragraph is aimed at a phenomenological description of the carrier transport in semiconductors included interactions between carrier density and the electric field and electrostatic potential, respectively.
	www.esr.ruhr-uni-bochum.de /rt1/semicond/node14.html (254 words)

	Courses (Site not responding. Last check: 2007-11-02)
		Advanced undergraduate/graduate-level course introducing the fundamentals of carrier generation, transport, recombination and storage in semiconductors.
		Modern semiconductor devices and integrated circuits are based upon the unique energy band, carrier transport and optical properties of semiconductor materials.
		Emphasis is on the quantum mechanical foundations of the properties of solids, energy bandgap engineering, semi-classical transport theory, semiconductor statistics, carrier scattering, electro-magneto transport effects, high field ballistic transport, Boltzmann transport equation, quantum mechanical transitions, optical absorption, and radiative and non-radiative recombination.
	www-ee.stanford.edu /~harris/courses.html (357 words)

	Dissipative Schrödinger-type operator as a model for generation and recombination (ResearchIndex) (Site not responding. Last check: 2007-11-02)
		Dissipative Schrödinger-type operator as a model for generation and recombination
		An explicit description of the characteristic function, the minimal dilation and the generalized eigenfunctions of the dilation is given.
		The quantities of carrier and current densities are rigorously defined.
	citeseer.ist.psu.edu /545779.html (524 words)

	Photoconductivity in PbTe nipi structures (Site not responding. Last check: 2007-11-02)
		One of the most interesting effects of nipi structures is the lifetime enhancement of excess carriers due to the built in bandedge modulation which separates the optically generated e-h-pairs in space and finally leads to an enhancement of the response.
		However the lifetime enhancement generally slows down the detector speed.
		The physical background of the concept is presented in a theoretical model which can be understood in terms of the enhanced ambipolar diffusion and the local control of the balance of carrier generation and recombination by applying a lateral external current between two selective contacts.
	www.unileoben.ac.at /~oswald/nipi/photo/triabstr.htm (146 words)

	Carrier Generation and Recombination Currents At Interface Traps in Surface-Potential-Based MOS Transistor Compact ...
		Carrier Generation and Recombination Currents At Interface Traps in Surface-Potential-Based MOS Transistor Compact Models
		In addition, the powerful diagnostic tool using the dc steady-state recombination current measured in the base-terminal (R-DCIV), by forward-biasing one of the p/n junctions inheritent in the MOS transistor structure, is simultaneously implemented in the compact models.
		This event is not open to the general public and NSTI reserves the right to refuse admission and participation to any individual.
	www.nsti.org /Nanotech2006/showabstract.html?absno=1242 (244 words)

	Course
		Typically, only one of these topics is included: Superconductivity, Phenomena associated with superconductivity, Phenomenological description via the London equations, Type I and type II superconductors, Josephson effects.
		Inhomogeneous semiconductors: Carrier generation and recombination, The continuity equation, The PN junction in equilibrium, Currents in a biased PN junction.
		Dielectric and Optical properties: Ferroelectric and piezoelectric properties, Frequency dependent polarizabilities, Free carrier effects, Ionic polarizablity.
	www.physics.uoguelph.ca /www_physics/single_course.php?idx=35 (347 words)

	COURSE TITLE: ECE 384 Solid State Electronic Devices
		WEEK 4: Equilibrium electrical properties of semiconductors (2/2): conduction band effective density of states, valence band effective density of states, mass action law, charge neutrality, Fermi energy, Fermi integral, electron and hole concentration.
		WEEK 5: Non-equilibrium electrical properties of semiconductors (1/2): drift, drift current, Ohm’s law, resistivity, conductivity, carrier collision and scattering, Hall effect, Lorentz force, mobility.
		WEEK 6: Non-equilibrium electrical properties of semiconductors (2/2): diffusion, diffusion current, diffusion length, Einstein relations, carrier generation and recombination mechanisms, carrier lifetime, capture cross section, quasi-Fermi energy.
	www.ece.northwestern.edu /courses/384.html (463 words)

	Christophe ANTOINE-SNOWDEN's such a geek ;-)
		Principles and Models of Semiconductor Devices —The fundamentals of carrier generation, transport, recombination, and storage in semiconductors.
		The physical principles of operation of the p-n junction, metal semiconductor contact, bipolar junction transistor, MOS capacitor, MOS and junction field-effect transistors, and related opto-electronic devices such as CCDs, solar cells, LEDs, and detectors.
		Free and forced waves-phasematching; slowly varying envelope approximation-dispersion, diffraction, space-time analogy; harmonic generation; frequency conversion; parametric amplification and oscillation; electro-optic light modulation; nonlinear processes in optical fibers.
	www.stanford.edu /~cmgas/coursework.html (999 words)

	[No title]
		This is due to the fact that as excess minority carriers they recombine as they diffuse from the junction.
		Current Density Calculation The current densities are calculated by considering the minority carrier profiles we have obtained.
		Here we resort to the assumption that there are no carrier generation or recombination inside the space charge region.
	www.itee.uq.edu.au /~elec3200/lectures/L11.doc (1208 words)

	Syllabus (Site not responding. Last check: 2007-11-02)
		Semiconductor Physics (10) Band gaps, density of states, materials, optical and electronic properties, carrier generation and recombination, mobility and diffusion, low dimensional structures, quantum wells, wires and dots, heterostructures.
		All full-time students carry out one minor literature survey, from a selection of topics.
		In addition they carry out a three-week survey and dissertation on the topic area of the summer research project.
	www.phy.hw.ac.uk /postg/msc_syll.htm (549 words)

	References in Articles in Edited Books (Site not responding. Last check: 2007-11-02)
		Carrier Generation and Recombination in p-n Junction and p-n Junction Characteristics
		Effect of Carrier Gas on the Properties of MOVPE-Grown GaN and GaN/AlGaN MQWs: a Comparison of H2 to N2 as a Carrier Gas
		Near-Band-Edge Recombination in GaN, GaN:Mg and GaN:Si between 12 and 650 K
	nsr.mij.mrs.org /refs/bookarticle (3066 words)

	[No title] (Site not responding. Last check: 2007-11-02)
		A dewed Parity, majority and minority carrier current balance model, for Surface Photovoltage.
		(SPV) is presented., A rigorous treatment of carrier junction generation and recombination are shown to be essential.
		We show that under weak above band gap photoexcitation, standard constant open-circuit voltage and constant photon flux SPV measurements can both reveal the bulk minority carrier diffusion length, provided the initial band bending Vbi, is sufficiently high.
	www.utoronto.ca /~emg/photo.html (121 words)

	Table of contents for Library of Congress control number 99014932
		Bibliographic record and links to related information available from the Library of Congress catalog.
		19 2.6 Carrier Generation and Recombination in Semiconductors....
		31 2.7 Simultaneous Treatment of Carrier Generation and Transport 34 2.8 Summary and Discussion....................................
	www.loc.gov /catdir/toc/fy022/99014932.html (299 words)

	Oxford University Press
		It contains a unified description of what is known in almost every aspect of the field.
		The basic phenomena covered in the first edition included fluorescence, exciton and charge carrier generation, transport, recombination, and photoemission; the new edition adds solitons, polarons, bipolarons, spin waves, and charge density waves.
		Chemical effects accompanying the discharge of electrons and holes at electrolytic surfaces
	www.oup.com /ca/isbn/0-19-512963-6 (445 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		Energy Citations Database (ECD) Document #6960469 - Measurements of carrier generation-recombination parameters in silicon-solar-cell material using MOS techniques
		Availability information may be found in the Availability, Publisher, Research Organization, Resource Relation and/or Author (affiliation information) fields and/or via the "Full-text Availability" link.
		Measurements of carrier generation-recombination parameters in silicon-solar-cell material using MOS techniques
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=6960469 (144 words)

	ECE 440 Spring 2005 - Section C Class Notes
		Energy bands (cont’d) and charge carriers in semiconductors
		Distribution functions, Fermi-Dirac statistics, Maxwell-Boltzmann statistics, and carrier concentrations
		Optical absorption and luminescence / Carrier Generation and Recombination
	courses.ece.uiuc.edu /ece440/bishop.html (84 words)

	Materials Science and Engineering
		Quantum behavior of electrons, Band/zone theory, Band structures (including amorphous materials)
		Carrier control and transport in doped narrow bandgap materials
		Carrier distribution and transport in unbiased and biased junctions
	www.eng.iastate.edu /mse.abet/appndxI-B332.html (184 words)

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