| |
| | Chemical etch monitor for measuring film etching uniformity during a chemical etching process - Patent 5573624 |
 | | The etch station of claim 7, wherein the monitoring means comprises the impedance monitor and further wherein the particular change in the electrical characteristic comprises a particular change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance. |
 | | Etch rates, etch times, and etch end points are difficult to consistently predict due to lot-to-lot variations in film thickness and constitution, as well as etch bath temperature, flow, and concentration variability. |
 | | Monitoring of the particular etching characteristic is effected by electrically sensing, in-situ, changes in an electrical characteristic of the wafer, such as, the impedance or an element or elements of impedance (e.g., admittance, capacitance, inductance, reactance and/or resistance), between the two electrodes 12. |
| www.freepatentsonline.com /5573624.html (3725 words) |
|