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Topic: Chemical mechanical polish

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	Method of making integrated circuits - Patent 5362669
		Planarization is accomplished by a chemical mechanical polishing process in which coplanar layers of a chemical mechanical polish resistant material are provided in a centre region of wide trenches as well as on the semiconductor substrate surface adjacent the trenches.
		The chemical mechanical polish resistant layer in the centre region of a wide trench forms an etch stop to prevent dishing of layers filling the trench during overall wafer planarization by chemical mechanical polishing.
		The substrate comprises a surface layer 134 of a chemical mechanical polish resistant layer on the substrate surface 146 and an overlying layer of dielectric 136.
	www.freepatentsonline.com /5362669.html (1958 words)

	[No title] (Site not responding. Last check: 2007-10-20)
		A chemical mechanical polishing (CMP) planarization of copper metal layers is used as a part of the advanced new semiconductor manufacturing technology.
		The polish- ing slurry is used with a polishing pad to remove excess copper from the wafer.
		The byproduct polishing slurry wastewater containing copper ions from the CMP of semiconductor microelectronic chips containing copper can be passed through a microfilter to remove solids in the form of a silica, alumina wastewater slurry.
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=00/02817.000120&ELEMENT_SET=DECL (5032 words)

	Journal of Electronic Materials: Effects of impurities on removal of polysilicon in chemical-mechanical polish
		Chemical-mechanical polishing (CMP) is a typical back-end technique for surface planarization in the semiconductor industry.' The main applications of CMP are planarization of interlayer dielectric (ILD) and interconnection metal layers in VLSI multilevel technology.
		In the study by Yang et al., the removal rates of CMP are significantly reduced for boron-doped silicon and polysilicon.6 In this paper, the influence of impurity concentration on the removal of polysilicon is investigated.
		During polishing, the slurry with 30 wt.% fumed silica abrasives suspended in a KOH aqueous solution was diluted by DI water with 1:10 volume ratio with a pH of 10-11.
	www.findarticles.com /p/articles/mi_qa3776/is_200101/ai_n8949503 (1389 words)

	Method for uniform polish in microelectronic device - US Patent 6358816 (Site not responding. Last check: 2007-10-20)
		Because of the mechanical properties of the pads used in the polishing process, there is a problem with "dishing," or the surface being non-uniform and more heavily polished near the edges of the device than in or near the center.
		One solution to the problem of uneven polish on the edges of such an array has been to include dummy active regions along the edges of an array in which the dummy regions are chemically (compositionally) and spatially (geometrically) identical to the intended active regions.
		The present invention provides an improved manner of achieving a uniform planar surface of features in a semiconductor substrate from a chemical mechanical polish process, and also provides substrates in which an area of common circuitry or common electrical properties can be planarized by a chemical mechanical polish.
	www.patentstorm.us /patents/6358816.html (2996 words)

	Chemical-mechanical polishing processes of planarizing insulating layers - Patent 5395801 (Site not responding. Last check: 2007-10-20)
		CMP selectivity is a function of pad compressibility, slurry, process pressure, platen speed, differential height, and the distance of measured low and high points, and pattern density, as is well perceived by people of skill in the CMP art.
		The polishing slurry comprised colloidal silica slurry, and the pad comprised a polyethylene polymer.
		During such initial polishing, higher CMP pressure is applied at the outermost projection as compared to the lowermost portions of the wafer, such that layer 44 effectively provides a high degree of protection in the lower scribe areas.
	www.freepatentsonline.com /5395801.html (5253 words)

	Chemical Mechanical Polishing
		CMP takes advantages of the synergetic effect of both physical and chemical forces for polishing of wafers.
		Both the pad and wafer are then counter rotated while a slurry containing both abrasives and reactive chemicals is passed underneath.
		In local Planarization parts of the wafer are polished uniformly but other parts have an uneven polish.
	www.chem.vt.edu /confchem/2000/a/rockwell/rockwell.htm (442 words)

	United States Patent Application: 0040119163
		This mechanical weakness is problematic in that, the low k dielectric materials may not adequately support the interconnect structure during fabrication.
		Unfortunately, the mechanical weakness of low k dielectric material is not particularly suitable for the stresses associated with the CMP or electropolishing.
		For example, it may be desirable to alter the composition and phase of the amorphous carbon nitride to increase its hardness, therefore, its mechanical strength when using it for an etch stop/diffusion barrier or a hard mask.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=/netahtml/PTO/srchnum.html&r=1&f=G&l=50&s1="20040119163".PGNR.&OS=DN/20040119163&RS=DN/20040119163 (2608 words)

	Journal of Electronic Materials: Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC ...
		Evidence of the polishing damage remained after chemical vapor deposition (CVD) growth on the samples without CMP and the defect density was worse for the oxidized samples compared to the unoxidized ones.
		Typical removal rates for unheated polishing were found to be approximately 150 Angstrom/h but this rate was found to have a significant error and to depend on a number of parameters including the age of the polishing pad and the pH of the polishing solution.
		The as-received control wafer was chosen to be as similar as possible to the CMP wafer, it was from the same vendor and thus had identical surface treatment but it should be noted that the wafers studied were not from the same boule.
	www.findarticles.com /p/articles/mi_qa3776/is_200103/ai_n8934143 (1081 words)

	Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuits ... (Site not responding. Last check: 2007-10-20)
		This CMP is achieved in a polishing tool using a polishing pad and a polishing slurry containing an abrasive material (e.g., alumina or silica).
		During polishing a chemical etchant is generally introduced to remove material from the wafer by both chemical and mechanical means.
		It is another object by a second embodiment of the present invention to provide a novel CMP/etch-back method for planarizing an interlevel dielectric (ILD) layer with improved ILD thickness over the underlying metal topography across the semiconductor substrate, and having a low-dielectric-constant (low-k) insulator in the recesses of the patterned electrically conducting layer.
	www.patentstorm.us /patents/6265315.html (4233 words)

	[No title] (Site not responding. Last check: 2007-10-20)
		The polish rates for copper and tantalum in DI water increase significantly when the abrasive particle density exceeds a threshold value that correlates with the reported microhardness values of the (bulk) materials obtained using classical diamond pyramid microindentation measurements.
		Chemical mechanical polish (CMP) removal rates data are fitted to the original Preston equation, Tseng's model, and a modified Preston equation which incorporates the deterioration characteristics of abrasives into the removal rate model.
		The effects of mechanical brush cleaning, chemical treatments, and polish processes on defect density for a 16 Mb memory technology are presented.
	www.amtech.org.cn /jswz/zzh/vltra99.htm (1893 words)

	Chemical Mechanical Polishing (Site not responding. Last check: 2007-10-20)
		polishing is not a function of hardness meaning that polishing is not a function of wear (if polishing a function of hardness, then harder glass should polish slower, but it does not, therefore polishing is not a function of wearing down the glass)
		polishing is not a function of softness meaning that polishing is not a function of flow (if polishing a function of softness, then softer glass should flow more and polish faster, but it does not, therefore polishing is not a function of glass flow or softness)
		polishing is a function of chemical durability meaning that chemical reactions influence polishing
	www.efn.org /~mbartels/tm/chemical_mechanical_polishing.html (468 words)

	[No title] (Site not responding. Last check: 2007-10-20)
		The depositing of the metal into the contact tunnel and the interconnect trench is preferably accomplished in a chemical vapor deposition reactor chamber.
		a mechanical planarization process such as a chemical mechanical polish is required to remove portions of the deposited film from regions exterior to interconnect trench 150.
		after the chemical mechanical polish typically used in a damascene process, an upper surface 161 of the interconnect structure is substantially planar with an upper surface
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=99/00839.990107&ELEMENT_SET=DECL (5908 words)

	Semiconductor Tour: Chemical Mechanical Planarization
		CMP (Chemical Mechanical Planarization) is an abrasive process used for polishing the surface of the wafer flat.
		It involves the use of chemical slurries and a circular (sanding) action to polish the surface of the wafer smooth.
		The smooth surface is necessary to maintain photolithographic depth of focus for subsequent steps and also to ensure that aluminum interconnects are not deformed over contour steps.
	www.infras.com /Tutorial/sld013.htm (111 words)

	SVM \| EDUCATION \| GLOSSARY
		Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing.
		Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
		Mechanical Test Wafer - A silicon wafer used for testing purposes.
	www.svmi.com /education/glossary.shtml (1606 words)

	Amazon.com: Chemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses : Fundamental ... (Site not responding. Last check: 2007-10-20)
		One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning.
		The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes.
		The book's focus is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-k CMP to develop a comprehensive mechanism for low-and high-removal-rate processes.
	www.amazon.com /exec/obidos/tg/detail/-/1402071930?v=glance (613 words)

	Articles - Semiconductor fabrication (Site not responding. Last check: 2007-10-20)
		It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.
		A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline cylindrical ingots (boules) up to 12" (300 mm) in diameter using the Czochralski process.
		These ingots are then sliced into wafers about 0.75mm thick and polished to obtain a very regular and flat surface.
	www.zgrey.com /articles/Fabrication_(semiconductor) (725 words)

	Publications
		Ling Wang and Fiona M. Doyle, “Mechanisms of Passivation of Copper in CMP Slurries Containing Peroxide and Glycine”, in Chemical-Mechanical Planarization, eds.
		Serdar Aksu and Fiona M. Doyle, “The role of glycine in the chemical mechanical planarization (CMP) of copper”, Journal of the Electrochemical Society, 149, (6) (2002) G352-G361.
		Serdar Aksu and Fiona M. Doyle, "The Role of EDTA and Glycine in the Chemical Mechanical Planarization (CMP) of Copper", Proceedings of the Second International Conference on Processing Materials for Properties, eds.
	www.mse.berkeley.edu /faculty/Doyle/pubs.html (950 words)

	yet2.com - TechPak - Methods for chemical mechanical polish of organic polymer dielectric films
		A process for the formation and planarization of polymeric dielectric films on semiconductor substrates and for achieving high chemical mechanical polish removal rates when planarizing these films.
		Preferred dielectric films are polyarylene ether and/or fluorinated polyarylene ether polymers which are deposited by a spin coating process onto a semiconductor substrate.
		In this way, the chemical mechanical polishing removal rate is increased compared to the removal rate for a fully cured polymer film.
	www.yet2.com /app/utility/external/indexpatent/19225 (241 words)

	Presentations
		Coppeta, J., Rogers, C., Philipossian, A., Kaufman, F., "Fluid Mechanics of Chemical Mechanical Polishing" Clarkson University Workshop on CMP, Lake Placid, NY, 1996.
		Coppeta, J., Rogers, C., Philipossian, A., Kaufman, F., Racz, L., Pad effects on slurry transport beneath a wafer during polishing, Third International Chemical Mechanical Polish Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, February 1998.
		Coppeta J., Rogers, C., Racz, L., Philipossian, A., Kaufman, F., B., The Influence of CMP Process Parameters on Slurry Transport, Fourth International Chemical Mechanical Polish Planarization for ULSI Multilevel Interconnection Conference, Santa Clara, CA, February 1999.
	www.tuftl.tufts.edu /CMPWebsite2/Public/Presentations/PresentationsHome.html (458 words)

	Publications - MIT Statistical Metrology
		D. White, J. Melvin, and D. Boning, "Characterization and Modeling of Dynamic Thermal Behavior in Chemical Mechanical Polishing (CMP)," Journal of the Electrochemical Society, vol.
		We urge readers to use the data in the CMP-MIC paper with caution: The data (with careful attention to the conditions reported) are valid; however, both speed and underlying pad type were changed in unison confounding the planarization results, so that the reader should not conclude that speed is the critical influential parameter.
		Chung, D. Boning, ``Evaluation of pad life in chemical mechanical polishing process using statistical metrology,'' Manufacturing Yield, Reliability, and Failure Analysis session, SPIE 1997 Symposium on Microelectronic Manufacturing, Austin TX, Oct. 1997.
	www-mtl.mit.edu /researchgroups/Metrology/PAPERS (3207 words)

	123 - Studebaker (Site not responding. Last check: 2007-10-20)
		Chemical Mechanical Polish........High Density Plasma ESC, HFRF WFR On Tue, 19 Aug 2003 05:57:27 GMT, JETman wrote: > > >Dave Lester wrote: >> >> > ABC, D fishes?
		And I imagine that AMAT is the evil empire to the >smaller producers.
		I did pretty well contacting out ME work for CMP and >PVD operations from '95 through early '01.
	www.apro.org /123-1768550-377-a.html (1297 words)

	Lecture Mo-1900: ATHENA: The Industry Standard of Process Simulation (Site not responding. Last check: 2007-10-20)
		ATHENA provides additional options for the modeling of silicides and chemical mechanical polish, and for Monte Carlo modeling of ion implantation.
		The 2D Topography Simulator Elite physically based etch and deposition models, handles material reflow and incorporates chemical mechanical polish.
		This includes polish pad degradation, pattern density effects, shadowing effects and simultaneous chemical and mechanical erosion.
	www.ihp-ffo.de /chipps/97/Djpg/Marquardt.html (862 words)

	Articles - Polishing (Site not responding. Last check: 2007-10-20)
		Polishing is the process of creating a smooth and shiny surface by using rubbing or a chemical action.
		In metallography polishing is used to create a flat, defect free surface for examination of a metal's microstructure under a microscope.
		Silicon based polishing pads or diamond solution can be used in the polishing process.
	www.sterlingsilvercenter.com /articles/Polishing (98 words)

	[No title] (Site not responding. Last check: 2007-10-20)
		The tool-related issues for plasma etch and chemical mechanical polish (CMP) for trench isolation are delineated in the Interconnect chapter rather than in this FEP chapter because of their overlap with back-end-of-line (BEOL) tool issues.
		Other starting material alternatives include hydrogen heat-treated polished wafers to improve near-surface characteristics and the growth of specially prepared low grown-in defect crystals.
		Memory circuits are commonly manufactured on lower cost Cz polished wafers, while logic ICs are generally manufactured on higher cost epitaxial wafers because of their greater robustness (e.g., gate dielectric integrity) during IC fabrication and latch-up suppression capability, although the latter may not be as critical with the implementation of shallow trench isolation (STI).
	public.itrs.net /files/1999_SIA_Roadmap/FEP/huff093099A.doc (835 words)

	IMIC Home Page
		Tenth International Conference on Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC) to be held February 22 - 25, 2005 at Fremont, California.
		2004 CMP-MIC for Ninth International Conference on Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC) to be held February 24 - 26, 2004 at Marina Del Ray, California.
		2003 CMP-MIC for Eighth International Conference on Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC) to be held February 19 - 21, 2003 at Marina Del Ray, California.
	www.imic.org (463 words)

	New Page 1
		Ouma, C. Oji, D. Boning, J. Chung, D. Hetherington, and P. Merkle, "Effect of High Relative Speed on Planarization Length in Oxide Chemical Mechanical Polishing," 1998 Chemical Mechanical Polish for ULSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, Feb. 1998.
		Stine, D. Ouma, R. Divecha, D. Boning, J. Chung, ''Rapid Characterization and Modeling of Pattern Dependent Variation in Chemical Mechanical Polishing,'' IEEE Trans.
		Tian, X. Tang, and D. Wong, 'Dummy feature placement for chemical Mechanical polishing uniformity in a shallow trench isolation process,' in Int.
	vlsicad.ucsd.edu /~yzheng/fill.html (404 words)

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