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Topic: Chemical vapor deposition


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  Atmospheric pressure chemical vapor deposition apparatus - Patent 4834020
Said assembly also includes means for introducing chemical vapors across the width of conveyor belt and onto the surface of wafers carried by the belt and an exhaust system for removing the chemical vapors and purge gases from the deposition zone of the chamber.
The chemicals are reacting in a deposition zone extending from the injector gas outlet underneath the injector ceiling to where the gases exit into the exhaust plenum.
It is important to minimize the deposition of the chemicals on the injector, the injector ceiling 79 and the end ceiling 83 to reduce particle incorporation and extend coating longevity.
www.freepatentsonline.com /4834020.html   (2939 words)

  
 Chemical Vapor Deposition Growth of Individual Single-Walled Carbon Nanotubes   (Site not responding. Last check: 2007-11-05)
Chemical Vapor Deposition (CVD) is a robust method for growing high-quality single-walled carbon nanotubes in predefined locations on large scales.
CVD allows as-grown tubes to be made into devices without the requirement of a dispersion step to separate bundles, or a purification step to remove the impurities.
The advantage of this technique is the reduced number of preliminary processing steps required to prepare the substrates before we deposit the catalyst, as well as the elimination of a lift-off step in the case of the resist mask method.
mrsec.wisc.edu /irg1/nuggets/chemical_vapor_deposition.htm   (552 words)

  
 Chemical vapor deposition - Wikipedia, the free encyclopedia
Chemical vapor deposition (CVD) is a chemical process often used in the semiconductor industry for the deposition of thin films of various materials.
In a typical CVD process the substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.
CVD is widely used in the semiconductor industry, as part of the semiconductor device fabrication process, to deposit various films including: polycrystalline, amorphous, and epitaxial silicon, carbon fiber, filaments, carbon nanotubes, SiO
en.wikipedia.org /wiki/Chemical_vapor_deposition   (777 words)

  
 Thin-film deposition - Wikipedia, the free encyclopedia
Deposition techniques fall into two broad categories, based on whether they are understood in terms of chemistry, or of physics.
Chemical vapor deposition (CVD) generally uses a gas-phase precursor, often a halide or hydride of the element to be deposited.
This is done in a high vacuum, both to allow the vapor to reach the substrate without reacting with or scattering against other gas-phase atoms in the chamber, and reduce the incorporation of impurities from the residual gas in the vacuum chamber.
en.wikipedia.org /wiki/Thin-film_deposition   (1085 words)

  
 CHEMICAL VAPOR DEPOSITION   (Site not responding. Last check: 2007-11-05)
Chemical vapor deposition (CVD) is a method of forming dense structural parts or coatings using the decomposition of relatively high vapor pressure gases.
Gaseous compounds of the materials to be deposited are transported to a substrate surface where a thermal reaction/deposition occurs.
With CVD, it is possible to produce almost any metallic or non-metallic element, including carbon and silicon, as well as compounds such as carbides, nitrides, borides, oxides, intermetallics and many others.
www.ultramet.com /cvd2.htm   (1191 words)

  
 CVD Sciences at Sandia National Laboratories   (Site not responding. Last check: 2007-11-05)
Chemical vapor deposition (CVD) is a widely used method for depositing thin films of a variety of materials.
New CVD processes are increasingly complex, with stringent requirements that make it more difficult to commercialize them in a timely fashion.
The software used to describe chemical reaction mechanisms is easily adapted to codes that model a variety of reactor geometries.
www.sandia.gov /1100/CVDwww/CVDSci.htm   (196 words)

  
 Chemical Vapor Deposition (CVD) Systems   (Site not responding. Last check: 2007-11-05)
Chemical Vapor Deposition (CVD) is a process widely used in the semiconductor and biotechnology industries for the deposition of a thin film of various materials in order to achieve surface modification.
Complete dehydration followed by CVD coating provides a superior silane/substrate bond that is stable after exposure to atmospheric moisture, extending the time available between process steps.
Chemical usage for a vapor deposition process is typically less than 1% of the amount needed for wet application processes, significantly reducing waste and chemical costs.
www.yieldengineering.com /default.asp?page=232   (123 words)

  
 SC Solutions: Chemical Vapor Deposition Modeling
The inputs available to control deposition are the flow rate and/or pressure of the carrier gas, the temperature of the susceptor, and the concentration of the precursor gases.
The control problem is to obtain deposition thickness with desired deposition uniformity using the available control inputs and measured outputs, in the face of the expected noise and disturbances.
The vaporizers are controlled by local (inner-loop) controllers, there are in-situ temperature sensors measuring substrate temperature corresponding to substrate (segmented) heaters, and metrology is employed to measure wafer properties of interest (deposition thickness and uniformity, stoichiometry).
www.scsolutions.com /mocvd.html   (1033 words)

  
 Accelrys: Atomistic Modeling of Chemical Vapor Deposition (CVD): Silicon Oxynitride
Chemical vapor deposition (CVD) is a method of choice to produce thin and high quality films with precise chemical composition and structural uniformity.
The deposition of NO on Si(100) surface followed by the oxynitride growth is chosen as a model in this computational investigation.
The goal is to obtain a quantitative and qualitative description of the initial NO deposition on Si(100) surface and the silicon oxynitride film growth.
www.accelrys.com /reference/cases/studies/SiNO.html   (581 words)

  
 Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits IBM Journal of ...   (Site not responding. Last check: 2007-11-05)
Materials deposited include conductors such as tungsten, copper, aluminum, transition-metal silicides, and refractory metals, semiconductors such as gallium arsenide, epitaxial and polycrystalline silicon, and dielectrics such as silicon oxide, silicon nitride, and silicon oxynitride.
However, the use of plasma-assisted deposition processes for microelectronic circuit manufacturing was not seriously considered until the introduction of commercial batch processing equipment in 1974 [5, 6].
When tetraethylorthosilicate (TEOS) is used as the silicon source for PECVD oxide deposition, there is less cusping because of the higher surface mobility of the reactants [28]; however, a void still forms if the gap is small enough, because the conformality of the film is not 100%.
www.findarticles.com /p/articles/mi_qa3751/is_199901/ai_n8844351   (1038 words)

  
 Organometallic Chemical Vapor Deposition of Platinum   (Site not responding. Last check: 2007-11-05)
Use CpPtMe3, the activation energy for initiation of deposition (i.e., for the induction period) is 115 +/- 10 kJ/mol on glass and 60 +/- 15 kJ/mol on Teflon.
The heat of vaporization of MeCpPtMe3 is 43.6 +/- 1.3 kJ/mol.
The vapor pressures of CpPtMe3 and MeCpPtMe3 at 23'C are 0.045 and 0.053 Torr.
www.seas.ucla.edu /~hicks/organ.html   (244 words)

  
 CNF - Chemical Vapor Deposition Capabilities
Deposition temperatures in the 650 to 750°C range.
Deposition temperature of 425°C. TFT N+/P+ Poly: LPCVD polysilicon furnace for TFT compatible glass substrates capable of depositing undoped, in-situ boron or phosphorus
Deposition temperatures range from 550 to 650°C with deposited resistivities in the 2-15 mohm-cm range for doped films.
www.cnf.cornell.edu /cnf_process_tf_cvd.html   (338 words)

  
 Modeling the Gas By-products of Metalorganic Chemical Vapor Deposition
Chemical vapor deposition (CVD) is used commercially to deposit a variety of coatings and bulk materials for many applications.
By using a gas-phase model of the CVD exhaust by-products in-situ, confidence in the sensor increases when the model and sensor are in agreement.
In one series of experiments, the CVD system was used to generate mass spectrometer and thermocouple data at 66 different pairs of oxygen-flow rates and reactor temperatures.
www.tms.org /pubs/journals/JOM/9908/Jones/Jones-9908.html   (2234 words)

  
 Chemical Vapor Deposition
ex: Si deposition from Silane at 650 C
deposition from silane and oxygen at 450 C (lower temp than thermal oxidation)
use to deposit: Al, C, Ge, Si, III-V compounds,.
www.uccs.edu /~tchriste/courses/PHYS549/549lectures/cvd.html   (278 words)

  
 Ultra-pure Chemical Vapor Deposition Silicon Carbide (CVD SiC)
Utilizing a state-of-the-art chemical vapor deposition manufacturing system, Morgan Advanced Ceramics Inc, CVD Materials produces chemical vapor deposition (CVD) silicon carbide that is superior to any silicon carbide available today.
CVD silicon carbide traditionally has been used in semiconductor processing applications, such as RTP and oxide etch chamber components, that can take advantage of the excellent thermal shock resistance of silicon carbide and its resistance to erosion by high energy plasmas.
Morgan Advanced Ceramics Inc, CVD Materials’ low resistivity silicon carbide has consistent properties and is ideal for susceptors, processing chambers, gas distribution plates, edge rings, heaters, electrostatic chucks, or any application that requires electrical conductivity, wear resistance, and thermal shock resistance.
www.performancematerial.com /cvd_sic.htm   (458 words)

  
 Chemical vapor deposition   (Site not responding. Last check: 2007-11-05)
CVD is a widely used method for depositing thin films of a large variety of materials.
In a typical CVD process, reactant gases (often diluted in a carrier gas) at room temperature enter the reaction chamber.
The gas mixture is heated as it approaches the deposition surface, heated radiatively or placed upon a heated substrate.
www.corrosion-doctors.org /MetalCoatings/chemical.htm   (127 words)

  
 Chemical Vapor Deposition   (Site not responding. Last check: 2007-11-05)
Chemical Vapor deposition is the process of depositing a thin film by chemically reacting a precursor material in the vapor phase.
For example, the Laser assisted CVD (LCVD) locally heats the area of the substrate that you want to deposit the material on instead of heating the entire substrate.
Pyrolytic reaction is where the thermal energy from the heated substrate causes the chemical reaction in the precursor material, and photolytic is where the photon energy of the laser causes a change in the electronic structure of the precursor material.
www.rpi.edu /dept/materials/COURSES/NANO/nugent/cvd.html   (188 words)

  
 Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits - Author bios
Previous assignments include plasma-enhanced and thermal low-temperature CVD dielectric process development and integration for 0.35-µm-0.175-µ m-generation DRAM in the development alliance with the Siemens and Toshiba corporations, where she had been the insulator project team leader for the past several years.
He joined IBM in 1984 at the development laboratory in East Fishkill and has worked in the fields of advanced CVD (chemical vapor deposition), analysis and design of plasma-enhanced and thermal chemical vapor deposition processes, and sputter deposition.
Conti received a B.S. in chemical engineering from the Polytechnic Institute of New York in 1983 and an M.S. in chemical engineering practice from the Massachusetts Institute of Technology in 1984.
www.research.ibm.com /journal/rd/431/coteaut.html   (944 words)

  
 Chemical Vapor Deposition   (Site not responding. Last check: 2007-11-05)
This tutorial seeks to provide an introduction to the underlying principles of chemical vapor deposition of films, with examples of films, reactors, and applications.
The emphasis is on microelectronic applications of these techniques, but the fundamentals of transport, chemistry, and plasma generation are of course applicable in many circumstances.
The aspects of thermodynamics, statistical mechanics, chemistry, and electromagnetism needed for understanding CVD processes are reviewed here, but only in sufficient depth to remind the reader of a past acquaintance with the topics, as in e.g.
www.timedomaincvd.com /CVD_Fundamentals/Fundamentals_of_CVD.html   (135 words)

  
 chemical vapor deposition
Materials (molecules) suitable for CVD are called precursors, because the final thin films emerge from them.
Chemical reactions leading to formation of such coatings have to be very selective which means that undesired or disturbing atoms should not be incorporated into the film.
Metal-organic compounds possess a particular potential for CVD, because the ligand sphere around the metal centre offers an interesting basis for the engineering of CVD-processes on a molecular level: this is then called MOCVD.
www.ruhr-uni-bochum.de /aci2/en/forschung/profil/cvd/index.htm   (209 words)

  
 Luminous Chemical Vapor Deposition and Interface Engineering
This reference provides in-depth coverage of luminous chemical vapor deposition (LCVD) and showcases the development and utilization of LCVD procedures in industrial scale applications — it offers a wide range of examples, case studies, and recommendations for clear understanding of this innovative technology.
The book provides broad coverage of the complex subjects and principles in material formation and deposition, surface-state of solid materials, surface dynamics of plasma-modified surfaces, imperturbable surface-states, interface engineering, the use of LCVD in the design of biomaterials, and more.
Target Audience: Chemical and materials engineers and technologists; researchers involved in nanofilm technology, biomaterials, microsensors, microelectronics, corrosion avoidance, composite materials, and selective membranes and barriers; and upper-levels students in these disciplines.
www.polysurfacesbookstore.com /pages/3937.html   (186 words)

  
 Micro-Chemical Vapor Deposition of Metal Oxides
A powered microheater can be used to localize the deposition of a sensing film onto its associated microhotplate using chemical vapor deposition.
When CVD gases are set to flow over an array, only heated micro-hotplates initiate the reactions to deposit a film.
This is advantageous because the process is simple, requires minimal contamination of the surface and avoids the reduced yield associated with multiple photolithography steps, and allows for high-temperature processing of the sensing film to optimize the materials properties.
www.cstl.nist.gov /div836/836.04/SensorProj/CVDOxides.html   (519 words)

  
 ETH - SURFACE - Chemical Vapor Deposition
Unfortunately, none of these materials is chemically and thermally stable on silicon: They all form an interfacial layer of silicon dioxide or metal silicate, which decreases the performance of the material.
For the deposition of such thin films, chemical vapor deposition (CVD) is one of the most powerful methods.
We will then use the newly designed vapor pressure apparatus developed within the LSST group, as well as thermal analysis to study the influence of the ligand sphere on volatility on a systematic basis.
www.surface.mat.ethz.ch /research/surface_functionalization/chemical_vapor_deposition   (1317 words)

  
 CVD   (Site not responding. Last check: 2007-11-05)
CVD is a very versatile process used in the production of coatings, powders, fibers and
With CVD, it is possible to produce almost any metallic or non-metallic element, including carbon and silicon, as well as compounds such as
Deposited by CVD are conformal and near net shape
www.ultramet.com /4.htm   (176 words)

  
 Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits - References
Plasma CVD papers in "Characterization of Plasma Enhanced CVD Processes," G. Lucovsky, D. Ibbotson, and D. Hess, Eds., Mater.
B. Fowler and E. O'Brien, "Relationships Between the Material Properties of Silicon Dioxide Deposited by ECR CVD and Their Use as an Indicator of the Dielectric Constants," J. Vac.
M. Kirchoff, D. Cote, M. Hauf, S. Nguyen, and W. Hoesler, "Hydrogen Content and Permeability of Thin CVD Silicon Nitride and Silicon Oxynitride Layers," Proceedings of the 192nd Meeting, The Electrochemical Society International Symposium on Chemical Vapor Deposition, Paris, France, 1997, pp.
www.research.ibm.com /journal/rd/431/coteref.html   (5549 words)

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