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	Czochralski process - Biocrawler (Site not responding. Last check: 2007-10-23)
		The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors, metals (e.g.
		This process is normally performed in an inert atmosphere, such as argon, and in an inert chamber, such as quartz.
		The process is named after Jan Czochralski, who discovered the method in 1916 while investigating the crystallization rates of metals.
	www.biocrawler.com /encyclopedia/Czochralski_process (282 words)

	Czochralski process - Wikipedia, the free encyclopedia
		The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g.
		This process is normally performed in an inert atmosphere, such as argon, and in an inert chamber, such as quartz.
		The process is named after Jan Czochralski, who discovered the method in 1916 while investigating the crystallization rates of metals.
	en.wikipedia.org /wiki/Czochralski_process (532 words)

	FAR Associates: Expert System Pyrometer Gives Accurate Temperatures Under Tough Conditions
		Emissivity, the ratio of the emitted radiation of a real radiator to that of an ideal radiator, depends on chemical composition, surface finish, the wavelength(s) at which the measurement is made and the temperature of the target.
		Process conditions were changed between the two measurements, resulting in different temperatures.
		Fig 7 Absorption spectrum of a high-pressure process; sodium and potassium lines are present (589 and 768 nm) in addition to a broadened absorption in the 620-740 nm range.
	www.pyrometry.com /ih2003.php (2312 words)

	Jan Czochralski - Wikipedia, the free encyclopedia
		Jan Czochralski (pronounced cho-HRAL-skee) (October 23, 1885 - April 22, 1953) was a Polish chemist who discovered the Czochralski process, which is used to grow single crystals and is used in the production of semiconductor wafers.
		He discovered the Czochralski method in 1916, when he accidentally dipped his pen into a crucible of molten tin rather than his inkwell.
		The experiments of Czochralski produced single crystals that were a millimeter in diameter and up to 150 centimeters long.
	en.wikipedia.org /wiki/Jan_Czochralski (388 words)

	How synthetic ruby is made - Background, History, Methods of synthesizing, Raw materials, The manufacturing process of ...
		By the time Verneuil died at the age of 57 in 1913, the process he had invented was being used to manufacture 10 million carats (2,000 kg, or 4,400 lb) of rubies annually.
		The hydrothermal process uses as a solvent an aqueous (water-based) solution of sodium carbonate (Na A corrosion-resistant metal such as silver or platinum is used to line the vessel that contains the liquefied ingredients for the Czochralski, flux, and hydrothermal processes.
		As nutrient material attaches itself to the seed and crystalizes (a process that is assisted by the seed's attachment to the relatively cooler rod), the rod is slowly raised, pulling the growing crystal out of the melt.
	www.madehow.com /Volume-4/Synthetic-Ruby.html (2319 words)

	Controlling Czochralski Crystal Growth --- Contents
		The main idea of the Czochralski-process was developed in the year 1918 by the Polish scientist Jan Czochralski (1885-1953).
		Two important variants of the standard process are the liquid encapsulated (LEC) and the vapour pressure controlled (VCz) process.
		It has to be remarked that it is -of course- possible to grow large diameter crystals with conventional LEC methods (or different process concepts), but the great amount of dislocations within such crystals forbids this type of processing for opto-electronic or epitaxial components.
	rcswww.urz.tu-dresden.de /~cwinkler/poverview.htm (837 words)

	Nanomachining Technology
		Approximately 75 percent of the single-crystal silicon used today is produced by the Czochralski process of crystal pulling; 25 percent is produced by the float zone refining technology (Veronis, 1979).
		Extreme care is taken to minimize the amount of the single crystal silicon that is lost in the slicing process by using the inside diameter of a ring-shaped saw blade.
		Dicing by grinding causes fracture and cracks to the edges of the dies, which are to be removed by a chemical etching process.
	serve.me.nus.edu.sg /nanomachining/wafer_preparation.htm (832 words)

	Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace - Patent ...
		Consequently, during the process of growing a crystal, there is a tendency for the dopant to either be depleted or overly concentrated because of the differential in segregation coefficients of semiconductor and dopant.
		While these sorts of batch process have proven adequate to provide silicon wafers at a satisfactorily low cost for semiconductor device fabrication, for example, the resulting cost of the silicon wafers is still too high to permit their widespread application as photovoltaic converters of sunlight.
		As is conventional practice in the Czochralski process, the diameter of the crystal pulled from the melt is controlled by varying the rate of pull, i.e., the speed with which draw rod 17 is moved upwardly in FIG.
	www.freepatentsonline.com /4282184.html (5455 words)

	[No title] (Site not responding. Last check: 2007-10-23)
		Jan Czochralski belonged to a generation actively participating in the exciting progress of science and technology at the beginning of the 20th century.
		Thus, the Czochralski method was a method of producing large single crystals by inserting a small seed crystal into a crucible filled with molten material, then slowly pulling the seed up from the melt with its simultaneous rotation.
		Czochralski wrote two handbooks: Lagermetale und ihre technologische Bewertung [Bearing metal and its technological evaluation] (coauthored with G. Welter, 1920, 1924) and Moderne Metallkunde in Theorie and Praxis [Modern metal science in theory and practice] (1924), which were later translated into several languages.
	www.ptwk.org.pl /eng/patron.html (2783 words)

	Single Crystal Growth for Wafer Production
		The basic CZ crystal growing process is more or less still the same as what has been developed in the 1950's.
		The purity of an ingot produced by the FZ process is higher than that of an ingot produced by the CZ process.
		process to remove the mechanical imperfections left by the grinding process.
	www.semiconfareast.com /crystal.htm (498 words)

	Semiconductor fabrication - RecipeFacts (Site not responding. Last check: 2007-10-23)
		Semiconductor device fabrication is the process used to create chips, the integrated circuits that are present in everyday electrical and electronic devices.
		It is a multiple-step sequence of photographic and chemical processing steps during which electronic circuits are gradually created on a wafer made of pure semiconducting material.
		A typical wafer is made out of extremely pure silicon that is grown into mono-crystalline cylindrical ingots (boules) up to 12" (300 mm) in diameter using the Czochralski process.
	www.recipeland.com /encyclopaedia/index.php/Semiconductor_device_fabrication (740 words)

	High purity carbon/carbon composite useful as a crucible susceptor - US Patent 5858486 (Site not responding. Last check: 2007-10-23)
		The process of claim 23, wherein the semiconductor ingot is a silicon ingot, including cutting the silicon ingot into silicon wafers, and further including providing a yield greater than 68 percent of good-for-structure silicon semiconductor wafers.
		In the CZ process, a seed crystal of known orientation is immersed in a molten pool of silicon.
		In the Czochralski (CZ) process, the current, conventional CZ crystal pulling susceptor is designed to hold the quartz crucible in place during the CZ crystal pulling operation, which in turn holds the polysilicon used to make the silicon crystal.
	www.patentstorm.us /patents/5858486.html (6273 words)

	Encyclopedia: Czochralski process
		Quartz crystal A crystal is a solid in which the constituent atoms, molecules, or ions are packed in a regularly ordered, repeating pattern extending in all three spatial dimensions.
		ImageMetadata File history File links Download high resolution version (2048x1536, 604 KB) Summary Title: Crucibles used in Czochralski method Desc: Two unused crucibles - smaller one is placed in the big crucible, which is not the case during the crystal growth process.
		An ingot is a mass of metal or semiconducting material, heated past the melting point, and then recast, typically into the form of a bar or block.
	www.nationmaster.com /encyclopedia/Czochralski-process (1688 words)

	Silicon (Site not responding. Last check: 2007-10-23)
		Since most impurities tend to remain in the molten region rather than resolidify, when the process was complete, most of the impurities in the rod had been moved into end that was the last to be melted.
		However, this technique was plagued with practical problems (such as the zinc chloride byroduct solidifying and clogging lines) and was evenutally abandoned in favor of the Siemens process.
		The Czochralski process is often used to make high-purity single silicon crystals for use in solid-state/semiconductor devices.
	www.sciencedaily.com /encyclopedia/silicon (1308 words)

	Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations - US Patent 6726764 (Site not responding. Last check: 2007-10-23)
		After formation of a crystal neck, the growth process enlarges the diameter of the growing crystal by decreasing the pulling rate and/or the melt temperature until a desired diameter is reached.
		During the growth process, the crucible rotates the melt in one direction and the crystal lifting mechanism rotates its pulling cable, or shaft, along with the seed and the crystal, in an opposite direction.
		After formation of a crystal neck, the typical process enlarges the diameter of the growing crystal 31 by decreasing the pulling rate and/or the melt temperature until a desired diameter is reached.
	www.patentstorm.us /patents/6726764.html (8680 words)

	Solar Energy Technologies Program: Silicon
		As the seed is slowly raised, atoms of the molten silicon solidify in the pattern of the seed and extend the single-crystal structure.
		In the Czochralski process, a seed crystal is dipped into a crucible of molten silicon and withdrawn slowly, pulling a cylindrical single crystal as the silicon crystallizes on the seed.
		The float-zone process produces purer crystals than the Czochralski method, because they are not contaminated by the crucible used in growing Czochralski crystals.
	www.eere.energy.gov /solar/silicon.html (1525 words)

	Czochralski's contribution: 50 years on
		The seminal work published by Czochralski in Zeitschrift für physikalische Chemie, received for publication on August of 19th, 1916, but published two years later [1], was an example, rarely met in our days of conciseness and concreteness in presenting research results.
		It is interesting to note that his research activity peaked in the years 1936 and 1937 (15 papers in 1936 is the best 'quantitative' result), and thereafter decreased slowly toward the years 1939 and 1940 when probably his last paper on research results on Al in Poland appeared [2].
		Czochralski died in 1953 at the age of 68, up until the end of his life being constantly watched by the Polish secret police, following some denunciations by a few people, unfortunately those coming also from the circle of his university colleagues.
	www.europhysicsnews.com /full/25/article10/article10.html (989 words)

	Where Does Silicon Come From? (Site not responding. Last check: 2007-10-23)
		As the focus slowly moves along the rod, the region behind the melt zone cools and recrystalises, forming single crystals, whilst the impurities concentrate in the melt and are effively 'dragged' from one end of the rod to the other.
		This process is repeated until the required purity is reached.
		Named after Jan Czochralski, who discovered the method in 1916, the principle of this method is to withdraw single crystals from the molten element, in this case, silicon.
	www.chem.shef.ac.uk /chm131-2003/cha03djh/where_silicon.html (525 words)

	An Overview of Progress - Introduction
		Soon afterward, selenium photovoltaic (PV) cells were converting light to electricity at 1 % to 2% efficiency (The conversion efficiency of a PV cell is the proportion of sunlight energy that a cell converts to electrical energy.) Selenium was quickly adopted in the emerging field of photography for use in light-measuring devices.
		In 1954, scientists at Bell Laboratories depended on the Czochralski process to develop the first crystalline silicon photovoltaic (or solar) cell, which had an efficiency of 4%.
		Today, however, this technology transfer process often works in reverse, as advances in PV research and development are sometimes adopted by the semiconductor industry.
	www.sandia.gov /pv/docs/PVFOverview.htm (530 words)

	CGS: Processes (Site not responding. Last check: 2007-10-23)
		The process was established in 1918 and is especially suited for cost-effective production of crystals with large diameters and high quality.
		In the Czochralski process, the raw material (polycrystalline Si) is put into a quartz crucible inside a furnace which is then evacuated.
		A simple method to grow crystals is the vertical Bridgman process, though its quality is not as good as that of the Czochralski process.
	www.cgs-gmbh.de /prozesse_e.htm (265 words)

	Czochralski Silicon (Site not responding. Last check: 2007-10-23)
		Single crystalline substrates are typically differentiated by the process by which they are made.
		Czochralski (CZ) wafers are the most commonly used type of silicon wafer, and are used by both the solar and integrated circuit industry.
		The process of making a large single crystalline silicon ingot by the Czochralski process is shown below.
	www.udel.edu /igert/pvcdrom/MANUFACT/CZ.HTM (87 words)

	Czochralski process Info - Bored Net - Boredom (Site not responding. Last check: 2007-10-23)
		Czochralski process Info - Bored Net - Boredom
		The most important application may be the growth of large cylindrical ingots of single-crystal silicon.
		Thin silicon wafers are cut from these ingots and polished to a very high flatness to be used for creating integrated circuits.
	www.borednet.com /e/n/encyclopedia/c/cz/czochralski_process.html (236 words)

	IDEAL OXYGEN PRECIPITATING SILICON WAFERS AND OXYGEN OUT-DIFFUSION-LESS PROCESS THEREFOR (WO9838675A1)
		In the process, the wafer is subjected to a heat-treatment (S2) to form crystal lattice vacancies (13), the vacancies being formed in the bulk of the silicon.
		More particularly, the present invention relates to a process for the treatment of silicon wafers which enables the wafers, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process to form an ideal, non-uniform depth distribution of oxygen precipitates.
		Single crystal silicon, which is the starting material for most processes for the fabrication of semiconductor electronic components, is commonly prepared with the so-called Czochralski process wherein a single seed crystal is immersed into molten silicon and then grown by slow extraction.
	www.delphion.com /details?pn=WO09838675A1 (1187 words)

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