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| | Patentee Index |
 | | Maldei, Michael; Dev, Prakash C.; Dobuzinsky, David; Faltermeier, Johnathan; Rupp, Thomas S.; Yu, Chienfan; Rengarajan, Rajesh; Benedict, John; and Naeem, Munir-ud-Din, to Infineon Technolgies AG Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device 06960523 Cl. 438-639. |
 | | Menon, Rajesh; Gil, Dario; Carter, David; Smith, Henry I.; and Barbastathis, George, to Massachusetts Institute of Technology System and method for maskless lithography using an array of improved diffractive focusing elements 06960773 Cl. 250-492.2. |
 | | Mottier, David; and Gueguen, Arnaud 06961894 Cl. 714-790. |
| www.uspto.gov /web/patents/patog/week44/OG/patentee/alphaM.htm (9355 words) |
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