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	Depletion region - Wikipedia, the free encyclopedia
		In semiconductor physics, the depletion region, also called depletion layer or depletion zone, is an insulating region within a conductive, doped semiconductor material where the charge carriers have been swept away through recombination.
		Understanding the depletion region is key to explaining modern semiconductor electronics: the operation of diodes, bipolar junction transistors, field effect transistors, and variable capacitance diodes rely on depletion region phenomena.
		The depletion region forms across the P-N junction when the junction is in thermal equilibrium, i.e.
	en.wikipedia.org /wiki/Depletion_region (343 words)

	[No title]
		is the same in the n-type and p-type region of the diode, carefully sketch the electric field and the potential as a function of position throughout the depletion region.
		The acceptor density in the p-type region is four times larger than the donor density in the n-type region.
		Compare the width of the quasi-neutral regions with the minority-carrier diffusion-lengths and decide whether to use the "long" or "short" diode approximation.
	ece.colorado.edu /~bart/ecen3320/newbook/chapter4/ch4_p.htm (644 words)

	[No title] (Site not responding. Last check: 2007-11-03)
		When no bias is applied to the PN junction the depletion zone 62 lies entirely to one side of the central line 65 so that the normal depletion region does not overlie the central axis of the optical profile 17 of light transmitted through the waveguide.
		Depletion zone 77 extends upwardly into the rib 12 to form the extended depletion zones 80 which is substantially V-shaped region extending across the entire width of the rib with the centre of the V aligned on a central vertical axis through the rib.
		An optical phase modulator according to claim 1 in which a doped region of a first type is located at an upper edge of the rib and doped regions of the other type are located in the semiconductor layer on each side of the rib, thereby forming two PN junctions.
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=00/58776.001005&ELEMENT_SET=DECL (3949 words)

	United States Patent Application: 0040046194
		A p.sup.+-type region as an electrode region 34 formed in the p-type region 32 of the photodiode is electrically connected to the drain part of a resetting MOS transistor M1 and the gate part of a source follower MOS transistor M2 through a wiring 15 made of a first metal layer.
		Most of the depletion layer DL is expanded to the side of the n.sup.--type region 61 from the pn junction surface of the electrode region 62 and the n.sup.--type region 61.
		Thereby, the depletion layers DL are formed by a pn junction in the lower surface side and by a pn junction in the upper surface side of the p-type region 82, and a state of a groove with a low potential in the semiconductor region 82.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=/netahtml/PTO/srchnum.html&r=1&f=G&l=50&s1="20040046194".PGNR.&OS=DN/20040046194&RS=DN/20040046194 (13761 words)

	The p-n diode current
		The boundary conditions at the edge of the depletion regions are described by (4.4.1), (4.4.2), (4.4.3) and (4.4.4).
		The electron and hole densities in the depletion region are calculating using the assumption that the electron/hole quasi-Fermi energy in the depletion region equals the electron/hole quasi-Fermi energy in the quasi-neutral n-type/p-type region.
		To the left of the ideal diode region there is the region where the current is dominated by the trap-assisted recombination in the depletion region described in section 4.4.3.2.
	ece.colorado.edu /~bart/book/book/chapter4/ch4_4.htm (5275 words)

	[No title] (Site not responding. Last check: 2007-11-03)
		It is well known in the semiconductor art that the spread of the depletion region of a reverse-biased rectifying junction (and so breakdown voltage of that junction) can be increased by reducing the dopant concentration and increasing the size of a semiconductor region associated with the rectifying junction.
		The second region 12 forms an ohmic contact with a first metallisation layer 15 forming one electrode of the diode while the third region 14 forms an ohmic contact with a second metallisation layer 16 forming the other electrode of the diode.
		increases, the portions of the depletion region adjacent to the resistive paths 21 expand until, as shown by the line d3, the depletion regions merge so that the first region 11 is substantially entirely depleted of free charge carriers.
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=01/59844.010816&ELEMENT_SET=DECL (2698 words)

	The P-N Junction
		In the p-type region there are holes from the acceptor impurities and in the n-type region there are extra electrons.
		Other electrons from the N region cannot migrate because they are repelled by the negative ions in the P region and attracted by the positive ions in the N region.
		For conduction in the device, electrons from the N region must move to the junction and combine with holes in the P region.
	hyperphysics.phy-astr.gsu.edu /hbase/solids/pnjun.html (456 words)

	Emerge Semiconductor
		The electron-hole pairs generated by light are swept away by drift in the depletion region and are collected by diffusion from the un-depleted region.
		This is due to the increase in the depletion region width and consequent decrease in junction capacitance.
		The junction capacitance is directly proportional to the diffused area and inversely proportional to the width of the depletion region.
	www.emergesemi.com /background.html (2200 words)

	[No title]
		In the n region, there are many electrons in the conduction band and few holes in the valence band due to the presence of the donor atoms.
		This causes the junction region to be depleted of most of the mobile charges (the conduction electrons and the valence holes).
		The channel is the area through the n region that has the majority charge carriers (in other words, the area that is not part of the depletion layerÔÈ-à.à.à.ððÔbetween the np region at the top and the np region at the bottom of the diagram).
	www.cbu.edu /~jholmes/P353/N408Transistors.doc (714 words)

	United States Patent: 6,437,389 (Site not responding. Last check: 2007-11-03)
		The channel is uniformly depletion mode or normally "on" and can conduct with zero potential applied to the conductive nodes A, B, C, and D. In operation, the conductive nodes A and C serve as multiple logic inputs, or active inputs, and can effect conduction in the depletion mode channel.
		At least one of the vertical gates is separated from the depletion mode channel by a first oxide thickness and at least one of the vertical gates is separated from the depletion mode channel by a second oxide thickness.
		Again, at least one of the vertical gates is separated from the depletion mode channel by a first oxide thickness and at least one of the vertical gates is separated from the depletion mode channel by a second oxide thickness.
	web.engr.oregonstate.edu /~flf/6437389.html (14280 words)

	X-ray CCD Detection Efficiency: Processes,Models and Parameters
		The depletion region of a typical front-illuminated ACIS flight device is between 65 and 75 microns thick; the back-illuminated devices have photosensitive volumes which are about 40 microns thick.
		Finally, it is worth stressing that the depletion approximation is just that; in adopting this approximation by fitting for the ``depletion depth'' parameter (see section 4.6.2), we have ignored the fact that the electric field does not drop linearly to zero in the substrate.
		The remarkable accuracy of this approximation is a consequence of the fact that the depletion region is quite large compared to the amount the initial charge cloud diameter changes over the energy band.
	space.mit.edu /ACIS/cal_report/node44.html (1075 words)

	Electrostatic analysis of a p-n diode
		We define the quasi-neutral region as the region adjacent to the depletion region where the electric field is small and the free carrier density is close to the net doping density.
		The charge in the depletion layer is then quickly dominated by the remaining ionized impurities, yielding a constant charge density for uniformly doped regions.
		Since the depletion layer width depends on the built-in potential, which in turn depends on the depletion layer width, this transcendental equation cannot be solved analytically.
	ece-www.colorado.edu /~bart/book/book/chapter4/ch4_3.htm (3418 words)

	Germanium Detectors
		This region is known as the depletion region.
		rays interacting with the germanium, through the processes described in section 3.6.1, will produce electron-hole pairs in the depletion region, which will then be swept to the edges of the detector because of the electric field gradient, constituting an electric current.
		Since the depletion region is the active part of the Ge detector, the active volume is required to be as large as possible.
	www.phys.jyu.fi /research/gamma/publications/ptgthesis/node35.html (539 words)

	The Depletion Mode MOSFET
		In the page on junction FETs, we noted that the electric field associated with a reverse-biased pn junction creates a depletion region within the channel, which restricts the flow of electricity through the channel.
		The stronger the field, the larger the depletion zone, and the greater the restriction of the channel.
		By repelling them away from the gate region, the applied gate voltage creates a depletion region around the gate area, thus restricting the usable width of the channel just as the pn junction did.
	www.play-hookey.com /semiconductors/depletion_mode_mosfet.html (522 words)

	4.4 The electrostatic analysis of a p-n diode
		The full-depletion approximation assumes that the depletion region around the metallurgical junction has well-defined edges with an abrupt transition between the fully depleted region where no carriers are present and the quasi-neutral region, a neutral region where the carrier density is close to the doping density.
		The electric field has to be zero outside the depletion region since any field would cause the free carriers to move so that the associated charge eliminates that field.
		The fact that the electric field is zero on both ends of the depletion region also implies that the total positive charge per unit area in the depletion layer equals the total negative charge.
	ece-www.colorado.edu /~bart/book/pnelec.htm (1056 words)

	Influence of Transit-Time and Quantum Well Negative Resistances on Quantum Well Oscillators
		It is assumed that the length of the quantum well region, l, is much smaller than the depleted spacer layer length W. The depletion region transit-time is thus much greater than the transit-time through the quantum well, and so transport through the quantum well is considered to be instantaneous here.
		is the dielectric constant of the depletion region.
		Under the assumption that the drift region carrier transport is at a constant saturation velocity, independent of the injection characteristic, the J - E curve can be extracted from the DBRTD J - V characteristic by accounting for the voltage drop due to the depleted spacer layers and ohmic contact resistance.
	weewave.mer.utexas.edu /MED_files/MED_research/RTDs_QWITTs/QWITT_sml_sig/qwitt_sml_sig.html (4005 words)

	Schottky Diode
		To find the depletion layer width, we start with the charge density in the semiconductor and calculate the electric field and the potential across the semiconductor as a function of the depletion layer width.
		As the semiconductor is depleted of mobile carriers within the depletion region, the charge density in that region is due to the ionized donors.
		Outside the depletion region, the semiconductor is assumed neutral.
	www.mtmi.vu.lt /pfk/funkc_dariniai/diod/schottky.htm (4251 words)

	Voltage Multipliers, Inc. Diodes Appendix A: Depletion Region (Site not responding. Last check: 2007-11-03)
		As shown in Figure 2 below, the depletion region increases in the direction of the weakest field (the area of highest resistivity) as reverse voltage is applied.
		This expansion continues as the reverse voltage is increased until the stress on the field reaches the breakdown threshold.
		This difference creates a variation in the depletion-region movement; that is, deep diffusion results in depletion- region movement in the N+ and P+ direction.
	www.voltagemultipliers.com /html/depletion.html (108 words)

	Current flow in PN Junction (Site not responding. Last check: 2007-11-03)
		p-side), holes are injected from the p-side (red), across the depletion region (around the junction, a region depleted of mobile carriers) into the n-side (blue).
		Near the depletion region boundary, the minority-carrier hole concentration is above the thermal equilibrium concentration because of these electrically injected holes.
		Going from left to right, the hole current in p-type region is drift current (due to small electric field in the neutral p-region, red), drift current in the depletion region (due to the built-in field), and diffusion current in the n-side (blue) due to the concentration gradient.
	www.acsu.buffalo.edu /~wie/applet/students/jiawang/pn.html (446 words)

	Olympus Microscopy Resource Center: Digital Imaging in Optical Microscopy - Concepts in Digital Imaging - Avalanche ...
		An avalanche photodiode is a silicon-based semiconductor containing a pn junction consisting of a positively doped p region and a negatively doped n region sandwiching an area of neutral charge termed the depletion region.
		Photons entering the diode first pass through the silicon dioxide layer and then through the n and p layers before entering the depletion region where they excite free electrons and holes, which then migrate to the cathode and anode, respectively.
		Avalanche diodes are very similar in design to the silicon p-i-n diode, however the depletion layer in an avalanche photodiode is relatively thin, resulting in a very steep localized electrical field across the narrow junction.
	www.olympusmicro.com /primer/digitalimaging/concepts/avalanche.html (385 words)

	Lessons In Electric Circuits -- Volume III (Semiconductors) - Chapter 6 (Site not responding. Last check: 2007-11-03)
		There is a PN junction inside the transistor, but its only purpose is to provide that nonconducting depletion region which is used to restrict current through the channel.
		As a result, a depletion region exists between the two materials, but it can never be expanded or collapsed.
		Indeed it is, for when a controlling voltage is applied between gate and source, the conductivity of the channel is changed as a result of the depletion region moving closer to or further away from the gate.
	www.ibiblio.org /obp/electricCircuits/Semi/SEMI_6.html (2078 words)

	< Course Name > - < Lesson Name >
		The electric field in the p-type material that is not included in the depletion region is assumed to be zero.
		The electric field in the n-type material that is not included in the depletion region is assumed to be zero.
		They were injected through the depletion region through the process of diffusion.
	tele.engr.usu.edu /Semiconductor_Devices/Modules/Junctions/Forward-Biased/Assessment/Language_Quiz/Forward_Biased_LQ.htm (477 words)

	X-ray CCD Detection Efficiency: Processes, Models and Parameters
		Once in the transfer channel, the charge may be transferred to the CCD output node by application of proper voltage waveforms to the various gates, and then measured.
		The depletion region of a typical front-illuminated ACIS flight device is between 65 and 75 microns thick; the back-illuminated devices have photosensitive volumes which are 30 to 40 microns thick.
		If the relevant mass absorption coefficients are known, (except near edges, where, as discussed in section 4.6.4, below, we have measured the mass absorbtion coefficients, we adopt the values published by Henke in 1993) the problem reduces to one of determining dimensions.
	www.astro.psu.edu /xray/docs/cal_report/node44.html (1174 words)

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