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Topic: Depletion width

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	[No title]
		is the same in the n-type and p-type region of the diode, carefully sketch the electric field and the potential as a function of position throughout the depletion region.
		, and the widths of the quasi-neutral regions.
		Compare the width of the quasi-neutral regions with the minority-carrier diffusion-lengths and decide whether to use the "long" or "short" diode approximation.
	ece-www.colorado.edu /~bart/book/book/chapter4/ch4_p.htm (644 words)

	P-n junction - Wikipedia, the free encyclopedia
		This nonconducting layer, called the depletion zone, occurs because the electrical charge carriers in doped n-type and p-type silicon (electrons and holes, respectively) attract and eliminate each other in a process called recombination.
		At the middle of the junction of the p-n material, a depletion region is created to stand-off the reverse voltage.
		The width of the depletion region grows larger with higher voltage.
	en.wikipedia.org /wiki/P-n_junction (849 words)

	4.4 The electrostatic analysis of a p-n diode
		The full-depletion approximation assumes that the depletion region around the metallurgical junction has well-defined edges with an abrupt transition between the fully depleted region where no carriers are present and the quasi-neutral region, a neutral region where the carrier density is close to the doping density.
		The charge in the depletion layer is then quickly dominated by the remaining ionized impurities, yielding a constant charge density for uniformly doped regions.
		The fact that the electric field is zero on both ends of the depletion region also implies that the total positive charge per unit area in the depletion layer equals the total negative charge.
	ece-www.colorado.edu /~bart/book/pnelec.htm (1056 words)

	Pre-irradiation Characteristics
		From the capacitance voltage measurements the depletion width as a function of bias was determined up to a bias of 180V, as shown in figure 4.
		Figure 4: The depletion width as a function of reverse bias, calculated from the capacitance voltage dependence of the device.
		The charge collection efficiency as a function of both bias and depletion depth, calculated from the CV data, are shown in figure 5 for two VPE diodes.
	ppewww.ph.gla.ac.uk /preprints/97/03/udine/node3.html (877 words)

	United States Patent: 6,380,765 (Site not responding. Last check: 2007-10-26)
		The complementary integrated circuit of claim 22, wherein the depletion mode channel region separating the source and the drain regions is controlled by a potential range of less than 0.5 Volts applied to at least one of the number of vertical gates.
		The channel is uniformly depletion mode or normally "on" and can conduct with zero potential applied to the conductive nodes A, B, C, and D. In operation, the conductive nodes A and C serve as multiple logic inputs, or active inputs, and can effect conduction in the depletion mode channel.
		That is the vertical gates separated from the horizontal depletion mode channel by a first thickness insulator material serve as active inputs and the vertical gates separated from the horizontal depletion mode channel by a second thickness insulator material serve as passing gates connected to passing logic input lines.
	web.engr.oregonstate.edu /~flf/6380765.html (15429 words)

	[No title] (Site not responding. Last check: 2007-10-26)
		Thus the electron current at the p-type edge of the depletion region (where electrons are minority carriers) is approximately equal to the electron current at the n-type edge of the depletion region (where electrons are majority carriers).
		Therefore the magnitude of the hole current at the p-type edge of the depletion region plus the magnitude of the electron current at the n-type edge of the depletion region is equal to the total current JT in the device.
		Minority carrier concentrations are small at the edge of the depletion region and rise to the value GÄ far from the pn junction. The electron concentration gradient in the p-type region causes an electron diffusion current to appear, that transports electrons DOWN the concentration gradient to the pn junction. A similar situation prevails for holes.
	solar.anu.edu.au /lectures/2224/3,4diode+cells.doc (9103 words)

	Diode - Encyclopedia.WorldSearch (Site not responding. Last check: 2007-10-26)
		When the diode is reverse-biased, the charge carriers are pulled away from the center of the device, creating a depletion region.
		A diode's current-voltage, or I-V, characteristic curve is ascribed to the behavior of the so-called Depletion Layer or Depletion Zone which exists at the junction between the differing semiconductors.
		Below a certain difference in potential between the two leads, the Depletion Layer has significant width, and the diode can be thought of as an open (non-conductive) circuit.
	encyclopedia.worldsearch.com /diode.htm (2514 words)

	Doping levels of both sides of the pn junction affects the width (Site not responding. Last check: 2007-10-26)
		If both sides are equally and highly doped then the depletion width will be small.
		The depletion width will extend to the lightly doped side so that the absolute value of charges will be equal in both sides.
		The change in the electric field at the junction calls for a change in the depletion width, since it is necessary that a proper number of positive and negative charges (in the form of uncompensated donor and acceptor ions) be exposed for a given value of the electric field (Streetman).
	www.eee.metu.edu.tr /~ngencer/Q3_6.htm (155 words)

	Forward and reverse biased diodes have capacitances associated with the pn junction (Site not responding. Last check: 2007-10-26)
		When the reverse bias is increased, the depletion width increases and hence the amount of charge in the depletion region increases.
		Consequently, a generalized definition of capacitance is used, which is the rate of change of charge with respect to a change in the applied reverse voltage.
		Cj under reverse bias can be obtained from the parallel plate capacitance formula by changing the zero-bias depletion width with the increased width.
	www.eee.metu.edu.tr /~ngencer/Q3_13.htm (209 words)

	Metal-Semiconductor Field Effect Transistor (MESFETs)
		The control of the channel is obtained by varying the depletion layer width underneath the metal contact which modulates the thickness of the conducting channel and thereby the current between source and drain.
		As the depletion region separates the carriers from the surface their mobility is close to that of bulk material.
		is the average depletion layer width in the channel layer.
	ece-www.colorado.edu /~bart/book/book/chapter3/ch3_6.htm (724 words)

	7.4 The Body Effect (Site not responding. Last check: 2007-10-26)
		changes the width of the depletion layer and therefore also the voltage across the oxide due to the change of the charge in the depletion region.
		The variation of the threshold voltage with the applied bulk-to-source voltage is typically observed by plotting the square root of the drain current as a function of the source-to-drain voltage for different values of the applied bulk-to-source voltage while the device is in saturation.
		This is due to the larger depletion layer width which reduces the relative variation of the depletion layer charge along the channel.
	people.deas.harvard.edu /~jones/es154/lectures/lecture_4/book/bodybias.htm (265 words)

	PHY310 (Site not responding. Last check: 2007-10-26)
		This results in a space charge region on either side of the junction which is depleted of free carriers (the depletion region).
		The presence of this depletion region establishes a potential step which acts to impede further carrier diffusion.
		Again the equation for the depletion region width was derived in the Lecture.
	www.shef.ac.uk /physics/teaching/phy310/Answers00_01.htm (505 words)

	Schottky Diode
		To find the depletion layer width, we start with the charge density in the semiconductor and calculate the electric field and the potential across the semiconductor as a function of the depletion layer width.
		As the semiconductor is depleted of mobile carriers within the depletion region, the charge density in that region is due to the ionized donors.
		This analysis assumes that the depletion layer is large compared to the mean free path, so that the concepts of drift and diffusion are valid.
	www.mtmi.vu.lt /pfk/funkc_dariniai/diod/schottky.htm (4251 words)

	The Coming Global Oil Crisis
		Oil depletion is inevitable, coming soon, and significantly, comes down to cases.
		Interactive Oil Depletion Atlas from David Strahan, whose new book, The Last Oil Shock, was released in April 2007 and can be obtained in the Americas from Amazon Canada.
		A continuous solar array, well within the width of the guideway, is sufficient to provide 100% of the power required for this efficient form of high capacity transit.
	www.oilcrisis.com (732 words)

	Electron Device Modeling:The Diode - Wikibooks
		This depletes the region near the interface of charge carriers and hence this region does not conduct well.
		Since the extent of the depletion of charges is some function of distance, the conduction band is bent to represent the energy required for diffusion in that region.
		The depletion width is given by the required amount of charge to be displaced to realize the diffusion potential.
	en.wikibooks.org /wiki/Electron_Device_Modeling:The_Diode (744 words)

	American Microsemiconductor manufacturers of Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits ...
		In another example, a depiction of the junction FET is shown in figure B. Again, as the reverse gate junction voltage is increased, the depletion region (high resistance region) extends into the conducting n-channel eventually pinching off the N-channel current.
		Pinchoff occurs when the depletion zone, caused by increased reverse gate voltage, extends into the FET channel to the extent that the FET channel resistance reaches some maximum value and the channel current is minimum.
		This light sensitive behavior occurs in the depletion zone of a reverse biased diode.
	www.americanmicrosemi.com /information/faq (1488 words)

	Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
		At 100 V the depletion depth was only 22.3 µm, increasing to 27.4 µm at 150 V. The low values were due to the high density of donors in the material.
		The maximum cce's for the two detectors were 100±7% and 93±7% at a bias close to 150 V. The cce plateaued for a depletion width between 10 µm and 15 µm as expected from the alpha particle range in GaAs.
		At zero applied bias, however, the depletion width, calculated from the capacitance measurements, was only 2 µm but a signal of 65% of the full alpha particle signal was obtained.
	ppewww.ph.gla.ac.uk /preprints/97/03/udine.html8 (2884 words)

	Depletion width - Wikipedia, the free encyclopedia
		Depletion width is the width of the depletion zone in a p-n junction.
		The depletion zone within a semiconductor device is a region of nonconductor whose width can be controlled by e-fields, i.e.
		This page was last modified 12:52, 19 April 2005.
	en.wikipedia.org /wiki/Depletion_width (68 words)

	Journal of Electronic Materials: Depth defined optoelectronic modulation spectroscopy
		It is shown that if the gate depletion region of a MESFET is maintained with a constant width, channel current optoelectronic modulation spectroscopy reveals a spectrum of responses arising predominantly from charge variations in the depletion region at the interface between the active layer and the substrate.
		Spectra of the remaining response were relatively insensitive to the chosen gate depletion width providing strong support for them being a representation of the response of traps in the back-plane.
		Because photo-conductive effects within the channel had a negligible effect in comparison with the effects of optical charge removal from the back-plane traps using differential channel current spectra with increasing depletion width is not effective for resolving states in depth within the active layer.
	www.findarticles.com /p/articles/mi_qa3776/is_200005/ai_n8883886 (1005 words)

	Electrostatic analysis of a p-n diode
		We define the quasi-neutral region as the region adjacent to the depletion region where the electric field is small and the free carrier density is close to the net doping density.
		The difference, however, is that the depletion layer width and hence the capacitance is voltage dependent.
		Since the depletion layer width depends on the built-in potential, which in turn depends on the depletion layer width, this transcendental equation cannot be solved analytically.
	ece-www.colorado.edu /~bart/book/book/chapter4/ch4_3.htm (3418 words)

	Encyclopedia of Laser Physics and Technology - parametric amplifiers, periodic poling, phase matching, photodiodes, ...
		Compared to an ordinary p-n photodiode, a p-i-n photodiode has a thicker depletion region, which allows a more efficient collection of the carriers and thus a larger quantum efficiency, and also leads to a lower capacitance and thus to higher bandwidth.
		Pump depletion is the phenomenon that the pump power for some process occurring in a device can be depleted e.g.
		For example, a pump depletion of 60% in a parametric oscillator means that 60% of the injected pump power are converted into signal and idler power, assuming that losses through other processes are negligible.
	www.rp-photonics.com /encyclopedia_p.html (9540 words)

	: Class DepletionWidth
		Class to calculate depletion width, and display a diagram.
		The minimum voltage must be known in order for the possible range of the depletion width to be calculated.
		- The width (in pixels) availabe for the diagram
	benfold.com /sse/docs/DepletionWidth.html (249 words)

	a window into MEMS: First Nano Talk (Site not responding. Last check: 2007-10-26)
		This value is determined by the depletion width of the pn junction.
		There is a problem with the depletion width being too small.
		If the depletion width is made sufficiently small such that the probability of tunneling is low then a successful nano device is created.
	praytothemachine.com /nano/archives/001625.html (536 words)

	Dr. Shabbir A. Bashar's Ph.D. Thesis - Chapter 4, Section 3
		= depletion width of an abrupt p-n junction
		Firstly, the depletion width (corresponding to a measured capacitance value or applied bias) can be calculated from either (eqn.
		However, the two requirements for the depletion approximation, that the depletion region be free from mobile charge and have an abrupt boundary, are harder to fulfill in practice.
	www.betelco.com /sb/phd/ch4/c43.html (783 words)

	Zener breakdown occurs only in heavily doped diodes (VZ<5 (Site not responding. Last check: 2007-10-26)
		The high doping level results in a very narrow depletion width.
		We assume that 1) the depletion width does not increase significantly for an applied reverse bias, 2) the conduction energy level of the n region shifts below the valance energy level of the p region.
		In such a case there are a number of electrons in the p-side valance band and there are a number of empty states in the n-side conduction band.
	www.eee.metu.edu.tr /~ngencer/Q3_12.htm (212 words)

	Electron Device Modeling:MESFET - Wikibooks
		Assume an N channel MESFET with uniform doping and sharp depletion region shown in figure 1.
		is given by the depletion width for a diode.
		d is the ratio of channel depletion to maximum depletion for the drain.
	en.wikibooks.org /wiki/Electron_Device_Modeling:MESFET (280 words)

	[No title]
		Channel Width – The channel width(perpendicular to the length) is defined as the distance between the isolation areas.
		The depletion region, however, is wide enough at the drain to touch the depletion region at the source.
		An electric field exists across the well/drain depletion region which can accelerate free electrons to high velocities.
	www.engr.sjsu.edu /jfreeman/BasicMOS.html (925 words)

	5.7.3 ID-VDS DC Characteristics for Small VDS
		The depletion regions are shown by the shaded regions.
		5.28 (a), the depletion region of the gate and substrate have not merged and this region is referred to as the linear region because in the limit of small V
		The merging of the two depletion regions is termed pinchoff.
	www.ee.duke.edu /~hcc/DEVICE/node8.html (350 words)

	U.S. EPA: What You Should Know about Refrigerants When Buying an AC Unit
		One of these substitutes is R-410A, a blend of hydrofluorocarbons (HFCs), substances that do not contribute to depletion of the ozone layer, but, like R-22, contribute to global warming.
		By containing and using refrigerants responsibly -- that is, by recovering, recycling, and reclaiming, and by reducing leaks -- their ozone depletion and global warming consequences are minimized.
		CFCs and HCFCs deplete the ozone layer, which acts as a blanket in the stratosphere that protects us from harmful UV radiation.
	www.hvacmechanic.com /epa/22phaseout.html (1648 words)

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