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	Dopant - Wikipedia, the free encyclopedia
		A dopant, also called doping agent and dope, is an impurity element added to a semiconductor lattice in low concentrations in order to alter the optical/electrical properties of the semiconductor.
		Pure semiconductors altered by the presence of dopants are known as extrinsic semiconductors (cf.
		Dopants are introduced into semiconductors in a variety of ways including ion implantation and surface diffusion.
	en.wikipedia.org /wiki/Dopant (173 words)

	[No title] (Site not responding. Last check: 2007-10-08)
		As the Ge dopant concentration increases, the band-to-band peak increases in intensity and undergoes impurity broadening thus masking the weak Zn peak, which is therefore not seen in figure 4.4a.
		We may equate the electron concentration to the dopant concentration, n, in the case of the present work since the dopant is a shallow donor, compensation is negligible and the temperature is high enough to prevent carrier freeze out.
		The reason for this large difference is unlikely to be a change in the convectional instability due to the presence of dopant in the melt and we therefore assume that the size of the temperature fluctuation is constant for a given puller and independent of the mean dopant concentration of the crystal being pulled.
	www.taloma.com /cwarwick/thesis/chapter5.html (6559 words)

	Techneglas: Products: Dopant Sources (Site not responding. Last check: 2007-10-08)
		Dopant sources, produced only in our Perrysburg facility, are one of two glass products within the Techneglas system that is not related to television.
		The region in which the dopant material migrates into the silicon wafer forms the building block for all semiconductor chips and devices.
		Dopants are made by combining raw materials in a melting process.
	www.techneglas.com /products/p-dopant.htm (200 words)

	Dopant Ion Fluctuations
		The charge due to a dopant ion is modelled by assigning a meshpoint with a dopant concentration equal to the inverse of the volume associated with that meshpoint.
		From this simulation study it is evident that random dopant ion arrangement is a formidable issue for sub-0.1um CMOS.
		The most obvious solution is to remove the dopant ions from the vicinity of the current flow path.
	www.cfdrc.com /nemo/pubs/isdrs_html/node2.html (688 words)

	Semiconductor OneSource: Semiconductor Glossary -- Search For : dopant
		introduction of dopant into semiconductor for the purpose of altering its electrical properties; allows control of resistivity/conductivity of semiconductor by several orders of magnitude; also used to convert p-type material into n-type material and vice versa.
		term typically refers to possible undesired changes in dopant profile during high-temeperature treatments applied, for various reasons, after dopant atoms have been introduced; in the case dopant redistribution is not desired only low thermal budget thermal treatments should be used.
		dopant concentration in the region immediately adjacent to the surface of doped semiconductor; may be different the dopant concentration in the bulk of semiconductor; needs to be monitored particularly in the case of epitaxial layers.
	semiconductorglossary.com /?searchterm=dopant (585 words)

	MBE Dopant Effusion Cell (molecular beam epitaxy) MBE - Veeco Instruments
		The Dopant Cell is a compact source optimized to provide precise and stable control of the relatively low fluxes needed for dopant constituents in molecular beam epitaxy (MBE).
		In spite of the high operating temperatures required for many dopant materials, thermal load on the system is minimized with very efficient heating of the cell.
		The small source may be combined on a single mounting flange with a gas inlet tube or a second solid source dopant to expand the range of doping elements available in a single source port.
	www.veeco.com /html/product_bymarket_proddetail.asp?ProductID=247 (170 words)

	Integrated Circuit - Background, How Integrated Circuit, Design, Raw Materials, The Manufacturing, Quality Control
		By altering the amount and types of dopants and changing the shapes and relative placements of P and N regions, integrated circuit components that emulate the functions of resistors and capacitors can be also be formed.
		As the dopant and gas pass over the wafers, the dopant is deposited on the hot surfaces left exposed by the masking process.
		In this method a dopant gas, like phosphine or boron trichloride, is ionized to provide a beam of high-energy dopant ions which are fired at specific regions of the wafer.
	www.madehow.com /Volume-2/Integrated-Circuit.html (2522 words)

	F723-99 Standard Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and ...
		The conversions are based primarily on the data of Thurber et al (1,2,3) taken on bulk single crystal silicon having dopant density values in the range from 3 X 10 cm to 1 X 10 cm for phosphorus-doped silicon and in the range from 10 cm to 1 X 10 cm for boron-doped silicon.
		1.2 The self consistency of the conversion (resistivity to dopant density and dopant density to resistivity) (see Appendix X1) is within 3% for boron from 0.0001 to 10 000 [omega][dot]cm, (10 to 10 cm) and within 4.5% for phosphorus from 0.0002 to 4000 [omega][dot]cm (10 to 5 X 10 cm).
		They may be extended to other dopants in silicon that have similar activation energies; although the accuracy of conversions for other dopants has not been established, it is expected that the phosphorus data would be satisfactory for use with arsenic and antimony, except when approaching solid solubility.
	www.astm.org /DATABASE.CART/REDLINE_PAGES/F723.htm (374 words)

	Dopant Profiling with the ACSTM
		In order to profile dopant concentrations in silicon using the alternating current STM, we use a difference frequency mixing strategy.
		To map out the frequency and voltage response as a function of dopant type and concentration, cleaned doped Si substrates were used.
		The difference frequency signal dependence on dopant density can be seen in Figures 2c and 2d.
	stm1.chem.psu.edu /~zjd/Dopants.html (657 words)

	Dopant activation of heavily-doped semiconductor by high current densities (US5882953) (Site not responding. Last check: 2007-10-08)
		Dopant activation of heavily-doped semiconductor by high current densities (US5882953)
		Dopant activation of heavily-doped semiconductor by high current densities
		whereby said supersaturated dopants in said semiconductor material is activated.
	www.delphion.com /details?pn=US05882953__ (290 words)

	Enhancing semiconductor device performance using ordered dopant arrays : Nature
		As the size of semiconductor devices continues to shrink, the normally random distribution of the individual dopant atoms within the semiconductor becomes a critical factor in determining device performance—homogeneity can no longer be assumed
		Here we report the fabrication of semiconductor devices in which both the number and position of the dopant atoms are precisely controlled.
		, relative to the undoped semiconductor, that is twice that for a random dopant distribution (- 0.4 V versus -0.2 V); we attribute this to the uniformity of electrostatic potential in the conducting channel region due to the ordered distribution of dopant atoms.
	www.nature.com /nature/journal/v437/n7062/abs/nature04086.html (307 words)

	Encyclopedia of Laser Physics and Technology - fiber core, optical fiber, dopant ions, off-centered core (Site not responding. Last check: 2007-10-08)
		Usually, it is a region of slightly increased refractive index, obtained normally not by using an entirely different glass, but by doping the glass with some index-raising material.
		Additional dopants are required for active fibers, i.e., for fibers which can be used for fiber amplifiers or lasers.
		In rare-earth doped fibers, the chemical composition of the core determines the solubility of the dopant ions.
	rp-photonics.com /fiber_core.html (503 words)

	Nanocharacterization Using Scanning Capacitance Microscopes (SCM)
		The SCM technique is based on the high frequency response of the metal-oxide-semiconductor (MOS) structure, formed between the SCM probe, sample oxide and semiconductor.
		The semiconductor dopant concentration under the probe is characterized by the change in capacitance, dC, induced by a bias voltage change, dV, applied between the probe and sample.
		Inverse modelling techniques can be used to extract dopant concentration information from the SCM measurements.
	www.azonano.com /details.asp?ArticleID=1251 (324 words)

	Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire Journal of ... (Site not responding. Last check: 2007-10-08)
		Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire Journal of Electronic Materials - Find Articles
		Effects of dopant, temperature, and strain rate on the mechanical properties of micrometer gold-bonding wire
		The stress-strain curves from these tests were analyzed to fit into empirical constitutive models that account for the strain, temperature, and strain-rate effects.
	www.findarticles.com /p/articles/mi_qa3776/is_200303/ai_n9172873 (240 words)

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