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Topic: Dry etching

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	Etching Processes
		Dry etching where the material is sputtered or dissolved using reactive ions or a vapor phase etchant
		The material to be etched is dissolved at the surface in a chemical reaction with the gas molecules.
		Dry etching is an enabling technology, which comes at a sometimes high cost.
	www.memsnet.org /mems/beginner/etch.html (1086 words)

	dbanks - Dry etching - Microengineering Intro (Site not responding. Last check: 2007-10-14)
		The most common form of dry etching for micromachining applications is reactive ion etching (RIE).
		Ions are accelerated towards the material to be etched, and the etching reaction is enhanced in the direction of travel of the ion.
		Unlike anisotropic wet etching, RIE is not limited by the crystal planes in the silicon.
	www.dbanks.demon.co.uk /ueng/dryetch.html (86 words)

	Patent 4634495: Dry etching process
		In a dry etching process for patterning a substrate (2), an etching mask (4) consisting of a chemically deposited oxide, for example Al.sub.2 O.sub.3, is used and the etching is carried out in a fluorine-containing plasma.
		A dry etching process according to claim 1, wherein the oxide layer is used in a mask thickness (a) of 50-500 nm.
		A dry etching process according to claim 1, wherein etching masks (4) of greater thickness are prepared by depositing individual layers of the organic compound several times in sequence.
	www.freepatentsonline.com /4634495.html (2228 words)

	Semiconductors: Silicon: Device Fabrication: Etching
		Dry Chemical Etching: Dry etching is commonly used due to its ability to better control the etching process and reduce contamination levels.
		Dry processing effectively etches desired layers through the use of gases, using either, a chemically reactive gas, or through physical bombardment of argon atoms.
		The wafer to be etched is attached to a negative electrode, or "target," in a glow-discharge circuit.
	www.osha.gov /SLTC/semiconductors/devicefab/etching.html (688 words)

	Fabrication of magnetic recording heads and dry etching of head materials
		In ion-beam etching, the wafer stage is usually tilted with respect to the incident beam and rotated around the normal of the stage surface.
		For example, by mixing a small amount of oxygen with the argon used for etching, the etching rate of metals such as Cr, Ti, and Al which form tenacious oxides on their surfaces can be reduced by a factor of 6 to 8 [20].
		Vertical etching was achieved by cooling the wafer chuck to -100°C. The etching of the organic insulation material has been used to fabricate the optical lapping guide, which is used to control the lapping process used in recording-head fabrication [45].
	www.research.ibm.com /journal/rd/431/hsiao.html (6801 words)

	Progress Report #5
		All etching processes involve three basic events: (1) movement of the etching species to the surface to be etched, (2) chemical reaction to form a compound that is soluble in the surrounding medium, and (3) movement of the by-products away from the etched region, allowing fresh etchant to reach the surface.
		Etching is isotropic or crystallographic, and temperature and reactant flux are used to adjust etch character.
		A major problem with ion beam etching is that the etch rate is very low because of the nature of physical sputtering, and it is also recognized that the etch rate of ion milling is very much dependent upon the incidence angle.
	www.mse.ufl.edu /~spear/recent_papers/NanoscaleMRAM/NanoscaleMRAM.htm (7105 words)

	Dr. Shabbir A. Bashar's Ph.D. Thesis - Chapter 5, Section 2
		Dry etching of ITO using a gas mixture of acetone, argon and oxygen - essentially a hydrocarbon etch with acetone being the source of reactive organic radicals in the plasma discharge - has also been reported [149].
		Dry etching using Ar was found to be the most suitable in terms of speed and selectivity.
		The dry etching chamber was pumped to pressures better than 1e-4 torr; Ar was then flowed in at a constant rate to maintain a chamber pressure of 11 mtorr prior to exciting the plasma.
	www.betelco.com /sb/phd/ch5/c52.html (1718 words)

	Dry Etching (Page 1 of 2): Plasma Etching
		In wafer fabrication, etching refers to a process by which material is removed from the wafer, i.e., either from the silicon substrate itself or from any film or layer of material on the wafer.
		Like wet etching, dry etching also follows the resist mask patterns on the wafer, i.e., it only etches away materials that are not covered by mask material (and are therefore exposed to its etching species), while leaving areas covered by the masks almost (but not perfectly) intact.
		A completely anisotropic etching process that removes material in the vertical direction only is very desirable, since it will follow the mask patterns on the wafer very faithfully, leaving any material covered by mask material basically untouched.
	www.semiconfareast.com /dryetch.htm (419 words)

	Dry etching of silicon (Site not responding. Last check: 2007-10-14)
		Dry etching of three dimensional structures in silicon has gained more and more significance within the last decade (Fig.
		Other important factors are the etch uniformity, the anisotropy and the average roughness of the surfaces of the etched trenches.
		The etching of deep trenches is useful for a wide range of micromechanical devices e.
	www-mat.ee.tu-berlin.de /files/research/dryetch/dryetch.htm (147 words)

	13321. Etching titanium
		Etching titanium with a gold mask should be quite fast with hydrofluoric acid.
		Dry etching Ti is rather easy with a fluorine containing gas such as SF6 or CF4 or NF3.
		If anisotropy is desired, you must lower the pressure and operate in reactive ion etch mode (RF power to the sample electrode and ground the counter electrode).
	www.finishing.com /133/21.shtml (157 words)

	Dry Etch Damage (Site not responding. Last check: 2007-10-14)
		For devices with submicrometer dimensions, dry etching is necessary for pattern transfer to maintain vertical profile.
		The etch condition for curve A was microwave and rf power of 50 W, Cl2/Ar at 1/9 sccm, 1 mTorr pressure, and 13 cm source distance.
		The etch conditions were 100 W of rf power, Cl2/Ar gas flow at 10/10 sccm, 2 mTorr pressure, 8 cm source distance, and 30 °C stage temperature.
	www.eecs.umich.edu /~pang/projects/damage.html (1211 words)

	Research Brochure (Site not responding. Last check: 2007-10-14)
		In the case of dry etching, ions of a species likely to attack the material chemically are generated and directed at the specimen.
		In general, the two main advantages of dry etching are (i) the use of highly directed ions results in a profile of the etched material which can be anisotropic (i.e.
		One RIE machine is used for chlorine chemistry, one for fluorine chemistry, one is devoted to etching in methane/hydrogen and the remaining one is used for mixed chemistries.
	www.elec.gla.ac.uk /groups/dryetch/Welcome.html (1104 words)

	Etching Characteristics and Surface Analysis of Molecular Bean Epitaxy Grown P-Type Aluminum Gallium Nitride With Boron ...
		Abstract: Dry etching of magnesium doped p-type aluminum gallium nitride grown by molecular beam epitaxy (MBE) has been carried for the first time by inductively coupled plasma (ICP) system via the boron trichloride/chlorine (BCl3/Cl2) gas system with variations in chuck power, ICP power, chlorine (Cl2) ratio in Cl2/BCl3 and process pressure.
		Etching rates were influenced by ICP power, and chuck power increased chlorine ratio in BCl3/ Cl2 and process pressure.
		The increase in the etching rate is caused by an increased number of chloride radicals created by high inductive power and increased ion flux and thus, physical bombardment and chemical etching components are enhanced.
	www.stormingmedia.us /91/9149/A914924.html (308 words)

	ICP DRY ETCHING OF III-V NITRIDES (Site not responding. Last check: 2007-10-14)
		This indicates that the etch was reaction limited under these powers (bottom), with the etch rate increasing with increasing plasma density, irrespective of the decreasing ion energy.
		At 350 W rf chuck power, the etch rates initially increased rapidly as the ICP power was increased from 0 W to 500 W. The dc bias was higher under these conditions, ranging from -645V at 0W ICP to -58V at 1500W ICP power.
		This may be due to the fact that sharp features tend to be etched faster due to the angular dependence on ion milling, and as long as there is no preferential loss of nitrogen from the surface, the RMS roughness may decrease.
	nsr.mij.mrs.org /MRS/S97-D/3.7 (1851 words)

	FSRM - Course: Dry Etching - Techniques and Applications (Site not responding. Last check: 2007-10-14)
		Dry etching is a very powerful technique for microsystems fabrication.
		It is the better alternative to wet etching especially for deep anisotropic etching of polymer or silicon, because it provides better etch rate and profiles control.
		The purpose of this course is to give an overview of theory, technologies, processes and potentialities of dry etching in microsystems fabrication.
	www.fsrm.ch /doc/c184.asp?lan=e (418 words)

	A New Theory of Etching
		The dark areas of this silicon surface indicate where atoms have been removed, or "etched," while the brightest areas consist of atoms that have re-paired in new locations after their partners were etched.
		The ancients used acids to etch surfaces, but chip manufacturers use gases containing halogen atoms, giving rise to the term "dry etching." On the silicon (100) surface--the crystal face studied by the PRL authors--neighboring silicon atoms lower their energy by moving slightly together to form chains of dimers, like dancers lined up two-by-two.
		To begin the dynamic dance of dry etching, a halogen atom hops from one silicon atom in a dimer to the other, leaving one silicon with two halogens and its partner with none.
	focus.aps.org /story/v3/st4 (524 words)

	No Title (Site not responding. Last check: 2007-10-14)
		While conventional dry etching techniques have been successfully applied towards etching of the group-III nitrides, very few wet etchants have been identified, a consequence of the unusual chemical inertness of the nitrides.
		Since dry etching processes possess a number of significant drawbacks compared to wet etching techniques (such as the formation of ion-induced damage, difficulty in etching layers selectively, and relative complexity), it is important to explore alternative patterning methods.
		The results on etch rates and etch selectivities were related to the measured ion density and radical density using a Langmuir probe and quadrupole mass spectrometry.
	www.mrs.org /meetings/spring97/abstract_book/d/d2 (2310 words)

	Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Site not responding. Last check: 2007-10-14)
		This enables SENTECH to develop dry etching processes on their ICP plasma etching system SI 500 installed in FBH´s high quality cleanroom environment and to use this application lab for customer oriented processes.
		The system is well adopted for both, high rate dry etching processes and low bias etching processes for significantly reduced radiation damage.
		Process developments on the part of SENTECH are focussed on sophisticated and innovative dry etching processes for III-V semiconductors such as GaAs, InP, GaN and SiC for various applications in micro- and optopelectronics.
	www.fbh-berlin.de /english/trans/trans_2.html (274 words)

	microFAB dry etching
		Dry etching techniques (RIE, ion beam and plasma etching) are intensively used at microFAB for patterning of dielectrics, polysilicon and metal layers.
		Further important applications are the photoresist stripping and the anisotropic deep silicon trench etching.
		All processes were optimized regarding troughput, etch rate selectivity toward mask and substrate, CD loss (undercut), and etch profile (taper).
	www.microfab.de /services/dry_etching.htm (200 words)

	Dry Etching - Wikipedia, the free encyclopedia
		Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions that dislodge portions of the material from the exposed surface.
		Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically.
		This page was last modified 14:51, 14 April 2005.
	en.wikipedia.org /wiki/Dry_etching (96 words)

	Search results from the MIJ-NSR reference database
		Dry Etching and Implantation Characteristics of Iii-n Alloys
		Dry etching of gallium nitride using CCl2F2, CCl4 and air.
		The influence of CH /Ar plasma etching on the conductivity of n-type gallium nitride
	nsr.mij.mrs.org /refs/results/etch.html (1294 words)

	Micro-electronics (Site not responding. Last check: 2007-10-14)
		MESFETs, HEMTs, HFETs and HBTs etc are all device types that benefit from using dry etch technology.
		Specific benefits of dry etching over wet etching include increased yield, improved uniformity across 4" & 6" wafers and improved run to run reproducibility.
		Key OIPT processes for micro-electronics using dry etching are the through-wafer via-hole etch and the low damage gate recess etch.
	www.oxinst.com /PLMAPP158.htm (61 words)

	Fabricating Diamond Membranes Using Reactive-Ion Etching
		The rate of dry etching of silicon is more than 3 times that of hot KOH.
		Next, reactive-ion etching is effected by use of a radio-frequency-induced SF plasma.
		The diamond membrane exposed by etching of the substrate was found to be in a state of compressive stress.
	www.nasatech.com /Briefs/July99/NPO20477.html (317 words)

	DPD Gifts: Etch (Site not responding. Last check: 2007-10-14)
		Glass Etching and Engraving We undertake all kinds of glass etching and engraving - from personalised thimbles and trophies toand quantities required.
		We use photolithography and potassium hydroxide etching to pattern the probe bases then, using etched through alignmentdevices and then the cantilevers are released in a final KOH etch.
		Ltd Home Deep silicon etching We have two methods of dry etching: DRIE for silicon and RIE for Oxide, Nitridehave broad knowledge and solid experience of etching sub-micron features, particularly for optical
	www.daisypatchdesigns.com /engraving/etching/etch.html (326 words)

	Dry Etching Publications
		S.M. Morley, 'The Etching of Si and Al in CCl4 Plasmas', PhD Thesis, 1991.
		Wade, 'Spectroscopic Studies of the Reactive Ion Etching of GaAs in CCl2F2 and CCl3F Plasmas', PhD Thesis, 1989.
		A.J. Hydes, 'Spectroscopic Studies of the Etching of Si and SiO2 Substrates in CF4/O2 Discharges, PhD Thesis, 1985.
	www.chm.bris.ac.uk /~paulmay/etching/publist1.htm (521 words)

	Proposal
		Etching processes are essential to the fabrication of microelectronic semiconductor devices, in that etching is the process in which material is selectively removed from the wafer to form the device structure and/or circuit pattern of the device.
		Basically, wet etching involves the immersion of the wafer in the etchant solution, whereas in dry etching the wafer is processed in gaseous etchants in a plasma environment.
		Because the ions are accelerated in the direction of the field, the physical component of etching is extremely directional (anisotropic), and the etching direction is, for the most part, normal to the surface of the wafer(s) (due to the directionality of the local field at the wafer surface).
	filebox.vt.edu /a/asignor/Proposal.htm (1460 words)

	Dielectric Dry Etching Plasma
		Plasma processing (dry etching) on the other hand is...
		on gate-conductor plasma etching development and the evaluation of the dry etching...
		Discharges Photoelectrochemical Etching of InxGa1-xN Plasma Etching of...
	www.1st-crafts.com /83/dielectric-dry-etching-plasma.html (507 words)

	MIJ-NSR Vol. 4S1, Art. G10.6, J.T. Hsieh et al. (Site not responding. Last check: 2007-10-14)
		Damage-free etching of GaN by Cl, assisted by an ArF (193 nm) excimer laser, is demonstrated.
		AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm.
		As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.
	nsr.mij.mrs.org /4S1/G10.6 (157 words)

	IBM Journal of Research and Development: Fabrication of magnetic recording heads and dry etching of head materials
		The processes include broadbeam ion etching, the primary dry-etching method used in recording-head manufacturing, and reactive ion etching, a promising process technique for future recording-head fabrication.
		Aspects that are reviewed include broadbeam ion etching, the primary dry-etching method in recording-head manufacturing, and reactive ion etching, a promising processing technique for future recording-head fabrication.
		After wafer-level processing, in contrast to integratedcircuit fabrication, where chips are obtained by a dicing process, recording-head fabrication relies on many additional complicated processes, such as precise lapping, subsequent thin-film deposition, photolithography, and dry etching, to produce completed recording heads.
	www.findarticles.com /p/articles/mi_qa3751/is_199901/ai_n8829691 (1355 words)

	Fabrication of magnetic recording heads and dry etching of head materials - References
		P. Gulden and C. Scholz, "Method for Structuring a Copper and Permalloy Layer by Means of Dry Etching," U.S. Patent 4,838,994, June 13, 1989.
		W. Van Den Hoek, "The Etch Mechanism for Al in Fluorine and Chlorine Based RF Dry Etch Plasmas," Mater.
		A. Picard and G. Turban, "Plasma Etching of Refractory Metals (W, Mo, Ta) and Silicon in SF and SF Plasma Chem.
	www.research.ibm.com /journal/rd/431/hsiaoref.html (1158 words)

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