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Topic: Electron mobility

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	Electron mobility - Wikipedia, the free encyclopedia
		In physics, electron mobility (or simply, mobility), is used to describe the relation between drift velocity of electrons or holes in a solid material or electrons/ions in a gas, and an applied electric field.
		Mobility is also different for electrons and holes in a semiconductor.
		Mobility is related to the species' diffusion coefficient D through an exact (thermodynamicly required) equation known as the Einstein relation:
	en.wikipedia.org /wiki/Electron_mobility (365 words)

	Mobility - Wikipedia, the free encyclopedia
		Mobility is the ability and willingness to move or change; this can depend on motor skills; mobility aids may be needed such as a walking stick, walker, mobile standing frame or wheelchair or white cane for visual impairment.
		Mobility with regard to one's home depends on availability of houses and being bound to an area because of a job or school, etc. Mobility with regard to one's job depends on availability of jobs (depending on the general job market and on one's versatility, quality, etc.), mobility with regard to one's home, etc.
		Apprentices mobility refers to students and teachers in VET moving to another institution inside or outside their own country to study or teach for a limited time.
	en.wikipedia.org /wiki/Mobility (349 words)

	Electron mobility 4.4.2
		When an electric field is applied the electrons steadily drift in the field direction and because they lose only a small fraction of their energy in elastic collisions with gas atoms or molecules they rapidly gain energy until they start to undergo inelastic collisions.
		Electrons can be removed either by electron attachment to form negative ions, which because of their mass are effectively immobile compared to electrons or by recombination with a positive ion.
		Electrons can be characterized by their drift velocity, diffusion coefficient and by their ability to cause excitation or ionization of the gas atoms with which they collide.
	www.kayelaby.npl.co.uk /atomic_and_nuclear_physics/4_4/4_4_2.html (428 words)

	Radio-Electronics.Com :: High Electron Mobility Transistor (HEMT)
		The High Electron Mobility Transistor or HEMT is a form of field effect transistor (FET) that is used to provide very high levels of performance at microwave frequencies.
		Gallium arsenide is generally used because it provides a high level of basic electron mobility and this is crucial to the operation of the device.
		A bias applied to the gate formed as a schottky barrier diode is used to modulate the number of electrons in the channel formed from the 2 D electron gas and in turn this controls the conductivity of the device.
	www.radio-electronics.com /info/data/semicond/hemt/hemt.php (881 words)

	U.S. Patent: 5668387 - Relaxed channel high electron mobility transistor - September 16, 1997
		As electrons are scattered to higher energy levels during operation of the HEMT at high bias, the probability of the electrons being scattered into surrounding layers defining the InGaAs channel increases.
		The resulting electron transport in the surrounding layers outside of the InGaAs channel layer yields parallel transport paths that degrade device performance as a result of lower efficiency, lower transconductance, and lower overall RF performance.
		Because the electrons travel at low energies within the well, the probability of the electrons on the channel layer being scattered into the surrounding buffer or donor layers is reduced.
	www.everypatent.com /comp/pat5668387.html (3515 words)

	Electron band mobility in Bismuth Silicon Oxyde (BSO, B12SiO20)
		An electron in a polar crystal polarizes the lattice in its neighbourhood.
		Therefore, we determine the electron mobility using the holographic time of flight (HTOF) method [9,11,12,13,14], in which two interfering laser beams excite a spatially sinusoidal pattern of charge carriers in the bulk of the sample.
		The observed decrease of the mobility with rising temperature and the polar nature of the n-BSO lattice suggest that the band mobility is controlled by interaction with longitudinal optical (LO) phonons [4,5,6,7].
	www.lehigh.edu /~ivb2/mobBSO.html (2583 words)

	DAMOCLES: Effective electron mobility in Si inversion layers
		Since carrier mobilities depend not only on the shear, but also on the dilatation deformation potentials, there is actually a way to extract the troublesome dilatation deformation potentials from the experimental mobility.
		Herring and Vogt[12] had already followed this strategy in 1956: They had computed the electron mobility as a function of the ratio of the dilatation and shear deformation potentials in the conduction band.
		Electron mobility in Si under strain along the [001] direction, calculated using intervalley deformation potentials from Ref. [16] (blue) and Ref. [17] (red).
	www.research.ibm.com /DAMOCLES/html_files/mueff.html (3081 words)

	Electron Mobility in SiGe Heterostructures. (Site not responding. Last check: 2007-10-29)
		The low-temperature electron mobility in strained Si layers grown on relaxed Si_1-xGe_x buffers has improved dramatically in the past three years.
		Mobilities up to 50 m^2/V s were achieved in gated samples.
		In new calculations for x=0.25 we obtain an electron concentration of 2 \times 10^11 cm^-2 and a mobility at 1 K of 170 m^2/V s for an ungated sample with a 40 nm spacer, assuming only Coulomb scattering from the remote ionized donors and from 10^14 background acceptors per cm^3.
	flux.aps.org /meetings/BAPSMAR95/abs/SF1416.html (143 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		The electron energy distribution function and the corresponding plasma parameters are studied numerically in a decaying Ar-NF{sub 3} plasma in the presence of an external electric field.
		In this case, a so-called inverse distribution function forms and the electron mobility (the electron drift velocity) rapidly decreases and becomes negative.
		The possibility of experimental observation of negative electron mobility in a decaying plasma is discussed.
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=20419417 (308 words)

	NSM Archive - Silicon Carbide (SiC) - Mobility and Hall Effect
		Mobilities in other polytypes are of the same order of magnitude, see Electron and hole mobility vs. temperature
		Electron Hall mobility vs. temperature for different doping levels and different levels of compensation.
		Electron Hall mobility of 3 expitaxial layers on Si vs. temperature.
	www.ioffe.rssi.ru /SVA/NSM/Semicond/SiC/hall.html (139 words)

	Semiconductor OneSource: Semiconductor Glossary -- Search For : electron mobility
		measure of electron scattering in semiconductor; proportionality factor between electron drift velocity and electric field as well as between carrier concentration and conductivity of semiconductor; unit cm
		parameter which is a measure of hole scattering in a semiconductor; proportionality factor between hole drift velocity and electric field as well as conductivity and hole concentration in semiconductor; due to its higher effective mass, hole mobility is typically significantly lower than electron mobility.
		process responsible for electron in a certain state, defined by its crystal momentum, suddenly moving into a different state; result of interactions with host atoms in the lattice, dopant atoms, as well defects; fundamental effect defining electron transport in semiconductor.
	semiconductorglossary.com /default.asp?searchterm=electron+mobility (282 words)

	Electrical properties of Indium Antimonide (InSb)
		Electron Hall mobility versus temperature for different doping levels and different compensation ratios
		Solid line is theoretical calculation for electron-drift mobility.
		Field dependence of the electron drift velocity, 77 K. Solid lines is the Monte Carlo calculation.
	www.ioffe.rssi.ru /SVA/NSM/Semicond/InSb/electric.html (194 words)

	Transistors, Pseudomorphic High Electron Mobility - Worldwide (Site not responding. Last check: 2007-10-29)
		If you own excess electronic components and are interested in selling or consigning your stock to EMI to sell, please contact us.
		We are specialists in power factor capacitors, power factor correction, motor capacitors and obsolete electronic components and hold the largest stock in Europe of Ducati energia capacitors, Cogema chokes and coils, Sensortechnics pressure sensors and transducers, and a number of energy management devices and control relays and panel meters.
		Hale specialise in sourcing difficult to obtain and obsolete electronic components.
	www.kellysearch.com /qz-product-96883.html (517 words)

	Electron Mobility Enhancement in Heavily Doped GaAs:C HBTs (Site not responding. Last check: 2007-10-29)
		The mobility and lifetime of minority electrons in the heavily doped base of heterojunction bipolar transistors (HBTs) are key parameters for device design and analysis.
		Free hole concentrations, Hall mobilities and base sheet resistances were assessed using van der Pauw samples fabricated directly adjacent to each HBT device measured, to avoid errors from the variation in doping across the wafer.
		The mobilities are compared in the figure with recent measurements and theoretical studies for heavily doped p
	www.shef.ac.uk /eee/nc35t/newsletter/old/elec-4.html (351 words)

	Re: VRD - electron mobility of silicon
		In this case, the mobility is limited pretty much by scattering off the lattice of the crystal itself.
		What this means is that the crystal's structure and electronic properties determine the speeds at which carriers can move through it.
		We call the ratio of the velocity to the field (cm/sec divided by volt/cm is cm2/volt-sec, the units of mobility) the mobility.
	www.madsci.org /posts/archives/2000-04/956621415.Ph.r.html (422 words)

	Geek.com Geek News - Carbon nanotubes shown to have unprecedented electron mobility
		University of Maryland researchers in College Park, Maryland, have discovered that carbon nanotube transistors may have unprecedented mobility.
		Back in 1955, researchers discovered that indium antimonide had a room temperature electron mobility of 77,000 centimeters per volt-second, far above silicon's 1,500 centimeters per volt-second.
		Carbon nanotubes, however, have a mobility of 100,000 centimeters per volt-second at room temperature.
	www.geek.com /news/geeknews/2003Dec/bch20031204022941.htm (1251 words)

	A Physically-Based Electron Mobility Model for Strained Si Devices
		A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented.
		The dependence of the electron mobility components on the orientation of the underlying SiGe layer is taken into account by performing a transformation of the strain tensor from the interface coordinate system to the principle coordinate system.
		In order to validate the model, Monte Carlo simulations were performed and the results obtained have been fit to experimental data which are available mainly in the form of piezo-resistance coefficients.
	www.nsti.org /Nanotech2005/showabstract.html?absno=135 (176 words)

	How mobility of electron will.....
		that's why n-type devices are having faster operating performances comparitively than p-type devices.coz holes having lesser mobility than electrons due to weight.and now even more faster operating speeds are acheiving with electrons than before by varying the spin of the electrons.
		Posted : 7/5/2004 2:50:32 AM Mobility is THE factor affecting operational characteristics of any junction device.
		Posted : 9/18/2004 8:54:31 AM mobility is the average speed of electron in semiconductor,so when avg speed of electron slows so speed of device goes down
	www.vlsibank.com /sessionspage.asp?titl_id=786 (222 words)

	electron mobility - Storming Media
		Using Electrons on a Helium Film as Qubits Date: 30 JUN 2005
		Mobility and Transverse Electric Field Effects in Channel Conduction of Wrap-Around-Gate Nanowire MOSFETs Date: 2004
		Low-Dimension Electronic Precesses in High Mobility GaAs/Al(x) Ga(1-x)As Nanostructures Date: JAN 1998
	www.stormingmedia.us /keywords/electron_mobility.html (584 words)

	mobility of electron
		Date Posted : 6/17/2004 12:01:02 AM Why mobility of electron is 3 times that of
		Posted : 9/15/2004 8:30:06 AM because the effective mass of the electron is about one third of hole...
		its calculation is simple....they apply some force on electron and see its acceleration....then m=f/a....newtons 2nd law comes into pic...
	www.vlsibank.com /sessionspage.asp?titl_id=699 (113 words)

	Electron mobility in InP
		Theoretical values of weak-field Hall mobility and Hall ratio of electrons in InP at 77K and 300K are presented for different impurity concentrations and compensation ratios.
		Calculations were done by an iterative method taking into account all the complexities of the band structure and the electron scattering mechanisms and using the most recent values of the physical constants.
		Calculated values are in close agreement with the recent experimental results.
	stacks.iop.org /0022-3719/11/119 (201 words)

	Properties of gallium arsenide, 3rd edition - The IET
		2.3 - Electron mobility in LPE GaAs D.
		2.4 - Electron mobility in VPE and MOVPE GaAs D.
		2.5 - Electron mobility in MBE GaAs D.
	www.iee.org /Publish/Books/EMIS/em016c.cfm?PrintVersion=true (1512 words)

	Properties of Gallium Arsenide (3rd Edition)
		2.1 Electron Mobility in GaAs: Overview D. Lance Field
		2.4 Electron Mobility in VPE and MOVPE GaAs
		3.1 Hole Mobility in Doped and Ion Implanted GaAs
	www.knovel.com /knovel2/Toc.jsp?BookID=1130&VerticalID=0 (583 words)

	AMS Acta - AlGaN/GaN high electron mobility transistor (HEMT) reliability
		AMS Acta - AlGaN/GaN high electron mobility transistor (HEMT) reliability
		Pavlidis, Dimitris e Valizadeh, Pouya e Hsu, S. AlGaN/GaN high electron mobility transistor (HEMT) reliability.
		Documento PDF - Necessita di Adobe Acrobat Reader o di una altro applicativo per la visualizzazione di file PDF.
	amsacta.cib.unibo.it /archive/00001478 (359 words)

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