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Topic: Epitaxy

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Molecular beam epitaxy

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Herbert Kroemer

Zhores Ivanovich Alferov

	Molecular beam epitaxy - Wikipedia, the free encyclopedia
		Molecular beam epitaxy, abbreviated MBE, is the deposition of one or more pure materials onto a single crystal wafer, one layer of atoms at a time, under ultra-high vacuum, forming a perfect crystal.
		In solid-source MBE, ultra-pure elements such as gallium and arsenic are heated in separate furnaces until they each slowly begin to evaporate.
		Molecular beam epitaxy is also used for the deposition of some types of organic semiconductors.
	en.wikipedia.org /wiki/Molecular_beam_epitaxy (366 words)

	IMPLANTATION & EPITAXY DEPOSITION MARKETS POISED TO GROW (Site not responding. Last check: 2007-09-07)
		mplantation and epitaxy deposition systems have experienced significant growth in recent years and are projected to sustain that growth through the turn of the century as more sophisticated manufacturing and fabrication techniques and miniaturized products have broadened the demand for implanted and vapor deposited materials.
		Implantation and epitaxy equipment, services, and materials (including plasma thermal, and ion) stand to benefit from a variety of new products which will require properties that can best be delivered by implanting or vacuum-depositing thin films on a wide range of surfaces.
		The value of worldwide shipments of implantation and epitaxy equipment reached $1.4 billion in 1995 and is forecast to reach $2.4 billion by 2000, an average annual growth rate of 11.7%.
	www.bccresearch.com /editors/RGB-186C.html (378 words)

	Semiconductors: Gallium Arsenide: Epitaxy: Introduction (Site not responding. Last check: 2007-09-07)
		Epitaxy is the process of growing thin films of crystals, in which the substrate determines the crystallinity and orientation of the grown layer.
		VPE uses a heated stream of gaseous elements or compounds that interact at the surface of the substrate to form the crystalline layer.
		In addition to VPE and LPE, vacuum epitaxy in the form of molecular beam epitaxy (MBE) has developed as an extraordinarily versatile technique.
	www.osha.gov /SLTC/semiconductors/gaasepitaxy/introduction.html (383 words)

	LPE - Epitaxy
		The purpose of epitaxy is to grow a silicon layer of uniform thickness and accurately controlled electrical properties and so to provide a perfect substrate for the subsequent device processing.
		The core of an epitaxial (epi) reactor is the reaction chamber, typically made of quartz.
		In a barrel reactor, the wafers are held by a heated prismatic susceptor contained in a quartz bell that is externally cooled.
	www.lpe-epi.com /epitaxy.aspx?sm=ept (500 words)

	Molecular beam epitaxy -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-09-07)
		The evaporated elements (although strictly speaking the arsenic in this case is actually in a molecular form) condense on the wafer, where they react with each other, forming, in this case, (Click link for more info and facts about gallium arsenide) gallium arsenide.
		The wafers on which the crystals are grown are mounted on a rotating platter which can be heated to several hundred degrees (The 3rd letter of the Roman alphabet) C during operation.
		Molecular beam epitaxy is also used for the deposition of some types of (Click link for more info and facts about organic semiconductors) organic semiconductors.
	www.absoluteastronomy.com /encyclopedia/m/mo/molecular_beam_epitaxy.htm (335 words)

	Amazon.com: Epitaxy: Physical Foundation and Technical Implementation: Books: Marian A. Herman,Wolfgang Richter,Helmut ... (Site not responding. Last check: 2007-09-07)
		Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework.
		It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy.
		Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization.
	www.amazon.com /exec/obidos/tg/detail/-/3540678212?v=glance (489 words)

	GB-186C Thin Layer Deposition: Highlighting Implantation and Epitaxy, Plasma, Thermal, Ion (Site not responding. Last check: 2007-09-07)
		BCC's goal in conducting this study was to determine the current status of the market for implantation and epitaxy equipment (including plasma, thermal and ion), services and materials and assess the growth potential over a five-year period from 1995 to 2000.
		The materials deposited by implantation and epitaxy are analyzed by their basic functions such as wear-resistance, thermal control and lubricity.
		Included were manufacturers of implantation, epitaxy and related equipment and materials, service providers, industrial and consumer product manufacturing companies, and various end users of the implantation and deposition process.
	www.bccresearch.com /advmat/GB186C.html (1438 words)

	The role of molecular beam epitaxy in research on giant magnetoresistance and interlayer exchange coupling
		In the late 1970s MBE was applied to metal epitaxy, magnetic metal epitaxy, and eventually, in 1986 [2], to preparation of high-structural-quality, epitaxial magnetic rare-earth superlattices.
		The first high-perfection epitaxial magnetic superlattices were prepared in 1986, using MBE [2].
		Moreover, the magnetoresistance was oscillatory and its magnitude comparable with that in epitaxial structures (e.g., in Fe/Cr multilayers) prepared by MBE [6].
	www.research.ibm.com /journal/rd/421/farrow.html (4654 words)

	Epitaxy
		Epitaxy has also recently been used in CMOS VLSI circuits.
		The disadvantages of epitaxy include higher cost of wafer fabrication, additional process complexities, and problems associated with defects in the epi layer.
		The chemical vapor deposition of silicon epitaxy is usually achieved using an
	www.semiconfareast.com /epitaxy.htm (206 words)

	LayTec - optical sensors for epitaxy (Site not responding. Last check: 2007-09-07)
		As a leader in the field of in-situ epitaxy sensors, LayTec offers a wide range of real-time monitoring tools for MOCVD, MBE and other thin-film processes.
		Our sophisticated real-time monitoring tools measure epitaxy growth properties such as growth rate, layer thickness, doping levels, ternary material composition, and wafer surface temperature with extreme precision — already during the MOCVD or MBE process.
		The enhanced knowledge of the epitaxy growth process achieved through in-situ monitoring dramatically reduces development cycles and enables superior methods of quality control in MOCVD or MBE mass production.
	www.laytec.de (139 words)

	JEM Abstracts: November 1995 (Site not responding. Last check: 2007-09-07)
		The 7th Biennial Workshop on Organometallic Vapor Phase Epitaxy was held at Sanibel Harbour Resort, Ft. Myers, FL on April 2-6, 1995.
		The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied.
		This paper compares lifetime measurements on epitaxially grown CMT layers which have been isothermally annealed to minimize the vacancy concentration and are n-type due to native defects, residual impurities, or deliberately added dopants.
	www.tms.org /pubs/journals/JEM/9511/abstracts-9511.html (7914 words)

	OPUS - Low temperature silicon epitaxy - Defects and electronic properties
		The work investigates the electronic properties of thin epitaxial silicon films and their suitability for microelectronic and photovoltaic applications.
		The films are grown by ion-assisted deposition (IAD), a molecular beam epitaxy (MBE) method that uses a small fraction of accelerated Si+ ions in the molecular beam, allowing for additional kinetic energy transfer to the substrate during low temperature epitaxy.
		This work gives a detailed analysis of defects in low temperature epitaxial films with their dependence on deposition temperature, deposition rate, and substrate orientation, allowing for a profound judgement of the possibilities and restrictions of low temperature epitaxial films for photovoltaic and microelectronic applications.
	elib.uni-stuttgart.de /opus/volltexte/2003/1483 (1385 words)

	PRESS RELEASE CSD Epitaxy Ltd Announces System Order From Cemat Silicon S.A. (Site not responding. Last check: 2007-09-07)
		In related news, CSD Epitaxy announced that the company has reached an agreement for representation in China.
		CSD Epitaxy Ltd is a leading global supplier of epitaxy processing equipment and technical support services.
		About Cemat Silicon S.A. Cemat Silicon S.A. is a supplier of advanced epitaxial silicon wafers used in the fabrication of discrete semiconductor devices used in consumer electronics.
	www.marketwire.com /mw/release_html_b1?release_id=60222 (313 words)

	epitaxy -- Encyclopædia Britannica (Site not responding. Last check: 2007-09-07)
		The process does not involve a chemical reaction between the two materials, but the crystalline structure and orientation of the substance determines how the epitaxial layer is deposited.
		Advanced ceramics intended for electromagnetic and mechanical applications are often produced as thin or thick films.
		These thin layers, grown atop bulk semiconductor wafers, are called epitaxial layers because their crystallinity matches that of the substrate even though the composition of the materials may differ—e.g., gallium aluminum arsenide...
	www.britannica.com /eb/article-9032820?tocId=9032820 (339 words)

	Metallorganic Vapor Phase Epitaxy Yields InSb Photodiodes for Focal Plane Arrays - September, 2004 (Site not responding. Last check: 2007-09-07)
		Molecular beam epitaxy is a versatile technique that uses elemental sources, but growth takes place under ultrahigh-vacuum conditions.
		Metallorganic vapor phase epitaxy requires less extreme conditions, making it easier and faster to reload and resume growth in a reactor, but its molecular precursors are more difficult to produce.
		The measured current-voltage characteristics at 77 K indicated that the diodes grown by metallorganic vapor phase epitaxy are as good as those grown by molecular beam epitaxy.
	www.photonics.com /spectra/tech/XQ/ASP/techid.1651/QX/read.htm (490 words)

	Epitaxy-on-Electronics Optoelectronic Integration
		The epitaxial heterostructures are subsequently processed to create the intended optoelectronic devices and to monolithically interconnect them with the pre-existing electronics, which completes the process.
		Another restriction of conventional molecular beam epitaxy is the initial surface preparation step which typically involves a brief cycle to 600¡C or higher to desorb any oxide layer on the substrate surface.
		One of the elegant features of the epi-on-electronics process is that the upper surface of the epitaxial heterostructure can be designed to be coplanar with the top of the dielectric layer stack covering the wafer so that the overall wafer surface is largely planar.
	web.mit.edu /fonstad/optochip/e-on-e.html (1409 words)

	References in Journal of Crystal Growth (Site not responding. Last check: 2007-09-07)
		Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates
		Kinetics of the epitaxial growth of GaN using Ga, HCl and NH Growth and morphology of GaN
		GaN epitaxial growth on sapphire (0001): the role of the substrate nitridation
	nsr.mij.mrs.org /refs/jcg (1853 words)

	Semiconductors: Gallium Arsenide: Epitaxy: Reactor Load and Unload (Site not responding. Last check: 2007-09-07)
		The primary technique in use for VPE in LED processing is the III-halogen and V-hydrogen system.
		It involves a two-cycle process; first, growing the epitaxial layer of GaAsP on the GaAs substrate, next, an etch cycle to clean the quartz reactor chamber of impurities.
		During the epitaxial growth cycle, the pre-cleansed GaAs wafers are loaded into a vertical quartz reactor chamber containing an upper reservoir of elemental liquid gallium over which anhydrous HCl gas is metered, forming GaCl
	www.osha.gov /SLTC/semiconductors/gaasepitaxy/reactorloadunload.html (388 words)

	Solid-State Lighting Issue 11: Scientific Literature (Mid-October 2001 — Early February 2002)
		University of California - Santa Barbara. "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates.
		University of Utah. "Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth." RT Lee et al in Journal of Crystal Growth; 2001; 233(3):490-502.
		University of Wisconsin. "Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy.
	lighting.sandia.gov /Xlightingscielit11.htm (8362 words)

	444.htm
		Monolayer epitaxy of a triangular molecule on graphite
		Epitaxial growth ofAJN and GaN on Si(l 1 1) by plasma-assisted molecular beam epitaxy
		Molecular-beam epitaxy of InAs on anodized GaAs substrates
	www.iut.ac.ir /library/444.htm (13070 words)

	Thin Layer Deposition: Highlighting Ion Implantation and Epitaxy
		Ion implantation and molecular beam epitaxy (MBE) are critical technologies in semiconductor manufacturing.
		Ion implantation and molecular beam epitaxy (MBE) are two of the critical deposition technologies used in semiconductor manufacturing.
		A previous BCC report, GB-186C, entitled, Thin Layer Deposition: Highlighting Implantation and Epitaxy, Plasma, Thermal and Ion, was published in October 1996.
	www.marketresearch.com /researchindex/764139.html (1013 words)

	Semiconductor International - Epitaxy Challenges for Strained Silicon in SOI Integration - 3/1/2005 - Semiconductor ... (Site not responding. Last check: 2007-09-07)
		Because of cost and technical limitations of the conventional feature size reduction approach, the search for alternative ways to enhance device performance has increased considerably during the past decade.
		New materials, new substrates and new device architectures are now prime and favored candidates to realize such improvements, and epitaxy is playing a key role as an enabling manufact...
		Use of this web site is subject to its Terms and Conditions of Use.
	www.reed-electronics.com /semiconductor/article/CA507185 (187 words)

	Institute for Microstructural Sciences: Epitaxy
		The Epitaxial and Multilayer Materials Group carries out research and development activities in the areas of epitaxial growth and characterization of advanced semiconductors.
		The Epitaxial and Multilayer Materials Group operates the various semiconductor epitaxial growth facilities in the Institute.
		These include one molecular beam epitaxy (MBE) system for GaAs-based III-V semiconductors; one multi-group V MBE system for arsenides, dilute nitrides and antimonides, a chemical beam epitaxy (CBE) system for InPand GaAs-based semiconductors, commercial and custom built ammonia-MBE systems for growth of GaN.
	ims-ism.nrc-cnrc.gc.ca /ep/epitaxy_e.html (379 words)

	[No title] (Site not responding. Last check: 2007-09-07)
		D.G. Schlom, "Epitaxial Growth of High Temperature Superconductors from the Gas Phase," in: International Workshop on Superconductivity Co-Sponsored by ISTEC and MRS: Controlled Growth of Single- and Poly-Crystals of High Temperature Superconductors (ISTEC/MRS, Honolulu, 1992), pp.
		Gerber, and J. Mannhart, "Epitaxial Growth of Cuprate Superconductors from the Gas Phase," Journal of Crystal Growth 137 (1994) 259-267.
		D.G. Schlom, "Epitaxial Growth of High Temperature Superconductors from the Gas Phase," presented at the International Workshop on Superconductivity Co-Sponsored by ISTEC and MRS: Controlled Growth of Single- and Poly-Crystals of High Temperature Superconductors in Honolulu, Hawaii (1992).
	www.ems.psu.edu /~schlom/Publications.html (7799 words)

	A Simplified Model Describing Enhanced Growth Rates During Vapor Phase Selective Epitaxy -- from Mathematica ...
		Nonuniform and enhanced growth rates due to gas-phase diffusion are calculated for vapor phase selective epitaxy.
		By solving Laplace's equation above a partially masked growth substrate, the effects of gas phase diffusion on vapor phase selective epitaxy are considered.
		Closed form expressions are given for reactant concentrations and enhanced growth rates away from the edge of a large single masking stripe, and similar calculations are made for the case of repetitive masking stripes.
	library.wolfram.com /infocenter/Articles/2992 (149 words)

	CSD Epitaxy (Site not responding. Last check: 2007-09-07)
		Despite the increasing incorporation of technology into our daily lives the basic economics remains the same for wafer manufacturers and epitaxial wafer producers who are under increasing market pressure to balance the growing demand for state-of-the-art manufacturing technology with the need for return on investment.
		CSD Epitaxy CSD Epitaxy is a recognized leader in the support of the large installed base of Gemini and EpiPro production systems worldwide.
		The staff and local representatives of CSD Epitaxy share the customer´s commitment to succeed in business and share the desire to employ the best available technology to produce faster, better, and lower cost devices.
	csd-epi.com (197 words)

	ots.at: CSD Epitaxy Ltd Announces System Order From Cemat Silicon S.A.
		CSD Epitaxy Ltd Announces System Order From Cemat Silicon S.A. Morgan Hill, CA (OTS) - CSD Epitaxy Inc (CSD Epitaxy), a global provider of epitaxial processing equipment, announced the delivery of an EpiPro(TM) production system to Cemat Silicon S.A., a supplier of silicon epitaxial wafers used by semiconductor manufacturers.
		About CSD Epitaxy CSD Epitaxy Ltd is a leading global supplier of epitaxy processing equipment and technical support services.
		For more information, contact CSD Epitaxy Inc. About Cemat Silicon S.A. Cemat Silicon S.A. is a supplier of advanced epitaxial silicon wafers used in the fabrication of discrete semiconductor devices used in consumer electronics.
	www.ots.at /meldung.php?schluessel=OTS_20031119_OTS0023 (352 words)

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