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Term Papers 2000, Term papers, 070922 An analysis of the theory and uses of quantum tunneling, specifically the Esaki diode. The diode circuits have been developed and crash programs have been implemented by major computer makers in order to apply it to communications equipment. But interest in the diode is so great that they are being forced to try to apply this not-so-new technology to obtain ultra-high speed and ultra-low power consumption in the computer industry. www.termpapers2000.com /lib/essay/54.html   (3771 words)

Sony Global - Sony History Leona Esaki was called in from the Research Department to lend assistance, while Yuriko Kurose and Takashi Suzuki, a college student and trainee at Sony respectively, assisted in taking the measurements. Esaki's next task was to determine the cause of the negative resistance which was represented by the peak in the graph. Esaki speculated that this phenomenon might be the "forward bias tunneling effect. www.sony.net /Fun/SH/1-7/h5.html   (642 words)

Leo Esaki Leo Esaki (江崎 玲於奈; correct transcription Esaki Reona; also known as Esaki Leona) (born March 12, 1925) is a Japanese physicist who shared the Nobel Prize in Physics in 1973 with Ivar Giaever and Brian David Josephson for his discovery of the phenomenon of electron tunneling. He is known for his invention of the Esaki diode, which exploited that phenomenon. He moved to the United States in 1960 and joined the IBM T. Watson Research Center, where he became an IBM Fellow in 1967. www.mlahanas.de /Physics/Bios/LeoEsaki.html   (220 words)

Active solid-state devices (e.g., transistors, solid-state diodes) - PatentStorm   (Site not responding. Last check: 2007-10-25) Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode) With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.) Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes) www.patentstorm.us /class/257-Active_solid_state_devices_(e_g_,_transistors,_solid_state_diodes).html   (1917 words)

Dr. Eberl MBE-Komponenten GmbH - P doping source DECO-D The figure on the right shows an I-U characteristic with a record high peak-to-valley current ratio of a Si/SiGe Esaki diode. On the last figure a SIMS profile of a sharp p-n junction in a Si/SiGe/Si Esaki diode decice is presented. The structure was grown at the Max-Planck-Institute for Solid State Research in Stuttgart, in the group of Dr. O. www.mbe-components.com /products/dopant/deco-d.html   (780 words)

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