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Topic: FeRAM

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		Fabricated with 130-nanometer CMOS process technology, the 64-megabit FeRAM is based on Toshiba’s chainFeRAMTM architecture, which significantly reduces memory cell size.
		FeRAM combines the fast operating characteristics of DRAM and SRAM with flash memory’s ability to retain data while powered off, characteristics that continue to attract semiconductor industry attention.
		The 64-megabit FeRAM employs a new wiring design in which neighboring wirings operate in sequence; one is off when the other is on.
	www.toshiba.com /taec/news/press_releases/2006/corp_06_309.jsp (438 words)

	Feram memory design using rom array architecture invention (Site not responding. Last check: 2007-10-15)
		The FeRAM array includes a memory array that has a plurality of segmented BL/PL arrays, and each segmented BL/PL array defines an I/O. A plurality of charge transfer sense amplifiers is further provided.
		FeRAM cells have an advantage in that they have an operating speed similar to that of DRAMs while exhibiting reduced power consumption.
		Specifically, conventional DRAM or FeRAM use a latch SA that is directly coupled to the bitline.
	www.freshpatents.com /Feram-memory-design-using-rom-array-architecture-dt20060105ptan20060002169.php (1850 words)

	Fujitsu and Tokyo Institute of Technology Announce the Development of New Material for 256Mbit FeRAM Using 65-nanometer ...
		New FeRAMs can be produced with Fujitsu’s 65nm process technology using the BFO-based material in a device structure similar to the one used to build FeRAMs using 180nm technology.
		FeRAMs built using 65nm technology can be produced using Mn-doped BFO, with the similar device structure of the FeRAM being produced using 180nm technology.
		FeRAMs also can be used in electronic paper devices, which let users browse and read a large volume of information traditionally written on plain paper.
	www.fujitsu.com /cn/fmc/en/news/archives/2006/0808.html (849 words)

	iXBT: Память FeRAM - специальные термины и принципы работы
		FeRAM - это память не только мобильных телефонов и персональных компьютеров, это память исследователей космоса, память, которая сделает реальными далекие космические экспедиции (дальше околоземной орбиты :-).
		FeRAM прекрасно зарекомендовала себя в таких условиях, что открывает неизведанные горизонты для использования этой технологии.
		Фирмы NEC и Fujitsu, занимающиеся разработками встраиваемой FeRAM для процессоров и микроконтроллеров по процессу 2T/2C, достигли не таких значительных успехов на пути увеличения объема памяти, как фирмы Infineon и Toshiba.
	www.ixbt.com /mainboard/feram-tech.shtml (1463 words)

	Feram's Leech
		Far away and deep in his mountain hold, Feram's powerful magic was such that he was able to capture the first of the broken-tusked beasts that dared to venture forth from the deep tunnels in the mountains.
		With each kill, whomever held Feram's Leech would grow madder with bloodlust until, bereft of opponents, the wielder would turn the Leech upon themselves so that the gushing, coppery ecstasy of liquid life would continue to flow and the Leech could pass to a new servant.
		Fearing that Feram had regained his terrible weapon and would use it for his own twisted purposes, the armies of men stormed Feram's mountain fortress and finally overcame him in his deepest chamber, where the terrible weapon had been forged.
	www.xenobuzz.com /MyLegoCreations/Feram's%20Leech.htm (1395 words)

	Spartanburg SC \| GoUpstate.com \| Spartanburg Herald-Journal (Site not responding. Last check: 2007-10-15)
		FeRAM is currently one of several "advanced" non-volatile memory (NVRAM) technologies that are attempting to gain acceptance as an alternative to flash by avoiding its key weaknesses – high program and erase voltages, slow programming speed, write-erase endurance that is limited to ~10
		FeRAM is based on the physical movement of atoms in response to an external field, which happens to be extremely fast, settling in about 1 ns.
		The density of FeRAM arrays should be increased by improvements in FeRAM processing technology and cell structures, such as the development of vertical capacitor structures (in the same way that DRAM cells use vertical cell structures to reduce the area of the cell footprint while maintaining a sufficiently strong data signal from the cell).
	www.goupstate.com /apps/pbcs.dll/section?category=NEWS&template=wiki&text=FeRAM (2469 words)

	IT News Online > Asia - Hardware - Toshiba Unveils Fastest, Highest Density FeRAM, Builds MRAM with NEC
		FeRAM combines the fast operating characteristics of DRAM and SRAM with flash memory's ability to retain data while powered off.
		Toshiba expects FeRAM to be used in a wide range of applications, including high-performance mobile digital equipment and computers.
		The 64 Mb FeRAM uses a new wiring design in which neighboring wirings operate in sequence; one is off when the other is on.
	www.itnewsonline.com /showstory.php?storyid=2710&scatid=3&contid=2 (544 words)

	FERAM - FErroelectric Random Access Memory
		FERAM is a acronym that can contains many meanings which are listed below.
		There may be many popular meanings for FERAM with the most popular definition being that of FErroelectric Random Access Memory
		If you have more information or know of another definition for FERAM, please let us know so that we can review it and add that information to our database.
	www.auditmypc.com /acronym/FERAM.asp (169 words)

	Toshiba Develops Highest Density Feram \| LinuxElectrons
		The new chip takes FeRAM storage to the 64-megabit level and pushes read and write speed to 200-megabytes a second, the most advanced combination of performance and density yet achieved.
		FeRAM combines the fast operating characteristics of DRAM and SRAM with flash memory's ability to retain data while powered off, characteristics that continue to attract semiconductor industry attention.
		The 64-megabit FeRAM employs a new wiring design in which neighboring wirings operate in sequence; one is off when the other is on.
	www.linuxelectrons.com /article.php/20060208014818793 (417 words)

	HPCwire Article # 12105
		"FERAM technology will allow us to meet these demands while maintaining the physical size and strength needed in a chip that's carried in pockets and wallets." "This project is another example of our commitment to meeting the future requirements of our customers," he said.
		FERAM technology may be up to this challenge.
		FERAM smartcard chips could have capacities of 64K or 128K compared with the 8K to 16K currently available.
	www.hpcwire.com /hpc-bin/artread.pl?direction=Next&articlenumber=12104 (534 words)

	EETimes.com - Toshiba, Infineon detail plans for 32-Mbit FeRAM
		FeRAM's appeal is in a combination of features that includes the endurance of DRAM, the fast read/write times of SRAM and the non-volatility of flash.
		A major FeRAM breakthrough in recent years was the development of single-transistor, single-capacitor cells, which led to a slew of new products.
		Ramtron International Corp., an FeRAM pioneer, recently announced a 3-volt, 256-kbit part with an endurance specification of at least 10 quadrillion read/write cycles with full data retention.
	www.eetimes.com /story/OEG20010530S0078 (954 words)

	Fujitsu Developed New Material for 65nm 256Mbit FeRAM - Printer Friendly version without Comments
		FeRAM combines the fast operating characteristics of DRAM and SRAM with flash memory's ability to retain data while powered off.
		FeRAM, like MRAM, is a low power, nonvolatile memory design that possesses an array structure allowing for the one-transitor memory cell density of standard DRAM.
		With this increased density, FeRAM applications is expected to expand not only in the security applications, but also in new domains like "Quick-On-Computer," under which a computer can be immediately ready to use after turning on.
	www.cdrinfo.com /Sections/News/Print.aspx?NewsId=17696 (690 words)

	Geek.com Geek News - FeRAM memory chips on the way (Site not responding. Last check: 2007-10-15)
		For you Geeks not in the know, FeRAM is actually a 20-year-old memory technology reintroduced to us at the turn of the millennium after being driven by only a few notable semiconductor manufacturers throughout the '90s.
		FeRAM, like MRAM, is a low power, nonvolatile memory design that possesses an array structure allowing for the one-transitor memory cell density of standard DRAM.
		FeRAM also possesses a high speed read/write access, and this is most likely the primary design motivation in the Matsushita smartSD cards.
	www.geek.com /news/geeknews/2004Sep/bch20041004027237.htm (932 words)

	Development of the 1T FeRAM : Towards the Realization of the Ultra-Gbit Next-Generation Semiconductor Memory
		The commercially available FeRAM that is also on the way of further development has two transistors and two ferroelectric capacitors (2T2C) or one transistor and one ferroelectric capacitor (1T1C) in the one bit memory cell.
		Although this conventional FeRAM is seen as a promising high-capacity memory to replace the DRAM it offers no room for further capacity expansion.
		As a result, we were able to develop the 1T FeRAM by achieving a dense, low-leakage-current stack of the ferroelectric and buffer layer.
	www.aist.go.jp /aist_e/latest_research/2002/20021024/20021024.html (1409 words)

	Emosyn's New Approach to Manufacture FeRAMs
		Because of FeRAM's unique qualities combining the advantages of both DRAM - high speed, high density, low power - and conventional non-volatile memory, "2nd generation" FeRAM technology will target high integration densities similar to DRAMs, such as 64 Mb and higher.
		CVD is capable of coating the sides of memory structures in an FeRAM memory cell, similar to advanced DRAMs.
		Present processing technology is targeting 3 and 5V FeRAM memories, compatibility with future portable applications requires operation at 1.8 or 1V, in order to minimize power usage in hand-held devices.
	www.emosyn.atmi.com /NewFiles/tech2.html (310 words)

	Matsushita Electric (Panasonic) to Ship the World's First 0.18-µm FeRAM-Embedded SoCs \| Headquarters News \| ... (Site not responding. Last check: 2007-10-15)
		The FeRAM offers high-speed writing, low power consumption, and the ability to preserve its contents without electrical power.
		Compared to the conventional FeRAM using the 0.35-µm CMOS process, the new FeRAM-embedded SoCs have larger-capacity memory thanks to its leading edge 0.18-µm technology.
		Compared to Flash Memory or EEPROM (electrically erasable programmable read-only memory), the 0.18-µm FeRAM features higher reliability that is suitable for mobile electronic devices thanks to its five-times faster processing speed, an extended number of write cycles, and complete data retention without battery back-up.
	www.panasonic.co.jp /corp/news/official.data/data.dir/en030709-3/en030709-3.html (454 words)

	Register array having timing reference sensing function, FeRAM using the same, and sensing method using timing ...
		In general, an FeRAM has a data processing speed equivalent to a dynamic random access memory (DRAM), preserves data even when power is off, and thus gains popularity as a next generation memory.
		The FeRAM is a memory having an extremely-similar structure to the DRAM.
		The FeRAM employs a ferroelectric substance to form a capacitor, and thus uses high remanent polarization which is a property of the ferroelectric substance.
	www.uspatentserver.com /686/6865120.html (393 words)

	NE Asia Online2004 Nov : MRAM, FeRAM Offer New Levels of Performance (Site not responding. Last check: 2007-10-15)
		Current FeRAMs still have a large cell size compared to DRAM or Flash, and development of a small and competitive FeRAM cell is therefore the key challenge.
		With the most widely pursued planar FeRAM cell concepts, only structural cell sizes down to ~10F2 are achievable, with F being the minimum feature size of the process.
		In the vertical capacitor FeRAM cell presented by the researchers, the unit cell contains one transistor and one ferroelectric capacitor, which are connected in parallel.
	neasia.nikkeibp.com /neasiaarchivedetail/000619 (643 words)

	cdr.cz: FeRAM předvede i Seiko Epson (diskuze)
		FeRAM (Ferroelectric RAM) je nová generace pamětí, které se vyznačují vysokou rychlostí čtení i zápisu (až 200 MB/s) ale také vydrží desetkrát více zápisů než paměti nyní používané.
		FeRAM (nebo také FRAM podle výrobce) je polovodičová paměť vyrobená speciální technologií a s feromagnetismem to fakt nemá nic společného.
		FeRAM sa používali v digitronových kalkulačkách, ktoré zaberali polovicu stola v rokoch 1970 až 1990.
	www.cdr.cz /a/diskuze/prispevek/141323 (350 words)

	Epson New Zealand (Site not responding. Last check: 2007-10-15)
		Using an original technique, the company has been able to introduce niobium in 20 to 30 times the quantity that was previously practically possible.
		More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.
		By reducing energy consumption of flash memory by approximately 90%, PZTN has the potential to be used in current mobile nonvolatile memory applications such as in IC cards and mobile phones, and may even be a substitute for the majority of semiconductor memory in use today.
	www.epson.co.nz /news/pressreleases/286_2003.html (621 words)

	Tegal, Symetrix to Collaborate on FeRAM Technology - 9/20/1999 - Electronic News (Site not responding. Last check: 2007-10-15)
		Tegal and Symetrix said the FeRAM market is expected to grow from less than $20 million in 1998 to as much as $10 billion in 2002.
		FeRAMs are nonvolatile memory devices used in smart cards and other memory applications where battery backup is not feasible or desirable.
		FeRAMs employ a special class of ferroelectric and electrode materials that are particularly difficult to etch.
	www.edn.com /article/CA47924.html (722 words)

	Topics of Research
		In this way, conventional FeRAM, which was limited to use in the previous-generation logic LSI chips that used a one-layer or two-layer wiring process and 0.8um design rule, can now be used for high-performance system LSI chips that employ a 0.35um or finer design rule and multi-layer wiring of three or more layers.
		However, it is technologically difficult to incorporate the FeRAM macros for hybrid use in advanced- process chips that use multi-layer wiring, and their application has been limited to earlier-generation system LSI chips that are fabricated with a 0.8um design rule and employ no more than two-layer wiring.
		This technology made it possible to incorporate FeRAM into advanced system LSI chips that are fabricated with a 0.35um or finer design rule and employ multi-layer wiring of three or more layers, without loss of logic circuit performance.
	www.nec.co.jp /rd/Eng/Topics/data/r000125/index.html (684 words)

	3DNews: FeRAM Epson на новом материале - лидер долговечности
		FeRAM Epson на новом материале - лидер долговечности
		Как сообщает разработчик, новая FeRAM позволяет добиться в 10 раз большего количества циклов перезаписи, чем существующие решения других производителей.
		Как заявляет Epson, такие показатели позволяют не только использовать FeRAM в традиционных для энергонезависимой памяти приложениях, но и в некоторых случаях потеснить полупроводниковую память.
	www.3dnews.ru /news/feram_epson_na_novom_materiale_demonstriruet_svoi_muskuli-187463 (294 words)

	NEA - News from Asia Pacific: July 1998 - Japan
		FeRAM is a non-volatile memory similar to electrically erasable and programmable read only memory (EEPROM).
		However, conventional FeRAM chips used a legacy CMOS process with single aluminum metalization, leading to lower microcontroller performance, larger chip area and higher cost.
		The CPU, FeRAM, SRAM, ROM, interrupter, and clock generator are connected only to the address bus, control line, data bus and internal clock line.
	www.nikkeibp.com /nea/jul98/napjuly/jp.html (603 words)

	Hynix Semiconductor - Human & Digital
		"FeRAM is a non-volatile memory that combines the capacity of DRAM, the speed of SRAM, and the data retention capabilities of flash memory.
		The 64K FeRAM operates at 2V power, and the 256K FeRAM can be used in the 3V-to-5V range by stabilizing the standard voltage.
		These high-performance FeRAM products are also cost-effective for Hyundai to produce because they are compatible with the company's current DRAM production process.
	www.hei.co.kr /allnews/eng/preng_readA.jsp?NEWS_DATE=2001-06-10:09:46:07&CurrentPageNo=5&SearchKind=4&SearchWord=&SELECT_DATE=2000 (572 words)

	Memórias FeRAM
		As memórias FeRAM oferecem alta velocidade de escrita e baixo consumo de energia, além da capacidade de reterem os dados mesmo quando se desliga o equipamento.
		Espera-se que as memórias FeRAM desempenhem um papel central nas tecnologias de "computação em qualquer lugar", principalmente nas conexões de rede sem fio, comércio eletrônico e gerenciamento de segurança da informação.
		Comparadas com as memórias FeRAM de tecnologia CMOS de 0,35 micrômetros, as novas memórias agora lançadas possuem maior capacidade de armazenamento graças à tecnologia de 0,18 micrômetros, que aumenta sensivelmente a quantidade de células possíveis de serem fabricadas por unidade de área.
	www.inovacaotecnologica.com.br /noticias/noticia.php?artigo=010110030722 (403 words)

	Techweb > News > FeRAM For Cell Phones > Toshiba, Infineon Sign Cell Phone Memory Pact > December 21, 2000
		Toshiba said the collaborative effort will pick up from its development of an 8-Mbit FeRAM, and the first engineering samples of a jointly developed device will be available in March 2001.
		Commercialization of the 32-Mbit FeRAM is expected at the end of 2002.
		Toshiba and Infineon said the attributes of the FeRAM makes it well-suited for a range of applications, such as video game consoles, cell phones, wireless communication devices, and IC cards.
	www.colossalstorage.net /infineon_toshiba.htm (438 words)

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