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Topic: Ferroelectric capacitor

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Electrolytic capacitor

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Ferroelectric capacitor

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	United States Patent: 6,337,805 (Site not responding. Last check: 2007-10-08)
		Preferably, the gate is coupled to the ferroelectric capacitor by polysilicon, the junction formed at the gate has an intrinsic capacitance, and the capacitance of the ferroelectric capacitor is based on the magnitude of the intrinsic capacitance.
		A one transistor/one capacitor (1T/1C) memory cell comprising an edge defined ferroelectric capacitor operatively coupled to the gate electrode of a charge amplifier transistor by a polysilicon interconnect, wherein the edge defined ferroelectric capacitor is in a stacked alignment with an active gate oxide channel region of the transistor.
		Preferably, the ferroelectric capacitor has a small surface area relative to the surface area of the gate electrode and, most preferably, the ferroelectric capacitor is an edge defined ferroelectric capacitor, i.e., a capacitor formed by running the ferroelectric film over a step in the workpiece and then anisotropically etching the film in the vertical direction.
	web.engr.oregonstate.edu /~flf/6337805.html (9107 words)

	[No title] (Site not responding. Last check: 2007-10-08)
		It comprises a crystal for generating a reference frequency and a ferroelectric capacitor having a capacitance that is adjusted and then fixed during manufacture to set the initial tolerance of the crystal oscillator at ambient temperature.
		A fine tuning ferroelectric has a variable capacitance and is coupled to an automatic frequency control line that applies a control voltage to vary the capacitance of the fine tuning capacitor which, in turn, fine tunes the reference frequency generated by the crystal.
		A crystal oscillator comprising: a crystal for generating a reference frequency; and a ferroelectric capacitor having a capacitance that is adjusted and then fixed during manufacture to set the initial tolerance of the crystal oscillator at ambient temperature.
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=02/84858.021024&ELEMENT_SET=DECL (3843 words)

	ZSTT: A Ferroelectric Capacitor Macromodel (Site not responding. Last check: 2007-10-08)
		As its name suggests, the ZSTT model assumes the switching time of a ferroelectric capacitor to be zero.
		C0(V0) and C1(V1) represent the two nonlinear capacitors corresponding to the two binary states of the FE capacitor discussed earlier.
		The initial binary state of the capacitor, in this example, is considered to be 0.
	www.eecg.toronto.edu /~ali/ferro/model.html (717 words)

	Capacitive bolometer and method for detecting infrared radiation - Patent 4902895
		The transfer of charge to a reference capacitor in the invention lends the name "charge mode" to the detection cell of the invention, as opposed to conventional "voltage mode" detection cells in which a variance in voltage at the cell is measured to obtain a direct analog reading of incident temperature.
		At this point, the semiconductor surface with ferroelectric material 106 is in deep depletion, and its capacitance depends upon the depletion depth, or in the case of a sufficiently thin layer 108, the thickness of layer 108.
		At this point, the detection capacitor capacitance may be written as follows: ##EQU7## where C is the total detection capacitance, C.sub.f is the capacitance of the ferroelectric layer, and C.sub.d is the depletion capacitance of the semiconductor layer.
	www.freepatentsonline.com /4902895.html (4942 words)

	[No title] (Site not responding. Last check: 2007-10-08)
		A control line is coupled to the ferroelectric capacitor for applying a control voltage to the capacitor to vary the capacitance which, in turn, varies the tuning frequency of the resonant circuit.
		First and second ferroelectric capacitors are provided, and first and second control voltages are applied to the first and second capacitors so that either the first capacitor or the second capacitor dominates the output frequency of the oscillator.
		Capacitor C8 is a DC blocking capacitor, but could also optionally be a ferroelectric capacitor.
	www.wipo.int /cgi-pct/guest/getbykey5?KEY=02/84857.021024&ELEMENT_SET=DECL (3397 words)

	Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier - US Patent 6876021 (Site not responding. Last check: 2007-10-08)
		The plurality of ferroelectric capacitors are subjected to hydrogen contamination and performance parameters such as polarization retention for the plurality of ferroelectric capacitors are evaluated.
		A plot 610 of the characteristic hysteresis loop for a ferroelectric capacitor in accordance with an aspect of the present invention is depicted in FIG.
		Subsequent to the formation of the plurality of sidewall diffusion barrier layers, the plurality of ferroelectric capacitors are subjected to hydrogen as a contamination source at block 910 according to a flow rate and/or amount of hydrogen.
	www.patentstorm.us /patents/6876021.html (9993 words)

	Ferroelectric semiconductor memory device and a fabrication process thereof - US Patent 6777287 (Site not responding. Last check: 2007-10-08)
		As the ferroelectric semiconductor memory device carries out writing of information by controlling the spontaneous polarization of the ferroelectric capacitor insulation film, the writing operation is achieved with high speed, faster by a factor of 1000 or more than the case of a flash-memory.
		A ferroelectric capacitor insulation film 16 of PZT or PLZT covers the lower electrode 15, and an upper electrode 17 of Pt is formed on the ferroelectric capacitor insulation film 16.
		According to the present invention, the upper electrode is formed on the ferroelectric film prior to the annealing process conducted in the oxidizing atmosphere and hence prior to the formation of pinholes in the ferroelectric film.
	www.patentstorm.us /patents/6777287.html (7121 words)

	FeRAM Tutorial (Site not responding. Last check: 2007-10-08)
		Ferroelectric capacitors possess the two characteristics required for a nonvolatile memory cell, that is they have two stable states corresponding to the two binary levels in a digital memory, and they retain their states without electrical power.
		The capacitor array forms the simplest and the densest cell structure among ferroelectric nonvolatile memory designs.
		The 1T-1C ferroelectric memory cell is quite similar to a 1T-1C DRAM cell.
	www.eecg.toronto.edu /~ali/ferro/tutorial.html (743 words)

	Applications of Ferroelectric Ceramic Materials
		The biggest use of ferroelectric ceramics have been in the areas such as dielectric ceramics for capacitor applications, ferroelectric thin films for non volatile memories, piezoelectric materials for medical ultrasound imaging and actuators, and electro-optic materials for data storage and displays.
		C, the ferroelectric orthorhombic phase is stable with the polarization along one of the [110] directions in the original cubic structure.
		Hence the piezoelectric and pyroelectric properties depend on the degree of crystallinity of the polymer and the ferroelectric polarization of the crystalline phase [63, 64].
	www.rci.rutgers.edu /~ecerg/projects/ferroelectric.html (10045 words)

	[No title] (Site not responding. Last check: 2007-10-08)
		Ferroelectric does contain are magnetic field, the difference between ferroelectric and ferromagnetic is -electric the magnetic field is manipulated using electric currents
		Ferroelectrics are materials which have spontaneous electric polarizations analogous to the ferromagnetic materials with magnetic fields.
		The main difference with ferroelectric capacitors is that the permanent (but writeable) internal field makes them nonvolatile.
	www.geek.com /news/geeknews/2004Sep/gee20041004027237_comments.dat (495 words)

	Journal of Materials Research 1999 (Site not responding. Last check: 2007-10-08)
		Structure and composition of the ferroelectric Pb(Zr,Ti)O3 (PZT) layers in a capacitor of the ferroelectric random-access memory (FeRAM) device having a density of 64 k were investigated by transmission electron microscopy (TEM) together with the energy-dispersive spectroscopy (EDS) technique.
		The 250 nm thick PZT layer derived by sol-gel route showed a 2!=3% Pb-deficient, 3!=4% Ti-deficient, and 5!=7% Zr-excess composition at the top electrode interface compared to the bulk composition when they were as-fabricated.
		The major cause of the compositional variation was the outward diffusion of Pb through the capping barrier TiO2 layer during annealing at 650 ºC. AlN capping barrier layer was also not effective in suppressing the diffusion of Pb.
	www.mrs.org /publications/jmr/jmra/1999/may/053.html (193 words)

	A Survey of Circuit Innovations in Ferroelectric (ResearchIndex) (Site not responding. Last check: 2007-10-08)
		A ferroelectric memory cell consists of at least one ferroelectric capacitor, where binary data are stored, and one or two transistors that either allow access to the capacitor or amplify its content for a read operation.
		Once a cell is accessed for a read operation, its data are presented in the form of an analog signal to a sense amplifier, where it is compared...
		2 A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns (context) - Sumi, Moriwaki et al.
	citeseer.ist.psu.edu /624451.html (727 words)

	The Tom Bearden Website
		In a nonlinear ferroelectric capacitor there are three major nonlinear processes involved, so it is possible to carefully choose and arrange conditions so that the current through the capacitor moves against the voltage across its terminals.
		We eventually found there is indeed a U.S. manufacturer of ferroelectric capacitors with precisely that S-curve hysteresis loop.
		The literature continues to publish tests of just such ferroelectric capacitors, etc. Contacting several of the researchers who author those papers, we found that they (at least the ones contacted) were all making their own ferroelectric capacitors if they wished one with that square S-curve!
	www.cheniere.org /misc/ferroelectric.htm (1371 words)

	United States Patent 6,141,238 (Site not responding. Last check: 2007-10-08)
		Preferably, data is written to and read out of the storage capacitor during the first operating mode and written to and read out of the ferroelectric capacitor during the second mode of operation.
		Sheikholeslami; "Transient modeling of Ferroelectric Capacitors for Semiconductor Memories"; Thesis, University of Toronto; 1994; pp.
		Ramer et al.; "Ferrolelectric Capacitor Nondestructive Readout Memory"; Integrated Ferroelectircs 1995 vol.
	web.engr.oregonstate.edu /~flf/6141238.html (429 words)

	Expert in: Electrical Ceramics and Processing, Capacitors, Sol-Gel, Ferro- & Piezoelectrics, Integrated Films
		Expert has 40 years of experience in ceramic processing and properties of electrical ceramics, including capacitors, insulators, dielectrics, inductors, resistors, thermistors, sensors, transducers, varistors, superconductors, and thin-layer capacitors.
		His emphasis is on interrelationships that exist in the processing cycle, and their manipulation to advantage, between composition, structure, and properties.
		Expert has established a research facility for ferroelectric and related materials--piezoelectrics, pyroelectrics, and electrostriction--with dielectric measurement and characterization capability as a function of temperature, voltage, frequency, and other variables.
	www.intota.com /viewbio.asp?bioID=603934&perID=108189 (1127 words)

	Relating Local Electric Field in FE Capacitors (Site not responding. Last check: 2007-10-08)
		However, the parameters in the field-dependent polarization are usually extracted based on the macroscopic experimentally averaged field, i.e., applied voltage divided by film thickness.
		In this work physical quantities such as field, potential, electric displacement and polarization inside the ferroelectric capacitor are obtained by assuming that the capacitor is wholly depleted.
		The technique presented in this work provides a simple and direct way of relating the macroscopic properties of the capacitor to the actual electric field and potential distribution in the ferroelectric film, furthermore, it will serve as a basis for the C-V modeling of ferroelectric capacitors.
	www.mse.arizona.edu /faculty/birnie/abs9405.htm (252 words)

	Selected Journal Publications
		Todd C. MacLeod, Thomas A. Philips, and Fat Duen Ho, "Characteristics of Ferroelectric Logic Gates Using a SPICE-Based Model", Accepted for presentation at the 17th International Symposium on Integrated Ferroelectrics in Shanghai, China, April 17-20, 2005.
		Todd MacLeod and Fat Duen Ho, "Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization," presented in the 16th International Symposium on Integrated Ferroelectrics, Gyeongju, South Korea, April 5-8, 2004.
		C MacLeod and Fat Duen Ho, "I-V Characteristics of a Ferroelectric Field Effect Transistor," 12th International Symposium on Integrated Ferroelectrics, Aachen, Germany, March 2000.
	www.ece.uah.edu /faculty/Ho/information.htm (1041 words)

	-MRS-
		Applications of ferroelectric films, including recent commercial developments, and materials science issues.
		Ferroelectric films for DRAMs and other capacitor applications (device principles, materials needs, material types, physical properties, impact on capacitor performance, processing and composition effects, obstacles to Gbit integration)
		MICROSTRUCTURE OF FERROELECTRIC SUPERLATTICES GROWN BY A MOLECULAR BEAM EPITAXY.
	lucy.mrs.org /meetings/fall99/progbook/ProgramBookY.html (5486 words)

	esp@cenet document view
		Why do I sometimes find the abstract of a corresponding document?
		This invention is related to the manufacturing method of ferroelectric capacitor, which can be applied to the memory cell of FRAM (Ferroelectric Random Access Memory).
		The ferroelectric capacitor not only has a lower leakage current level and a higher degree of remanent polarization than the conventional capacitor, but also has almost the same leakage current level as an existing Pt/PZT/Pt capacitor.
	v3.espacenet.com /textdoc?IDX=US5913117&CY=ep&LG=en&DB=EPODOC (127 words)

	Disclosure 95-010 (Site not responding. Last check: 2007-10-08)
		Title: Process for Fabricating a Ferroelectric Capacitor with Fatigue Free Properties in a Semiconductor Device
		Description: A wet chemical etching process for the patterning of electrodes and a ferroelectric layer in a ferroelectric capacitor, which is formed in a semiconductor FRAM device.
		For more detailed information on any of our technologies available for license, please download and complete our Confidentiality Agreement.
	www.vtip.org /Licensing/disclosures/95-010.htm (79 words)

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