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	Method of growing GaAs films on Si or GaAs substrates using ale - Patent 4876218
		When a GaAs film is grown on a silicon substrate with a different chemical composition, the most critical problem is the lattice mismatch between gallium arsenide and silicon due to the differing lattice constants, causing a high dislocation density and surface defect density in the grown films.
		When growing GaAs layers by a conventional MBE method (MBE=Molecular Beam Epitaxy) on Si substrates, GaAs nucleates as three-dimensional islands which are coherently strained, i.e., are free of misfit dislocations.
		It has been observed that GaAs films grown by the method according to the invention have a low surface defect density and a high electron mobility, a film of 1.85.mu.m nearly possessing the properties of a GaAs bulk crystal.
	www.freepatentsonline.com /4876218.html (2711 words)

	Title III
		Defense demand accounted for the majority of SI GaAs demand prior to the Title III project but is now outpaced by commercial demand, driven by the requirements of cellular communications, wireless networks, and GPS receivers.
		The GaAs operations of the three domestic firms in this market were struggling financially, and one or more of these firms were at risk to drop out of this market altogether.
		GaAs wafer sales of the three Title III contractors grew by approximately 300 percent (measured in dollar value) during the project, despite a 40-percent reduction in the average price of GaAs wafers.
	www.acq.osd.mil /ott/dpatitle3/print/print_sigaas.htm (907 words)

	GAAS scholarship
		GAAS awards about 100 scholarships per year of $1,000 each.
		The GAAS Scholarship funds are sent directly to the recipient’s school to be applied to their account.
		Students who receive a GAAS scholarship and begin a career as an automotive aftermarket technician are eligible for a matching grant.
	www.automotivescholarships.com /faq.htm (260 words)

	GaAs (Site not responding. Last check: 2007-10-19)
		GaAs is of particular interest for several reasons.
		The electron mobility in GaAs is very high, about 8 times greater than that of silicon, and the lifetime of the photogenerated carriers is about 10 ns, compared to 10 ms for silicon.
		GaAs has been extensively studied and the physics are fairly well understood, which makes GaAs attractive as a benchmark system for TRTS.
	www.chem.yale.edu /~cas/gaas.html (671 words)

	GAAS and the small business auditor: ten years later. (general accepted auditing standards)
		Majorities (72% in 1991 and 69% in 1981) felt that existing GAAS were not responsive to the needs of small business auditors and that only the concerns of large businesses were taken into account in the development of GAAS and related guidance (86% in 1991 and 71% in 1981).
		Although there was a slight drop in the percentage of respondents favoring a separate set of GAAS and those believing that a separate set of GAAS would be operationally feasible, it is clear that most respondents were in favor of some type of change.
		Concerns about a separate set of GAAS for small business audits--such as creating the impression of a lower-class audit, creating a second class of auditors, and pressure for lower audit fees--could be adequately addressed by educating small business clients and financial statement users.
	www.nysscpa.org /cpajournal/old/12268828.htm (3137 words)

	PRET Research-Electrical Characterization of LTG GaAs
		One of the most interesting aspects of LTG GaAs is that its properties are very sensitive to the growth temperature and also to the temperature of a postgrowth anneal, as shown in Figure 1.
		Figure 3: Bright field TEM images of two samples from the same LTG GaAs epilayer, grown at 225°C and annealed for 30 seconds at (a) 600°C, and (b) 750°C. The dark 'spheres' are As precipitates.
		Results for a 100Å thick LTG GaAs layer grown at 250°C and annealed at 600°C are shown in Figure 5.
	www.ece.ucsb.edu /pret/ibboresearch.html (788 words)

	Industry Snapshot, 10/03/97: GaAs Valley
		The manufacturing process starts with a pure crystal of GaAs that is typically grown from seed crystal, which is then sliced into ultra-thin "wafers" with a diamond saw.
		In the early stages of GaAs development, operators couldn't count on getting wafers that were of uniform shape or size, which made forecasting for high-volume manufacturing extremely difficult.
		Today the GaAs industy is undergoing a conversion from 4 to 6 inch wafers, which will boost yields, but still lags behind in comparison to their well-endowed brethren in the silicon wafer arena that use current wafer sizes of 8 inches and moving to 12 inches in the future.
	www.fool.com /Decathlon/Decathlon.htm (810 words)

	ANADIGICS: Engineers Room - GaAs MESFETs are Expected to Make BIG GAINS in Portable Communications Applications (Site not responding. Last check: 2007-10-19)
		GaAs MESFET devices are similar to silicon metal-oxide semiconductor field-effect transistors (MOSFETs) in that they are majority carrier devices.
		GaAs MESFETs have a Schottky-diode gate which can also be used as a switching diode.
		GaAs technology will be a strong competitor to silicon in some voltage-conversion applications.
	www.anadigics.com /GaAsline/mesfets.html (1187 words)

	Meineke Car Care Center -- GAAS Scholarship
		The GAAS scholarship program serves as a "career accelerator," providing qualified students with financial grants to help them complete their automotive education.
		If you have a family member, neighbor or friend with a son or daughter who is considering a career as an automotive technician, you'll want to make them aware of this outstanding scholarship opportunity.
		The annual GAAS program brings together numerous industry executives and examines the issues and trends affecting the automotive aftermarket industry and influencing its future.
	www.meineke.com /jobs/gaas_scholarship.asp (217 words)

	Gaas - Vikipeedia, vaba entsüklopeedia
		Gaas on aine agregaatolek, milles osakesed (aatomid ja molekulid) liiguvad vabalt, olemata püsivas vastasmõjus aine teiste osakestega.
		Gaas, nagu vedelikki, voolab ja võtab teda mahutava anuma kuju.
		Erinevalt vedelikust ei okupeeri gaas mitte kindlat ruumala, vaid paisub võimaluse korral lõputult.
	et.wikipedia.org /wiki/Gaas (137 words)

	Stability of a Low-Temperature Grown GaAs Surface Layer Following Air Exposure Using Tunneling Microscopy
		The stability of a GaAs layer structure consisting of a thin (10 nm) layer of low-temperature-grown GaAs on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, has been studied using a scanning tunneling microscope.
		Tunneling spectroscopy shows both the GaAs band edges and a band of midgap states associated with the excess As in the surface layer.
		C. Characterization of a (110) surface of the LTG:GaAs layer exposed by cleaving in UHV identified a band of midgap states associated with the excess arsenic.[1, 2, 3] For heavily doped n-type (n+) layers, this band of states was located above the valence band edge of the material.
	www.physics.purdue.edu /nanophys/papers/hong96/hong96.html (1853 words)

	GaAs Detectors
		In collaboration with E2V Technologies (formerly EEV / Marconi Applied Technologies), GaAs detectors have been fabricated using bulk grown and epitaxial material from a variety of sources.
		Experiments have been conducted between +30 °C and -130 °C to identify dominant trap energy levels by measuring trap release time constants, and proton spectra have been used to measure the width of the depletion region and to confirm that it increases linearly with applied bias.
		It has also proved an aid to predicting trends with temperature, bias etc. and has been successfully used to fit spectra measured with different shaping times, giving trap release time constants and hence a value for trap activation energy.
	www.src.le.ac.uk /instrumentation/solid_state/semiconductors/gaas.html (280 words)

	Integrated SAWs using GaAs
		The piezoelectric properties of GaAs, which are similar to quartz, allow SAW devices to be fabricated directly on a GaAs substrate eliminating the need for deposited piezoelectric thin films.
		In addition, GaAs is a well-developed semiconductor device material for fabrication of integrated high-frequency RF microelectronics.
		Picture of an integrated 470 MHz GaAs SAW sensor with associated oscillator circuitry for operating the SAW device at its center frequency and providing a frequency output that is sensitive to changes in SAW velocity.
	www.sandia.gov /mstc/technologies/microsensors/sawgaas.html (624 words)

	Gallium(III) arsenide - Wikipedia, the free encyclopedia
		Another advantage of GaAs is that it has a direct band gap, which means that it can be used to emit light.
		Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick.
		The combination of GaAs with germanium and indium gallium phosphide is the basis of a triple junction solar cell which holds the record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns.
	en.wikipedia.org /wiki/Gallium_arsenide (652 words)

	OPGaAs Mid IR coherent sources
		The 8-12 mm atmospheric window is a particularly important region for chemical sensing as many functional groups absorb there and absorption strengths can be up to ten times larger than in the mid-infrared region.
		By introducing a mis-orientation to the GaAs substrate, we can break the symmetry of the Ge surface and preferentially nucleate one of the two possible GaAs domains, in particular that anti-phase to the substrate.
		GaAs has excellent characteristics for parametric frequency conversion and is potentially one of the most attractive mid-IR nonlinear optical materials.
	snow.stanford.edu /~levi/OPGaAs.html (704 words)

	In the face of competition, GaAs continues to grow
		While RF CMOS and silicon germanium (SiGe)-based biCMOS technologies continue to make progress and advance on the traditional gallium arsenide (GaAs) turf, with RF LDMOS power transistors improving in frequency, performance and cost to strengthen their position in the wireless infrastructure space, GaAs-based ICs and power transistors are not taking a back seat.
		Mobile and cellular handsets are expected to be the primary drivers for GaAs growth, characterized by multimode and multiband operational requirements.
		Last year, Anadigics pushed the integration envelope for GaAs ICs by merging HBT and pHEMT transistors on the same die to merge PAs and RF switches on a single RF chip.
	rfdesign.com /mag/radio_face_competition_gaas (732 words)

	AWR > Company > Alliance Partners > GaAs Foundry
		Cree, Inc. is a market-leading innovator and manufacturer of semiconductors that enhance the value of LED solid-state lighting, power and communications products by significantly increasing their energy performance.
		Their baseline processes include GaAs based HBT and PHEMT technologies, which are ideal to meet most requirements for wireless, high speed optics and millimeter-wave applications.
		This team is familiar with the latest developments in GaAs technology and will provide continuous research and development to meet our customers' technology requirements.
	web.appwave.com /Company/Alliance_Partners/GaAs_Foundry.php (513 words)

	Gallium Arsenide [GaAs]
		Etching of GaAs may be done only at designated stations.
		High temperature processing of GaAs may be done only at designated stations: the GaAs furnace bank, rtaag, pecvd.
		Wet etching and cleaving of GaAs may be done only at wbgaas and wbsolvent and only when appropriate measures are taken to ensure that waste is collected and disposed of appropriately.
	snf.stanford.edu /Materials/ChemFiles/GaAs.html (295 words)

	GaAs/InGaAs Quantum Well Solar Cells
		The quantum well (QW) technique may be applied in the GaAs material system with the aim to demonstrate the efficiency enhancement achieved in other material systems [1].
		The homogeneous GaAs cell represents the base-line for recombination in the solar cell.
		The impaired optical response with respect to the GaAs cell is attributed to a poor AR coating, rather than any intrinsic failure in the device.
	www.sc.ic.ac.uk /~q_pv/ingaas.html (2150 words)

	Fluences
		This is due to the fact that the 1 MeV neutron cross sections are similar for the two materials whilst the number of atoms in GaAs per unit mass is lower due to the larger atomic weight.
		The simulations of the expected radiation levels for the ATLAS Inner Detector were performed by A. Ferrari [6], constructing a detector model which produces the location and quantity of the material in the Inner Detector and calorimeter regions, including the supports and services.
		By assuming that the damages in Silicon and in GaAs scales with the NIEL, the NIEL values for Silicon and GaAs were taken from Figure 1, 2, and 3 respectively.
	www.atlas.uni-wuppertal.de /optolink/fluences.html (1398 words)

	European Microwave Week 2005 - Paris
		The 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS®) will be held from 3 to 4 October 2005, in Paris, France, as part of European Microwave Week.
		In such a swiftly changing environment, it is essential to be informed about the current state-of-the-art technology, especially the latest developments.
		GAAS® is one of the leading conferences for RFICs and their applications in Europe, and therefore the ideal event to keep up to date with the latest achievements in the field.
	www.eumw2005.com /gaas2005.html (222 words)

	Microwave Engineering Online - Consolidation hits GaAs foundry market
		In fact, two GaAs foundry vendors are completely off the radar screen, while two others recently merged.
		Still, many believe that GaAs is a technology that is still waiting to take off after decades of promises.
		But still, GaAs is a relatively small market that is able to support only a few foundries.
	www.mwee.com /showArticle.jhtml?articleID=170700996 (626 words)

	Eesti Gaas » in english » Company
		The object of Eesti Gaas Group is to provide high-quality complete services in order to make life more comfortable and environment-friendly with the help of natural gas.
		Eesti Gaas Group is an organization with professional and friendly employees and its object is to guarantee the increase of the Group’s turnover through satisfied customers and economic effectivity.
		AS EG Ehitus was established in December 2004 on the basis of previously operating structures and employees and its basic activities consist of constructing gas pipelines and structures.
	www.gaas.ee /index.php?page=3&PHPSESSID=c8ccdb63c73b72dbad46f221add796d3 (254 words)

	European suppliers losing out in GaAs devices (Site not responding. Last check: 2007-10-19)
		In its annual ranking of the world's top GaAs device manufacturers, detailing the movers and shakers in 2005, all ten are from Asia or the U.S. According to Strategy Analytics, Eudyna Devices, Sony and NEC slipped out of the top ten last year, while Mitsubishi Electric and Toshiba gained market share.
		Mitsubishi Electric was the Japanese market leader in the 2005 GaAs device market and saw significant growth for its MMIC business as it led supply of GaAs power amplifiers to the Japanese 3G cellular handset market.
		Seven of the top ten GaAs device manufacturers in 2005 were based in North America, with the usual suspects being joined by the fabless company, Hittite.
	eetimes.eu /uk/192202752 (515 words)

	Gallium Arsenide Wafers (GaAs Wafers) and GaAs Hall Sensor
		The high quality GaAs single crystal wafers provide the advantages of high yield and efficiency necessary to produce high-performance optical GaAs devices.
		Our high quality GaAs single crystal wafers provide the advantages of high yield and efficiency necessary to produce high-performance optical GaAs devices.
		Semi-insulating LEC (Liquid Encapsulated Czochralski) grown GaAs wafers suitable for both ion-implantation and epitaxial growth.
	www.marubeni-sunnyvale.com /gaas_wafers.html (326 words)

	2000 GaAs IC Symposium (Site not responding. Last check: 2007-10-19)
		Over the last 22 years, the IEEE GaAs IC Symposium has become the preeminent international forum on developments in integrated circuits using GaAs, InP, SiGe, Wide Bandgap GaN or SiC, and other compound semiconductor devices.
		The IEEE GaAs IC Symposium is the forum where the latest results in high-speed digital, analog, microwave/millimeter wave, mixed mode, and optoelectronic integrated circuits are presented.
		The 2000 IEEE GaAs IC Symposium will be held November 5th through 8th, 2000, at the Westin Hotel in Seattle, Washington, USA.
	www.ieee.org /organizations/pubs/newsletters/eds/oct00/GaAs_IC.htm (507 words)

	GaAs Research of the Webergroup
		Our group has a long standing tradition of research in GaAs, with a main focus on defect characterization and growth.
		One of the main topics has been growth and characterization of non-stoichiometric GaAs layers (so called low temperature grown GaAs).
		- molecular beam epitaxial (MBE) growth and characterization of nonstoichiometric GaAs, especially influence of doping
	www.mse.berkeley.edu /groups/weber/research/gaas.html (148 words)

	Ernst & Young - AABS - Assurance - IAS - Intl GAAP and GAAS
		GAAIT's International GAAP and GAAS channel includes standards and guidance issued by the International Accounting Standards Board (IASB) and the International Federation of Accountants (IFAC).
		Learn more about GAAIT and the International GAAP and GAAS channel with this convenient brochure (pdf, 3.6mb) and pricing schedule (pdf, 948bb).
		This issue's technical focus is on the IASB's project to develop an IFRS for Small and Medium-sized Entities.
	www.ey.com /global/content.nsf/International/Assurance_-_IAS_-_Intl_GAAP_and_GAAS (264 words)

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