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Topic: Gallium Nitride

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	United States Patent Application: 0010007242
		A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein, and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer.
		A gallium nitride semiconductor structure comprising: an underlying gallium nitride layer; a lateral gallium nitride layer that extends from the underlying gallium nitride layer; and a plurality of microelectronic devices in the lateral gallium nitride layer.
		In a preferred embodiment, a gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a mask that includes an array of openings therein and growing the underlying gallium nitride layer through the array of openings and onto the mask, to thereby form an overgrown gallium nitride semiconductor layer.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20010007242.PGNR.&OS=DN/20010007242 (4881 words)

	United States Patent Application: 0010008791
		More specifically, gallium nitride semiconductor layers may be fabricated by etching an underlying gallium nitride layer on a sapphire substrate, to define at least one post in the underlying gallium nitride layer and at least one trench in the underlying gallium nitride layer.
		Specifically, an underlying gallium nitride layer on a sapphire substrate may be etched to define at least one post in the underlying gallium nitride and at least one trench in the underlying gallium nitride layer.
		C.) aluminum nitride buffer layer and/or a low temperature (500.degree.) gallium nitride buffer layer 102b that was deposited on the sapphire substrate 102a in a cold wall vertical and inductively heated metalorganic vapor phase epitaxy system using triethylgallium at 26.mu.mol/min, ammonia at 1500 sccm and 3000 sccm hydrogen diluent.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20010008791.PGNR.&OS=DN/20010008791&RS=DN/20010008791 (5487 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-11-07)
		Gallium nitride semiconductor structures therefore may be fabricated, according to the present invention, by providing a textured substrate, including a plurality of non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium-nitride sidewalls and non-gallium nitride tops, and the trenches include non-gallium nitride floors.
		Gallium nitride then is grown at a first temperature and the growth of gallium nitride then is continued at a second temperature that is higher than the first temperature.
		gallium nitride layer 110 is on the conformal buffer layer 102 opposite the substrate 100.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/59819.010816&ELEMENT_SET=DECL (4941 words)

	gallium on Encyclopedia.com (Site not responding. Last check: 2007-11-07)
		Gallium is a liquid over a wide temperature range and has a low vapor pressure even at high temperatures; it has found limited use in thermometers and manometers for high-temperature measurements.
		Gallium is chemically similar to aluminum, the element above it in group IIIa of the periodic table.
		Gallium arsenide and gallium phosphide are used in rectifiers and transistors as semiconductors and in lasers, light-emitting transistors, photocells, and electronic refrigeration.
	www.encyclopedia.com /html/g1/gallium.asp (553 words)

	World Intellectual Property Organization (Site not responding. Last check: 2007-11-07)
		Background Gallium nitride (GaN) is a wide-bandgap semiconductor material widely known for its usefulness as an active layer in blue light emitting diodes.
		During growth of the gallium nitride from the mask, the vertical and horizontal growth rates of the gallium nitride layer are maintained at rates sufficient to prevent polycrystalline material nucleating on said mask from interrupting the lateral growth of the gallium nitride layer.
		A fabrication method according to Claim 54 comprising maintaining the vertical and horizontal growth rates of the gallium nitride layer at rates sufficient to prevent polycrystalline material that may nucleate on the mask from interrupting the lateral growth of the gallium nitride layer.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/27980.010419&ELEMENT_SET=DECL (6585 words)

	Gallium Nitride: novel material for the new millennium (Site not responding. Last check: 2007-11-07)
		Gallium, aluminum and indium are metallic elements that all reside on column three of the Period Table.
		Gallium nitride promises big improvements in the performance of ultra-wide bandwidth communications and radar systems because it can deliver up to 10 times as much power at microwave frequencies as the silicon and gallium-arsenide semiconductors now used in cellular telephones, military radar systems and satellite transmitters.
		Due to gallium nitride's chemical composition, scientists also expect the material to exhibit greater "radiation hardness," an attribute that is highly desirable for applications in outer space where components must operate reliably in radioactive environments.
	www.dcmilitary.com /navy/journal/6_08/national_news/5169-1.html (1091 words)

	A new advance in gallium nitride nanowires
		Co-authors of the report, Crystallographic Alignment of High-density Gallium Nitride Nanowire Arrays, in addition to Yang, were Yanfeng Zhang, Donald Sirbuly and Jonathan Denlinger of Berkeley Lab, and Tevye Kuykendall, Peter Pauzauskie and Joshua Goldberger, of UC Berkeley.
		The crystals of both materials are geometrically compatible with gallium nitride crystals but the lithium aluminum oxide features a two-fold symmetry that matches the symmetry along one plane of the gallium nitride crystals, whereas the magnesium oxide has a three-fold symmetry that matches gallium nitride symmetry along a different plane.
		Because of the different growth direction, cross-sections of the gallium nitride nanowires grown on lithium aluminum oxide form an isosceles triangle, while the cross-sections of those grown on magnesium oxide are hexagonal.
	www.eurekalert.org /pub_releases/2004-07/dbnl-ana073004.php (737 words)

	Will Gallium Nitride Revolutionize Electronics As It Has Optoelectronics? (Site not responding. Last check: 2007-11-07)
		Gallium nitride's prominence as the currently most promising compound semiconductor is due in large measure to the work of one man--Mishra's UCSB colleague, Materials Professor Shuji Nakamura, who used gallium nitride to create the first blue, green, ultraviolet, and white Light Emitting Diodes (LEDs), as well as a blue laser.
		What gallium nitride has going for it is a wide band gap between the valence and conduction bands of the semiconductor.
		The bonding between nitrogen and gallium atoms in a unit cell of gallium nitride is very tight.
	www.sciencedaily.com /releases/2002/05/020522073746.htm (1289 words)

	Sumitomo Electric Announces Concrete Strategies on the Reorganization of Its Hard Materials Division and Powder Metal ... (Site not responding. Last check: 2007-11-07)
		Large-sized gallium nitrade substrates will not only lower costs and fundamentally improve blue laser performance, but they will also accelerate development and mass production of gallium nitride devices, such as blue lasers for the next generation of DVD applications.
		The gallium nitride single-crystal substrate is conductive, which allows electrodes to be placed on both sides of the chip.
		With gallium nitride single-crystal substrates, the substrate and the epitaxial layer are the same material, thereby allowing cleavage to occur far more easily than with sapphire substrates.
	www.sei.co.jp /news_e/press/00/00_02.html (544 words)

	04.09.2003 - Building nanotubes of gallium nitride rather than carbon yields optically active nanotubes
		And because it is easy to attach organic molecules to gallium nitride surfaces, the hollow tubes hold promise as chemical sensors.
		Gallium nitride also is a material well known in the semiconductor industry, and is used in many optical, high-temperature and high-voltage electronic circuits.
		The molecular structure of a carbon nanotube is often depicted as rolled chicken wire, though, in fact, the tube is pure carbon, with dimensions on the order of 1 to 10 nanometers wide and perhaps 100 to 1,000 times that in length.
	www.berkeley.edu /news/media/releases/2003/04/09_tubes.shtml (843 words)

	The Cambridge Centre for Gallium Nitride (GaN)
		Gallium nitride is probably the most important semiconductor material since silicon.
		The Cambridge Centre for Gallium Nitride is based in the Department of Materials Science and Metallurgy at the University of Cambridge.
		The heart of our GaN Centre is a new state-of-the-art Thomas Swan six two-inch wafer MOCVD growth system, which was established in collaboration with Thomas Swan Scientific Equipment Limited.
	www.msm.cam.ac.uk /GaN (375 words)

	Gallium nitride activity continues to thrive (June 2003) - News - Compound Semiconductor
		There continues to be rapid growth in the level of commercial and R&D activity in the gallium nitride field, according to a new report from Strategies Unlimited.
		Since 1999, the market for gallium nitride devices (primarily blue, green and white high-brightness LEDs) has grown by 221% to $1.35 billion, according to new report from market research firm Strategies Unlimited.
		The report, entitled "Gallium Nitride 2003 – Technology Status, Applications, and Market Forecasts", says that the worldwide growth and momentum for both commercial and R&D activity relating to gallium nitride devices and materials has never been more robust.
	www.compoundsemiconductor.net /articles/news/7/6/8/1 (419 words)

	A.Vozny resume - gallium nitride (GaN) and aluminum nitride (AlN) theoretical investigation. (Site not responding. Last check: 2007-11-07)
		Gallium nitride (GaN) and aluminum nitride (AlN) theoretical investigation
		It is shown that the major contribution to the band-gap bowing parameter is made by the compositional disorder, whereas the bond-length relaxation reduces the effect of compositional disorder and the effects of the volume deformation.
		The band structure of Aluminum Gallium Nitride substitutional solid solution is calculated by the method of local model pseudopotential in the modified virtual-crystal approximation.
	nitride.elinity.com (415 words)

	Gallium Nitride (GaN) Substrates & Wafers from READE (Site not responding. Last check: 2007-11-07)
		gallium nitride, substrate, wafer, boule, gallium (III) nitride, GaN, Ga1N1, gallium nitride, substrate, wafer, boule, gallium (III) nitride, GaN, Ga1N1
		Gallium nitride substrates, wafer, boule, gallium (III) nitride, GaN, Ga1N1
		gallium nitride, substrate, wafer, boule, gallium (III) nitride, GaN, Ga1N1, gallium nitride, substrate, wafer, boule, gallium (III) nitride, GaN, Ga1N1, gallium nitride, substrate, wafer, boule, gallium (III) nitride, GaN, Ga1N1
	www.reade.com /products/Nitrides/gallium_nitride_substrate_wafer.html (152 words)

	Sandia National Laboratories – News Release – Colored LEDs
		Cantilever epitaxy of gallium nitride is of interest for several programs at Sandia, including high-electron-mobility transistors being developed for potential use in miniature synthetic aperture radar systems (SAR) and high-efficiency solid-state lighting being investigated in the Grand Challenge LDRD.
		Gallium nitride can also be made to emit ultraviolet (UV) light, and compact solid-state UV emitters would be useful for detecting biological and chemical toxins for homeland security.
		A gallium nitride nucleation layer is then grown on the sapphire posts at a temperature of 500-600 °C. This nucleation layer helps bridge the crystal-lattice difference between the gallium nitride and the sapphire.
	www.sandia.gov /news-center/news-releases/2003/elect-semi-sensors/cantilev.html (1317 words)

	Cornell News: Gallium nitride transistors
		Among the most important uses for gallium nitride transistors, Eastman said, will be a new generation of communications satellites serving portable telephone users.
		Currently, Eastman said, his laboratory is testing chips with arrays of gallium nitride transistors that add up to a total length of about half a millimeter.
		The bond between the two layers places a strain on the upper layer that allows free electrons to flow into the gallium nitride layer, a phenomenon known as a piezoelectric effect.
	www.news.cornell.edu /releases/Aug98/gallium_nitride.bs.html (933 words)

	Business Wire: Worldwide Markets and Development Activity for ... @ HighBeam Research (Site not responding. Last check: 2007-11-07)
		Overall, the market for gallium nitride devices of all types is forecast to grow to $4.5 billion by 2007.
		Gallium Nitride 2003 is a 370-page report that addresses the worldwide activity in gallium nitride development, including material properties, substrates, deposition, etching, contacts, packaging, and optoelectronic and electronic device performance.
		Gallium Nitride 2003 -- Technology Status, Applications and Market Forecasts is available for immediate delivery from Strategies Unlimited for $3,950.
	www.highbeam.com /library/doc0.asp?DOCID=1G1:102854629&refid=holomed_1 (588 words)

	triangletechjournal (Site not responding. Last check: 2007-11-07)
		Some have likened the recent developments in Gallium Nitride to the rapid growth of the silicon semiconductor industry in the 1970's and early 80's and see great potential in using the compound.
		Nitronex is focusing solely on Gallium Nitride applications and has developed a process that allows Gallium Nitride to be integrated with ordinary silicon wafers.
		Gallium Nitride (GaN) is composed of crystals "grown" in a laboratory.
	www.triangletechjournal.homestead.com /jan2002chips.html (1502 words)

	Report: Gallium Nitride Markets Continue to Thrive - 9 of June, 2003 - Photonics.com (Site not responding. Last check: 2007-11-07)
		As of the first quarter of 2003, 184 companies were involved in gallium nitride production or development (devices, materials and equipment), and 293 universities and research centers were involved in gallium nitride R&D, an increase of 74 percent and 24 percent, respectively, since it conducted a gallium nitride survey in May 2002, Strategies Unlimited said.
		Since 1999, the market for gallium nitride devices (primarily blue, green and white high-brightness LEDs) has grown by 221 percent to $1.35 billion.
		Since the beginning of the first significant commercial shipments of gallium nitride LEDs in 1995, the market has grown at an average annual rate of 64.5 percent.
	photonics.com /todaysheadlines/XQ/ASP/url.lookup/id.4072/QX/today.htm (372 words)

	UCSB College of Engineering Press Release (Site not responding. Last check: 2007-11-07)
		The gallium nitride group here at the College of Engineering--six outstanding professors and their 30 brilliant graduate students--is truly top-notch; they are pioneers among university researchers in making the blue laser.
		Without the indium, the gallium nitride crystal produces a higher frequency ultraviolet light, which is not visible.
		Though gallium is common to both materials, it is the move from its combination with arsenic to combination with nitrogen that is key.
	www.engineering.ucsb.edu /Announce/nakamura.html (1539 words)

	Gallium Nitride: Novel Material for the New Millenium
		Then a remarkable kind of semiconducting material made from gallium nitride and its close chemical cousins: aluminum nitride and indium nitride may be the answer.
		"Gallium nitride is a material that few people outside of the electronics field have even heard of," said ONR Program Officer John Zolper.
		One of the most urgent commercial uses for gallium nitride transistors will be the communications satellites that serve communications users and digital satellite TV customers.
	www.spacedaily.com /news/materials-01a.html (1489 words)

	Research News: A New Advance in Gallium Nitride Nanowires
		BERKELEY, CA – A significant breakthrough in the development of the highly prized semiconductor gallium nitride as a building block for nanotechnology has been achieved by a team of scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California at Berkeley.
		When grown on a substrate of lithium aluminum oxide, gallium nitride nanowires are triangular in cross section.
		The cross section of gallium nitride nanowires grown on a magnesium oxide substrate is hexagonal.
	www.lbl.gov /Science-Articles/Archive/MSD-nanowires.html (834 words)

	Silicon substrates provide a disruptive technology for GaN (November 2001) - Compound Semiconductor magazine - Compound ... (Site not responding. Last check: 2007-11-07)
		Substrates for gallium nitride growth are generally small, expensive and difficult to work with, but GaN-on-silicon offers a viable alternative, according to Warren Weeks and Ricardo Borges.
		Although the performance benefits of gallium nitride are well documented, the manufacturability and cost benefits of GaN are less certain.
		Due to the large lattice mismatch between GaN and sapphire ≅13%), amorphous low-temperature (≅500-600 °C) aluminum nitride or GaN buffer layers approximately 25 nm thick are used to nucleate subsequent GaN device layers.
	compsemi.iop.org /magazine/article/7/11/5/1 (1164 words)

	[No title]
		Gallium Nitride Epitaxial Wafer consists of a thin undoped GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) directly on (0001)Si face on-axis 6H-SiC or 4H-SiC substrate.
		Silicon carbide insures excellent heat removal from nitride device structure, which is important for high-power devices.
		Silicon Carbide Epitaxial Wafer consists of a thin SiC homoepitaxial layer grown on a SiC substrate and firstly is specified by reduced micropipe density.
	www.marubeni-sunnyvale.com /gallium-nitride-wafers.html (1374 words)

	EETimes.com - Pure gallium nitride wafers likely to change blue-violet laser market (Site not responding. Last check: 2007-11-07)
		Gallium nitride (GaN) is used for the lasers since they oscillate most efficiently around this wavelength.
		In the VAS method, a nitride titanium film is inserted between the sapphire substrate and the GaN growth layer.
		The nitride titanium film works not only to ease separation, but also to decrease the number of dislocations, the spokesman said.
	www.eetimes.com /story/OEG20030325S0038 (2351 words)

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