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Topic: Gallium hydride

Related Topics

gallium arsenide

Gallium Nitride

terbium gallium garnet

Gallium imaging

Gallium hydride

Alum, ammonium gallium

Gallium phosphide

Ammonium gallium sulfate

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	Gallium in Weapons-Grade Plutonium
		Gallium is used as an alloying element in the manufacture of plutonium pits in concentrations of up to 1 percent.
		Since plutonium pits do not all have the same concentration of gallium, the sintering process parameters would have to be adjusted as the gallium concentration changed (undesirable in an industrial-scale operation) unless the gallium was reduced to an acceptable level prior to fabrication.
		The gallium is driven out by reduction and conversion to a sub-oxide form (Ga O) in an atmosphere of argon with 6 percent hydrogen.
	www.ieer.org /latest/gallium.html (851 words)

	Hydride - Wikipedia, the free encyclopedia
		In main group element hydrides electronegativity of an element respective to hydrogen determines the compound to be either of the first two types.
		Ionic hydrides are usually used as reducing agents in synthetic chemistry, but they are too strongly basic and reactive to be used in pure form.
		Covalent hydrides behave as molecules with the weak London forces and hence are volatile at room temperature and atmospheric pressure.
	en.wikipedia.org /wiki/Hydride (980 words)

	Hydride (Site not responding. Last check: 2007-10-26)
		A Hydride is a chemical compound or form of a bond between hydrogen with a metal usually found in group 1 of the Periodic table, usually with a more electropositive element or group.
		Originally, the term hydride was reserved strictly for compounds containing hydride ions, but the definition has been broadened to all compounds involving hydrogen.
		An electropositive metal forms ionic hydrides whereas an electronegative element forms covalent hydrides; however some exceptions exist such as silane.
	bopedia.com /en/wikipedia/h/hy/hydride.html (659 words)

	Gallium (Site not responding. Last check: 2007-10-26)
		Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal.
		Gallium wets glass or porcelain and forms a brilliant mirror when it is painted on glass.
		Gallium readily alloys with most metals, and has been used as a component in low-melting alloys.
	www.scescape.net /~woods/elements/gallium.html (301 words)

	CHEM242 - 1999 Chapter 13 Course Notes (Site not responding. Last check: 2007-10-26)
		Gallium and Indium occur in traces in bauxite and all three are found in certain sulphite ores of other metals.
		The "hydroxides" of aluminum and gallium are amphoteric:
		Forms many hydrides and hydride anions which are polyhedral clusters: the boranes, carboranes and the borane anions.
	artsci-ccwin.concordia.ca /facstaff/A-C/bird/c242/notes_ch13-cwp.html (754 words)

	HUT-Physics, Bulletin board
		Gallium nitride is one of the most promising optoelectronic semiconducting materials.
		From the optical measurements we can conclude that the layers grown on the gallium polar side of the substrate are resistive, while the layer grown on the nitrogen polar side has a high free electron concentration, similar to the substrate.
		On the other hand, both gallium vacancies and larger open volume defects were found in the layer grown on the nitrogen polar side.
	www.fyslab.hut.fi /laboratory/Events/abs_old2002.html (2107 words)

	Wikinfo \| Hydride
		A hydride is a chemical compound of a hydrogen with other elements.
		In these, molecules of hydrogen dissociate and hydrogen atoms settle in the octahedral or tetrahedral holes in the metal lattice called the interstitial sites.
		Images, some of which are used under the doctrine of Fair use or used with permission, may not be available.
	www.wikinfo.org /wiki.php?title=Hydride (969 words)

	RARE EARTHS, SCIENCE, TECHNOLOGY, AND APPLICATIONS: II: Battery and Materials Chemistry
		Metal hydrides are a critical components of these devices, providing a non-mechanical method to compress the hydrogen gas.
		Less degradation of hydrogenation capacity after long cycles of hydriding- dehydriding was observed when substituted with both Al and Co. Vanadium is often considered as a hydride former, but when it was added to LaNi5 it was found that V occupied the B site.
		Hydriding characteristics of some AB5 alloys produced by high pressure gas atomization (HPGA) were examined during reactions with hydrogen gas, and In electrochemical cells.
	www.tms.org /Meetings/Annual-97/Program/Sessions/MPS8.html (790 words)

	Final Report on GR/K79475 (Site not responding. Last check: 2007-10-26)
		The original proposal was aimed at developing the chemistry of indium hydride complexes for both their fundamental interest and because of the significant applications potential they would possess.
		In order to examine the synthesis of similar compounds, alkyl indium complexes have been reacted with alkali metal hydrides with the surprising result that hydride bridged anionic species are formed (Scheme 1), even in the presence of an excess of the hydride source.
		After it was conceded that these ligands were not ideal for the stabilisation of indium hydrides, the remaining time in Townsville was fruitfully used to prepare a range of main group and transition metal complexes with these ligands, e.g.
	www.cf.ac.uk /chemy/staff/jones/grk79475/grk79475.html (1629 words)

	[No title] (Site not responding. Last check: 2007-10-26)
		The chemistry of aluminium and gallium hydride complexes has been widely studied.
		Until recently the field had not been extended to indium hydride complexes, supposedly because of the weakness of the In-H bond.
		We are specifically interested in developing the coordination chemistry of anionic gallium carbene analogues (see below) and the use of low oxidation state group 13 halides in organic synthesis.
	www.cf.ac.uk /chemy/staff/jones/further.html (381 words)

	Hydride (Site not responding. Last check: 2007-10-26)
		An electropositive metal forms ionic hydrides whereas an electronegative element forms covalent hydrides; however silane is on of the exceptions.
		+ 3 LiCl Water itself cannot serve as a medium for pure ionic hydrides or LAH because the hydride ion is a stronger base than hydroxide.
		If you received it electronically, such person may receive it electronically.
	hydride.kiwiki.homeip.net (698 words)

	Expert: Special Synthetic Chemistry Expert (Site not responding. Last check: 2007-10-26)
		He served as a consultant in the boron hydride fuels program and helped in the development of industrial procedures.
		In addition to his knowledge of boron hydrides, Expert has extensive experience working with the hydrides of aluminum and gallium.
		Expert is extremely knowledgeable in hydrogen chemistry, metal hydrides, NMR spectroscopy, and multinuclear NMR analytical chemistry.
	www.intota.com /viewbio.asp?bioID=603817&perID=108182 (626 words)

	Expert: Condensed Matter Physics Expert (Site not responding. Last check: 2007-10-26)
		He and his coworkers have now grown all 20 alkali halides as well as hydrides, cyanides, and a few metals.
		High purity and intentionally doped single crystals of alkali halides, hydrides and cyanides are grown by the Czochralski and Bridgman techniques under Expert's supervision.
		Expert's laboratory is probably the world's only source of single crystal lithium hydrides.
	www.intota.com /viewbio.asp?bioID=614724&perID=713124 (646 words)

	L1-L3 (Site not responding. Last check: 2007-10-26)
		The gallium hydride which was formed by the reaction between metal-Ga and hydrogen gas was used as the Ga source, and reacted with NH gas to grow GaN crystals on the sapphire (0001) substrate.
		Stable conditions for the synthesis of gallium hydride by the reaction of H
		As a result, gallium hydride is stable at about 1000°C which is a temperature commonly used for the growth of GaN.
	jjap.ipap.jp /link?JJAP/44/L1 (383 words)

	Energy Citations Database (ECD) - Energy and Energy-Related Bibliographic Citations
		Availability information may be found in the Availability, Publisher, Research Organization, Resource Relation and/or Author (affiliation information) fields and/or via the "Full-text Availability" link.
		BAND SPECTRA OF GALLIUM HYDRIDE AND GALLIUM DEUTERIDE
		The results of the analysis of the triplet-singlet intercombination system in the yellow wave length range of gallium hydride and deuteride are reported.
	www.osti.gov /energycitations/product.biblio.jsp?osti_id=4199868 (180 words)

	Netstep Forward Research News
		For the chemical vapor deposition of gallium-containing films, there is interest in developing nonpyrophoric, alternative precursors to trimethyl or triethyl gallium.
		Gallium hydride complexes that do not contain direct gallium-carbon bonds are attractive candidates.
		Bing Luo and Benjamin E. Kucera working with Professor Wayne L. Gladfelter have reported (Chemical Communications, advance article) a new gallium hydride that is stabilized by a tridentate amido-diamine ligand.
	www.chem.umn.edu /netstep/2005/june/22gladfelter.html (127 words)

	Chemistry : Periodic Table : gallium : compounds information
		For each compound, a formal oxidation number for gallium is given, but the usefulness of this number is limited for p-block elements in particular.
		The term hydride is used in a generic sense to indicate compounds of the type M
		The term hydride is used to indicate compounds of the type M
	www.webelements.com /webelements/elements/text/Ga/comp.html (200 words)

	What is a nitride (Site not responding. Last check: 2007-10-26)
		This is different from something like gallium nitrate where the anion is a polyatomic negative species that contains a nitrogen atom.
		We are able to grow this from a sodium melt at relatively low temperatures and pressures.
		The hydride anions (center of the octahedra) are separate from the nitride anions (lilac spheres)
	www.chem.cornell.edu /fjd3/nitride/display/what/what.htm (212 words)

	Products
		GaN is the compound semiconductor material used for the fabrication of blue spectrum (blue, green, and ultra violet (UV) and white) light emitting diodes (LEDs), laser diodes (LDs) and high-frequency/high-power transistors.
		While able to grow high quality thin GaN layers suitable for some device structures, due to low growth rate characteristics, these epitaxial methods fail to produce thick GaN films that are needed for more novel devices.
		With a growth rate from 20 to 100 times higher than that for MOCVD or MBE, the HVPE technology is the accepted cost-effective method for fabrication of GaN templates and freestanding GaN wafers.
	www.tdii.com /news/pType.htm (1025 words)

	References in Materials Research Society Symposium Proceedings (Site not responding. Last check: 2007-10-26)
		The Role of Impurities in Hydride Vapor Phase Epitaxial Grown Gallium Nitride
		Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
		Gallium Nitride Doped With Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes
	nsr.mij.mrs.org /refs/mrssp (1588 words)

	Chemistry : Periodic Table : gallium : compound data [gallium (III) hydride]
		Chemistry: WebElements Periodic Table: Professional Edition: Gallium: compound data [gallium (III) hydride]
		For each compound, and where possible, a formal oxidation number for each element is given, but the usefulness of this number is limited, especially so for p-block elements in particular.
		Copyright 1993-2007 Mark Winter [The University of Sheffield and WebElements Ltd, UK].
	www.webelements.com /webelements/compounds/text/Ga/Ga2H6-13572935.html (319 words)

	[No title] (Site not responding. Last check: 2007-10-26)
		GaN Epitaxial Wafers are the ideal substrates for GaN homoepitaxial growth and device manufacturing.
		Gallium Nitride Epitaxial Wafer consists of a thin undoped GaN epitaxial layer grown by hydride vapor phase epitaxy (HVPE) directly on (0001)Si face on-axis 6H-SiC or 4H-SiC substrate.
		GaN layers and SiC substrates are electrically conducting.
	www.marubeni-sunnyvale.com /gallium-nitride-wafers.html (1374 words)

	[No title]
		ATMI (Danbury, CT) is manufacturing gallium nitride (GaN) substrates using a process called hydride vapor phase epitaxy (HVPE).
		The company has already sold GaN substrates to major consumer elec-tronics manufacturers, has a contract with the Defense Advanced Research Projects Agency (DARPA) to explore radar applications, and is researching the benefits of use to the ultra-violet light-emitting diode (UV LED) industry.
		Using a process called hydride vapor phase epitaxy, ATMI is growing GaN boules and manufacturing GaN substrates, which are currently being sold to consumer electronics manufacturers.
	www.mdatechnology.net /update_article.asp?id=4002 (661 words)

	Publications by R. J. Molnar
		Goetz, W.; Romano, L. Johnson, N. Molnar, R. Electronic and structural properties of gallium nitride grown by hydride vapor phase epitaxy.
		Molnar, R. Brown, E. Goetz, W.; Romano, L. Johnson, N. The effect of growth parameters on the quality of GaN thick films grown by hydride vapor phase epitaxy.
		Ponce, F.,ed Materials Research Society Symposium Proceedings: Gallium Nitride and Related Materials; 1995 November 27; Boston, MA.
	www.parc.com /research/publications/results.php?author=601 (270 words)

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