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	Radio-Electronics.Com :: Summary of the Gunn Diode
		Gunn diodes are a form of semiconductor component able to operate at frequencies from a few Gigahertz up to frequencies in the region of 100 GHz.
		The frequency of the signal generated by a Gunn diode is chiefly set by the thickness of the active region.
		The Gunn diode is placed into the cavity along with the YIG which has the effect of reducing the effective size of the cavity.
	www.radio-electronics.com /info/data/semicond/gunndiode/gunndiode.php (866 words)

	Gunn diode - Biocrawler (Site not responding. Last check: 2007-09-16)
		An Gunn diode is a form of diode used in high-frequency electronics.
		In practice, this means a gunn diode has a region of negative differential resistance.
		Gunn diodes are therefore used to build oscillators in the 10 GHz and higher frequency range, where a resonant cavity is usually added to control frequency.
	www.biocrawler.com /encyclopedia/Gunn_diode (207 words)

	Gunn diode - Wikipedia, the free encyclopedia
		A Gunn diode, also known as a transferred electron device (TED) is a form of diode used in high-frequency electronics.
		In the Gunn diode, three regions exist: two of them are heavily N-doped on each terminal, with a thin layer of lightly doped material in between.
		Gunn diodes are therefore used to build oscillators in the 10 GHz and higher (THz) frequency range, where a resonant cavity is usually added to control frequency.
	en.wikipedia.org /wiki/Gunn_diode (807 words)

	Gunn Diode - Microwave Encyclopedia - Microwaves101.com (Site not responding. Last check: 2007-09-16)
		Gunn diodes have been around since John Gunn discovered that bulk N-type GaAs can be made to have a negative resistance effect.
		Gunn diodes have been a cheap source of microwaves ever since!
		Below is a picture of a Gunn diode oscillator for W-band.
	www.microwaves101.com /encyclopedia/gunndiode.cfm (299 words)

	Dual Gunn diode self-oscillating mixer
		According to the invention, it is possible to slave two self-oscillating Gunn diode cavities and inject in a signal for the purpose of mixing with the self-oscillation signal within the cavity.
		The self-oscillation of Gunn diode 200 is ordinarily accomplished with aid of biasing electrode 202, to which a biasing voltage of some +5 to +1 volts typically is applied by means of conductive rod 209 fed by a bias voltage applied through an inductive choke 208.
		For the functions of biasing the Gunn diode and outputting the IF signal both, a wire (331,332) is merely soldered to the top of the Gunn diode in each cavity, and led out to coax plugs (not shown) respectively where coax connectors can be located.
	www.nmbest.biz /scitechcatalog/fluorescent_air_data_measurement/dual_gunn_diode_self-oscillating_mixer.html (2969 words)

	Gunn diode patent invention
		The tapered shape of the Gunn diode (referred to as a mesa) is characteristic of the wet etching process, and arises because the top of the structure is exposed to the etchant for longer than the material at the bottom.
		A typical Gunn diode current is 600 mA at a voltage bias of 5.5 volts, but the length of the transit region may be a fraction of a millimetre so the voltage gradient developed across the region is in the range of Kilovolts per millimetre at which the formation of domains starts.
		It is necessary that the Gunn diode undergoes resonance at the fundamental as well, otherwise the resonance at the second or higher harmonic could not be supported, but means, such as a resonator, may be provided to hold the resonance at the fundamental, so that it is not transmitted.
	www.freshpatents.com /Gunn-diode-dt20061019ptan20060232347.php (1237 words)

	Gunn Diode Controller
		Changing the voltage across a Gunn diode causes the frequency and amplitude of its oscillations to shift.
		In the real world, the Gunn diode may be located up a mast or high on a wall where accessibility is poor and long cable runs would be needed.
		R103 and C104 appear to the Gunn diode as a 470 ohm shunt which helps reduce their tendency to oscillate in undesirable modes.
	www.atv-projects.com /html/gunn_diode_controller.html (1506 words)

	Gunn Diode Oscillator
		The negative differential impedance of the Gunn diode may be modeled by a complementary pair of JFETs, as shown in Figure 6.
		Gunn diode oscillator Representative agent who is responsible for any gunn diode oscillator the gunn diode oscillator national are as described on the gunn diode oscillator meant that those people who...
		Gunn diodes are negative-resistance diodes that are the basis of some microwave oscillators oscillator, electronic (os`?la't?r), electronic circuit...
	gunnoscillator.fopsoscillator.com /gunndiodeoscillator (745 words)

	Gunn - Wikipedia, the free encyclopedia
		Gunn High School, a high school in Palo Alto, California
		Gunn diode, a form of diode used in high-frequency electronics
		Clan Gunn, a Highland Scots clan of Norse origin
	en.wikipedia.org /wiki/Gunn (178 words)

	Thermoelectric compensation for voltage control devices - Patent 4097829
		The diode is inverted from its usual position in that the junction side is faced downward to place the junction electrode in contact with the Seebeck wafer.
		In the present invention, the heat generated in the varactor diode junction passes to the wafer to produce a voltage change that acts to correct the control voltage applied to the varactor, thereby compensating for the change in varactor capacitance characteristic with the change in temperature.
		In a Seebeck wafer, when heat is applied to the surface adjacent to the varactor diode junction, carriers in the wafer diffuse from the region at the interface with the varactor diode junction to the opposite side of the wafer.
	www.freepatentsonline.com /4097829.html (2272 words)

	Automotive Collision Avoidance Systems (ACAS) Program Final Report DOT HS 809 080
		Gunn diode based transceivers meeting the MMIC transceiver mechanical size targets were designed, fabricated, and tested.
		A change request to use a Gunn diode VCO transceiver as baseline in order to meet cost and performance targets and schedules for introductory volumes was presented and approved at the ACAS Third Quarter Review meeting.
		The Gunn transceiver was designed to be compatible with a MMIC receiver, although the first units used a planar microstrip discrete diode mixer circuit.
	www.nhtsa.dot.gov /people/injury/research/pub/ACAS/Ch3-3.htm (4064 words)

	Semiconductors.
		When a conventional pn diode is forward biased some of the majority carriers crossing the junction are neutralised by combination with majority carriers of opposite polarity.
		Others remain (as minority carriers) and, when the applied voltage is reversed, return across the junction in the form of a substantial pulse of reverse current which takes a significant time to decay to the normal value of reverse current.
		When such a diode is reverse-biased the intrinsic layer is depleted of carriers and the diode behaves as a capacitor.
	www.hills2.u-net.com /electron/semicond/semicond.htm (1520 words)

	[No title]
		The frequency of the Gunn diode is adjusted by altering the size of its tuned cavity using the microwave screw.
		Appendix 1 The Gunn Diode Oscillator A Gunn diode is a gallium arsenide (GaAs) diode with the doping of carrier impurity uniform throughout.
		The diode depends for its oscillations on a quantum-mechanical property: as the voltage across the diode is increased, the current increase linearly as one would expect in an ordinary resistor, but only at first (see figure 3).
	www.physics.hku.hk /~phys3431/322_Microwave_Measurement_2002.doc (3326 words)

	Microwave Activities - AA5TB
		A Gunn diode oscillator is used for both the transmitter and the receiver 1st local oscillator.
		RF output is coupled from the Gunn diode's waveguide to semi-ridgid coax, then to the circular waveguide.
		On receive the RF is mixed with the 1st LO from the Gunn diode in a mixer diode that is installed in the waveguide coming from the Gunn diode's cavity.
	www.aa5tb.com /xband.html (524 words)

	Gunn Diode Review
		Gunn diode oscillators are used for many purposes and typical applications include local...
		As the bias across the Gunn diode is increased...
		Combiners were developed using two Gunn diodes in dielectric waveguide (image line) oscillator circuits.^The optimum configuration consisted of each Gunn diode being imbedded in a separate...
	www.transistorsdiodes.com /gunn-diode.html (355 words)

	uwdiode.doc
		C = capacitance of the diode at voltage, V. = capacitance of the diode at voltage, V= 0.
		When a diode is forward biased, it stores charge and as the diode is reverse biased, the diode ceases to conduct.
		In the case of a diode used as a mixer, the RF and Local Oscillator inputs are given as shown in the figure.
	www.avtechpulse.com /faq.html/IV.28/uwdiode.html (2935 words)

	Wisewave Technologies, Inc.
		OGM Series mechanically tuned Gunn oscillators combine proprietary circuit design capability and experience with either GaAs or InP Gunn diode to cover the frequency range of 18 to 110 GHz in seven waveguide bands.
		OGR and OMR series Gunn oscillator bias regulator and regulator/modulator are developed as a low noise DC regulator/ modulator for Gunn diode oscillators.
		OGV series varactor tuned Gunn oscillators combine proprietary circuit design capability and experience with either GaAs or InP Gunn diode to cover the frequency range of 18 to 110 GHz in seven waveguide bands.
	www.wisewave-inc.com /product/product.php?Category=Oscillator (1228 words)

	Radar Basics
		The Gunn Oscillator is a source of microwave energy that uses the bulk-effect, gallium-arsenide semiconductor.
		The basic frequency of a gunn oscillator is inversely proportional to the transit time of a domain across the semiconductor.
		The gunn oscillator can deliver continuous power up to about 65 milliwatts and pulsed outputs of up to about 200 watts peak.
	www.radartutorial.eu /17.bauteile/bt12.en.html (308 words)

	ELECTRON SPIN RESONANCE
		Generally, the power emitted by a typical Gunn diode for ESR experimentation is of the order of 5-10mW, although with the use of a 100mW unit the resonance signal is considerably easier to find and observe.
		By placing the ferrite attenuator between the source and the waveguide, the coupling between the source and the load is reduced so that the operation of the Gunn diode is not greatly affected by changes in the load conditions.
		Diode Detector The microwave detector is the commonly used “crystal diode,” which consists of a silicon crystal in contact with a fine tungsten wire, known as a “cat's whisker.” In certain regimes, the DC voltage output of the detector circuit is proportional to the incident microwave power.
	class.phys.psu.edu /p559/experiments/html/Esr_long_2004.htm (4875 words)

	[No title] (Site not responding. Last check: 2007-09-16)
		A mixer diode is mounted outside the cavity, which mixes the outgoing and incoming microwaves.
		Variable DC supply voltage to the Gunn diode is regulated by the LM317T and associated components.
		To read Gunn diode current in mA, measure the DC voltage drop across the 10 ohm resistor, and multiply by 100.
	www.altair.org /projects/hawgplex.txt (632 words)

	Microwave Receiver Transmitter Gunn Diode
		The Gunn diode transmitter is a low-voltage source of linearly-polarized...
		It transmits by generating microwave energy in its metal cavity by the action of the gunn diode...
		The companion instrument to the Transmitter, this unit utilizes a Schottky diode mounted in a die cast microwave cavity and horn.
	www.thehomeappliance.info /microwave-receiver-transmitter-gunn-diode.php (254 words)

	Negative resistance element circuit combinations
		However, in the Ezaki diode, since the negative resistance is obtained at the P-N junction of the semiconductive substances, the negative differential conductivity is exhibited only for a specific polarity, and because of the capacitance existing at the junction point, the element cannot be used at frequencies higher than 10 GHz.
		The so-called Gunn diode is also known, wherein a semiconductive material such as GaAs which has two valleys in its conduction band is employed.
		The Gunn diode, however, does not show a negative resistance characteristic except at a particular frequency determines by the electron transit time.
	www.sacnewsmonthly.com /invent/fermentation/negative_resistance_element_circuit_combinations.html (2379 words)

	Wisewave Technologies, Inc.
		OGM Series mechanically tuned Gunn oscillators combine proprietary circuit design capability and experience with either GaAs or InP Gunn diode to cover the frequency range of 18 to 110 GHz in seven waveguide bands.
		OGR and OMR series Gunn oscillator bias regulator and regulator/modulator are developed as a low noise DC regulator/ modulator for Gunn diode oscillators.
		OGV series varactor tuned Gunn oscillators combine proprietary circuit design capability and experience with either GaAs or InP Gunn diode to cover the frequency range of 18 to 110 GHz in seven waveguide bands.
	wisewave-inc.com /product/product.php?Category=Oscillator (1228 words)

	MGEF: A New First for 47GHz
		The Gunn sources were retuned to just inside the ham band and spaced 70MHz from each other to allow for a 70MHz IF to be used in a Gunnplexer style configuration.
		Located between the Gunn source and the dish feed of each station is a waveguide circulator with a diode detector mount attached to the third port of the circulator.
		If the Gunn sources had varactor diodes mounted inside the waveguide cavity, the varactor could be modulated with a separate supply voltage.
	www.mgef.org /47ghz.htm (1782 words)

	Local Oscillator
		The local oscillator chain consists of a Gunn oscillator, an isolator, a harmonic mixer, a waveguide attenuator, a tripler, and a dielectric lens.
		The micrometer perpendicular to the waveguide axis controls the the size of the Gunn diode cavity, and thus controls the oscillator frequency.
		The other micrometer driven backshort controls the match of the diode to the waveguide and is often referred to as the power backshort.
	soral.as.arizona.edu /230GHz/node6.html (277 words)

	[No title]
		From the growth factor equation, it is evident that the Gunn diode design depends on L and ND.
		Ultimately, the frequencies demonstrated by Gunn diodes are caused by their negative differential resistance and mobility properties.
		The frequency of a Gunn diode is mainly controlled by the thickness of the active region.
	www-scf.usc.edu /~dequinto/GunnDiode.doc (1995 words)

	Gunn Diode Oscillator (Site not responding. Last check: 2007-09-16)
		The aim of this project is to design and build an oscillator system, containing four Gunn diodes, which produces an output signal of 100 mW at 87 GHz using power combining.
		Construct a demonstrator based on four Gunn diodes with a target performance of 100 mW at 87 GHz.
		Investigate optimisation of the performance through the control of the supply voltages to the individual diodes.
	gunn.winterwolf.co.uk (88 words)

	Gunn Oscillators
		The diode is said to be biassed into the negative resistance region.
		Gunn oscillators are widely used in the microwave to Terahertz region.
		It can't oscillate at a higher frequency because the diode is ‘too slow’, hence we ensure a single-valued oscillation frequency.
	www.st-andrews.ac.uk /~www_pa/Scots_Guide/RadCom/part5/page2.html (1035 words)

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