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Topic: Heterostructure

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	US patent 5,408,107
		Heterostructure barrier quantum well device with a super-lattice structure of alternating lightly doped and heavily doped spacer layers having multiple, stable current-voltage curves extending continuously through zero bias at ambient temperature.
		In hole-based semiconductor devices the super-lattice structure is on the anode side of the heterostructure barrier; In electron majority carrier devices the super-lattice structure is on the cathode side of the heterostructure barrier.
		On the cathode side of the heterostructure is a super-lattice structure 16 of alternating lightly doped and heavily doped spacer layers 18, 20 and 22.
	weewave.mer.utexas.edu /MED_files/MED_research/QSD_RTD_folder/QSD_patent.html (4064 words)

	United States Patent Application: 0040218259
		The method of claim 45, wherein forming the heterostructure comprises forming a p-i-n heterojunction structure including an p-epilayer and an n-epilayer, and wherein providing the heterostructure with electrical contacts comprises attaching a p-contact electrode attached to the p-epilyer and an n-contact electrode to the n-epilayer.
		The method of claim 58, wherein forming the heterostructure comprises forming a waveguide core using a first type material and a substrate using a second type material, wherein the first type material and the second type material are different type materials each selected from erbium-doped GaN and erbium-doped GaN alloys.
		The method of claim 58, wherein forming the heterostructure comprises forming a p-i-n heterojunction structure including an p-epilayer and an n-epilayer, and wherein providing the heterostructure with electrical contacts comprises attaching a p-contact electrode attached to the p-epilyer and an n-contact electrode to the n-epilayer.
	appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=/netahtml/PTO/srchnum.html&r=1&f=G&l=50&s1="20040218259".PGNR.&OS=DN/20040218259&RS=DN/20040218259 (8698 words)

	Double heterostructure light-emitting semiconductor device - Patent 4625223
		A double heterostructure light-emitting semi-conductor device includes a p-GaAs substrate having a first electrode formed on one surface and a current confining layer on the other surface; a confined current conduction layer; and a light-emitting layer structure formed on the current confining layer and the confined current conduction layer.
		A double heterostructure light-emitting semiconductor device according to claim 2, wherein said confined current conduction layer is formed of said first conductivity type GaAs.
		It is an object of the present invention to provide a double heterostructure light-emitting semiconductor device capable of decreasing a resistance to a current flowing across a light-emitting layer structure, decreasing a voltage applied between electrodes, and outputting high intensity spot-shaped light beams.
	www.freepatentsonline.com /4625223.html (2586 words)

	Silicon-Germanium Epitaxial Core-Shell Nanowire Heterostructure Devices
		Semiconductor heterostructures are central to the planar semiconductor industry since they enable the passivation of interfaces and the generation of devices with diverse function.
		We demonstrate the synthesis of silicon and germanium core-shell and multi-shell nanowire heterostructures using a chemical vapor deposition (CVD) method that is applicable to a variety of nanoscale materials.
		The generality of the radial heterostructure fabrication method was explored with the growth of several core-multi-shell structures, including a high-performance coaxially-gated p-channel field effect nanowire transistor.
	www.nsti.org /Nanotech2003/showabstract.html?absno=457 (199 words)

	Conversation with Zhores I. Alferov, p. 4 of 5
		First of all, it became double heterostructure laser, and it was at the time of the burst of fiber optical communications system.
		Then it was lasers became the needle in a CD, then on the base of heterostructure, it had been done not by us but nevertheless it was based on our research and our structures, ham transistor, which is the main element in cell phones.
		The last explanation I can say you, is that the heterostructure is for what I got the Nobel Prize." But she had some consultation, returned and said, "You're right in this [place on the] form but not right in this one.
	globetrotter.berkeley.edu /people5/Alferov/alferov-con4.html (1784 words)

	Double-channel planar heterostructure semiconductor laser - Patent 4597085
		Buried heterostructure semiconductor lasers have various features such as low oscillation threshold, linear injection current to light output characteristic, stable fundamental lateral mode operation and high-temperature operation capability.
		It is therefore an object of the present invention to provide a double-channel planar heterostructure semiconductor laser which is excellent in its high frequency response characteristic, performance and reliability due to its improved current confinement structure.
		For example, the structure described may be combined with an oxide film stripe electrode structure or a stripe electrode structure in which the cap layer 9 is made n-type for selective diffusion, with a view to additionally enhancing the high frequency characteristic.
	www.freepatentsonline.com /4597085.html (1993 words)

	Heterostructure Microwave Monolithic Integrated Circuits
		The objectives of the Microwave Monolithic Integrated Circuit's (MMIC's) activity are the study and exploration of heterostructures such as InAlAs/InGaAs for the realization of integrated functions at millimeter-wave frequencies.
		Circuit types studied under the heterostructure MMIC projects include amplifiers, oscillators, multipliers, mixers, attenuators and phase-shifters.
		Development of InAlAs/InGaAs submicron heterostructure MMIC's with state-of-the-art characteristics.
	www.eecs.umich.edu /dp-group/developments/MMICs.html (625 words)

	Lightwave - Bookham intros <I>in-situ</I> etch process for uncooled directly modulated ...
		Power-efficient uncooled directly modulated lasers with extended reach are an important class of communications laser for which buried heterostructures are essential, as these structures mitigate the effects of thermally induced chirp and power rollover that adversely impact laser performance.
		When the buried heterostructure is subsequently regrown on the material surface, any etch damage or impurities that remain at the surface can introduce a leakage current that increases the laser threshold current during device operation and degrades the laser's long-term reliability.
		Overgrowth is performed immediately on the clean freshly etched surface, thereby preventing the surface contaminations and oxidation that can occur in the standard process of using an external etcher to which the material has to be transferred at the risk of damage and contamination.
	lw.pennnet.com /Articles/Article_Display.cfm?Article_ID=170191&CFID=89005&CFTOKEN=11000946 (794 words)

	Electroabsorption spectroscopy on AlGaN heterostructure devices (invited talk)
		For example, in wurtzite InGaN/GaN heterostructures, large internal fields exist due to strain-induced piezoelectric fields and differences in the spontaneous polarization.
		These internal fields have been discussed in many theoretical and experimental publications but reliable values for these fields are still lacking and their impact on light emitting devices is still debated.
		The field induced absorption changes as well as the field dependent absorption spectra have been measured for various samples with a quantum well thickness ranging from 4nm to 20nm.
	www.parc.xerox.com /research/publications/details.php?id=4915 (403 words)

	Journal of Electronic Materials: InAsSb/InTlSb superlattice: A proposed heterostructure for long wavelength infrared ...
		A novel superlattice (SL) heterostructure, comprising of InTlSb well and InAsSb barrier lattice matched to InSb, is proposed for long wavelength 8-12 (mu)m detectors.
		Energy band calculations have been made with and without consideration of strain for the heterostructure compositions y = 0.07 and x = 0.07, corresponding to the SL band gap in the wavelength region of 10 (mu)m.
		As the material parameters for TlSb is not well established, many of the physical parameters needed for the energy band computation of the heterostructures such as band offsets and effective masses were estimated from the comparison of InTlSb with HgCdTe system.
	www.findarticles.com /p/articles/mi_qa3776/is_199704/ai_n8774627 (1069 words)

	Rimberg Group
		The RF-SET can be used to monitor the motion of individual electrons on and of the dot in a time as short as one microsecond.
		The enviromental impedance seen by the tunnel junction is determined by arrays of quantum point contacts on either side of the tunnel barrier.
		The electron spin of a quantum dot in such a heterostructure is expected to show very long coherence times, making them good candidates for quantum information processing.
	www.dartmouth.edu /~rimgroup/photos.html (287 words)

	Richard A. Kiehl
		He was a leading contributor to heterostructure device and circuit research, particularly field-effect transistor and resonant tunneling devices.
		He lead the phase of the Bell Labs project on heterostructure field-effect transistors that resulted in the first demonstration of a functional integrated circuit in this technology.
		He carried out a wide range of studies aimed at exploring the potential of heterostructure- based complementary FET circuits, including bandgap engineering for p-channel devices, vertical integration of complementary devices, and fabrication methods for Group III-V CMOS circuitry.
	www-ee.stanford.edu /~kiehl/bio.html (780 words)

	High-Speed Heterostructures Devices (Site not responding. Last check: 2007-10-29)
		Fuelled by rapid growth in the communications industry, compound heterostructures and related high-speed semiconductor devices are spearheading the drive toward smaller, faster and lower-power electronics.
		This book is concerned with the underlying physics of heterostructures as well as practical analytical techniques for modeling and simulating these devices.
		Emphasis is placed on heterostructure devices of the present and of the immediate future such as the MODFET, HBT and RTD.
	www.ece.osu.edu /~roblin/cupbook/contents.html (198 words)

	Quantum Hall effect -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-10-29)
		The link between exact quantization and gauge invariance was subsequently found by (additional info and facts about Robert Laughlin) Robert Laughlin.
		The fractional effect was discovered in 1982 by (additional info and facts about Daniel Tsui) Daniel Tsui and (additional info and facts about Horst Störmer) Horst Störmer, in experiments performed on (additional info and facts about gallium arsenide) gallium arsenide (additional info and facts about heterostructure) heterostructures developed by Arthur Gossard.
		The effect was explained by Laughlin in 1983, using a novel quantum liquid (Any distinct time period in a sequence of events) phase that accounts for the effects of interactions between electrons.
	www.absoluteastronomy.com /encyclopedia/q/qu/quantum_hall_effect.htm (488 words)

	One-dimensional thinking led by European researchers
		One-dimensional heterostructures could be used to build smaller lasers and high-speed transistors.
		They are also the first group to evaluate the heterostructure energy band diagram properties of a 1-D system.
		The team claims that the new technique could offer down-scaled heterostructure electronics and photonic devices, such as heterostructure bipolar transistors, double-barrier resonant tunnelling devices and ultra small semiconductor quantum dot lasers.
	www.commsdesign.com /printableArticle?articleID=19203080 (285 words)

	Journal of Electronic Materials: High mobility electron heterostructure wafer fused onto LiNbO(3)
		An (Al,Ga)As heterostructure consisting of a 10 nm wide GaAs single quantum well and an optimized AlAs/GaAs type-II-superlattice barrier is fused onto a new LiNbO^sub 3^ substrate by epitaxial lift-off and subsequent wafer bonding.
		The interfaces obtained by wafer bonding after epitaxial lift-off have often a less perfect geometry, since high-temperature thermal treatment cannot be performed for dissimilar systems.
		We have combined an (Al,Ga)As heterostructure with LiNbO^sub 3^ using epitaxial lift-off with subsequent wafer fusion.
	www.findarticles.com /p/articles/mi_qa3776/is_200107/ai_n8957763 (683 words)

	[No title] (Site not responding. Last check: 2007-10-29)
		This was the second conference in the series, and was sponsored by the IEEE Electron Devices Society, and the Air Force Office of Scientific Research, Asian Office of Aerospace Research and Development (AFOSR/AOARD), in cooperation with the Japan Society of Applied Physics, and the Institute of Electronics, Information, and Communication Engineers (IEICE).
		This was a fairly applied conference with multiple mentions of wireless communications and collision avoidance radar applications for the devices discussed.
		The topics covered were microwave and millimeter wave applications of heterostructure devices, SiGe devices, manufacturability and reliability, wide band-gap devices, and power device technologies.
	www.tokyo.afosr.af.mil /OldReports/9609.html (3008 words)

	Session R15 - Semiconductor Heterostructure: Electronic Properties.
		Our MST analysis is a significant refinement over purely empirical fitting schemes employed in previous pressure-PL studies of heterostructures.
		In the present work we explore the spin configuration and spin transition of a Fermi system by means of geometric resonance in tilted magnetic fields.
		We achieve a modulation period (a) as small as 1000Å\ on a square mesa of large area 1mm\times1mm.
	flux.aps.org /meetings/YR97/BAPSMAR97/abs/S5140.html (2128 words)

	CQD: Publications
		Razeghi and H. Mohseni, “Miniaturization: enabling technology for the new millennium,” International Conference on Solid State Crystals, October 9-13, 2000, Zakopane, Poland, SPIE Proceedings — Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, Vol.
		J.S. Wojkowski, H. Mohseni, J.D. Kim, and M. Razeghi, “Demonstration of InAsSb/AlInSb Double Heterostructure Detectors for Room Temperature Operation in the 5-8 µm Wavelength Range,” SPIE Conference, January 27-29, 1999, San Jose, CA, Proceedings - Photodetectors: Materials and Devices IV, Vol.
		Mobarhan, C. Jelen, E. Kolev, and M. Razeghi, “GaInAsP/InP 1.35 µm Double Heterostructure Laser Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition,” Journal of Applied Physics 74 (1), p.
	cqd.ece.northwestern.edu /pubs.html (11599 words)

	ECE 236A: Semiconductor Heterostructure Materials
		Fall 2005, Professor Ed Yu This course provides an in-depth discussion of the basic structure, electronic, and optical properties of semiconductor heterojunction interfaces and semiconductor heterostructures.
		It is intended primarily for graduate students in electrical engineering, applied physics, materials science and engineering, and related fields.
		Electron transport in semiconductor heterostructures; analysis of perpendicular electron transport; transfer matrix approach.
	nanolab.ucsd.edu /class/ece236a (1705 words)

	HETEROSTRUCTURE THERMIONIC COOLERS (Site not responding. Last check: 2007-10-29)
		DESCRIPTION: Scientists at the University of California have developed a new breed of thermoelectric coolers.
		These highly efficient coolers operate using thermionic emission in heterostructures of materials such as AlGaAs, InGaAsP, or SiGe.
		Evaporative cooling is achieved by selective emission of hot electrons from anode to cathode over a barrier layer.
	research.ucsb.edu /policy/tech/1999-144_et_al__Heterostructure_Thermionic_Coolers_files/1999-144_et_al___Heterostructure_Thermionic_Coolers.htm (228 words)

	High speed composite p-channel Si/SiGe heterostructure for field effect devices (US6350993) (Site not responding. Last check: 2007-10-29)
		Method for making low defect density semiconductor heterostructure and devices made thereby
		Thin film transistors and method of promoting large crystal grain size in the formation of polycrystalline silicon alloy thin films
		US20020125475A1 issued 2002-09-12 High speed composite p-channel Si/SiGe heterostructure for field effect devices
	www.delphion.com /details?pn=US06350993__ (494 words)

	Compound Semiconductor - Events - European Workshop on Heterostructure Technology (HETECH)
		This 13th European Heterostructure Technology workshop will follow the format of previous one: it is intended to bring together scientists, engineers and post-graduate students working on one side in the field of heterostructure and related device technology and on the other microsystems, nano- and bio- technology.
		Invited and contributing papers will be presented during this three-day meeting, detailing latest results.
		Despite the European character of the workshop series, interested researchers from all over the world are also invited to attend.
	www.compoundsemiconductor.net /events/4899 (117 words)

	PARC 2001 Publications
		Kiesel, P. ; Renner, F.; Kneissl, M. Johnson, N. ; Doehler, G. Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes.
		Van de Walle, C. Point defects and impurities in III-nitride bulk and thin film heterostructures.
		Van de Walle, C. Strategies for controlling the conductivity of wide-band-gap semiconductors.
	www.parc.com /research/publications/results.php?year=2001 (5381 words)

	Institute for Microstructural Sciences: 2003 Publications
		Dixon-Warren, “Scanning Differential Spreading Resistance Microscopy on an Actively Driven Buried Heterostructure Multi-Quantum-Well Laser,” IEEE Journal of Quantum Electronics, 40, 865-870, (2004).
		C.E. Martinez, N.M. Stanton, A.J. Kent, M.L. Williams, I. Harrison, H. Tang, J.B. Webb, J.A. Bardwell, “Hot electron energy relaxation in AlGaN/GaN heterostructures”, Semicond.
		Dixon-Warren, “Direct observation of electron over barrier leakage in actively driven buried heterostructure multi-quantum-well lasers,” SPIE Proceedings (Photonics North, invited talk) vol.
	ims-ism.nrc-cnrc.gc.ca /pubs/pubs_e.html (4991 words)

	Suntrans US Russia Business Solutions and Si-TECH (Site not responding. Last check: 2007-10-29)
		How changes in chemistry can influence the MOCVD of metals K.-H. Dahmen, ACS, April 2-6 Anaheim CA 1995, (invited lecture)
		Heterostructure YBa2Cu3O7-x/CeO2/Al2O3 prepared by MOCVD, I..E. Graboy, P.I. Vakhutinsky, Yu.Yu Erokhin, A.R. Kaul, K.-H. Dahmen, MRS April 17-21 San Franciso 1995 (poster)
		Heterostructure YBa2Cu3O7-x/CeO2/Al2O3 prepared by MOCVD, I..E. Graboy, P.I. Vakhutinsky, Yu.Yu Erokhin, A.R. Kaul, K.-H. Dahmen EURO CVD 10, Venice Sept 10-15 (1995).
	www.suntransinc.com /resources.html (3188 words)

	(WO 02/13272) ANTIMONY-BASED HETEROSTRUCTURE VARACTOR DIODE WITH BANDGAP ENGINEERED QUANTUM WELL ELECTRODES ... (Site not responding. Last check: 2007-10-29)
		ANTIMONY-BASED HETEROSTRUCTURE VARACTOR DIODE WITH BANDGAP ENGINEERED QUANTUM WELL ELECTRODES
		Functionally the new diode replaces the conventional heterostructure barrier varactor diode.
		Two important features of the antimony-based quantum well heterostructure barrier varactor are; first: an aluminium antimonide/aluminium-arsenic-antimonide heterostructure barrier and second: a bandgap-engineered, triangular quantum well cathode and anode.
	www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=02/13272.020425 (171 words)

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