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Topic: HgCdTe

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	A CdTe Passivation Process for Long Wavelength Infrared HgCdTe Photo-Detectors Journal of Electronic Materials - Find ...
		HgCdTe surface passivation is scientifically and technologically challenging due to a number of critical issues including the problem of electrically active defect formation in the interface region resulting from the nonstoichiometric, contaminated, or damaged surface prior to or during passivation process.
		With the maturity of HgCdTe epitaxial growth technology by MBE, third generation infrared detectors such as multicolor photodiodes, high operating temperature detectors (hot), avalanche photodiodes (APDs), and very long wavelength infrared (VLWIR) photodiodes are being researched and fabricated.
		To mitigate the problem of thermal expansion mismatch between HgCdTe detector array and silicon readout in hybrid focal plane arrays (FPAs), fabrication of monolithic HgCdTe FPA is also being pursued.
	findarticles.com /p/articles/mi_qa3776/is_200509/ai_n15350656 (798 words)

	Non isothermal method for epitaxially growing HgCdTe - Patent 4648917
		A method for epitaxially growing a layer of HgCdTe on a CdTe substrate wherein a HgTe source is spaced from the CdTe substrate a distance of between 0.1 mm and 10 mm, and the CdTe and HgTe are heated within a temperature range of between 500.degree.
		However, as the HgCdTe 15 growth process continues, this source of Cd and Te.sub.2 is attenuated due to substrate 5 being coated with HgCdTe 15 (growth on the back of the CdTe substrate 5 is much slower than on the side facing the HgCdTe layer 15).
		HgCdTe layers 15 grown on wafers polished by this technique have interface structures, as revealed by TEM, which are indistinguishable from layers grown on hydroplaned CdTe 5.
	www.freepatentsonline.com /4648917.html (5082 words)

	Mercury Cadmium Telluride Detectors
		HgCdTe is a ternary semiconductor compound which exhibits a wavelength cutoff proportional to the alloy composition.
		Responsivity and Noise vs. Frequency: The frequency response of HgCdTe detectors is related to the lifetime t of the electrons in the HgCdTe crystal, and t depends on material composition and operating temperature.
		J15D5 Series HgCdTe PC Detectors (2 to 5 µm): The J15D5 Series HgCdTe detectors peak at 5µm and are recommended for thermal imaging or infrared tracking applications which require liquid nitrogen cooled PC detectors.
	www.judsontechnologies.com /mercadm.htm (2210 words)

	Mercury(II) cadmium(II) telluride - Wikipedia, the free encyclopedia
		HgCdTe or Mercury cadmium telluride (also Cadmium Mercury Telluride, MCT or CMT) is an alloy of CdTe and HgTe and is sometimes claimed to be the third semiconductor of technological importance after Silicon and Gallium(II) arsenide.
		HgCdTe is the only common material that can detect infrared radiation in both of the accessible atmospheric windows.
		HgCdTe can be used as a heterodyne detector, in which the interference between a local source and returned laser light is detected.
	en.wikipedia.org /wiki/HgCdTe (1340 words)

	Etching of Mesa Structures in HgCdTe Journal of Electronic Materials - Find Articles
		Third generation infrared detectors such as multicolor photodiodes and high operating temperature detectors are being fabricated to meet the requirements of high end thermal imaging systems.
		Wet etching is preferred over dry etching of high density mesa structures in HgCdTe for a fine control over the etching in lateral and vertical directions.
		The polished HgCdTe surface was examined using Nomarski microscope and an ellipsometer (Gartner Scientific Inc., 6328 A).
	findarticles.com /p/articles/mi_qa3776/is_200511/ai_n15845709 (871 words)

	Mercury Cadmium Telluride Detectors (MCT - HgCdTe)
		The InSb detector responds to incident radiation from 1 to 5 µm while the HgCdTe detector responds to radiation from 6 to 13 µm (Fig.
		J19TE series detectors are high-quality HgCdTe photodiodes for use in the 500nm to 5.0um range.
		Advantages of Photovoltaic HgCdTe: Unlike the photoconductors commonly used in the 500nm to 5.5um region, HgCdTe photodiodes operate in the photovoltaic mode and do not require a bias current for operation.
	www.polytec-pi.fr /Judson/mercadm-e.htm (2473 words)

	Infrared imager (Site not responding. Last check: )
		The sequence of signals read from each HgCdTe detector site 50 is recursively averaged in its corresponding silicon averaging capacitor site 54, and the output from the silicon averaging capacitor is then provided to one of the output circuits shown on the left and right sides of the drawing.
		The HgCdTe is then polished, with half percent bromine-methanol on a pellon pad, down to 20 to 25 microns.
		After ion milling has cut all the way through the HgCdTe, the device, with its photoresist still intact, is spray etched in fresh 1/8% bromone- methanol in ten second stages until the via has been undercut to a total diameter of (in the presently preferred embodiment) 0.8 mils.
	www.stickebana.com /scitech/rotating_frame_zeugmatography/infrared_imager.html (7526 words)

	SPIE Proceedings Vol. 3436
		HgCdTe layers are converted to n-type and the carrier concentration, N$-D$/ is low 10$+15$/ cm$+$MIN@3$/ after Hg-vacancy annealing at 260 degrees Celsius.
		Abstract: HgCdTe is the most important material for LWIR detectors, and n on p type with a planar structure using ion-implantation technique is still the state-of-the-art for fabricating infrared focal plane arrays (IRFPAs).
		One of the main advantage of HgCdTe material is its ability to operate at high temperatures with high performance, and therefore to reduce the cooling constraints (size, cost...) by using small cryocoolers or by using thermoelectric coolers.
	www.spie.org /web/abstracts/3400/3436.html (13725 words)

	HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2-6 [mu]m ...
		The quality of involved HgCdTe layers has to be optimized in order to have a good photoluminescence response at 300 K. For this study, we used the knowledge we acquired in the field of MBE HgCdTe growth for infrared focal plane arrays (IRFPAs).
		HgCdTe semiconductors appear to show the most attractive properties for emitting IR light between 3 and 5 [mu]m due to their interband recombination, which can be easily adjusted by controlling the cadmium concentration in the alloy.4 So, we can build an IR light source using HgCdTe material in a resonant cavity between two Bragg mirrors.
		The HgCdTe heterostructure is grown by molecular beam epitaxy (MBE) and the technological process includes YF^sub 3^-ZnS deposit in the form of Bragg mirrors in an electron beam evaporator.
	www.findarticles.com /p/articles/mi_qa3776/is_200307/ai_n9260977 (993 words)

	The OSIRIS User's Manual: HgCdTe Detector Array
		The array is a hybrid of a silicon multiplexor and an array of infrared sensitive (HgCdTe) detectors.
		The band gap energy of this HgCdTe is approximately 0.5 eV, smaller than Si, so this detector is sensitive to radiation with wavelengths as long as 2500 nm.
		The relatively small band gap energy also causes high dark current at relatively high temperatures and thus in the low count rate regime characteristic of astronomy it must be cooled to liquid nitrogen temperatures (~77 Kelvin).
	www-astronomy.mps.ohio-state.edu /~osiris/manual/array.html (699 words)

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