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	STMicroelectronics - IGBTs
		With the introduction of the latest generation of strip-based PowerMESH™ IGBTs, ST has expanded its product offer for a very large variety of applications including white goods, PDP, automobile electronic ignition, motor drive, light dimmers, induction cookers, high frequency electronic ballasts, HID drivers, UPS and welding equipment.
		"W" Series IGBTs: Ultra fast IGBTs for welding, PFC, lighting and high frequency applications.
		"S" series IGBTs for pre-heating ballast and light dimmer applications
	www.st.com /stonline/products/families/transistors/igbts/igbts.htm (187 words)

	IGBTs Basics
		This structure is quite similar to that of the vertical diffused MOSFET except for the presence of the p+ layer that forms the drain of the IGBT.
		The turn-on switching transients of IGBTs are very similar to MOSFETs since the IGBT is essentially acting as a MOSFET during most of the turn-on interval.
		A negative voltage bias is used to improve the IGBT immunity to collector-to-emitter dv/dt injected noise and reduce turn-off losses as shown in Fig.
	www.powerdesigners.com /InfoWeb/design_center/articles/IGBTs/igbts.shtm (1951 words)

	Why Opt for IGBTs in SMPS Applications?
		IGBTs, it is recommended to use a 15V gate drive with IGBTs in general, for the full current capability.
		The IGBT solution is to use conductivity modulation by injecting minority carriers into the drift region, greatly reducing the resistance to current flow as already discussed.
		The tail current of a NPT IGBT tends to be low in amplitude but long in duration — especially with high bus voltage.
	powerelectronics.com /mag/power_why_opt_igbts (2650 words)

	IGBTs - ON Semiconductor
		Ignition IGBT 20 A, 400 V, N-Channel DPAK
		Ignition IGBT 20 a, 350 V, N-Channel DPAK
		Ignition IGBT 20 A, 400 V, N-Channel TO-220
	www.onsemi.com /PowerSolutions/parametrics.do?id=805 (199 words)

	IGBTs and MOSFETs vie for applications - 4/29/1999 - EDN (Site not responding. Last check: )
		The IGBT was born in the early 1980s, the almost simultaneous brainchild of General Electric's research lab in Schenectady, NY, and RCA's research lab in Princeton, NJ.
		Thus, the IGBT is restricted to quasicomplementary output structures.
		IGBTs shine in high-voltage circuits, because their silicon efficiency (power-handling capability versus silicon area) is much higher than the silicon efficiency of MOSFETs.
	www.edn.com /article/CA56727.html (2997 words)

	NREL: Advanced Power Electronics - Thermal Management (Site not responding. Last check: )
		IGBTs are voltage-controlled power transistors that have higher current densities than equivalent metal-oxide semiconductor field effect transistors (MOSFETs).
		IGBTs are more cost effective in most high-voltage high-current, moderate frequency applications.
		High temperatures and high heat fluxes in IGBTs and capacitors decrease their lifetimes by accelerating failure mechanisms in materials, and reduce the reliability of the inverter by accelerating failure mechanisms in connections and interfaces.
	www.nrel.gov /vehiclesandfuels/powerelectronics/thermal_mangement.html (738 words)

	INSULATED GATE BIPOLAR TRANSISTORS (IGBT)
		IGBTs are advanced power control switches with very low control power required to drive them.
		Since IGBT does not have an inbuilt reference, the input voltage is used as a reference.
		IGBTs are faster and have superior drive and output characteristics to power bipolar transistors so they are used in high-voltage, high-current, moderate frequency applications.
	www.partminer.com /glossaryhtml/igbt.html (267 words)

	IGBT tutorial: Part 1 - Selection \| Industrial Control Designline
		An N-channel IGBT is basically an N-channel power MOSFET constructed on a p-type substrate, as illustrated by the generic IGBT cross section in Figure 1.
		It is true in fact that the on state voltage across an IGBT is always at least one diode drop.
		PT IGBTs are sometimes referred to as asymmetrical, and NPT as symmetrical.
	www.industrialcontroldesignline.com /howto/motorcontrol/197801505 (1145 words)

	IGBT - Insulated Gate Bipolar Transistors :: Joliet Technologies
		Today's inverters use Insulated Gate Bipolar Transistors (IGBTs) to switch the DC bus on and off at specific intervals.
		The design, the fabrication process, the packing assembly and the experimental results of discrete planar and vertical IGBT are studied and reported in this thesis.
		This parasitic structure causes the latch-up effect in IGBT that makes the current to be no longer controlled by the MOS gate.
	www.joliettech.com /igbt-insulated_gate_bipolar_transistors.htm (770 words)

	Insulated Gate Bipolar Transistor Selector Guide
		NTE's series of Insulated Gate Bipolar Transistors (IGBTs) combine the high input impedance and high speed characteristics of MOSFETs and the high conduction (low saturation voltage) characteristics of bipolar transistors.
		Consequently, the equivalent circuit and basic operating mechanism of IGBTs are the same as those of a MOS-input inverted Darlington transistor comprised of an N-channel enhancement MOSFET in its input stage and a PNP transistor on the output stage.
		IGBTs are constructed in such a way that first, the gate voltage is applied to form a channel and then the base current of the PNP transistor is supplied, letting the circuit turn on eventually as an IGBT.
	www.nteinc.com /Web_pgs/igbt.html (203 words)

	Calibration of the Numerical Simulations in the Design of High Temperature IGBTs
		It is widely recognised that IGBT design should rely on a competent use of numerical simulation tools not only for qualitative understanding of basic device physics, but for quantitative prediction of the device performance, sensitivity analysis and even yield prediction.
		The effect of the lateral doping profile, the mobility models, the reduction of the lifetime as a result of irradiation, the external resistance and the temperature are highlighted in comparison with the measured IGBT characteristics.
		Our steady state IGBT simulator is based on the solution of the Poisson equation and current continuity equations for electrons and holes [5].
	www.elec.gla.ac.uk /groups/dev_mod/papers/isps94/isps.html (1800 words)

	Press Release - Intersil Introduces Next Generation of Network Power Supply Management (15-Sep-2000) (Site not responding. Last check: )
		The SMPS II IGBTs are designed to increase power efficiency in the Phase-shifted Bridge Topology, dominant power supply architecture in the telecom industry.
		Insulated gate bipolar transistors (IGBTs) conduct high electrical currents with low losses and are capable of blocking high voltages in delivering power in various topologies.
		SMPS IGBTs increase efficiency by eliminating switching losses associated with slow turn-off times, enabling the devices to be implemented in higher speed (100 kHz and greater) switching applications.
	www.intersil.com /pr/shell/0,1091,207,00.html (658 words)

	EDN -- 03.01.96 MOSFETs and IGBTs differ in drive methods and protection needs
		The processing for MOSFETs and IGBTs is similar, and the devices use identical processing steps, except for substrate polarity.
		The base resistance, R, however, prevents the npn from turning on, and the IGBT's equivalent circuit reduces to that in Figure 1c.
		The drive requirements for IGBTs are similar to those for MOSFETs, in that both device types present high values of input capacitance.
	www.edn.com /archives/1996/030196/05df2.htm (1884 words)

	diyAudio Forums - IGBTs
		A IGBT is a MOSFET and a bipolar device etched on the same substrate.
		IGBTs are of little worth for a linear amplifier due to poor seconday breakdown specs, they are designed for low speed switching.
		If you like IGBT's that much, then psychology being what it is, provided it isn't downright rotten, you will probably enjoy the sound even more once you have these jiggers installed.
	www.diyaudio.com /forums/showthread.php?postid=92801 (584 words)

	diyAudio Forums Archive - IGBT amplifiers
		Most IGBTs have poor safe area for a linear (class AB) amplifier, and are too slow for anything but a subwoofer amp in class D. IGBTs are not slow.
		The IGBT or Insulated Gate Bipolar Transistor is indeed a hybrid MOSFET/BJT device.
		An IGBT is a device having a single die and an unique structure which combines the advantages of MOS "channel" effect and bipolar "charge storage" effect.
	www.diyaudio.com /forums/showthread/t-97551.html (1770 words)

	IGBTs utilize metal on polysilicon gate structure., Advanced Power Technology
		IGBTs are available in two die sizes for 600 V and one die size for 1200 V, with and without anti-parallel diodes, in 10 die package combinations.
		In addition, POWER MOS 7(TM) IGBTs are available co-packaged with a fast-recovery, antiparallel diode optimized for low reverse recovery charge, further enhancing performance in power switching applications.
		The POWER MOS 7(TM) IGBTs are available in two die sizes for 600 volts and one die size for 1200 volts, with and without anti-parallel diodes, in 10 die package combinations.
	news.thomasnet.com /fullstory/9852 (1133 words)

	Print Version-IGBTs reduce power dissipation up to 60% (Site not responding. Last check: )
		International Rectifier (IR) introduced four 600V insulated-gate bipolar transistors (IGBTs) that are said to reduce power dissipation in inverters by up to 60 percent, in motor control applications up to 2.5kW.
		and total switching energy of trench IGBTs are said to result in reduced power dissipation and higher power density in motion control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.
		IR reported that the IGBTs are designed to increase current density and can deliver up to 60 percent higher rms current in the same package compared to previous devices on the market.
	www.eetasia.com /ARTP_8800416627_499488.HTM (226 words)

	Piloting system for electric inverter - Patent 5859769
		The MOSFETs or IGBTs of respective arms of an electronic inverter are in series with SCRs or TRIACs triggered into conduction during intervals of intended conduction of the respective MOSFETs or IGBTs connected to the high level rectifier terminal.
		The output terminals are connected between the switches of the arms to the load and the arms are bridged between the direct current terminals of a rectifier network.
		The MOSFET transistors 1, 2, 3, 4 have respective piloting units 11, 12, 13, 14 which are conventional and form the requisite signals for controlling the MOSFETS 1, 2, 3, 4 in response to the signals from block 10.
	www.freepatentsonline.com /5859769.html (3465 words)

	Tesla Three sparks
		The two IGBTs are mounted physically as close together as possible and the emitter terminals are connected together using a thick and short jumper wire.
		This is the best time for turnoff because the current through the actual IGBT is zero and the voltage across it is zero too.
		I need this because the IGBT has to be driven with 30 volts or more, but a 555 can only give out 16 volts before it blows up.
	www.scopeboy.com /tesla/t3schem.html (858 words)

	IGBTs : INSULATED-GATE FIELD-EFFECT TRANSISTORS (Site not responding. Last check: )
		Although some specialized designs such as the so-called VMOS transistor have been designed to minimize this inherent disadvantage, the bipolar junction transistor is still superior in its ability to switch high currents.
		This way, there is extremely high current gain (since the insulated gate of the IGFET draws practically no current from the control circuitry), but the collector-to-emitter voltage drop during full conduction is as low as that of an ordinary BJT.
		Faster turn-off times for the IGBT may be achieved by certain changes in design, but only at the expense of a higher saturated voltage drop between collector and emitter.
	www.allaboutcircuits.com /vol_3/chpt_6/12.html (533 words)

	IGBTs <100A, Worldwide Market and Competitive Trends - Darnell.com
		The IGBT market can be segmented in a number of ways: by application area, by voltage/current ratings, by standard versus custom parts, by package style, by military versus non-military markets, and so on.
		The IGBTs which are the focus of this proposed study occupy the "medium-power" segment of the transistor market.
		The market for IGBTs rated for Under 100A is changing as a result of changes in end-use applications as well as improvements in IGBT technology itself.
	www.darnell.com /consulting/study.php?mc_id=17 (558 words)

	IGBTs Or MOSFETs: Which Is Better For Your Design?
		The increase in switching losses at the higher frequency eliminates the advantage that the IGBT had at high temperature when the switching frequency was lower.
		The choice of IGBT or MOSFET will vary from application to application, depending on the exact power level, the devices being considered, and the latest technology available for each type of transistor.
		In this particular scenario, the IGBT appears to be the device of choice.
	www.elecdesign.com /Articles/Index.cfm?ArticleID=7501&pg=2 (808 words)

	Powerex Insulated Gate Bipolar Transistor (IGBT) Modules-including Trench Gate and HVIGBTs
		Powerex Insulated Gate Bipolar Transistor (IGBT) Modules-including Trench Gate and HVIGBTs
		Powerex has committed its technical team to develop more user-friendly IGBT (Insulated Gate Bipolar Transistor) modules that provide more efficient operation, greater application ruggedness, and longer life.
		For more information on our IGBTs, see the technical library resources for IGBTs
	www.pwrx.com /summary/IGBT.aspx (156 words)

	IR Trench IGBTs Reduce Power Dissipation Up to 60% in Motor Control Applications
		Co-packaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage (VCE(ON)) and total switching energy(ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs.
		The combination of low VCE(ON) and ETS of trench IGBTs result in reduced power dissipation and higher power density in Motor Control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.
		The trench IGBTs, part of IR’s iMOTION integrated design platform, increase current density and can deliver up to 60% higher rms current in the same package compared to previous devices on the market.
	www.irf.com /whats-new/nr060413.html (267 words)

	Soanar Plus - High power, 150kHz IGBTs
		WARP2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and hence faster turn-off.
		The new SMPS NPT IGBTs handle as much as 50A in the TO-247 package, which is 85% more current capacity compared to IR's 600V MOSFET in the same package, and up to 20A in TO-220 package, or 18% more current capacity compared to IR's 600V MOSFET in a TO-220 package.
		No part of this material may be reproduced, translated, transmitted, framed or stored in a retrieval system for public or private use without the written permission of the publisher.
	www.ferret.com.au /articles/cd/0c0142cd.asp (258 words)

	Eliminating Turn Off Losses in IGBTs (Site not responding. Last check: )
		The solution there was to provide a reverse bias to the base drive of the transistor to actively remove this charge during turn off.
		Unfortunately the Landlord is more drunk than I am and has to go onto the interwank to blither at other people so I'll wap this up on the server and get back to some more words and a 'real life' implementation in a while.
		So, assuming that is really right, all we have to do to get better performance out of our IGBT at turn off is knock its current down to zero minus a bit and then let it go on its merry way.
	www.genomerics.org /patent/patent.html (1206 words)

	Re: The OLTC IGBTs (Site not responding. Last check: )
		Original poster: "Terry Fritz" Hi Ken, MicroSim does not have a nice IGBT model (free version) so I fake a few things in the MicroSim schematics.
		The data sheet for my IGBTs is at: http://hot-streamer-dot-com/temp/irg4pf50wd.pdf FETs have "intrinsic" diodes due to their design.
		They either use snubber circuits or add a big diode external to the IGBT (but in the same plastic package.
	www.pupman.com /listarchives/2002/August/msg01519.html (206 words)

	IGBTs aim for induction heating applications: News from Ixys Semiconductor
		Design of IGBTs for specific performance criteria requires a compromise between saturation voltage and switching speed, the main contributors to power dissipation in power switches.
		These IGBTs use Ixys' proven punchthrough (PT) technology, with the design for switching speed versus saturation voltage selected to provide the best compromise possible between minimising the conduction losses generated by saturation voltage and the turn-off switching losses largely driven by switching speed.
		The diode provided in these IGBTs for induction heating were selected to meet the needs of designers for these applications, while minimising the additional cost and the resulting price to end customers.
	www.electronicstalk.com /news/ixy/ixy102.html (532 words)

	Re: IGBTs and CW Tesla Coils (Site not responding. Last check: )
		Original poster: "jimmy hynes by way of Terry Fritz " igbts could be used in low freq.
		he was planning to run it at 6khz i think, and the data sheet on the igbts he is using says they could switch at frequencys up to 100khz.
		im pretty sure a sstc would be a more efficient use of the igbts.
	www.pupman.com /listarchives/2002/August/msg01164.html (221 words)

	[No title] (Site not responding. Last check: )
		The new Co-Pack IGBTs are optimised for appliance motor-drive applications such as variable-speed fans, blowers, refrigeration compressors and washing machine pumps and agitators.
		The new ultra-fast Co-Pack IGBTs are capable of switching at speeds up to 20 kHz in hard-switching applications without any compromise in efficiency, and offer the most cost-effective solution for frequencies in the 8-20 kHz range.
		The 600V IGBTs are co-packaged with HEXFRED ultra-fast, ultra-soft recovery anti-parallel diodes.
	www.eba.com.hk /newshome.asp?newsid=982 (568 words)

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