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Topic: IGBT transistor

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	IGBT :: Blocks (SimPowerSystems)
		The turnoff characteristic of the IGBT model is approximated by two segments.
		The IGBT block cannot be connected in series with an inductor, a current source, or an open circuit, unless its snubber circuit is in use.
		The IGBT is switched on and off at a frequency of 10 kHz to transfer energy from the DC source to the load (RC).
	www.mathworks.com /access/helpdesk/help/toolbox/physmod/powersys/ref/igbt.html (666 words)

	Device for producing electricity having voltage-booster chopper circuit with an IGBT transistor - Patent 6713990
		A device according to claim 10, wherein the voltage is of 294 Volts between phases of the alternator at a rotational speed of a rotor of the alternator of 3000 rpm.
		This single transistor can be easily cooled by circulating a liquid, whereas in the known devices whose choppers comprise several transistors, this cooling is made more difficult on account of the number of transistors, which may not be mounted on a common cooler without posing insulation problems.
		In the exemplary embodiment described, the electronic breaker 15 consists of a single IGBT transistor, controlled by an electronic control circuit for switching at a constant switching frequency, this electronic control circuit being embodied in a conventional manner and not being represented for the sake of clarity of the drawing.
	www.freepatentsonline.com /6713990.html (2201 words)

	Spartanburg SC \| GoUpstate.com \| Spartanburg Herald-Journal
		The IGBT is used in medium- to high-power applications such as switched-mode power supply, traction motor control and induction heating.
		Large IGBT modules typically consist of many devices in parallel and can have very high current handling capabilities in the order of hundreds of amps with blocking voltages of 6,000 volts.
		An IGBT cell is constructed very similar to a n-channel vertical construction power MOSFET except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor.
	www.goupstate.com /apps/pbcs.dll/section?category=NEWS&template=wiki&text=IGBT_transistor (620 words)

	Igbt Schematic Dimmer On GlobalSpec
		Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate.
		Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
		Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT).
	igbt.globalspec.com /Industrial-Directory/igbt_schematic_dimmer (1255 words)

	Printer Friendly Version
		It provided the benefits of a solid-state solution for many applications, but its performance was limited by several drawbacks: It requires a high base current to turn on, it has relatively slow turn-off characteristics (known as current tail), and it's susceptible to thermal runaway due to its negative temperature coefficient.
		Certainly, the IGBT is the choice for breakdown voltages above 1000 V, while the MOSFET is for device breakdown voltages below 250 V. Device selection isn't so clear, though, when the breakdown voltage is between 250 and 1000 V. In this range, some components vendors advocate the use of MOSFETs.
		In this particular scenario, the IGBT appears to be the device of choice.
	www.elecdesign.com /Articles/Print.cfm?ArticleID=7501 (1629 words)

	Homemade 160W IGBT Audio Amplifier
		The circuit diagram of the IGBT amplifier is given in Fig.
		The combination of a transistor and an led creates a current source that is largely independent of temperature, since the temperature coefficients of the led and the transistor are virtually the same.
		Between these transistors is a 'variable zener' formed by T7 which, in conjunction with P2, serves to set the quiescent current of the output transistors.
	www.arky.ru /audio/shem/igbt/igbt.htm (1649 words)

	IGBT (Power System Blockset) (Site not responding. Last check: )
		The IGBT turns on when the collector-emitter voltage is positive and greater than Vf and a positive signal is applied at the gate input (g > 0).
		As the IGBT is modeled as a current source, it cannot be connected in series with an inductor, a current source, or an open circuit, unless a snubber circuit is used.
		The IGBT is switched on and off at a frequency of 10 kHz to transfer energy from the DC source to the load (RC).
	web.ece.umr.edu /computing/unix/software/matlab/toolbox/powersys/igbt.html (566 words)

	IGBTs Basics
		IGBTs feature many desirable properties including a MOS input gate, high switching speed, low conduction voltage drop, high current carrying capability, and a high degree of robustness.
		This structure is quite similar to that of the vertical diffused MOSFET except for the presence of the p+ layer that forms the drain of the IGBT.
		A negative voltage bias is used to improve the IGBT immunity to collector-to-emitter dv/dt injected noise and reduce turn-off losses as shown in Fig.
	www.powerdesigners.com /InfoWeb/design_center/articles/IGBTs/igbts.shtm (1951 words)

	IGBT (SimPowerSystems) (Site not responding. Last check: )
		The IGBT is simulated as a series combination of a resistor Ron, inductor Lon, and a DC voltage source Vf in series with a switch controlled by a logical signal (g > 0 or g = 0).
		The IGBT device is in the off state when the collector-emitter voltage is negative.
		The IGBT block contains a series Rs-Cs snubber circuit, which is connected in parallel with the IGBT device (between nodes C and E).
	www.weizmann.ac.il /matlab/toolbox/powersys/igbt.html (577 words)

	Semiconductor Primer, semiconductors 101
		In an NPN transistor the outer layers which form the emitter and collector are N type semiconductors doped with an impurity to supply extra electrons, while the thin base layer, typically only 1 micron thick, is a P type semiconductor doped with a different impurity which provides holes.
		The junction transistor is a current controlled device as opposed to a voltage controlled device and because the base-emitter diode is forward biased, the junction transistor has the disadvantage of a low input impedance which loads down the signal source connected to the transistor base.
		The output of one transistor is fed to the input of the second and the output of the second transistor is in turn fed back to the input of the first.
	www.mpoweruk.com /semis.htm (6039 words)

	Reliance Motor Lead Length White Paper-D7172-1
		IGBT PWM design, motor design, and installation guidelines will be discussed as solutions with several options presented to the engineer.
		The IGBT is basically a combination of a Metal Oxide Silicon Field Effect Transistors (MOSFET) and a bipolar transistor.
		Also the on-state voltage of an IGBT is similar to the on-state voltage of a Darlington bipolar transistor, and IGBTs are capable of switching at a higher frequency.
	www.reliance.com /prodserv/standriv/d7172/d7172.htm (3496 words)

	IGBT - Soft Switching Technology and Adjustable Frequency Drives
		Today's AFD technology with a pulse width modulation (PWM) microprocessor based algorithm, uses insulated gate bipolar transistor (IGBT) to generate the variable voltage and frequency required to control the speed of AC motor.
		AC is represented by a sine wave where the period of the wave is the inverse of its frequency and the height is equal to its magnitude When AC motors are connected directly to the utility line (across the line), they operate at a fixed speed.
		IGBTs were quickly adopted because of these advantages, and most low voltage AFD's use this technology today.
	www.joliettech.com /igbt-soft-switching_technology.htm (865 words)

	IGBT - Insulated Gate Bipolar Transistors :: Joliet Technologies
		Today's inverters use Insulated Gate Bipolar Transistors (IGBTs) to switch the DC bus on and off at specific intervals.
		The design, the fabrication process, the packing assembly and the experimental results of discrete planar and vertical IGBT are studied and reported in this thesis.
		This parasitic structure causes the latch-up effect in IGBT that makes the current to be no longer controlled by the MOS gate.
	www.joliettech.com /igbt-insulated_gate_bipolar_transistors.htm (770 words)

	IGBT \| Product Introduction \| TOSHIBA Semiconductor Company
		IGBT is short for Insulated Gate Bipolar Transistor.
		It is a power transistor with a MOS structure for an input part and a bipolar one for an output part.
		Suitable for high voltage and high current, it is capable of controlling high power with less drive power.
	www.semicon.toshiba.co.jp /eng/product/transistor/selection/igbt/index.html (47 words)

	IGBT transistor - Definition, explanation
		The Insulated (or sometimes called Isolated) Gate Bipolar Transistor combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistorss by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
		The IGBT is mainly used in switching power supplies and motor control applications.
		Toyota's second generation Prius has a 50 kW IGBT inverter controlling two AC motor/generators connected to the DC battery pack.
	www.calsky.com /lexikon/en/txt/i/ig/igbt_transistor.php (251 words)

	Fanuc Transistor. GE Fanuc drive power transistors.
		Fanuc Transistors for a variety of Fanuc drives, including alpha modules, C, I, S series AC drive units, and also DC parts as well.
		The transistor modules listed pretty much cover all of the Fanuc power transistor modules employed in all series of drives.
		Transistor blocks, include darlington transistor module and IGBT, as well as IPM modules.
	www.fanuc-parts.net /transistor.html (65 words)

	compuganga.com Electronic components on the market today
		triac compound transistor transformer cathode ray technique tube darlington transistor photodiode other active components strain gauge igbt mathematics lists transistor bipolar transistor magnetic emeralds amplifier (toroid) yagi.
		structural evolution of byzantine architecture igbt transistor photovoltaic cell (solar cell).antennas: radio antenna point-to-point construction toaster and sandwich toaster transistor a list transient voltage suppression diode printed turquoise circuit boards inductor klystron igbt transistor transistor switch.active components (solid-state): the internet diode.
		compound transistor nixie tube.electromechanical sensors the moon and actuators: microphone photo transistor resistor loudspeaker magnetic amplifier (toroid) synthetic and artificial gemstones capacitor liquid crystal display schottky diode klystron field effect transistor wood structure compound transistor.
	www.compuganga.com /services.htm (339 words)

	Analyze IGBT Losses With Behavioral Models
		However, accurate IGBT loss analysis in sinusoidal switchmode circuits is a difficult proposition.
		Results obtained from this simulation are the average IGBT losses, junction, case, and heat sink temperatures.
		The three IGBT losses are combined by three-input summing block X7 to develop an output voltage proportional to total IGBT losses (1V/W).
	powerelectronics.com /mag/power_analyze_igbt_losses (1215 words)

	Thèse EPFL 3215 (2005) Serge Pittet
		The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV.
		An equivalent transistor macromodel, correctly and quickly predicting currents and voltages on the element is needed.
		This thesis proposes an IGBT transistor model based on semiconductor physics and validated through a comparison with finite element simulator results.
	library.epfl.ch /theses/?nr=3215 (385 words)

	Transistors / IGBTs at The Electrostore.com - Electronic Surplus Parts & Equipment
		Please also see our IGBT / Transistor Additional Stock page.
		These appear to be identical to part number KD324515 except that the two transistors are wired in a common-emitter configuration.
		To view a full specification sheet for SKM 145GAL123D (PDF), click here (also shown as skm 145gal 123d or skm 145 gal 123 d).
	theelectrostore.com /shopsite_sc/store/html/transistors-igbts.html (510 words)

	International Rectifier - IRG4PC40UD - Allied Electronics
		Transistor; IGBT; TO-247AC; 160 A (Max.); 600 V (Max.); 65 W (Max.); -55 degC
		IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
		Designed to be a drop-in replacement for equivalenttt industry-standard generation 3 IR IGBT’s.
	www.alliedelec.com /Search/ProductDetail.asp?SKU=273-2046&SEARCH=&ID=&DESC=IRG4PC40UD (116 words)

	Definition of IGBT transistor
		The "first-generation" devices of the 1980s and early '90s were relatively slow in switching, and prone to failure through such modes as latchup and secondary breakdown.
		The IGBT is mainly used in switching power supplies and motor control applications.
		The extremely high pulse ratings of second- and third- generation devices also make them useful for generating large power pulses in areas like particle and plasma physics, where they are starting to supersede older devices like thyratrons and spark gaps.
	www.wordiq.com /definition/IGBT_transistor (257 words)

	The Insulated Gate Bipolar Transistor (IGBT)
		All discussion here will be concerned with the n-channel type but p-channel IGBT's can be considered in just the same way.
		Some of the injected holes will recombine in the drift region, while others will cross the region via drift and diffusion and will reach the junction with the p-type region where they will be collected.
		region turning on the parasitic transistor which forms part of a parasitic thyristor.
	www.elec.gla.ac.uk /groups/dev_mod/papers/igbt/igbt.html (677 words)

	Igbt Schematic Dimmer: Machine Design (Site not responding. Last check: )
		Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate.
		Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
		igbt technology, igbt theory, IGBT Transistor, igbt transistor application, igbt tutorial
	productsearch.machinedesign.com /mdproducts/igbt_schematic_dimmer (232 words)

	IGBT-Electronic Surplus Inc.
		30A 600V IGBT MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor.
		These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
		IGBT 100W 600V 23Amp TO-220AB-=- NEW MFR TUBE
	www.electronicsurplus.com /ccc2153-igbt.htm (164 words)

	FindChips.com Search (Site not responding. Last check: )
		Transistor; IGBT; 600 V (Min.); 70 A (Max.); 20 V (Max.); 200 W (Max.)
		Transistor, IGBT; D-61; IGBT; 1200 V, 145 A; 1200 V; 145 A; 1200 V
		Transistor, IGBT; D-58; IGBT; 1200 V, 570 A; 1200 V; 570 A; 1200 V
	www.findchips.com /avail?part=IGBT (5345 words)

	EngNet - Insulated Gate Bipolar Transistor (IGBT) - Power Electronic Products International
		Employing 5th Generation planar IGBT chips with 0.6µm design rule or CSTBTâ¢ technology with superior loss performance more
		Employing low loss and fast speed IGBTs for total reduction at high frequencies.
		This product is a semiconductor integrated circuit designed to directly drive the power MOS/IGBT modules of half bridge composition by integrating the 1200V, 600V and 8/24V...
	www.engnetglobal.com /c/c.aspx/POW068 (463 words)

	Powerex IGBT (Insulated Gate Bipolar Transistor) Assemblies (POW-R-PAK)
		Powerex IGBT (Insulated Gate Bipolar Transistor) Assemblies (POW-R-PAK)
		The Powerex product line includes a family of configurable IGBT-based power assemblies that may be used in a wide variety of power conversion applications.
		These IGBT Assemblies (POW-R-PAKs) consist of a high performance IGBT bridge mounted on a heatsink with an interface and driver circuit that includes integrated fault detection and feedback circuits.
	www.pwrx.com /summary/IGBTAssembly.aspx (121 words)

	Wiley::Insulated Gate Bipolar Transistor IGBT Theory and Design
		Insulated Gate Bipolar Transistor IGBT Theory and Design
		A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
		Covers IGBT operation, device and process design, power modules, and new IGBT structures.
	www.wiley.com /WileyCDA/WileyTitle/productCd-0471238457.html (155 words)

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