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	High power impatt diode - Patent 6252250
		A diode according to claim 1, characterized in that said means (9) is adapted to cause an avalanche breakdown at a voltage across said electrodes (1, 2) being a factor of less than 50% of the breakdown voltage of the diode would the active-layer doping be substantially constant across the entire active region thickness.
		A diode according to claim 9, characterized in that the lateral separation of said thin layer (9) from the periphery of the diode is larger than the distance between said thin layer (9) and said junction (8), i.e.
		A diode according to claims 1, characterized in that it is composed of an array of small sub-diodes (14) with the characteristics defined mounted in parallel and laterally spaced onto a common heat sink (15).
	www.freepatentsonline.com /6252250.html (0 words)

	Weather radar temperature controlled IMPATT diodes circuit and method of operation - Patent 4952941
		Diode 102 typically has a lead 104 for receiving an injection signal and a lead 106, which is now in connection with switch 108 which has leads 110 extending to an antenna 112 and leads 114 extending to a resistive load 116.
		IMPATT diode 302 is regulated by modulator 310 which is controlled by logic circuit 312 having an input lead 314 to transmission trigger 316.
		IMPATT modulators 504, 506, 508 further having output leads to junctions 514, 516 and 518, respectively, which are separated from ground by IMPATT diodes 524, 526 and 528, respectively.
	www.freepatentsonline.com /4952941.html (0 words)

	WBG Microwave Device Research at Purdue (Site not responding. Last check: 2007-11-07)
		IMPATT diodes deliver the highest RF power of any semiconductor microwave oscillator, and are used to produce carrier signals for microwave transmission systems, particularly airborne and ground-based radar.
		The diode is pulsed to minimize internal heating, and the RF signal is heavily attenuated to protect the spectrum analyzer.
		The diode is pulsed at a low duty cycle to avoid excessive heating, and the signal is intentionally attenuated to protect the spectrum analyzer.
	www.ecn.purdue.edu /wbg/device_research/impatt_diodes (0 words)

	IMPATT Diodes and Test Fixtures IC&IM (Site not responding. Last check: 2007-11-07)
		ELVA-1 series of IMPATT diodes are silicon double drift diodes mounted in hermetically sealed packages and supplied mounted to a copper heat sink.
		The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped p-region, a moderately doped n-region, and a heavily doped (n+)-region.
		IMPATT Diode (1) is installed into the coaxial line, that crosses a waveguide cavity.
	www.elva-1.com /products/microwave/IMPATT-diodes.html (0 words)

	IMPATT diode - Wikipedia, the free encyclopedia
		An IMPATT diode (IMPact ionization Avalanche Transit-Time) is a form of high power diode used in high-frequency electronics and microwave devices.
		These diodes are used in a variety of applications from low power radar systems to alarms.
		A major drawback of using IMPATT diodes is the high level of phase noise they generate.
	en.wikipedia.org /wiki/IMPATT_diode (138 words)

	Radio-Electronics.Com :: Summary of the IMPATT or IMPact Avalanche Transit Time Diode
		The IMPATT or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals.
		The voltage applied to the diode has a mean value that means the diode is on the verge of avalanche breakdown.
		To run an IMPATT diode, a relatively high voltage, often as high as 70 volts or higher may be required.
	www.radio-electronics.com /info/data/semicond/impatt/impatt.php (0 words)

	HPRFhelp version 2.12
		A diode made by diffusing the semiconductor so that a thin intrinsic layer exists between the P and N-doped regions (positive-intrinsic-negative).
		A diode in which the electrical characteristic of primary interest is a voltage dependent capacitance.
		This characteristic permits a highly stable reference voltage to be maintained across the diode despite a relatively wide range of current through the diode.
	www.hp.woodshot.com /hprfhelp/products/diodes/diodedef.htm (0 words)

	Purdue University Nanoscale Center (Site not responding. Last check: 2007-11-07)
		The diode is connected so that when the IGBT turns off (which it does 1000 times per cycle), the inductive current flowing through the motor winding can divert through the diode.
		Purdue is currently exploring SiC IMPATT diodes under a contract from the Office of Naval Research.
		SiC IMPATT diodes are ideally suited for near-term commercial production because the fabrication sequence consists of only two operations, a reactive ion etch and an ohmic contact.
	www.nanodevices.ecn.purdue.edu /widebandgap.html (0 words)

	Highbeam Encyclopedia - Search Results for diode (Site not responding. Last check: 2007-11-07)
		Most diodes are semiconductor devices; diode electron tubes are now used only for a few specialized applications.
		A voltage-controlled PIN diode attenuator using an accurate PIN diode model.
		Intrapulse frequency variation in a W-band pulsed IMPATT diode.
	www.encyclopedia.com /SearchResults.aspx?Q=diode (0 words)

	Impatt Diode - Top Impatt Diode Resources, Reviews and Information (Site not responding. Last check: 2007-11-07)
		MDT Catalog IMPATT Diodes Notes Application from of operation for the IMPATT diode must be specified sensitive with the The IMPATT diode has a negative signal resistance Frequency dc through microwave frequencies.
		Pulse Modulated Impatt Diode Modulator for modulating diode microwave oscillator having a negative resistance surface device comprising an IMPATT a disposed with a resonant mechanical cavity is presented.
		Small signal computer including of IMPATT diodes simulation A generalized computer simulation carrier for small signal analyses circuit of IMPATT diodes incorporating the method diffusion current is materials presented.
	www.justdiodes.com /listings56.html (0 words)

	uwdiode.doc
		C = capacitance of the diode at voltage, V. = capacitance of the diode at voltage, V= 0.
		When a diode is forward biased, it stores charge and as the diode is reverse biased, the diode ceases to conduct.
		In the case of a diode used as a mixer, the RF and Local Oscillator inputs are given as shown in the figure.
	www.avtechpulse.com /faq.html/IV.28/uwdiode.html (0 words)

	diode — Infoplease.com
		A diode has a low resistance to electric current in one direction and a high resistance to it in the reverse direction.
		A diode using this property, called a Zener diode, can be used to regulate the voltage in a circuit.
		A thermistor is a special semiconductor diode whose conductivity increases with the diode temperature.
	www.infoplease.com /ce6/sci/A0815563.html (0 words)

	Tunnel diode - Wikipedia, the free encyclopedia
		A tunnel diode or Esaki diode is a type of semiconductor diode which is capable of very fast operation, well into the microwave region GHz, by utilizing quantum mechanical effects.
		In the tunnel diode, the dopant concentration in the P and N layers are increased to the point where the reverse breakdown voltage becomes zero and the diode conducts in the reverse direction.
		Tunnel diodes are also relatively resistant to nuclear radiation, as compared to other diodes.
	en.wikipedia.org /wiki/Tunnel_diode (0 words)

	Impatt Diode \| Diode Transil \| Ai Gunn Diode \| The Diode (via CobWeb/3.1 planetlab1.cs.virginia.edu) (Site not responding. Last check: 2007-11-07)
		Our impatt diode site is growing daily so we have not yet managed to write lots of content, but what we have done so far is researched the very best green laser diode sites on the net.
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	www.ztwjjd.com.cob-web.org:8888 /impatt-diode.htm (0 words)

	DeLoach (Site not responding. Last check: 2007-11-07)
		His work on microwave sources in the mid-1960s culminated in the discovery of the impact avalanche and transit time device, known as an IMPATT diode.
		This diode efficiently generates micro- and millimeter waves above the frequency ranges at which transistors normally operate when a battery is placed across it.
		But the IMPATT diode never achieved its place in the sun, according to DeLoach.
	www.auburn.edu /academic/science_math/cosamold/docs/info/deloach.html (0 words)

	IMPATT diodes - US Patent 6774460 (Site not responding. Last check: 2007-11-07)
		This improves the predictability with which a current can be injected into the avalanche region and enables a relatively narrow pulse of current to be injected into the avalanche region in order to enable a relatively noise free avalanche multiplication.
		The narrow bandgap region may be located between a heavily doped contact region and the avalanche region and is preferably arranged to generate a tunnel current at the peak reverse bias applied to the diode.
		An extension member is attachable to a trailer hitch and extends away from the vehicle and is connected to a seating frame supporting a toilet seat.
	www.patentstorm.us /patents/6774460.html (0 words)

	Semiconductor OneSource: Semiconductor Glossary -- Search For : diode
		semiconductor diode in which metal-semiconductor contact is used to form a potential barrier.
		LED in which radiation comes out from the edge of p-n junction in the direction parallel to the junction plane.
		Light Emitting Diode; semiconductor device emitting light; two-terminal rectifying device made using direct bandgap semiconductor; energy generated during recombination processes in the space charge region of the junction (typically p-n) is released in the form of light; wavelength of emitted radiation depends on the width of the bandgap.
	semiconductorglossary.com /?searchterm=diode (0 words)

	[No title]
		For IMPATT works at 500GHz, the device thickness is very small (less than 0.5um) compared with diode area, this is good for heat conductance.
		A.K.Panda, D.Pavlidis, and E.Alekseev, “DC and high-frequency characteristics of GaN-Based IMPATTs”, IEEE Trans.
		A.K.Panda, D.Pavlidis, and E.Alekseev, “Noise Characteristics of GaN-Based IMPATTs”, IEEE Trans.
	www.eecs.umich.edu /dp-group/classes/impatt.doc (0 words)

	Cavity-stabilized IMPATT Diode Oscillators of CIDO series (via CobWeb/3.1 planetlab1.cs.virginia.edu) (Site not responding. Last check: 2007-11-07)
		They combine the extended frequency range and high output power of IMPATT oscillators with stability and phase nose capabilities provided by cavity-stabilized Gunn oscillators.
		The source consist of a waveguide cavity IMPATT oscillator which is coupled to a high Q, high order mode cylindrical cavity.
		The cylindrical cavity is made of Invar to improve the frequency stability over a broad temperature range.
	www.elva-1.com.cob-web.org:8888 /products/microwave/IMPATT-CIDO.html (0 words)

	IMPATT-Diode - Wikipedia (via CobWeb/3.1 planetlab1.cs.virginia.edu) (Site not responding. Last check: 2007-11-07)
		Die IMPATT-Diode ist ein Hochfrequenz-Halbleiter-Bauelement der Mikroelektronik, das als Diode zu den elektronischen Bauelementen gehört.
		Wenn die beiden Verzögerungszeiten zusammen eine halbe Periode ergeben, entsteht ein negativer elektrischer Widerstand bei der entsprechenden Frequenz.
		Weil die Diode bei relativ niedrigen Temperaturen hergestellt werden kann, ist es möglich, die ursprüngliche hochwertige epitaktische Schicht, zu bewahren.
	de.wikipedia.org.cob-web.org:8888 /wiki/IMPATT-Diode (0 words)

	Inverse Rectennas for Two-Way Wireless Power Transmission
		In previous research, rectenna energy-conversion efficiency as high as 91 percent had been achieved in the receiving mode.
		However, IMPATT oscillators are typically only about 10-percent efficient; in other words, about 90 percent of the dc input power becomes heat, which must be removed.
		The issues of energy-conversion efficiency and heat sinking would have to be addressed in developing practical inverse rectennas.
	www.nasatech.com /Briefs/July98/NPO20321.html (0 words)

	Nonlinear Analysis of a Double Avalanche Region IMPATT Diode -- ZEMLIAK et al. E88-C (1): 119 -- IEICE Transactions on ...
		Nonlinear Analysis of a Double Avalanche Region IMPATT Diode -- ZEMLIAK et al.
		Nonlinear Analysis of a Double Avalanche Region IMPATT Diode
		diodes were analyzed in very wide frequency region.
	ietele.oxfordjournals.org /cgi/content/abstract/E88-C/1/119 (0 words)

	Electrical Engineering at UTA
		After graduating in 1971 from the University of Michigan, Dr. Davis was employed at McMaster University where he worked on automated network analysis, design of a PIN diode phase shifter, and a hardware simulation study for Canadian Satellite Communications.
		At GE his duties consisted of work in the design of alumina and ferrite microstrip IMPATT amplifiers, hybrid coupler power combiner, and microwave proximity detectors.
		He worked on IMPATT diode power combiners, thermal response of IMPATT diodes, broadband directional couplers, Schiffman phase shifters and filter design.
	www-ee.uta.edu /eedept/faculty/davis.htm (0 words)

	Madhu S. Gupta
		Gupta and R. Lomax, "A Self-Consistent Large-Signal Analysis of Read-Type IMPATT Diode Oscillator," IEEE Trans.
		Gupta, "A Small-Signal and Noise Equivalent Circuit for IMPATT Diodes," IEEE Trans. Microwave Theory and Techniques, vol.
		Gupta, "Large-Signal Equivalent Circuit for IMPATT Diode Characterization and its Application to Amplifiers," IEEE Trans.
	electrical.sdsu.edu /faculty/gupta/publications.htm (0 words)

	DatasheetArchive: Semiconductor Datasheets Page 810 (Site not responding. Last check: 2007-11-07)
		Continuous-Wave IMPATT Diode - IMPATT Diode,BV=38 V Typ at 1mA.
		Continuous-Wave IMPATT Diode - IMPATT Diode,BV=70 V Typ at 1mA.
		Continuous-Wave IMPATT Diode - IMPATT Diode,BV=52 V Typ at 1mA.
	www.datasheetarchive.com /datasheet/pdf/810.html (0 words)

	Wisewave Technologies, Inc.
		OGI series CW injection-locked Gunn oscillators are alternatives to HEMT device and IMPATT diode based stable amplifiers, especially at high millimeterwave frequencies.
		OGL Series K and Ka band Gunn diode oscillators are especially designed for low cost commercial applications.
		OGR and OMR series Gunn oscillator bias regulator and regulator/modulator are developed as a low noise DC regulator/ modulator for Gunn diode oscillators.
	wisewave-inc.com /product/product.php?Category=Oscillator (0 words)

	No Title
		"Multifrequency Operation of IMPATT Diodes" (with W. Schroeder and P. Greiling).
		"Avalanche Region Width in Various Structures of IMPATT Diodes" (with W. Schroeder, C. Lee and R. Lomax).
		"Resonant Tunneling Diodes Stability and its Consequences for High Frequency Operation" (with C. Kidner, I. Mehdi and J. East).
	www.eecs.umich.edu /~dswartz/gih/CONF-gih.html (0 words)

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