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Topic: Indium antimonide

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	American Elements: Indium Supplier & Technical Information
		Indium is available as metal and compounds with purities from 99% to 99.9999% (ACS grade to ultra-high purity); metals in the form of foil, sputtering target, and rod, and compounds as submicron and nanopowder.
		Indium is available in soluble forms including chlorides, nitrates and acetates.
		Organo-Metallic Indium compounds are soluble in organic or non-aqueous solvents.
	www.americanelements.com /in.html (507 words)

	Indium(III) antimonide - Wikipedia, the free encyclopedia
		Indium antimonide (InSb) is a narrow gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidance systems, and in infrared astronomy.
		Indium antimonide is a crystalline compound made from the elements indium and antimony.
		Indium antimonide photodiode detectors are photovoltaic, generating electric current when subjected to infrared radiation.
	en.wikipedia.org /wiki/Indium_antimonide (556 words)

	Indium - Wikipedia, the free encyclopedia
		Some indium compounds such as indium antimonide, indium phosphide, and indium nitride are semiconductors with useful properties.
		The ultrapure metalorganics of indium, specifically high purity Trimethylindium (TMI) is used as a precursor in III-V compound semiconductors, while it is also used as the semiconductor dopant in II-VI compound semiconductors.
		Indium oxide (In) is used as a transparent conductive glass substrate in the making of electroluminescent panels.
	en.wikipedia.org /wiki/Indium (847 words)

	'Quantum well' transistor promises lean computing - quantum-world - 10 February 2005 - New Scientist Tech
		Indium antimonide allows electrons to speed through faster than conventional silicon-based transistors due to its highly active and greater number of "charge-carriers" - which help relay the electrons quickly.
		To overcome this temperature limitation, the researchers sandwiched pure indium antimonide between layers of the same material mixed with aluminium.
		"Indium antimonide is one example of several new materials that Intel will continue to investigate in order to ensure that Moore's Law extends well beyond the next decade," says Ken David, director of components research for Intel's Technology and Manufacturing Group.
	www.newscientisttech.com /channel/tech/quantum-world/dn6997 (471 words)

	Coming soon: Indium Antimonide Valley? \| InfoWorld \| News \| 2005-12-07 \| By Tom Krazit, IDG News Service
		Intel first announced a prototype indium antimonide transistor earlier this year in partnership with a U.K. firm called QinetiQ Ltd., and it has now reduced the size of the transistor and made it more suitable for mass computing, Willoner said.
		Indium sits in the third column of the table, meaning it has three electrons in that outer layer, and antimony sits in the fifth column.
		Intel built the indium antimonide transistor by replacing the channel of a conventional transistor, normally made from silicon, with the compound, Willoner said.
	www.infoworld.com /article/05/12/07/HNindiumvalley_1.html (1444 words)

	Teck Cominco Products and Services (Site not responding. Last check: 2007-10-10)
		If you are currently developing a product, or are in the process of researching new areas that may require indium, give us a call or complete our inquiry form.
		Indium is produced as a co-product of the zinc smelting process at our world-class integrated refinery in Trail, BC, Canada.
		Indium is used in a multitude of high tech applications including coatings for flat panel displays, industrial solders and semiconductors.
	products.teckcominco.com /Products/Indium.html (283 words)

	Optical Data from Sopra SA
		Indium Gallium Arsenide (strained) -- 4 Gallium compositions
		Indium Gallium Arsenide (relaxed) -- 4 Gallium compositions
		Aluminum Gallium Indium Phosphide -- 6 Aluminum compositions
	www.sspectra.com /sopra.html (177 words)

	'Universal Substrate' For Semiconductors Is Developed At Cornell
		The Cornell team demonstrated the technique with thick, pure crystal layers of indium gallium phosphide, gallium antimonide and indium antimonide, with mismatches as high as 15 percent.
		The Cornell team, in collaboration with researchers from the Wright Patterson Laboratory and the Sandia Laboratory, has demonstrated that the defect density in an indium antimonide layer has been reduced by at least 100,000 times with the new method, compared to the conventional method.
		This means that indium antimonide crystals can be grown on gallium arsenide, to form the basis for infrared detection and a Hall sensor -- a sensor that has been used in airplanes and soon will be used in automobiles.
	www.eurekalert.org /pub_releases/1997-03/CUNS-SFSI-270397.php (1264 words)

	Techworld.com - Applications News - Intel reveals transistors of the future
		Intel and Ministry of Defence spin-off Qinetiq have successfully built transistors using an exotic material called indium antimonide that allows for far lower voltages than is possible with current devices, the companies said on Wednesday.
		The companies said indium antimonide (InSb) could be used in manufacturing in the middle of the next decade.
		"Indium antimonide is one example of several new materials that Intel will continue to investigate in order to ensure that Moore’s Law extends well beyond the next decade," said Ken David, director of components research for Intel’s Technology and Manufacturing Group, in a statement.
	www.techworld.com /applications/news/index.cfm?NewsID=3104 (899 words)

	Planar indium antimonide diode array and method of manufacture - Patent 4286277
		An improved diode array and method of manufacture is provided by the diffon of cadmium from an indium-cadmium alloy through a silicon diode mask into bulk indium-antimonide to form a planar structure.
		It is convenient in many cases to indium solder these chips on sapphire bases which provide added strength, electrical insulation and excellent thermal conduction.
		The common return conductor for the diodes can be formed on any portion of the n-type material at the same time and in the same manner as the contacts for the p-type areas, or it can be applied as a protective coating on the back of the wafer (or chip).
	www.freepatentsonline.com /4286277.html (3074 words)

	Coming soon: Indium Antimonide Valley?
		Intel first announced a prototype indium antimonide transistor earlier this year in partnership with a U.K. firm called QinetiQ Ltd., and it has now reduced the size of the transistor and made it more suitable for mass computing, Willoner said.
		Indium sits in the third column of the table, meaning it has three electrons in that outer layer, and antimony sits in the fifth column.
		Intel built the indium antimonide transistor by replacing the channel of a conventional transistor, normally made from silicon, with the compound, Willoner said.
	computerworld.com /hardwaretopics/hardware/story/0,10801,106845,00.html (1437 words)

	Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture ...
		The method as set forth in claim 6 wherein the first semiconductor layer comprises gallium phosphide, a second semiconductor layer comprises gallium indium phosphide, a third semiconductor layer comprises gallium arsenide and a fourth layer comprises gallium indium phosphide.
		It comprises indium gallium arsenide doped with either tellurium (Te) or antimony (Sb) and is approximately 0.1.mu.m thick and serves as an electrical contact layer for the solar cell.
		Also, the cut-off wavelength of the indium gallium arsenide compositions shown are greater than those for silicon or gallium arsenide.
	www.freepatentsonline.com /6437233.html (3085 words)

	Indium Antimonide Detectors
		Indium Antimonide Short Form Catalog in PDF Format
		J10D Series detectors are high quality Indium Antimonide (InSb)photodiodes, providing excellent performance in the 1 to 5.5 µm wavelength region.
		The background current IBG may be reduced by adding a cold filter or reducing the field of view.
	www.judsontechnologies.com /indiumAnt.htm (529 words)

	Intel and QinetiQ Collaborate On Transistor Research
		The research results obtained from the quantum well transistors research showed a 10x lower power consumption for the same performance, or conversely a 3x improvement in transistor performance for the same power consumption, as compared to today's traditional transistors.
		"The experimental results of our joint research with QinetiQ demonstrate that indium antimonide is a promising material for potential integration in future transistors," said Ken David, director of components research for Intel's Technology and Manufacturing Group.
		"Indium antimonide is one example of several new materials that Intel will continue to investigate in order to ensure that Moore's Law extends well beyond the next decade."
	www.intel.com /pressroom/archive/releases/20050208corp.htm (812 words)

	Teck Cominco Products and Services (Site not responding. Last check: 2007-10-10)
		Teck Cominco supplies indium ingots in 1kg, 3kg and 10kg bars to meet your requirements.
		The largest use for high purity indium is in the production of indium phosphide (InP) and indium antimonide (InSb) for use in the semiconductor industry.
		Teck Cominco is able to dry atomize 99.999% indium metal and produce a particle size and distribution to meet your requirements.
	products.teckcominco.com /Products/IndiumProducts.html (239 words)

	Technology Review: Information Technology
		Why it matters: The properties of compound semiconductors such as indium gallium arsenide or indium antimonide make them attractive alternatives to silicon.
		Electrons move through compound semiconductors as much as 50 times faster than they do through silicon; compound-semiconductor transistors thus operate at a lower voltage, consume less power, and produce less heat that can damage a chip.
		Methods: The researchers used a common deposition process to build up layers of indium gallium arsenide and of the insulating material indium aluminum arsenide -- the "gate dielectric" that prevents electron leakage between the transistor and its "gate," which turns it on and off.
	www.technologyreview.com /InfoTech/16823 (342 words)

	Intel helps build low-power transistor \| Tech News on ZDNet
		Following two years of joint research, the companies announced this week that they created a "quantum well" transistor out of indium antimonide developed by Qinetiq.
		Indium antimonide is a so-called III-V compound, meaning that its two elements come from III and V columns in the periodic table of the elements.
		"The experimental results of our joint research with Qinetiq demonstrate that indium antimonide is a promising material for potential integration in future transistors," Ken David, director of components research for Intel's Technology and Manufacturing Group, said in a prepared statement.
	news.zdnet.com /2100-9584_22-5570137.html (742 words)

	Intel aims for faster, cooler transistors \| Tech News on ZDNet
		Instead, it consists of indium antimonide, a compound made from the elements indium (In) and anitmony (Sb).
		The proximity means that indium and antimony share similar characteristics with silicon, but still behave differently.
		Intel says that replacing silicon with indium antimonide cuts power consumption by 10 times while boosting performance by 50 percent.
	news.zdnet.com /2100-9584_22-5984635.html (803 words)

	insb indium antimonide thermal infrared camera for high resolution industrial, medical, law enforcement and military ...
		insb indium antimonide thermal infrared camera for high resolution industrial, medical, law enforcement and military applications
		The InSb320 IR Imaging system features an Indium Antimonide detector for applications in the 3-5 micron spectrum.
		No part of this web site may be copied with out the express written consent of SPI and / or the copyright / trademark owner.
	www.x20.org /thermal/insb320.htm (496 words)

	Indium Antimonide/Mercury Cadmium- Developer Zone - National Instruments
		Indium antimonide and mercury cadmium telluride semiconductors are used in photoelectromagnetic optical detectors.
		The magnetic field applied to the semiconductor separates the electrical charges created by the illumination of the semiconductor surface.
		This material is protected under the copyright laws of the U.S. and other countries and any uses not in conformity with the copyright laws are prohibited, including but not limited to reproduction, DOWNLOADING, duplication, adaptation and transmission or broadcast by any media, devices or processes.
	zone.ni.com /devzone/cda/ph/p/id/111 (207 words)

	Physics News Graphics: A "One-Size-Fits-All" Surface for Semiconductors
		In the March 31, 1997 issue of Applied Physics Letters, Yu-Hwa Lo and his colleagues at Cornell announce that they have created a thin gallium arsenide film whose crystal axis is rotated slightly relative to that of the gallium arsenide substrate onto which it was deposited.
		Onto the gallium arsenide surface, the researchers successfully deposited crystals of indium gallium phosphide, gallium antimonide, and indium antimonide.
		If gallium nitride (mismatch of 20%) could be deposited onto this surface, the researchers believe that high-quality blue and ultraviolet semiconductor lasers might result.
	www.aip.org /png/html/substrat.htm (416 words)

	ACS CINF: Computer Searching of Chemical Abstracts: Display Formats for Technical Reports
		TERM: gallium phosphide nanocryst semiconductor prepn; arsenide gallium nanocryst semiconductor prepn; antimonide gallium nanocryst semiconductor prepn; indium phosphide nanocryst semiconductor prepn; compd semiconductor nanocryst prepn INDEX TERM: Semiconductor materials (compd., Group III-V; synthesis and characterization and immobilization of nanocryst.
		ST gallium phosphide nanocryst semiconductor prepn; arsenide gallium nanocryst semiconductor prepn; antimonide gallium nanocryst semiconductor prepn; indium phosphide nanocryst semiconductor prepn; compd semiconductor nanocryst prepn IT Semiconductor materials (compd., Group III-V; synthesis and characterization and immobilization of nanocryst.
		semiconductors) IT 1303-00-0P, Gallium arsenide (GaAs), preparation 1303-11-3P, Indium arsenide (InAs), preparation 1312-41-0P, Indium antimonide (InSb), preparation 12063-98-8P, Gallium phosphide (GaP), preparation 12064-03-8P, Gallium antimonide (GaSb) 22398-80-7P, Indium phosphide (InP), preparation RL: PNU (Preparation, unclassified); PREP (Preparation) (prepn.
	www-sul.stanford.edu /depts/swain/hosted/cinf/casstn/trbib.html (1561 words)

	The effect of growth parameters on the position of the melt - solid interface in Bridgman growth of indium antimonide
		The effect of growth parameters on the position of the melt - solid interface in Bridgman growth of indium antimonide
		The effect of growth parameters on the position of the interface in the melt growth of indium antimonide by vertical solidification has been studied.
		It has been observed that the interface deviates from the expected position of the melting-point isotherm.
	stacks.iop.org /0022-3727/30/L61 (291 words)

	X-bit labs - Hardware news - Indium Antimonide — Material for Future Chips, Say Intel and QinetiQ.
		Indium Antimonide — Material for Future Chips, Say Intel and QinetiQ.
		Intel Corp.’s and QinetiQ on Wednesday announced development of a new, ultra-fast, yet very low power prototype transistor using new materials that could form the basis of its microprocessors and other logic products beginning in the second half of the next decade.
		Intel and QinetiQ researchers have jointly demonstrated an enhancement-mode transistor using indium antimonide (chemical symbol: InSb) to conduct electrical current.
	www.xbitlabs.com /news/other/display/20051207211955.html (620 words)

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