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Topic: Indium nitride

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	Indium gallium nitride - Wikipedia, the free encyclopedia
		N) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN).
		Indium gallium nitride is the light-emitting layer in modern blue and green LEDs and often grown on a GaN buffer on a transparent substrate as, e.g.
		It has a high heat capacity and its sensitivity to ionizing radiation is low (like other group III nitrides), making it also a potentially suitable material for solar cell arrays for satellites.
	en.wikipedia.org /wiki/Indium_gallium_nitride (379 words)

	Indium - Wikipedia, the free encyclopedia
		Indium is a chemical element in the periodic table that has the symbol In and atomic number 49.
		Indium (named after the indigo line in its atomic spectrum) was discovered by Ferdinand Reich and Hieronymous Theodor Richter in 1863 while they were testing zinc ores with a spectrograph in search of thallium.
		Indium is produced mainly from residues generated during zinc ore processing but is also found in iron, lead, and copper ores.
	en.wikipedia.org /wiki/Indium (762 words)

	Nitride semiconductor device - Patent 5959307
		The thickness of the second p-side nitride semiconductor layer 102 is preferably in the range of 0.01 to 5.mu.m and most preferably in the range of 0.02 to 1.mu.m, which range enables the second p-side nitride semiconductor layer 102 to function, for example, as a desirable light-guiding layer.
		The thickness of the third p-side nitride semiconductor layer 103 is preferably in the range of 0.01 to 2.mu.m and most preferably in the range of 0.05 to 1.mu.m, which range enables the third p-side nitride semiconductor layer 103 to function as a carrier confinement layer having an excellent crystallinity.
		The thickness of the second n-side nitride semiconductor layer 202 is preferably in the range of 0.01 to 5.mu.m and most preferably in the range of 0.02 to 1.mu.m, which range enables the second n-side nitride semiconductor layer 202 to function, for example, as a desirable light-guiding layer.
	www.freepatentsonline.com /5959307.html (9464 words)

	SFL ORG. News Center Conductivity is More Than Skin Deep
		The narrow band gap of indium nitride corresponds to the infrared end of the solar spectrum; the wide band gap of gallium nitride corresponds to the ultraviolet end.
		The average energy of dangling bonds which riddle the surface and bulk of indium nitride lies in its conduction band, so indium nitride always has an accumulation of electrons near the surface and is naturally n-type throughout.
		The reason is that indium nitride crystals are riddled with defects, as many as tens of billions per square centimeter.
	www.sflorg.com /sciencenews/scn053106_01.html (1407 words)

	A nearly perfect solar cell, part 2
		The 2 eV bandgap had been measured on samples of indium nitride created by sputtering, a technique in which atoms of the components are knocked off a solid target by a beam of hot plasma.
		And because their collaborators could precisely control the relative amounts of indium and gallium in the crystals, the group soon learned that bandgap width increases smoothly and continuously as the proportions shift away from indium in favor of gallium, until reaching the well-established value of 3.4 eV for simple gallium nitride.
		Indium gallium nitride solar cells could be made with more than two layers, perhaps a great many layers with only small differences in their bandgaps, for solar cells approaching the maximum theoretical efficiencies of better than 70 percent.
	enews.lbl.gov /Science-Articles/Archive/MSD-perfect-solar-cell-2.html (972 words)

	Material soaks up the sun TRN 121102
		The best photovoltaic material currently available, a combination of gallium arsenide and gallium indium phosphide, has a theoretical efficiency of 32 percent; indium nitride has the potential to increase that to 50 percent, said Wladek Walukiewicz, a senior staff scientist at Lawrence Berkeley National Laboratory.
		Indium nitride is important because its band gap sits squarely in the middle of the light spectrum; this makes it possible to produce gallium-indium-nitride semiconductors that have any gap within the solar spectrum range, and makes it possible to put more semiconductors in tandem, said Walukiewicz.
		It is theoretically easier to make p-type doped indium nitride than to do the same with gallium nitride, which has already been done, he said.
	www.trnmag.com /Stories/2002/121102/Material_soaks_up_the_sun_121102.html (1172 words)

	19/11/2002 -- Material eases solar cell manufacturing
		Decades-old work from Australia indicated that indium nitride might do the trick, Walukiewicz said, but the researchers could not generate blue light at the expected energy levels.
		Further examination led them to discover that indium nitride had a much lower than expected "band gap." That is, it required very little energy to move electrons around in the material -- to create an electric current.
		Because indium nitride is so similar to gallium -- the primary photoelectric material -- the team began mixing the two materials in increasing proportions.
	www.climateark.org /articles/reader.asp?linkid=17819 (764 words)

	Ultra Efficient Solar Cells On The Way
		With a band gap of 3.4 eV, gallium nitride emits invisible ultraviolet light, but when some of the gallium is exchanged for indium, colors like violet, blue, and green are produced.
		To get the best possible samples of indium nitride, the Berkeley Lab researchers worked with a group at Cornell University headed by William Schaff, renowned for their expertise at molecular beam epitaxy (MBE), and also with a group at Ritsumeikan University headed by Yasushi Nanishi.
		Two layers of indium gallium nitride, one tuned to a band gap of 1.7 eV and the other to 1.1 eV, could attain the theoretical 50 percent maximum efficiency for a two-layer multijunction cell.
	www.scienceagogo.com /news/20021020210743data_trunc_sys.shtml (2420 words)

	Low Temperature Nitride Semiconductor Growth
		Indium nitride is also grown at Macquarie using a radio-frequency reactive sputtering unit, despite the simplicity of this method it still provides the best quality InN.
		It is also important that the atomic spacing of the substrate and the nitride films should match as closely as possible to inhibit strain in the film i.e.
		The old apparatus used to create the highest mobility (fastest) indium nitride ever grown is still in existence at Macquarie University, and has recently been upgraded to attempt another Macquarie led assault on the old record.
	www.ics.mq.edu.au /~sbutcher/Research_page/Low_Temperature_Growth.htm (2139 words)

	Mechanisms of 1D Crystal Growth in Reactive Vapor Transport: Indium Nitride Nanowires
		Indium nitride (InN) nanowire synthesis using indium (In) vapor transport in a dissociated ammonia environment (reactive vapor transport) is studied in detail to understand the nucleation and growth mechanisms involved with the so-called "self-catalysis" schemes.
		However, the direct nitridation of In droplets using dissociated ammonia results in the spontaneous nucleation and basal growth of nanowires directly from the In melt surface, which is quite different from the above-mentioned nucleation mechanism with the reactive vapor transport case.
		The InN nanowires exhibit a band gap of 0.8 eV, whereas the mixed phase of InN and In nanowires exhibit a peak at ~1.9 eV in addition to that at 0.8 eV.
	pubs.acs.org /cgi-bin/abstract.cgi/nalefd/2005/5/i08/abs/nl0505804.html (271 words)

	Gallium Nitride: Novel Material for the New Millenium
		Then a remarkable kind of semiconducting material made from gallium nitride and its close chemical cousins: aluminum nitride and indium nitride may be the answer.
		Gallium nitride promises big improvements in the performance of ultra-wide bandwidth communications and radar systems because it can deliver up to 10 times as much power at microwave frequencies as the silicon and gallium-arsenide semiconductors now used in cellular telephones, military radar systems, and satellite transmitters.
		Due to gallium nitride's chemical composition, scientists also expect the material to exhibit greater "radiation hardness," an attribute that is highly desirable for applications in outer space where components must operate reliably in radioactive environments.
	www.spacedaily.com /news/materials-01a.html (1256 words)

	newscast: oemagazine.com: Powered by oe magazine. The Monthly Publication of SPIE—The International Society for ... (Site not responding. Last check: 2007-10-24)
		The serendipitous discovery means that a single system of alloys incorporating indium, gallium, and nitrogen can convert virtually the full spectrum of sunlight -- from the near infrared to the far ultraviolet -- to electrical current.
		The collaborators soon established that the alloy's band-gap width increases smoothly and continuously as the proportions shift from indium toward gallium, until -- having covered every part of the solar spectrum -- it reaches the well-established value of 3.4 eV for simple gallium nitride.
		Two layers of indium gallium nitride, one tuned to a band gap of 1.7 eV and the other to 1.1 eV, could attain the theoretical 50% maximum efficiency for a two-layer multijunction cell.
	oemagazine.com /newscast/112502_newscast01.html (841 words)

	Solar e-Clips - Accidental finding could lead to full-spectrum solar cell [LBNL- Berkeley] (Site not responding. Last check: 2007-10-24)
		indium nitride is not 2 electron volts (2 eV) as previously thought, but instead is a much
		A newly established low band gap for indium nitride means that the indium gallium nitride
		At first glance, indium gallium nitride is not an obvious choice for solar cells.
	www.californiasolarcenter.org /solareclips/2002.11/20021126-9.html (1172 words)

	LEDs - Gallium Indium Nitride UV, violet, purple, blue, aqua, turquoise, green, white. Also Gallium Arsenide and ...
		According to the instructional material that was provided, the Indium has seals to help keep out nasties like water, mud, jelly, honey, milk, lime Coke, coffee, pee, grape Fanta, suntan lotion, gasoline, and other unwanted liquids.; but it is NOT designed to be used or placed underwater.
		The Indium is supplied with a cord that serves as a lanyard.
		After plugging the USB charger into my laptop and connecting the Indium, my laptop's screen displayed a window that read something to the effect of the device connected to the USB port was drawing too much current.
	ledmuseum.candlepower.us /second/indium.htm (1283 words)

	An unexpected discovery could yield a full spectrum solar cell
		The serendipitous discovery means that a single system of alloys incorporating indium, gallium, and nitrogen can convert virtually the full spectrum of sunlight-from the near infrared to the far ultraviolet-to electrical current.
		To get the best possible samples of indium nitride, the Berkeley Lab researchers worked with a group at Cornell University headed by William Schaff, renowned for its expertise at molecular beam epitaxy (MBE), and also with a group at Ritsumeikan University headed by Yasushi Nanishi.
		The collaborators soon established that the alloy's band-gap width increases smoothly and continuously as the proportions shift from indium toward gallium, until-having covered every part of the solar spectrum-it reaches the well-established value of 3.4 eV for simple gallium nitride.
	www.eurekalert.org /pub_releases/2002-11/dbnl-aud111802.php (1271 words)

	Flow modulation epitaxy of indium gallium nitride Journal of Electronic Materials - Find Articles
		The indium composition of the FME grown layers was generally lower than of films grown under the same conditions in the continuous growth mode, but which had been of poor optical quality.
		The indium incorporation efficiency strongly increases by reducing the growth temperature from 850 to 5000C..I The difficulties in the epitaxy of nitrides at temperatures below 1000C arise mainly from the low decomposition efficiency of the commonly used nitrogen precursor ammonia at lower temperatures.
		In this paper, we studied the influence of the pulse sequence and the growth temperature on the properties of InGaN grown in a FME growth mode using a conventional metalorganic chemical vapor deposition (MOCVD) reactor.
	www.findarticles.com /p/articles/mi_qa3776/is_199710/ai_n8769953 (357 words)

	Semiconductor materials - Wikipedia, the free encyclopedia
		These materials can be classified according to the periodic table groups from which their constituent atoms come.
		The group III nitrides have high tolerance to ionizing radiation, making them suitable for radiation-hardened electronics.
		Aluminium gallium indium phosphide (AlGaInP, also InAlGaP, InGaAlP, AlInGaP)
	en.wikipedia.org /wiki/Semiconductor_materials (171 words)

	An unexpected discovery could yield a full spectrum solar cell
		BERKELEY, CA — Researchers in the Materials Sciences Division (MSD) of Lawrence Berkeley National Laboratory, working with crystal-growing teams at Cornell University and Japan's Ritsumeikan University, have learned that the band gap of the semiconductor indium nitride is not 2 electron volts (2 eV) as previously thought, but instead is a much lower 0.7 eV.
		Image: A newly established low band gap for indium nitride means that the indium gallium nitride system of alloys (In1-xGaxN) covers the full solar spectrum.
		Image: Light emitting diodes made of indium gallium nitride held clues to the potential new solar cell material.
	www.spacehike.com /berkeleysolar.html (1451 words)

	Science@Berkeley Lab: Conductivity is More Than Skin Deep
		It's almost too easy to make n‑type indium nitride — even native, undoped InN is n-type — but it has proved almost impossible to make the p‑type.
		Moreover, says MSD team member Joel Ager, "Dangling bonds are found on the surface of indium nitride, where they create an n‑type accumulation layer impervious to chemical or physical treatment."
		Photoluminescence — light emission after exciting the sample with a laser — also changed with step-wise increases in the radiation dose, as holes in the doped samples were displaced by electrons.
	www.lbl.gov /Science-Articles/Archive/sabl/2006/May/01-conductivity.html (1470 words)

	Santosh Shrestha - School of Physical, Environmental and Mathematical Sciences (PEMS) - UNSW@ADFA
		Indium nitride (InN) has potential for application in high-speed and high-power transistors.
		However, quality material of this type is still under development and material properties such as film stoichiometry and the role of impurity elements are not well understood.
		Timmers, S.K. Shrestha, A.P. Byrne, The potential of ion beam techniques for the development of indium nitride, Journal of Crystal Growth, 269 (2004), 50-58.
	www.unsw.adfa.edu.au /pems/student/postgrads/shrestha (616 words)

	Evidence for atomic scale disorder in indium nitride from perturbed angular correlation spectroscopy
		The crystal lattice of bulk grains and state-of-the-art films of indium nitride was investigated at the atomic scale with perturbed angular correlation spectroscopy using the
		The consistency of the experimental results and their independence of the preparation technique suggest that the origin of the broad frequency distribution is inherent to indium nitride, indicating a high degree of disorder at the atomic scale.
		Due to the low dissociation temperature of indium nitride, furnace and rapid thermal annealing at atmospheric pressure reduce the lattice disorder only marginally.
	stacks.iop.org /0953-8984/17/6037 (402 words)

	[No title]
		Ten years ago, most researchers considered the III nitrides to be laboratory curiosities, unlikely to be of great practical importance.
		The III nitrides are probably now the third most economically important class of semiconductors, behind only Si and GaAs.
		S.M. Donovan and S.J. Pearton, "Optical and structural studies of compositional inhomogeneity in strain-relaxed indium gallium nitride films", 2000 IEEE International Symposium on Compound Semiconductors (Institute of Electrical and Electronics Engineers, Inc., 2000), pp.
	www.ceramics.nist.gov /programs/thinfilms/IIINitrides.html (1127 words)

	Material soaks up the sun TRN 121102
		The researchers' initial testing also shows that the material withstands high energy particle irradiation without breaking down.
		So the samples were indium-oxygen-nitride alloys rather than indium nitride," said Walukiewicz.
		They are also working to make p-type gallium indium nitride, he said.
	trnmag.com /Stories/2002/121102/Material_soaks_up_the_sun_121102.html (1172 words)

	PRESS RELEASE TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures (Site not responding. Last check: 2007-10-24)
		TDI Demonstrates Indium Nitride Epitaxial Materials and Nano-Structures
		Novel 2-inch diameter InN-on-sapphire templates and InN/GaN heterostructures will be featured at the 6th International Conference on Nitride Semiconductors in Bremen, Germany, from August 27 through September 3 this year.
		Optoelectronic and electronic devices based on Group III Nitride materials (GaN, AlN, InN) are the subject of intense development for various applications including solid state lighting, bio and chemical detection systems, environmental, communication and military equipment.
	www.marketwire.com /mw/release_html_b1?release_id=93534 (394 words)

	An unexpected discovery could yield a full spectrum solar cell
		A newly established low band gap for indium nitride means that the indium gallium nitride system of alloys (In 1-x
		Light emitting diodes made of indium gallium nitride held clues to the potential new solar cell material.
		Investigations of indium gallium nitride have also been reported in "Unusual properties of the fundamental band gap of InN," by Wu, Walukiewicz, Yu, Ager, Haller, Lu, Schaff, Yoshiki Saito, and Yasushi Nanishi, Applied Physics Letters, 27 May 2002, and in "Small band gap bowing in In 1-x
	www.lbl.gov /LBL-Science-Articles/Archive/MSD-full-spectrum-solar-cell.html (1378 words)

	References in Russian Journal of Physical Chemistry (Site not responding. Last check: 2007-10-24)
		Investigation of the thermodynamic properties of indium nitride
		Thermodynamic properties of aluminum nitride in the temperature range of 2.6-300 K
		Synthesis of gallium nitride in a stream of active nitrogen
	nsr.mij.mrs.org /refs/rjpc (72 words)

	[No title]
		Indium nitride (InN) and indium gallium nitride (InGaN) are promising materials for optoelectronic applications such as high efficiency conversion of near infrared optical pulses to submillimeter wave pulses with bandwidth in the terahertz frequency range.
		This project entails the optical and electrical study of polarization- and strain-induced electric fields in n-InN epilayers and InN/InGaN multiple quantum wells to determine their suitability for use as terahertz radiation emitters under femtosecond pulse excitation.
		Indium nitride (InN) and indium gallium nitride (InGaN) are promising materials for optoelectronic applications such as high efficiency full-spectrum solar cells.
	www.ee.umd.edu /RITE/peer05_project_descs.htm (624 words)

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