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Topic: Insulated Gate Bipolar Transistor

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	IGBT - Insulated Gate Bipolar Transistors :: Joliet Technologies
		Power Bipolar Transistor and Power MOSFET are the most commercial advanced devices.
		Power Bipolar Transistors have lower conduction losses in the on-state, larger blocking voltages, but low switching speed.
		Such the device is know as the Insulated Gate Bipolar Transistor (IGBT).
	www.joliettech.com /igbt-insulated_gate_bipolar_transistors.htm (779 words)

	Insulated Gate Bipolar Transistor Drives
		In newer drives, such as the 1336 PLUS AC Drive shown on the left, the transistors may be replaced by insulated gate bipolar transistors (IGBTs).
		From this section one can see that one IGBT of each pair is connected to the positive bus and a second is connected to the negative bus.
		The IGBTs operate similarly to the transistors in that they are cycled on and off at high frequencies within the overall waveform of a sine wave.
	www.industrial-electronics.com /output_devices_amplifiers_valves_relays_variable-frequency_drives_stepper_motors_servomotors/AC-drives-5-3_Insulated-Gate-Bipolar-Transistor-Drives.html (237 words)

	Insulated gate bipolar transistor with reduced susceptibility to parasitic latch-up - Patent 5396087
		The insulating region prevents electrical conduction between the second base region and the field effect transistor and, in particular, suppresses minority carrier injection from the second base region to the source of the field effect transistor which is electrically connected to the cathode contact.
		The insulated gate bipolar transistor of claim 10, wherein said field effect transistor has a drain region in said first base region and wherein said first base region is a relatively lightly doped region of said first conductivity type and wherein said drain region is a relatively highly doped region of said first conductivity type.
		The insulated gate bipolar transistor of claim 12, further comprising a relatively highly doped region of said first conductivity type at said face, between said second base region and said third base region and wherein said first base region is a relatively lightly doped region of said first conductivity type.
	www.freepatentsonline.com /5396087.html (5322 words)

	Insulated Gate Bipolar Transistor (Site not responding. Last check: )
		Ein Insulated Gate Bipolar Transistor (IGBT) ist ein Halbleiterbauelement, welches zunehmend in der Leistungselektronik verwendet wird, da es die Vorteile des Bipolartransistors (gutes Durchlassverhalten, hohe Sperrspannung) und die Vorteile eines Feldeffekttransistors (nahezu leistungslose Ansteuerung) vereinigt.
		Vorteilhaft ist auch eine gewisse Robustheit gegenüber Kurzschlüssen, da der IGBT den Laststrom begrenzt.
		Beim IGBT handelt es sich wie beim FET um ein spannungsgesteuertes Bauelement.
	www.jenskleemann.de /wissen/bildung/wikipedia/i/in/insulated_gate_bipolar_transistor.html (245 words)

	Power application circuits utilizing bidirectional insulated gate bipolar transistor - Patent 5852559
		IGBT 100 conducts current across a current path from contact 104 to contact 102 when a positive voltage bias is provided from contact 104 to contact 102 and a positive gate potential beyond the MOSFET threshold voltage is provided to gate 106.
		Gate electrodes 105 and 107 are preferably made from polysilicon, and each of gate electrodes 105 and 107 has a width of at least 10micrometers.
		Once gate potential at electrode 107 reaches beyond a MOSFET threshold voltage, preferably a voltage of at least 2 volts, a channel under gate contact 108 is formed and electrons are injected from region 202 at contact 104 through portion 198 of region 190 to drift region 160.
	www.freepatentsonline.com /5852559.html (6358 words)

	Lessons In Electric Circuits -- Volume III (Semiconductors) - Chapter 6
		Insulated gate field-effect transistors are unipolar devices just like JFETs: that is, the controlled current does not have to cross a PN junction.
		Indeed it is, for when a controlling voltage is applied between gate and source, the conductivity of the channel is changed as a result of the depletion region moving closer to or further away from the gate.
		If a bipolar junction transistor is used to control a large collector current, there must be a substantial base current sourced or sunk by some control circuitry, in accordance with the β ratio.
	www.faqs.org /docs/electric/Semi/SEMI_6.html (2239 words)

	The Insulated Gate Bipolar Transistor (IGBT)
		The effect is to change this into a bipolar device as this p-type region injects holes into the n-type drift region.
		The inclusion of this layer however drastically reduces the reverse blocking capability of the device as this is dependent on the breakdown voltage of junction J3, which is reverse biased under reverse voltage conditions.
		It is this conductivity modulation which gives the IGBT its low on-state voltage because of the reduced resistance of the drift region.
	www.elec.gla.ac.uk /groups/dev_mod/papers/igbt/igbt.html (677 words)

	Insulated Gate Bipolar Transistor Selector Guide
		The thyristor fromed by PNP - NPN transistor coupling has its base and emitter shorted by aluminum patterning to disable it from operating and is therefore considered irrelevant to the basic operation of IGBTs.
		Consequently, the equivalent circuit and basic operating mechanism of IGBTs are the same as those of a MOS-input inverted Darlington transistor comprised of an N-channel enhancement MOSFET in its input stage and a PNP transistor on the output stage.
		IGBTs are constructed in such a way that first, the gate voltage is applied to form a channel and then the base current of the PNP transistor is supplied, letting the circuit turn on eventually as an IGBT.
	www.nteinc.com /Web_pgs/igbt.html (203 words)

	IGBT (Power System Blockset) (Site not responding. Last check: )
		The IGBT turns on when the collector-emitter voltage is positive and greater than Vf and a positive signal is applied at the gate input (g > 0).
		The first input and output are the IGBT terminals connected respectively to collector (c) and emitter (e).
		As the IGBT is modeled as a current source, it cannot be connected in series with an inductor, a current source, or an open circuit, unless a snubber circuit is used.
	web.ece.umr.edu /computing/unix/software/matlab/toolbox/powersys/igbt.html (566 words)

	PCB Bus Bars: Bus Bars on Printed Circuit Boards - ELDRE Corporation
		An IGBT, Insulated Gate Bipolar Transistor, is a switching transistor controlled by voltage applied to the gate terminal.
		IGBT Modules are expected to take applications away from both MOSFET modules and Bipolar Darlington Modules as they will operate in hard switching applications from 20 KHz and higher in soft switching applications.
		The insulation overlap should be at least equivalent to the overall thickness of the bus bar if it is sealed by laminating only.
	www.busbar.com /power/igbt.asp (638 words)

	Insulated Gate Bipolar Transistor On GlobalSpec
		Gate Drivers (47 companies) Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
		Gate Drive Transformers (18 companies) Gate drive transformers are used to drive high-speed switching devices such as field effect transistors (FET) and insulated gate bipolar transistors (IGBT).
		Transistors, All Types (381 companies) Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
	igbt.globalspec.com /Industrial-Directory/Insulated_Gate_Bipolar_Transistor (1237 words)

	Field-effect-controlled thyristors : THYRISTORS
		However, if a negative gate voltage is applied (with respect to the anode, which is at nearly the same voltage as the cathode in the latched state), the lower MOSFET will turn on and "short" between the lower (NPN) transistor's base and emitter terminals, thus forcing it into cutoff.
		So, a brief positive pulse to the gate turns the MCT on, a brief negative pulse forces it off, and no applied gate voltage lets it remain in whatever state it is already in.
		Zero gate voltage allows the thyristor to remain in whatever state it was previously in (off, or latched on).
	www.allaboutcircuits.com /vol_3/chpt_7/10.html (511 words)

	IGBT (SimPowerSystems)
		The IGBT is simulated as a series combination of a resistor Ron, inductor Lon, and a DC voltage source Vf in series with a switch controlled by a logical signal (g > 0 or g = 0).
		The IGBT device is in the off state when the collector-emitter voltage is negative.
		The IGBT block contains a series Rs-Cs snubber circuit, which is connected in parallel with the IGBT device (between nodes C and E).
	www.weizmann.ac.il /matlab/toolbox/powersys/igbt.html (577 words)

	Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors.
		Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors.
		NPN general purpose transistors; 50 V, 100 mA
		Bipolar NPN Device in a Hermetically sealed TO5 Metal Package.
	www.datasheetcatalog.com /catalog/p39320.shtml (94 words)

	IGBT - Insulated Gate Bipolar Transistor at Allied Electronics
		Transistor, IGBT; D-56; IGBT; 300 A; 1200 V; 20 V; 5.5 V (Typ.)
		Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
		Transistor; IGBT; TO-247AC; 40 A (Max.); 600 V (Max.); 160 W (Max.); -55 degC
	www.alliedelec.com /Catalog/Indices/Products.asp?sid=460EF6006463E17F&N=4294965519 (125 words)

	IGBT: Insulated Gate Bipolar Transistor, The educational encyclopedia
		DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven.
		IGBT basics it has a MOS gate input structure, which has a simple gate control circuit design and is capable of fast switching up to 100kHz.
		Additionally, because the IGBT output has a bipolar transistor structure, its current conduction capability is superior to a bipolar power transistor.
	www.educypedia.be /electronics/composemiigbt.htm (0 words)

	Insulated Gate Bipolar Transistor Manufacturer exporting direct from China
		Insulated Gate Bipolar Transistor Manufacturer exporting direct from China
		See more IGBT, Insulated gate bipolar transistor, Transistor products from this supplier.
		Copyright Notice © 1999-2007 Alibaba.com Corporation and its licensors.
	r-switch.en.alibaba.com /product/200015862/200378455/Electronic_component/Insulated_Gate_Bipolar_Transistor.html (169 words)

	Study on design and fabrication of insulated gate bipolar transistor
		Power Bipolar Transistor and Power MOSFET are the maost commercial advanced devices.
		Furthermore, its power rating can be improved by increasing both current and volttage.
		Thedesign, the fabrication process, the packing assembly and the experimental results of discrete planar and vertical IGBT are studied and reported in this thesis.
	www.kmitl.ac.th /~ktwisut/poopol_ab.htm (294 words)

	Powerex Insulated Gate Bipolar Transistor (IGBT) Modules-including Trench Gate and HVIGBTs
		Powerex Insulated Gate Bipolar Transistor (IGBT) Modules-including Trench Gate and HVIGBTs
		Powerex has committed its technical team to develop more user-friendly IGBT (Insulated Gate Bipolar Transistor) modules that provide more efficient operation, greater application ruggedness, and longer life.
		For more information on our IGBTs, see the technical library resources for IGBTs
	www.pwrx.com /summary/IGBT.aspx (156 words)

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