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	Ion implantation -- Facts, Info, and Encyclopedia article (Site not responding. Last check: 2007-10-22)
		Ion implantation is used in (Click link for more info and facts about semiconductor device fabrication) semiconductor device fabrication and in metal finishing, as well as various applications in (Click link for more info and facts about materials science) materials science research.
		Ions gradually lose their energy as they travel through the solid, both from occasional collisions with target atoms (which cause abrupt energy transfers) and from a mild drag from overlap of electron orbitals, which is a continuous process.
		For example, after the implantation of nickel ions into a silicon wafer, a layer of nickel silicide can be grown in which the crystal orientation of the silicide matches that of the silicon.
	www.absoluteastronomy.com /encyclopedia/i/io/ion_implantation.htm (1361 words)

	Ion implantation - Open Encyclopedia (Site not responding. Last check: 2007-10-22)
		Ion implantation is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid.
		Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research.
		Ion implantation equipment typically consists of an ionization chamber, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
	open-encyclopedia.com /Ion_implantation (1155 words)

	An Introduction to PSII (Site not responding. Last check: 2007-10-22)
		Ion implantation is a process by which ions are accelerated to a target at energies high enough to bury them below the target's surface.
		Ion implantation was developed as a means of doping the semiconductor elements of integrated circuits.
		Ion implantation of specific tools is now preferred over other types of coating technologies because the ion implanted layer doesn't delaminate, doesn't require high processing temperatures to produce, and doesn't add more material on the surface (which would change the size of critical components).
	silver.neep.wisc.edu /psii/intro.htm (392 words)

	Ion Implantation (Site not responding. Last check: 2007-10-22)
		Ion implantation is the introduction of ionized dopant atoms into a substrate with enough energy to penetrate beyond the surface.
		The exit beam of desired implant ions is chosen based on the charge-to-mass ratio of the ions, and the analyzer is generally sensitive enough to discriminate against adjacent mass numbers.
		The Implantation Calculator calculates the depth of implantation given the type and energy of ion, the initial substrate doping concentration, and the implantation dose.
	www.ece.gatech.edu /research/labs/vc/theory/ionimplant.html (643 words)

	Ion implantation in silicon technology - The Industrial Physicist
		Ions may be allowed to travel through a beam line at the energy at which they were extracted from a source material, or they can be accelerated or decelerated by dc or radio-frequency (RF) electric fields.
		Among semiconductor-processing techniques, ion implantation is nearly unique in that process parameters, such as concentration and depth of the desired dopant, are specified directly in the equipment settings for implant dose and energy, respectively (Figure 1, above).
		Accelerating ions to higher energies requires a longer beam line, yet low-energy beams are difficult to transport intact over longer distances because the beam cross section expands to a point where it can no longer travel down the beam tube.
	www.aip.org /tip/INPHFA/vol-9/iss-3/p12.html (2118 words)

	Surface Hardening by Ion Implantation
		Ion implantation revolutionised microchip manufacture in the 1970s by allowing controlled levels of specific metallic elements to be introduced into the surface and near-surface layers of semiconductors, using a controllable ion beam in a hard vacuum.
		The beam of high-speed ions is focused on the workpiece, penetrating the surface and, depending on the type of ion, producing mechanical and chemical changes.
		A significant advantage of ion implantation is that the treated surface is an integral part of the workpiece and does not suffer from possible adhesion problems associated with coatings.
	www.azom.com /details.asp?ArticleID=552 (1043 words)

	James Ziegler - SRIM & TRIM (Site not responding. Last check: 2007-10-22)
		Ion Stopping and Range in Targets: Most aspects of the energy loss of ions in matter are calculated in SRIM, the Stopping and Range of Ions in Matter.
		Ion Implantation: Ion beams are used to modify samples by injecting atoms to change the target chemical and electronic properties.
		Ion Transmission: Ion beams can be followed through mixed gas/solid target layers, such as occurs in ionization chambers or in energy degrader blocks used to reduce ion beam energies.
	www.srim.org (1138 words)

	ION IMPLANTATION PROCESS (Site not responding. Last check: 2007-10-22)
		Ion implantation is a potential enhancement method for chrome plating or other plating processes, as well as a process that can improve engineering properties of substrate materials.
		Ion implantation is a surface modification process in which ions are injected into the near-surface region of a substrate.
		During the conventional Ion Implantation Process, a beam of positively charged ions of the desired element (either a gas such as nitrogen or a metal such as boron) is formed.
	p2library.nfesc.navy.mil /P2_Opportunity_Handbook/1_12.html (1803 words)

	Process for producing bi-polar charge coupled devices by ion-implantation - Patent 4231810
		Substantially simultaneously during this ion implantation step, the gaps adjacent the aluminium humps 8 not covered by the polysilicon layer 6 are subjected to an ion implantation, preferably with phosphorus, so as to form regions 93.
		During the third ion implantation step, phosphorus is introduced with an energy of about 100 KV into the openings or windows 91 and into the areas between the aluminium humps 8 and the polysilicon layer 6.
		An exemplary deep phosphorus ion implantation comprises implanting phosphorus ions with an energy of about 300 KV and in a dose of about 8.times.10.sup.12 ions cm.sup.-2 (which is approximately equal to 8.times.10.sup.17 ions cm.sup.-3).
	www.freepatentsonline.com /4231810.html (3015 words)

	ipedia.com: Ion implantation Article (Site not responding. Last check: 2007-10-22)
		Ion implantion equipment typically consists of an ionization chamber, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
		Typical ion energies are in the range of 10 keV to 500 keV.
		Dopant ions such as boron, prosphorous or arsenic are generally created from a gas source, so that the purity of the source can be very high.
	www.ipedia.com /ion_implantation.html (1197 words)

	research program ion implantation (Site not responding. Last check: 2007-10-22)
		This program is focussed on the development of ion implantation techniques for the construction of an array of single phosphorous atoms in a silicon matrix for fabrication of the solid state Kane quantum computer (B.E. Kane, Nature, 393 (1998) 133-7).
		In this strategy the implantation of ions is essentially randomly positioned, so the yield of usefully-spaced atoms is low.
		The second strategy involves low dose rate ion implantation through a precision mask that can be positioned at the desired locations on the silicon substrate.
	www.ph.unimelb.edu.au /~vconrad/marc_coe/research/ion_implantation.htm (439 words)

	Ion Implantation
		The nature of defects introduced by ion implantation and their subsequent interaction during high temperature processing with the implanted ion species is of considerable technological and recent scientific interest.
		If ion implantation is to continue being used for future device generations, it is imperative that we understand and attempt to control the phenomenon of Transient Enhanced Diffusion (TED).
		TED is observed upon annealing ion implanted silicon, we notice that the diffusion of the ion implanted species is enhanced by several orders of magnitude compared to the bulk diffusivity.
	www-ssrl.slac.stanford.edu /newsletters/1997/ion_implantation.html (1261 words)

	Nanosystems in Ceramic Oxides Created by Means of Ion Implantation (Site not responding. Last check: 2007-10-22)
		Ion implantation of the cluster atoms into solid target materials is a convenient way to achieve embedded nanoclusters.
		In this study, all clusters were created by means of ion implantation and, mainly, large clusters in the nanometer size range (1 to 10 nm) are investigated.
		In this thesis the focus is both on the creation of the nanoclusters by ion implantation and subsequent thermal annealing, and on the study of the material properties of these nanoclusters.
	www.coronetbooks.com /books/nano4423.htm (292 words)

	Spire Corporation - Biomedical (Site not responding. Last check: 2007-10-22)
		Ion implantation is a high technology approach for modifying surface properties of materials.
		Examples of components treated with ion implantation are Ti and Co-Cr orthopedic prostheses, which are made harder and more wear resistant with the process (IonGuard®), and silicone rubber catheters, which are made less tacky and more water wettable for improved insertion and biological compatibility (Spi-Polymer®).
		Ions are initially formed by stripping electrons from source atoms in a plasma.
	www.spirebiomedical.com /Biomedical/ionimpl.html (685 words)

	ISC \| Surface Treatments For Medical Devices \| Ion Implantation (Site not responding. Last check: 2007-10-22)
		Ion implantation is a low-temperature vacuum technology that uses a linear accelerator to create a beam of charged atoms, or ions.
		The ion beam is then shaped and directed toward the device surface, embedding ions into the material.
		Ion implantation is used on the stem tapers to reduce fretting wear dramatically.
	www.implantsciences.com /products/surface/ion_implantation.html (266 words)

	Journal of Electronic Materials: Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut
		INTRODUCTION Plasma immersion ion implantation (PIII) is an emerging technology for high dose-rate implantation.l-' The physical principle of PIII is illustrated in Fig.
		This contrasts sharply with conventional implantation where an ion beam is scanned across the wafer and the implantation time scales with the square of the wafer radius.
		The plasma ion densities were monitored using a SXP 300 VG quadrupole in connection with a CMX 500 cylindrical mirror energy analyzer.
	www.findarticles.com /p/articles/mi_qa3776/is_199809/ai_n8816236 (1459 words)

	Titanium and Titanium Alloys — The Ion Implantation Process, Advantages, Charateristics and Applicat
		In the ion implantation process, ions, (usually nitrogen) are implanted into the surface of the components to modify the surface structure and composition.
		The ions are projected towards the surface in a high energy beam which penetrates the surface leaving a nitrogen rich zone.
		In the food processing, chemicals and engineering sectors the unique benefits of ion implantation are used for the enhancement of a wide range of precision components.
	www.azom.com /details.asp?ArticleID=2696 (302 words)

	Active Skim View of: Chapter 5--Ion Implantation and Surface Modification
		Two general methods are in use today: ion beam implantation, in which a beam of ions is directed toward a substrate, and plasma implantation, in which the ions produced in a plasma discharge surrounding or near the object to be implanted are extracted from the plasma and accelerated into the object.
		Ion implantation is designed to modify the surface properties of materials without changing their bulk properties.
		Implantation of Metals Recent work using this process has shown remarkable improvement in properties of nitrogen-implanted alloy die steel and of nitrogen-implanted aluminum tools for machining high-temperature alloys.
	www.nap.edu /nap-cgi/skimit.cgi?isbn=NI000211&chap=15-18 (377 words)

	Ion Implantation
		Ion Beam Analysis (IBA) is based on the interaction, at both the atomic and the nuclear level, between accelerated charged particles and the bombarded material.
		Ion Beam Laboratory at the University of Virginia -We study the interaction of energetic ions with solid to understand the mechanisms leading to electronic excitations and how these excitations evolve and lead to the emission of light (luminescence), electrons, radiation, atoms and molecules (sputtering), and to radiation damage, chemical changes or heat.
		Ion Implantation and Ion Beam Analysis Current research includes ion beam synthesis of compounds, control of implantation profiles by multiple ion implants and ion beam mixing of quantum wells for the fabrication of opto-electronic devices.
	www.casetechnology.com /links.html (4102 words)

	Ion Implantation (Site not responding. Last check: 2007-10-22)
		A high vacuum chamber houses the UWO ion implantation facility.
		Ion beams of virtually any element are provide by a 1.7 MV tandem accelerator.
		This system is fitted with an optical probe for in situ studies of implant damage and recovery.
	www.uwo.ca /isw/facilities/Tandetron/IonImp.htm (122 words)

	Capabilities and Capacity in Ion Implantation Services (Site not responding. Last check: 2007-10-22)
		Implant Sciences offers implantation of such ions as boron, arsenic, magnesium, and phosphorus with precise doping accuracy, high uniformity and guaranteed repeatability.
		Over 60 ion beam species are available for implantation in addition to a wide range of implantation capabilities.
		The only ions implanted in this instrument are non-dopants such as Silicon and Germanium for implants of exceptional purity.
	www.implantsciences.com /products/semi_apps/ion_implantation.html (905 words)

	EIF European Implant Foundry Ion implantation
		EIF is the preferred source of ion implantation services by many leading wafer fabs in Europe.
		Semiconductor Ion Implantation, Ion implantation and Aluminium Implantation.
		Ion Implantation / Aluminium Implant / EIF / Implant Foundry
	www.eif-uk.com (205 words)

	Ion Implantation of Perfluoropolyether-Lubricated Surfaces for Improved Tribological Performance
		The corresponding surface microstructures induced by ion implantation were obtained from x-ray diffraction and conversion electron Mssbauer spectroscopy.
		Ion implantation produced microstructures primarily consisting of amorphous structures.
		Shogrin, B., et al.: The Effects of Ion Implantation on the Tribology of Perfluoropolyether-Lubricated 440C Stainless Steel Couples.
	www.lerc.nasa.gov /WWW/RT1996/5000/5140j.htm (470 words)

	ANSTO Service Capabilities. Plasma immersion ion implantation (Site not responding. Last check: 2007-10-22)
		Ion implantation causes ionised atoms to penetrate below the surface of a material, giving it unique electronic, mechanical or chemical properties.
		Although extensively used in the microelectronics industry, ion implantation has not been adopted by the broader manufacturing industry despite the proven potential of high energy ion bombardment to improve the surface properties of many materials.
		Lower treatment temperatures are possible because energetic ion bombardment is used to build up high concentrations of nitrogen in the surface, independent of the normal thermochemical absorption processes.
	www.ansto.gov.au /ansto/capability/cs13.html (355 words)

	Thin Layer Deposition: Highlighting Ion Implantation and Epitaxy - Market Research Report
		Ion implantation and molecular beam epitaxy (MBE) are critical technologies in semiconductor manufacturing.
		This new BCC study highlights the established beamline ion implantation process, the emerging plasma immersion ion implantation process, ion assisted deposition, and MBE.
		The use of ion implantation and ion assisted deposition in the medical and industrial markets is studied as well.
	www.mindbranch.com /products/R2-563.html (208 words)

	Journal of Electronic Materials: Al, B, and Ga ion-implantation doping of SiC
		Acceptor ion implantation into SiC must be followed by high-temperature annealing between 15001700degC8,11 in order to repair ion-induced lattice damage, and to electrically activate dopants.
		A series of single-energy aluminum, boron, and gallium ion implants in the range 50 keV to 4 MeV were performed into Si face, 3.5 off-axis, 6H-SiC n-type epilayers with 5 gm to 10 Jim thickness and a doping density of 6 x 1015 to 1 X 1016 cm-3.
		For this reason we have performed low doping concentration (up to 1011 cm3) multiple-energy Al and B ion-- implantations in n-type 411-SiC epitaxial layers to a depth of 1.2 gm and annealed the material at 1600degC/ 15 min (for Al) and 1650degC/10 min (for B).
	www.findarticles.com /p/articles/mi_qa3776/is_200011/ai_n8924723 (1208 words)

	Ion Implantation of SiC (SiCEP)
		Ion implantation has been recognised as a key technology for processing of planar SiC devices, since thermal diffusion of dopants is negligible even at very high temperatures.
		Inherent in the implantation doping technique, however, is damaging of the crystal lattice and this damage is substantial for compound materials such as SiC.
		The work spans from studying the defect formation and identifying simple point defects created by low doses of ions, through an intermediate dose range, when more extended complexes are formed until finally, at high doses, the material turns amorphous.
	www.it.kth.se /forskningsprojekt-detalj.html?lang=en&projektid=109& (332 words)

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