| | Solid state ionization chamber of silicon PN-junction type US Patent 4039808 |
 | | The solid state ionization chamber according to the present invention is inexpensive and simple, and yet it has a high radiation resistance, and in addition, its solar cell is easily replaceable for ensuring a long service life, whereby, it is freed from the aforesaid shortcmings of conventional ionization chambers. |
 | | The gaseous ionization chamber probe, which is expensive and vulnerable, is not practical for monitoring and routine measurement in the field of high dose rate. |
 | | The conventional gaseous ionization chamber for measuring high dose rates is expensive and easily susceptible to radiation damage, so that it has not been possible to use such a gaseous ionization chamber as a routine dosimeter or a monitor. |
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