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| | Publications & Patents (Jung-Suk Goo) |
 | | Hwang, J.-S. Goo, H. Kwon, and H. Shin, " Enhanced Degradation of nMOSFET's under Hot Carrier Stress at Elevated Temperatures Due to The Length of Velocity Saturation Region," IEEE International Integrated Reliability Workshop (Former the Wafer Level Reliability Workshop), Final Report, Lake Tahoe, California, USA, Oct. 16-19, 1994, pp. |
 | | Hwang, J.-S. Goo, H. Kwon, and H. Shin, "Impact of Oxide Electric Field on Hot-carrier Reliability Characteristics," 184th Meeting of the Electrochemical Society, New Orleans, Louisiana, USA, Oct. 10-15, 1993, Late News. |
 | | J.S. Goo, H. Shin, H. Hwang, D.G. Kang, and D.H. Ju, "Universal Behavior of Hot-Carrier Degradation in LDD NMOSFET's," Ext. |
| www-tcad.stanford.edu /~goojs/paper.html (1621 words) |
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