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ICNS-4 Program (Site not responding. Last check: 2007-10-30) |
 | | PROPEPERTIES OF Si-DOPED GaN LAYERS GROWN BY HVPE. |
 | | EPITAXIAL GROWTH OF GAN FILMS ON (Mn,Zn)Fe Jitsuo Ohta, Hiroshi Fujioka, Hiroyuki Takahashi, and Masaharu Oshima, Dept of Applied Chemistry, The University of Tokyo, JAPAN. |
 | | THE INVESTIGATION ON A GaN EPILAYER GROWN ON (11-20) SAPPHIRES BY MOCVD. |
| lucy.mrs.org /meetings/icns-4/program/symposia (13205 words) |
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