| | Journal of Electronic Materials: RT lasing via nanoscale CdSe islands in a (Zn, Mg)(S,Se) matrix (Site not responding. Last check: 2007-10-09) |
 | | As it follows from this figure, lasing spectrum recorded in the waveguide geometry is still 16 meV Stokes shifted toward lower energies with respect to the PL peak recorded from the structure surface and the exciton resonance energy in the OR spectrum. |
 | | Lasing threshold is clearly demonstrated by the characteristic increase in the differential efficiency with increase in the excitation density and by the respective narrowing of the emission spectrum. |
 | | One should underline that the lasing wavelength is as low as 460 nm (2.69 eV) in the structure with the matrix bandgap energy E^sub g^ = 2.86 eV at 300K indicating the possibility of the ultimate shift of the lasing energy to the matrix bandgap. |
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