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Topic: MESFET

Related Topics

Field effect transistor

JFET

MOSFET

HEMT

Elpidio Quirino

	MESFET - Wikipedia, the free encyclopedia
		The difference is that instead of a using a p-n junction for a gate, a Schottky (metal-semiconductor) junction is used.
		MESFETs are usually constructed in GaAs, InP, or SiC (never silicon), and hence are faster but more expensive than silicon-based JFETs or MOSFETs.
		MESFETs are operated up to approximately 30 GHz and are commonly used for microwave frequency communications and radar.
	en.wikipedia.org /wiki/MESFET (124 words)

	MESFET
		The control of the channel is obtained by varying the depletion layer width underneath the metal contact which modulates the thickness of the conducting channel and thereby the current.
		The key advantage of the MESFET is the higher mobility of the carriers in the channel as compared to the MOSFET.
		The disadvantage of the MESFET structure is the presence of the Schottky metal gate.
	ece-www.colorado.edu /~bart/book/mesfet.htm (398 words)

	MESFET for dielectrically isolated integrated circuits - Patent 5014108
		A MESFET wherein a Schottky top gate which extends across the channel region between the source and drain regions and beyond sides of the dielectric isolation in which the device is built at two points.
		A MESFET according to claim 1, wherein said bottom gate region is spaced from a bottom surface of said island.
		A MESFET according to claim 12, wherein said bottom gate region is spaced from a bottom surface of said first region.
	www.freepatentsonline.com /5014108.html (2341 words)

	Device Simulation
		Advanced particle level simulation of the MESFET and MODFET devices are shown in the animations.
		MESFET and MODFET simulation AVI files are in ZIP format to reduce download time.
		The GaAs MESFET structure used in the simulations is shown in the Figure.
	www.geocities.com /ResearchTriangle/Lab/3526 (430 words)

	ANADIGICS: Engineers Room - GaAs MESFETs are Expected to Make BIG GAINS in Portable Communications Applications
		GaAs MESFET devices are similar to silicon metal-oxide semiconductor field-effect transistors (MOSFETs) in that they are majority carrier devices.
		Breakdown voltage for the MESFETs and diodes can be as high as 25 V. ANADIGICS expects GaAs MESFETs to be useful in charge-pump DC-to-DC converters and pulse width-modulated (PWM) DC-to-DC step upconverters and step downconverters.
		Use of the smaller SOT-25 package is made possible by the low ON resistance of GaAs MESFETs, resulting in a smaller transistor periphery and, hence, a reduced die size.
	www.anadigics.com /GaAsline/mesfets.html (1187 words)

	Method of producing recessed gate of MESFET in compound semiconductor - Patent 4910157
		A method according to claim 1, wherein said impurity ions are selected from the group consisting of Si ions, S ions and Se ions.
		A GaAs MESFET is widely used in the fields of satellite communication and ground micro-wave communication, etc.
		A GaAs MESFET then can be realized by forming an n.sup.+ GaAs contact layer 15, SiO.sub.2 layer 16, source and drain electrodes 17, and a gate electrode 20, as shown in FIG.
	www.freepatentsonline.com /4910157.html (1807 words)

	Ku-band MMIC Power Amplifiers Developed Using MSAG MESFET Technology \| February 8, ...
		Many different technologies, including MESFET, HBT and HEMT, are being pursued to develop MMIC power amplifiers1—6 in order to obtain the maximum output power (Pout) and power-added efficiency (PAE) from a single chip.
		The MSAG MESFET technology was selected to develop Ku-band power amplifiers because of its high across-the-wafer uniformity, excellent linearity and low cost capabilities.
		One of the basic requirements for achieving high power output and PAE on a single MMIC chip is the high across-the-wafer uniformity of the saturated drain-source current (IDSS) and device cut-off frequency (T) in order to combine all unit FET cells efficiently.
	www.mwjournal.com /Journal/article.asp?HH_ID=AR_465 (5132 words)

	A New Empirical Nonlinear Model for HEMT and MESFET Devices -- from Mathematica Information Center
		A new large signal model for HEMT's and MESFET's, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances is described.
		Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different delta-doped pseudomorphic HEMTs on MESFET.
		Measured and modeled dc and S-parameters are compared and found to coincide well.
	library.wolfram.com /infocenter/Articles/2472 (88 words)

	Research Review May 2004 – May 2005
		Then was the analysis of the MESFET mainly I-V characteristics and effect of applied gate voltage on the device.
		Various geometries of the MESFET were simulated and I-V curve was developed.
		The task was to develop a code for the Fourier decomposition method and single sinusoidal excitation.
	www.iit.edu /~dutttap/RR04_files/RR04.htm (228 words)

	MAX11014, MAX11015 Automatic RF MESFET Amplifier Drain-Current Controllers
		The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-to-point communication and other microwave base stations.
		Each device includes dual high-side current-sense amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the 0 to 625mV range.
		External diode-connected transistors monitor the MESFET temperatures while an internal temperature sensor measures the local die temperature of the MAX11014/MAX11015.
	www.maxim-ic.com /quick_view2.cfm?qv_pk=4491 (425 words)

	Microwave Journal: A 45GHz highly stable +15dBm low noise GaAs MESFET source using a GaAs PHEMT as a frequency doubler. ... (Site not responding. Last check: 2007-10-30)
		Microwave Journal: A 45GHz highly stable +15dBm low noise GaAs MESFET source using a GaAs PHEMT as a frequency doubler.
		A 45GHz highly stable +15dBm low noise GaAs MESFET source using a GaAs PHEMT as a frequency doubler.
		The advancement of GaAs MESFET and PHEMT technology has made it possible not only to generate signals at mm-wave frequencies, but to process them through frequency multipliers and amplifiers at...
	highbeam.com /doc/1G1:11683893/A+45GHz+highly+stable++...?refid=ip_hf (221 words)

	1999 Summary of Engineering Research - Electrical and Computer
		This program is to study the 50 GHz to 100 GHz ion implanted GaAs MESFET for millimeter-wave integrated circuit application.
		This project aims to reduce the minimum noise figure on the direct ion-implanted self-aligned GaAs MESFETs based on the design of experiments in terms of dose and gate overlay.
		This project is aimed at the technology transfer of the University of Illinois 0.25 µm gate GaAs MESFET for 24-GHz and 38-GHz MMICs for LNA and VCO to M/A-Com.
	www.engr.uiuc.edu /publications/engineering_research/1999/pg000107.htm (946 words)

	MESFET bias controllers for class A and AB amplifiers store compensation data
		The MAX11014 integrates closed-loop drain-current control for class A MESFET amplifier operation, while the MAX11015 sets the MESFET gate voltage for class AB operation.
		Each device includes dual, high-side, current-sense amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the 0 mV to 625 mV range.
		External diode-connected transistors monitor the MESFET temperatures, while an internal temperature sensor measures the local die temperature.
	rfdesign.com /news/products/Maxim-bias-controllers (482 words)

	RF Transistor operates from DC to 2.7 GHz., Cree Inc.
		The initial product based on this new process is the CRF-24010, a Class A/B 10 W SiC MESFET with a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs.
		This device has an IM3 of -31 dBc at a peak envelope power of 10 W, operates from DC to 2.7 GHz, and has multi-octave instantaneous bandwidth, making it ideal for a variety of broadband large signal applications.
		"We have received strong interest in the use of SiC RF MESFETs for a variety of very wide bandwidth communications applications, and the much higher gain of this new process should allow for even better performance and wider bandwidths to be obtained", stated John Palmour, Cree's Executive Vice President of Advanced Devices.
	news.thomasnet.com /fullstory/22990/772 (700 words)

	Microwave Journal: MESFET models for microwave computer-aided design. (micro electronic semiconductor field effect ... (Site not responding. Last check: 2007-10-30)
		Microwave Journal: MESFET models for microwave computer-aided design.
		Author: Trew, R.J. MESFET Models for Microwave Computer-Aided Design(*)
		The ability to fabricate GaAs microwave integrated circuits with increasing levels of sophistication is opening up new market opportunities for these devices.
	highbeam.com /doc/1G1:9167907/MESFET+models+for+microwave+... (166 words)

	Leadless GaAs MESFET SPDT switch comes in CSP package
		Toshiba America Electronic Components' (TAEC) has released a low-profile gallium arsenide (GaAs), MESFET single-pole dual throw (SPDT) switch that is suited for use in multiband and multimode cellular antenna switch modules (ASMs), Bluetooth (BT) modules and Wireless LAN (WLAN) applications.
		The control voltages are low, and 2.4 V switching operation is possible.
		This GaAs MESFET monolithic microwave integrated circuit (MMIC) features 0.35 dB insertion loss at 1GHz (0.40 dB at 2 GHz) and 24 dB isolation at 1 and 2 GHz.
	rfdesign.com /products/leadless-GaAs-switch (356 words)

	New Product Release: Industry's Only Integrated RF MESFET Bias Controllers for Point-to-Point Communications
		Note to the Editor: The MAX11014/MAX11015 are the first and only integrated RF MESFET bias controllers for point-to-point communication and microwave base stations.
		Available in a 48-pin, 7mm x 7mm x 0.8mm thin QFN package, these controllers uniquely integrate all the functions needed for closed-loop drain-current control (class A and class AB) of MESFET amplifiers.
		As all the blocks in the IC are designed and tested to work with each other, the user can achieve the best system-level performance with minimal design effort and cost.
	www.maxim-ic.com /view_press_release.cfm/release_id/1199 (507 words)

	MESFET R D Researcher JOB WANTED in Johor Bahru Johor @ Adpost.com Classifieds > Malaysia > MESFET R D Researcher JOB ... (Site not responding. Last check: 2007-10-30)
		MESFET R D Researcher JOB WANTED in Johor Bahru Johor @ Adpost.com Classifieds > Malaysia > MESFET R D Researcher JOB WANTED in Johor Bahru Johor,free,malaysian,classified ad,classified ads
		MESFET R D Researcher JOB WANTED in Johor Bahru Johor @ Adpost.com Classifieds
		Be a part of R&D team for producing MESFET semiconductor.
	www.adpost.com /my/employment/5712 (85 words)

	Microwave Performance of GaAs-on-Si MESFET's with Si Buffer Layers (Site not responding. Last check: 2007-10-30)
		Microwave Performance of GaAs-on-Si MESFET's with Si Buffer Layers
		The incorporation of silicon-buffer layers are shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFET'S. A current gain cutoff frequency (f1) of 18 GHz and maximum power gain cutoff frequency (fmax) of 30 GHz is reported for relaxed geometry devices.
		The low parasitic capacitance and excellent device isolation makes this structure suitable for monolithic integration.
	www.calce.umd.edu /articles/abstracts/1993/mesfet.htm (78 words)

	Integrated RF MESFET Bias Controllers for Point-to-Point Communications - 5/1/2006 - ECN (Site not responding. Last check: 2007-10-30)
		Integrated RF MESFET Bias Controllers for Point-to-Point Communications
		ICs Set and Control Bias Conditions for Dual MESFET Power Devices - Mar. 3 - 03/03/2006, ECN
		Use of this web site is subject to its Terms and Conditions
	www.ecnmag.com /article/CA6330542.html?industryId=19620 (285 words)

	ICs Set and Control Bias Conditions for Dual MESFET Power Devices - Mar. 3 - 3/3/2006 6:00:00 AM - ECN (Site not responding. Last check: 2007-10-30)
		ICs Set and Control Bias Conditions for Dual MESFET Power Devices - Mar. 3
		Maxim Integrated Products has introduced the MAX11014/MAX11015* ICs that set and control bias conditions for dual MESFET power devices found in point-to-point communication and other microwave base stations.
		Integrated RF MESFET Bias Controllers for Point-to-Point Communications - 05/01/2006, ECN
	www.ecnmag.com /article/CA6312291.html (360 words)

	mesfet - WikkiTikkiTavi (Site not responding. Last check: 2007-10-30)
		Mesfet is the abbreviation of MEtal-Semiconductor Field Effect Transistor.
		In other words, it is a non-cheap semiconductor device used in RadioFrequency electronics which can operate till 100GHz, a very huge frequency!
		Document last modified Wed, 03 Dec 2003 21:00:04
	tavi.sourceforge.net /index.php?page=mesfet (107 words)

	Small Signal GaAs Discontinued/Non-Promotive Parts List
		Low Noise L to K Band GaAs MESFET
		L to K Band Low Noise N-Channel GaAs MESFET
		GaAs MESFET L to S Band Low Noise Amplifier
	www.cel.com /prod/prod_gaasfetsdp.asp (100 words)

	Power GaAs MESFET achieves drain efficiency over 55., OKI Semiconductor
		Power GaAs MESFET achieves drain efficiency over 55., OKI Semiconductor
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	news.thomasnet.com /fullstory/463135/fyi (29 words)

	Gaas Mesfet Circuit Design by at Smarter.com (Site not responding. Last check: 2007-10-30)
		Home > Books > Misc Books > First Letter of Title G Misc Books > Gaas Mesfet Circuit Design
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	www.smarter.com /gaas_mesfet_circuit_design---pd--ch-1--pi-663168.html (119 words)

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