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Topic: MOSFET

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	MOSFET - Wikipedia, the free encyclopedia
		It used crystalline silicon for the semiconductor and a thermally oxidized layer of silicon dioxide for the insulator.
		First, smaller MOSFETs may allow more current to pass, due to their shorter length dimension; conceptually, MOSFETs are like resistors in the on-state, and shorter resistors have less resistance; however, they may also have smaller widths, leading to proportionally higher resistance, so the real issue is whether the ohms per square is reduced.
		Producing MOSFETs with channel lengths smaller than a micrometre is a challenge, and the difficulties of semiconductor device fabrication are always a limiting factor in advancing integrated circuit technology.
	en.wikipedia.org /wiki/MOSFET (4812 words)

	MOSFETs Basics
		This means that as the MOSFET heats up under high current conditions or a fast increasing current between drain and source, the impedance of the device increases thus limiting any further increase in current.
		The drain-source-gate characteristics of an enhancement MOSFET shown in figure 4a illustrate why a large gate source voltage is needed to keep the drain source voltage drop to a minimum.
		The design of MOSFET gate driver circuits is moderately simple but the increasing availability of integrated circuit MOSFET drivers and the ease of using them has led to a growing trend away from self designed circuits.
	powerdesigners.com /InfoWeb/design_center/articles/MOSFETs/mosfets.shtm (1806 words)

	Mosfets as amplifier output stage drivers app note
		Mosfet devices are very fast and switch several Amperes in nano seconds, which is 30 to 100 times faster than equivalent BiPolar devices.
		In practice the reliability of Mosfets in surviving real world abuse, usually overheating and driving output shorts, is vastly higher than that of comparably rated Bi Polar output stages, even with their usual extensive protection.
		Mosfet devices require very small amounts of current to operate correctly, allowing a much simpler drive circuit to be used, maximising reliability and performance.
	www.arx.com.au /Mosfets.htm (433 words)

	7.1 The MOSFET - Introduction
		The basic structure of an n-type MOSFET and the corresponding circuit symbol are shown in figure 7.1.1.
		The complementary MOSFET is the p-type or p-channel MOSFET.
		Individual MOSFETs which are commercialy available in a metal can or molded plastic package frequently contain a connection between the source and the back contact so that the source and drain contact can not be readily interchanged.
	ece-www.colorado.edu /~bart/book/mosintro.htm (836 words)

	MOSFET (Site not responding. Last check: 2007-09-10)
		The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET.
		Even more importantly, this isolation between the gate and channel effectively isolates a MOSFET in one logic state from earlier and consequent stages, since the gate of one MOSFET is usually driven by the output from a previous logic stage.
		Producing MOSFETs with channel lengths smaller than a micrometre is a tremendous challenge, and the difficulties of semiconductor device fabrication are always a limiting factor in advancing integrated circuit technology.
	mosfet.iqnaut.net (2107 words)

	[No title]
		The MOSFET will still be linear when the preceeding plate has bottomed out; a typical 12AX7 triode section just can't "saturate" in normal operation to much less than 50V.
		The 12V source is a zener fed by a large resistor from B+ that feeds a fraction of a milliamp to the zener.
		The MOSFET conducts the vast majority of the current, an so is the device that absorbs the waste heat.
	www.geofex.com /Article_Folders/mosfet_folly/mosfetfolly.htm (2158 words)

	NCSR - MOSFET
		In a simplified model you have a Drain and a Source connected by a channel, the conductance of the channel is controlled by the field across it (or the voltage from gate to the substrate/drain).
		The MOSFET, specifically CMOS (Complimentary Metal Oxide Semiconductor), has been one of the most versatile devices in Silicon, and is the building block for most VLSI/ULSI application.
		Depletion Type: This type of MOSFET has a built in channel, and thus has connectivity even when the gate to body (the body is usually connected to the source) voltage is zero.
	www.onr.navy.mil /sci_tech/31/312/ncsr/devices/mosfet.asp (495 words)

	MOSFET (Power System Blockset)
		The MOSFET device turns on when the drain-source voltage is positive and a positive signal is applied at the gate input (g >0).
		The first input and output are the MOSFET connections to drain (d) and source (s).
		Run the simulation and observe the gate pulse signal, the MOSFET current, the capacitor voltage and the diode current on the four trace scope block.
	www.cs.berkeley.edu /titan/sww/software/matlab/toolbox/powersys/mosfet.html (616 words)

	AMZ Mosfet Booster Guitar Effect
		The BS170 mosfet is specified in the schematic though a 2N7000 or similar device could be used.
		Since the mosfet is an enhancement mode device, the biasing required is not quite as simple as that used for jfet circuits.
		The Mosfet Booster has a 10M input impedance that will not load down any guitar that is plugged into it, and the moderately low output Z is capable of driving almost any circuit that follows.
	www.muzique.com /schem/mosfet.htm (1159 words)

	MOSFET
		The term can be applied either to transistors in an IC or to discrete transistors.
		The major advantage of a MOSFET is low power due to its insulation from source and drain.
		MOSFETs are of both P-channel and N-channel types.
	encyclobeamia.solarbotics.net /articles/mosfet.html (119 words)

	[No title]
		A MOSFET in Saturation or as a Triode.
		The Drain-Source voltage Vds is such that the MOSFET is in saturation.
		This is similar to pn junction diode where the minority carrier electrons of the p-side are swept to the n-side by the built-in field whenever they reach the depletion boundary.
	jas.eng.buffalo.edu /education/mos/mosfet/mosfet.html (1508 words)

	Industrial Control Designline \|Designing with ultra-low voltage MOSFET arrays
		A zero threshold MOSFET reduces or eliminates input to output voltage level shift in circuits where the signal is referenced to GND or V+.
		Since these EPAD MOSFETs exhibit high drain current versus drain voltage characteristics resembling that of a diode turn-on characteristic, a diode clamping circuit with tightly controlled operating characteristics can be easily built by connecting the drain and the gate terminals, as shown in Figure 4.
		An EPAD MOSFET acts as a switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals (See Figure 8).
	www.industrialcontroldesignline.com /howto/170700359 (5920 words)

	MOSFET Device Modeling Using Methods of Asymptotic Analysis
		The first silicon based MOSFET devices were fabricated in 1960, and since then they have replaced the vacuum tube in almost all-electronic applications.
		One of the deficiencies of many MOSFET models is that they are regional and can have discontinuities at the boundaries between regimes.
		In [1], the asymptotic analysis presented in [3] was improved to achieve explicit I-V formula in various regimes, and the formulae successfully "blended" across regime boundaries.
	www.isi.edu /~abebeh/electronics/MOSFET.htm (1594 words)

	4QD-TEC: PWM speed control
		As the pot on the input is altered the average voltage on the 22n alters and this alters the mark-space ratio (the duty cycle) of the oscillator.
		But the MOSFET gate has voltage present and if there were no diode in series with the zener the zener would be forward biased, shorting the gate to the positive rail (now at zero voltage because of the collapsed supply).
		Now, when the loside MOSFET is turned on, the bottom on this zener is connected to the negative supply rail so there would be a direct current path from +24, through both diodes and the zener.
	www.4qdtec.com /pwm-01.html (4704 words)

	MOSFET
		MOSFETs, Metal Oxide Semiconductor Field Effect Transistor are also known as IGFETs Insulated Gate Field Effect Transistor.
		A MOSFET does not require the large input current of a bipolar transistor.
		The main distinction is that in a MOSFET the gate voltage is applied across the metal oxide insulater rather than across the P-N junction.
	www.clivetec.0catch.com /MOSFETs.htm (153 words)

	Project 101 - High Power, High Fidelity MOSFET power amplifier
		The specified MOSFETs have a rated Vds (saturated voltage, Drain to Source) of 12V at full current, and that is simply subtracted from the DC value of the supply voltage.
		PCB pins are used as anchor points for the power ground link (the green wire along the front edge), so that the main current carrying tracks were not compromised by running a separate track (which would have required a reduction in size of the positive supply rail).
		Naturally, dual MOSFET pairs may be used at this voltage as well, providing much better thermal performance (and therefore cooler operation), far greater peak current capability and slightly higher power.
	sound.westhost.com /project101.htm (2797 words)

	EETimes.com - Non-Classical CMOS: the "Ultimate" MOSFET Device
		As MOSFET scaling continues, in 2007 the transistor gate length (Lg) is expected to be around 25 nm, compared to 45 nm for today's leading-edge transistors.
		The double-gate MOSFET has superior scalability (i.e., superior control of short-channel effects) for very small MOSFETs, due to the electrical shielding action of the bottom gate for electric fields originating from charges in the source and drain.
		When the MOSFET is turned on, the current flow is from source to drain, along both the left and right vertical edges of the fin.
	www.eet.com /in_focus/silicon_engineering/OEG20030822S0030 (1435 words)

	Power MOSFET Thermal Runaway
		With the resistance increase, the power dissipated for a constant on-current increases, the junction temperature increases, and the resistance further increases until the device is in thermal equilibrium with the heat removal system.
		One of the applets demonstrates Thermal Runaway of a MOSFET.
		The author derives the steady state and transient thermal models of a power MOSFET, the mechanisms for power losses, the determination of total power losses and junction temperature, and the implications for thermal design and safe operating area.
	www.smpstech.com /tmos0000.htm (509 words)

	Testing a MosFet, Testing (Site not responding. Last check: 2007-09-10)
		Do NOT allow a MOSFET to come in contact with your clothes, plastic or plastic products, etc. because of the high static voltages it can generate.
		The MosFet's internal capacitance on the gate has now been charged up by the meter and the device is 'turned-on'.
		That can be an important feature when the device is used to turn on incandescent lamps, because the lamp's cold resistance is much lower than the normal operating resistance.
	www.uoguelph.ca /~antoon/gadgets/mostest.htm (1080 words)

	MOSFET Driver Is Reverse-Battery Protected - Maxim/Dallas
		MOSFET power-switch drivers must be protected from a reverse-battery connection.
		A small rectifier diode can protect against reversed batteries, but that approach is generally unacceptable for systems in which battery life is crucial.
		Thus, substituting a MOSFET for the diode provides an immediate improvement in efficiency.
	www.maxim-ic.com /appnotes.cfm/appnote_number/2012 (422 words)

	Project 83 - MOSFET Power Follower
		From my point of view a power MOSFET follower is a still better solution.
		The sound impression is perfect, surpassing the common Source MOSFET circuit.
		As Ube is reduced by -2mV/°C, zener voltage also goes down with increasing temperature inside a box (but the zener is not on the heat sink of the MOSFET and should not be).
	sound.westhost.com /project83.htm (1320 words)

	Paradigm Shift in Planar Power MOSFET Technology (Site not responding. Last check: 2007-09-10)
		In a typical 12-V power supply delivering power at an output voltage of 1.2 V, the duty cycle is 10% — with the control FET on for 10% of the time and the Sync FET on for 90% of the time during each period.
		It has been suggested that the Schottky diode be co-packaged with the sync FET to overcome this problem, but the space occupied by the diode prevents the minimization of the on-resistance of the sync FET — leading to poor efficiency.
		The transfer of current between the MOSFET and the Schottky diode is impeded by the presence of the stray inductance in the packages and the circuit board.
	powerelectronics.com /mag/power_paradigm_shift_planar/index.html (2316 words)

	MOSFET suits synchronous rectification applications., International Rectifier Corp.
		With on-resistance of 3.8 mΩ and 7-pin leadframe that allows large-diameter wire bonding, MOSFET is suited for server switch mode power supply rectification with 12 V output, active ORing for telecom 48 V rails, and 24 V input dc-dc converters.
		Aug 8, 2006 - MOSFET Chipset is suited for DC-DC buck converters.
		Oct 6, 2006 - MOSFETs are desiged for ballast applications.
	news.thomasnet.com /fullstory/467686 (860 words)

	ampli MOSFET
		The power transistors must be assembled on a heatsink with a thermal resistance less than 1 ° C/W. They must also be electrically insulated from the heatsink by using a mica insulator + heat-conducting compound or a silicone insulator.
		It is possible to use the MOSFET output stage PCB which is also reproduced on the site, but take care with the thermal dissipation of the output transistors (this circuit is perfect for power of 100 Wrms under 8 ohms or 155 Wrms under 4 ohms).
		It is possible to use two PCBs in parallel to double the number of output transistors, do not place the limitation diodes, the fuses and the RC output circuit on the second PCB.
	users.swing.be /edwinpaij/ampli_mosfet.htm (1482 words)

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