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Topic: Magnetoresistance

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	Magnetoresistance effect head in which a magnetoresistance effect element and a soft magnetic film form a single ... (Site not responding. Last check: 2007-10-31)
		The magnetoresistance effect elements used in the present invention may be of a type using an anisotropic magnetoresistance effect or of a type using a magnetoresistance effect caused by spin-dependent scattering.
		The soft magnetic film 12 and the magnetoresistance effect elements 13 are substantially U-shaped, as a whole, thereby forming a magnetic circuit, and the gap between the two magnetoresistance effect elements 13 serves as a magnetic gap in the side of the surface facing the medium.
		The gap between the magnetoresistance effect elements 13 in the side of the air bearing surface serves as a magnetic gap, and an insulating member (made of, e.g., alumina) is embedded in the portion of the magnetic gap.
	www.freepatentsonline.com /5894384.html (5290 words)

	Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions - Patent 5329413
		The sensor is characterized in that the magnetoresistance layer and the magnetization stabilizing layer are stacked on each other such that the layers are magnetically coupled to each other at their two end regions with an exchange coupling force higher than that at the remaining region.
		In the magnetoresistance sensor having the above-described arrangement, the antiferromagnetic film 82 serving as a magnetization stabilizing film is formed on the side of the low-coercive-force film 84 as the active region of the non-exchange coupled type MR layer.
		In the magnetoresistance sensor having the above arrangement, the antiferromagnetic film 82 as a magnetization stabilizing film is formed on the side of the low-coercive-force film 84 as the active region of the spin valve type MR layer partially through the magnetic insulating layer 83.
	www.freepatentsonline.com /5329413.html (5837 words)

	Magnetotransport in doped manganate perovskites
		The recent interest in magnetoresistance in doped perovskite manganates was initiated by the discovery of a large room-temperature magnetoresistance in epitaxial thin films [3].
		All reports of large magnetoresistances involve the preparation of the materials in such a way as to suppress its resistance-peak temperature to below 150 K. The saturation magnetic field necessary to achieve a full CMR effect in the generic materials is large, usually of the order of several tesla, as illustrated in Figure 1.
		The high-frequency response of their magnetoresistance would have to be determined, and associated fabrication processes compatible with the microelectronics technology would have to be developed before the applicability of this class of materials to magnetic sensing applications could be assessed.
	www.research.ibm.com /journal/rd/421/sun.html (4882 words)

	Magnetoresistance effect element patent invention (Site not responding. Last check: 2007-10-31)
		The magnetoresistance effect element comprises: a magnetoresistance film including a free layer; and shielding sections being respectively provided on the both sides of the free layer in a direction of track width, the shielding sections being soft magnetic films.
		After the magnetoresistance effect film is formed, the hard bias films 16a and 16b are respectively forming on both side slope faces of the magnetoresistance effect film.
		In the magnetoresistance effect element, the magnetoresistance effect element may be a CIP type element, in which a sensing current runs in parallel to a film plane of the magnetoresistance film.
	www.freshpatents.com /Magnetoresistance-effect-element-dt20051208ptan20050270702.php (1234 words)

	Magnetoresistance effect film and magnetoresistance effect head patent invention (Site not responding. Last check: 2007-10-31)
		The magnetoresistance effect film has a magnetic oxide layer for fixing a magnetizing direction of a pinned magnetic layer and a greater MR ratio.
		The value Hc(pin) influences long term reliability of the magnetoresistance effect film, so the MR ratio must be increased with maintaining the value Hc(pin) great so as to highly increase the magnetic recording density.
		[0015] In the present invention, the MR ratio of the the magnetoresistance effect film can be greater than that of the conventional film disclosed in the document (2), in which a cobalt oxide is used as the seed layer.
	www.freshpatents.com /Magnetoresistance-effect-film-and-magnetoresistance-effect-head-dt20051208ptan20050270704.php (1001 words)

	Colossal Magnetoresistance ....
		Magnetoresistance is the relative change in electrical resistance of a material on the application of magnetic field.
		The magnetoresistance of conventional materials is quite small; but materials with large magnetoresistance have been synthesized now.
		Magnetoresistance has aroused great interest recently because of possible application in devices such as read/write heads in computer discs and in sensors.
	folk.uio.no /ravi/activity/ordering/colossal-magnet.html (247 words)

	Magnetoresistance
		We interpret the data as exhibiting Tunneling Anisotropic Magnetoresistance (TAMR), given that both normal and inverted spin valve behavior is present depending on the direction of the applied field.
		The anisotropic magnetoresistance (AMR) measurements plotted above have x as the direction parallel to the bar, y is perpendicular to the strip, and z is out of the plane of the stripe.
		The second plot (above) shows that the magnetoresistance measurement is different for the three directions of the applied field.
	faculty.physics.tamu.edu /sinova/magneto.htm (746 words)

	Magnetics and Magnetoresistance in Epitaxial Magnetite Heterostructures Journal of Electronic Materials - Find Articles (Site not responding. Last check: 2007-10-31)
		Magnetoresistance and its temperature dependence are characteristic of a single magnetic layer.
		Until recently, a few groups have observed junction magnetoresistance on the order of 1% or less across magnetic tunnel junctions with magnetite electrodes.4,5 These studies have incorporated MgO as the tunneling barrier.
		The CCO is a paramagnetic insulator at room temperature with a T^sub c^ of 95 K in the bulk.
	www.findarticles.com /p/articles/mi_qa3776/is_200411/ai_n9462784 (772 words)

	Physics News Update
		Ballistic magnetoresistance (BMR) is yet another way in which spin orientation, encoding information on a storage medium such as a hard drive, can modify electrical resistance in a nearby circuit, thereby accomplishing the sensing of that orientation.
		In ballistic magnetoresistance, the sensor size is reduced to just a cluster of ferromagnetic atoms, joined together by, say, two lead wires.
		In the Buffalo experiment a remarkably large magnetoresistance effect (change in resistance) of 3150% is observed at room temperature (compared to 100% for GMR, and 1300% for EMR, or 1300% for room temperature "colossal magnetoresistance," or CMR).
	www.aip.org /enews/physnews/2002/split/595-1.html (302 words)

	Giant Magnetoresistance (Site not responding. Last check: 2007-10-31)
		Giant magnetoresistance has been the subject of a huge international research effort due to the numerous technological applications.
		The largest is in the data storage industry and IBM were first to market with hard disks based on GMR technology although today all disk drives make use of this technology.
		However in most cases they are inappropriate for senor applications, as the fields required to observe the magnetoresistance are very large.
	www.stoner.leeds.ac.uk /research/gmr.htm (1327 words)

	Giant Magnetoresistance
		The GMR effect is a large decrease in electrical resistivity that occurs when the magnetization of two layered samples is aligned by an external magnetic field.
		The discovery of “giant” magnetoresistance (GMR) in 1988 gave scientists the ability to detect and understand the two different kinds of electrons in a metal, opening the possibility of exciting new technological applications (see Applications of Giant Magnetoresistance).
		Magnetoresistance is a change in the electrical resistivity of a material that is caused by application of a magnetic field.
	www.ornl.gov /info/ornlreview/v30n3-4/giant.htm (4134 words)

	current research: colossal magnetoresistance (Site not responding. Last check: 2007-10-31)
		Magnetoresistance is the phenomenon of a material changing its electrical resistivity when it is placed in a magnetic field.
		This phenomenon has aroused great interest recently because of the possibility of making use of it in devices such as read/write heads in computer disc-drives.
		The magnetoresistance of traditional materials is quite small: the passage of current is not greatly affected by external magnetic fields.
	www.pa.msu.edu /people/billinge/grp/conf.html (515 words)

	Colossal magnetoresistance - Wikipedia, the free encyclopedia
		Colossal magnetoresistance (CMR) is a property of some materials, mostly manganese-based perovskite oxides, that enables them to dramatically change their electrical resistance in the presence of a magnetic field.
		The magnetoresistance of conventional materials enables changes in resistance of up to 5%, but materials featuring CMR may demonstrate resistance changes by orders of magnitude.
		Initially discovered in 1993, this property is not explained by any current physical theories, including conventional magnetoresistance or the double-exchange mechanism.
	en.wikipedia.org /wiki/Colossal_magnetoresistance (151 words)

	Mystery of Colossal Magnetoresistance
		EVEN AT In 1988, thinly layered materials were found that increased or decreased their resistivity by 20 percent or more in relatively weak magnetic fields -- hence "giant" magnetoresistance, or GMR.
		Then in 1993, materials were found that could increase or decrease resistance not by a few percent but by orders of magnitude.
		CMR is found in materials with the crystalline structure called perovskite, whose atoms are arranged in discrete layers of differing composition.
	www.lbl.gov /Science-Articles/Archive/colossal-magnetoresistance.html (1083 words)

	Amazon.com: Nanoscale Phase Separation and Colossal Magnetoresistance: Books: Elbio Dagotto (Site not responding. Last check: 2007-10-31)
		The text argues that nanostructures are at the heart of the CMR phenomenon.
		Beginning graduate students or postdocs will also benefit from the introductory material of the early chapters, and the book can be used as a reference for an advanced graduate course.
		Addresses nanoscale phase separation, focusing on the manganese oxides known as manganites that show the colossal magnetoresistance (CMR) effect which has potential relevance for device applications.
	www.amazon.com /Nanoscale-Phase-Separation-Colossal-Magnetoresistance/dp/3540432450 (926 words)

	Physics of the Giant Magnetoresistance
		The giant magnetoresistance (GMR) effect was discovered in France in 1988, but it has been widely investigated by US investigators.[Baibich, 1988] As illustrated in
		Figure 1, GMR is a very large change in electrical resistance that is observed in a ferromagnet/paramagnet multilayer structure when the relative orientations of the magnetic moments in alternate ferromagnetic layers change as a function of applied field.
		Successful development of an imaging detector for site remediation will provide useful baseline information for design of a battlefield-deployable land or shoreline mine imaging system.
	www.wsrcc.com /alison/uxopaper/gmr.html (413 words)

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