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Topic: N type semiconductor

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	Semiconductor Primer, semiconductors 101
		In the N type material this electron flow constitutes a current flowing from the cold side to the hot side and the the movement of the electrons causes a negative charge to build up at the cold side with a corresponding positive charge on the hot side due to the deficit of electrons there.
		In the P type material the migration of the holes constitutes a current flowing in the opposite direction and a positive charge to be built up at the cold side and a corresponding negative charge at the hot side.
		Thus electrons in the N type material migrate towards the positive terminal causing a surplus to accumulate in the region of the semiconductor next to the terminal leaving a deficit at the negative side of the device.
	www.mpoweruk.com /semiconductors.htm (8253 words)

	transistor - Encyclopedia.com
		The transistor is an arrangement of semiconductor materials that share common physical boundaries.
		The p-n-p junction transistor, consisting of a thin layer of n -type semiconductor lying between two p -type semiconductors, works in the same manner, except that all polarities are reversed.
		The metal-oxide semiconductor field-effect transistor (MOSFET) is a variant in which a single gate is separated from the channel by a layer of metal oxide, which acts as an insulator, or dielectric.
	www.encyclopedia.com /doc/1E1-transist.html (1342 words)

	SEMICONDUCTOR - Definition
		[n] a substance as germanium or silicon whose electrical conductivity is intermediate between that of a metal and an insulator; its conductivity increases with temperature and in the presence of impurities
		Where n and p type regions adjoin, a junction is formed which will pass current in one direction (from p to n) but not the other, giving a diode.
		One model of semiconductor behaviour describes the doping elements as having either free electrons or holes dangling at the points in the crystal lattice where the doping elements replace one of the atoms of the foundation material.
	www.hyperdictionary.com /dictionary/semiconductor (291 words)

	Bilayer electrode on a n-type semiconductor - Patent 5677572
		An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed.
		The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the materials and the thickness of the non-conducting layer being selected so that the bilayer forms a low-resistance contact to the semiconductor, the bilayer providing stability against atmospheric corrosion.
		The bilayer is composed of a thin non-conducting layer and a conductive layer.
	www.freepatentsonline.com /5677572.html (2173 words)

	semiconductor - CREA semiconductor test equipments
		Semiconductor is an appropriate name for the device because it perfectly describes the material from which it's made not quite a conductor, and not quite an insulator.
		A semiconductor in which concentration of electrons is higher than the concentration of holes is said to be an (extrinsic) n-type semiconductor.
		Donor impurities in compound semiconductors are elements with valence higher than that of the component they substitute, and acceptor impurities are elements with valence lower than that of the component they substitute.
	www.crea-test.com /semiconductor.htm (1059 words)

	Energy Conversion Devices (ECD Ovonics) is a leader in the fields of alternative energy generation and storage, and ...
		a type of data-storage media using a CD format with pre-recorded data that cannot be recorded by the user.
		This allows use of multi-elements and complex materials where positional, translational, and compositional disorder remove restrictions so that new local order environments can be generated to control the physical, the electronic, and the chemical properties of the material, thereby permitting the synthesis of new materials with new mechanisms.
		a type of very fast semiconductor memory device used for high-speed transfers of relatively small data blocks to the main processor in a computer.
	www.ovonic.com /ecd_ovonics_glossary.cfm (752 words)

	Semiconductors
		A semiconductor is called a p-type semiconductor where conduction takes place due to freely moving ‘holes’ (positively charged) which replace electrons displaced by random electron movement in the material.
		This type of device is called a "solid state diode" or a semiconductor.
		In this type of connection, holes in the each of p-region are attracted towards the negative battery terminal and the mobile electrons in the n-region are initially moved away from both junctions in the direction of the positive battery terminal.
	www.qsl.net /vu2msy/semiconductors.htm (1127 words)

	ESD protection element - US Patent 6791123 (Site not responding. Last check: )
		And a second high impurity density n type region is formed simultaneously with the formation of the first high impurity density n type region such that it extends over the surface layer of the low impurity density n type layer and a surface layer of the p type region.
		type silicon substrate 11, which is a high impurity density n type semiconductor substrate, on one of main surfaces thereof and an anode electrode 13 connected to a terminal A is provided on the other main surface in electrical contact with the other main surface thereof.
		It is assumed that the junction area of the PN junction J2 is equal to that of the PN junction J1 and the n type impurity density of the n
	www.patentstorm.us /patents/6791123-description.html (3792 words)

	Spartanburg SC \| GoUpstate.com \| Spartanburg Herald-Journal
		An N-type semiconductor (N for Negative) is obtained by carrying out a process of doping, that is, by adding an impurity of valence-five elements to a valence-four semiconductor in order to increase the number of free (in this case negative) charge carriers.
		Note that each movable electron within the semiconductor is never far from an immobile positive dopant ion, and the N-doped material normally has a net electric charge of zero.
		In an N-type semiconductor, the fermi level lies closer to the conduction band edge.
	www.goupstate.com /apps/pbcs.dll/section?category=NEWS&template=wiki&text=N-type_semiconductor (329 words)

	Photovoltaics (Site not responding. Last check: )
		For semiconductors this tends to be fairly lowóoften corresponding to light in the visible region of the EM spectrum.
		Photovoltaics is made possible by constructing a cell consisting of two types of hybrid semiconductors: a p and n type semiconductor.
		The overall result is two hybrid semiconductors: one with a surplus of electrons and one with a surplus of holes.
	www.uvm.edu /~swgordon/231-02/finprojects/jerry/Photovoltaics.htm (1518 words)

	U.S. Patent: 6265758 - Semiconductor active electrostatic device - July 24, 2001
		A semiconductor electrostatic device according to claim 17; further comprising means for positioning a workpiece having a given conductivity type in an opposed relationship from the active means, and means for detecting an interactive electrostatic force induced between the workpiece and the active means so as to detect the conductivity type of the workpiece.
		A semiconductor electrostatic device according to claim 32; wherein the active means is relatively movable with respect to the field generating means; and the active means and the field generating means comprise a pair of movable and stationary members operative to convert the output electrostatic force into a mechanical displacement of the movable member.
		A semiconductor electrostatic device according to claim 65; further comprising means for positioning a workpiece having a given conductivity type in an opposed relationship from the active means, and means for detecting an interactive force induced between the workpiece and the active means to detect the conductivity type of the workpiece.
	www.everypatent.com /comp/pat6265758.html (11518 words)

	Doped Semiconductors
		The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors.
		The addition of pentavalent impurities such as antimony, arsenic or phosphorous contributes free electrons, greatly increasing the conductivity of the intrinsic semiconductor.
		The application of band theory to n-type and p-type semiconductors shows that extra levels have been added by the impurities.
	hyperphysics.phy-astr.gsu.edu /hbase/solids/dope.html (189 words)

	Semiconductor commutator with grain boundary (Site not responding. Last check: )
		The present invention relates to a semiconductor commutator and, more particularly, to a semiconductor commutator which is constructed by joining a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type.
		Thus, an n type silicon crystalline substrate in which the position of the grain boundary was controlled like a lattice of an interval of 100.mu.m and a phosphorus (P) concentration is set to 1.times.10.sup.16 atom/cm.sup.3 was obtained.
		The main surface on which the p type semiconductor region 3 and an n type semiconductor region 2a were flattened and the grain boundary 5 are perpendicularly formed almost in parallel with a junction surface 6.
	www.stickebana.com /scitech/broken_bolt_extractor/semiconductor_commutator_with_grain_boundary.html (2347 words)

	Current-mirror circuit with buffering transistor (Site not responding. Last check: )
		The second NMOS transistor 14 is formed by the use of the conductive layer 50 as its gate electrode, the N type layer 38 as its drain and the N type layer 40 as its source.
		A pair of P type semiconductor diffusion layers 64 and 66 and a conductive layer 72, which is disposed above the layers 64 and 66 so as to be insulated from the substrate and serves as the gate electrode, form the first PMOS transistor 52.
		In this case, the conductive layer 74 serves as the gate electrode, the P type layer 68 serves as the drain and the P type layer 70 serves as the source.
	www.stickebana.com /scitech/corner_flashing/current-mirror_circuit_with_buffering_transistor.html (3525 words)

	New n-Type Diamond Semiconductor Synthesized
		Particularly, in the area of power device and short-wavelength light emitting device, the highest performance may be expected among various types of semiconductors, and for this reason, a number of research organizations are racing for the development of diamond semiconductor devices.
		As a semiconductor, diamond is characterized by high mobility of electrons and holes, and by very small difference between mobility of the two carriers, promising a wide spectrum of applications in electron devices.
		When attempting the commercialization as semiconductors, the (001) oriented substrate is favored through mechanical polishing, fine patterning and etching of the surface, and yield of such processing, in contrast to the (111) oriented substrate which cannot be atomically flat surface owing to the top hardness among crystal surfaces of the diamond.
	www.aist.go.jp /aist_e/latest_research/2005/20050615/20050615.html (1396 words)

	[No title]
		A minority carrier is the type of carrier which there are fewer of in a particular type (P or N) of semiconductor.
		The block on the left is N type and the dots represent conduction electrons.
		Notice that the positive terminal of the battery is connected to the N type semiconductor and the negative terminal of the battery is connected to the P type semiconductor.
	www.angelfire.com /planet/funwithtransistors/Basics_03_Sc_Diodes.html (3373 words)

	Untitled Document
		Semiconductors are made by taking elements that are generally insulators, like silicon (Si) or Germanium (Ge), to which impurities are added.
		An example of N type semiconductor is silicon doped with arsenic.
		Semiconductor diodes are formed by putting P type material in contact with N type.
	www.sas.org /E-Bulletin/2003-01-24/electro/body.html (1420 words)

	Semiconductor device (Site not responding. Last check: )
		A fourth aspect of the present invention is directed to the semiconductor device according to the third aspect of the present invention, wherein an impurity concentration of the second semiconductor region is locally enriched at an end of the second semiconductor region which is close to the drain region.
		An N type semiconductor layer 32 is provided on a surface of the channel dope region 3 formed under a gate insulation film 4, that is, a region 10 where a channel is to be formed.
		Since the second gate electrode 143 is formed of the N type semiconductor, a depletion layer 143c is generated in a region of the second gate electrode 143 which is provided in contact with the second gate insulation film 142.
	www.emergenthomestore.com /techcat/electrically_conductive_polypyrrole_article/semiconductor.html (14135 words)

	Frequently Asked Questions (FAQs) KeyWords:(Thermoelectric Cooler TEC Peltier)
		As a dc current passes through one or more pairs of elements from n- to p-, there is a decrease in temperature at the junction ("cold side") resulting in the absorption of heat from the environment.
		The heat pumping capacity of a cooler is proportional to the current and the number of pairs of n- and p- type elements (or couples).
		N and P type semiconductors (usually Bismuth Telluride) are the preferred materials used to achieve the Peltier effect because they can be easily optimized for pumping heat and due to the ability to control the type of charge carrier within the conductor.
	www.marlow.com /TechnicalInfo/frequently_asked_questions_faqs.htm (1446 words)

	N-type semiconductor (Site not responding. Last check: )
		A semiconductor type in which the density of holes in the valence band is exceeded by the density of electrons in the conduction band.
		N-type behavior is induced by the addition of donor impurities, such as arsenic or phosphorus, to the crystal structure of silicon.
		In N-type semiconductors, electrons are the majority carriers, and holes are the minority carriers.
	encyclobeamia.solarbotics.net /articles/n_type.html (59 words)

	U.S. Patent: 6236122 - Load drive device - May 22, 2001
		In general, P type elements are inferior in characteristics to N type elements such as NPN transistors, N channel FETs, or N channel IGBTs in many respects such as their current amplification factor, voltage-withstanding ability, and saturation voltage, and are moreover costly.
		A first object of the present invention is therefore to constitute a high side switch of good efficiency using N type elements by means of comparatively few circuit components.
		This embodiment is an improved type of high side switch using N type elements.
	www.everypatent.com /comp/pat6236122.html (3920 words)

	Nucleovoltaic Cell
		Electrical contacts (5) connect the semiconductors to an external circuit (6) as well as to a rechargeable battery or energizer (7), in series with two large ohm resistors (8,81), which provide a forward - biased voltage across the NP junction greater than the contact potential set up in the reverse direction (P to N).
		A diffusion of electrons from N to P across the junction begins, but resistor (8) is designed to limit the rate of discharge of the battery (7).
		It is proposed here that the nuclear energy released will excite electrons in the semiconductor from the valence band into the conduction band, at a worthwhile efficiency, thus generating an excess electrical potential.
	www.padrak.com /ine/NEN_6_9_5.html (555 words)

	Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of ...
		The pixel separation region 1023 is formed of, for example, a p type semiconductor region from the surface of the substrate to the back surface of the substrate.
		The n type semiconductor region 1022b extended to the back surface side of this substrate is formed so as to be extended under a p type semiconductor well region 1024 corresponding to a so-called read circuit region in which each MOS transistor is formed.
		To improve sensitivity and shading characteristics, there is developed a so-called back-illuminated type CMOS image sensor having a structure to introduced light from the back surface of the opposite side of the surface in which a read circuit for reading a signal from a photo-electric conversion element is formed.
	www.freshpatents.com /Solid-state-image-pickup-device-electronic-apparatus-using-such-solid-state-image-pickup-device-and-method-of-manufacturing-solid-state-image-pickup-device-dt20060907ptan20060197007.php (1320 words)

	transistor. The Columbia Encyclopedia, Sixth Edition. 2001-05
		It is the solid-state analog to the triode electron tube; the transistor has replaced the electron tube for virtually all common applications.
		The n-p-n junction transistor consists of two n-type semiconductors (called the emitter and collector) separated by a thin layer of p-type semiconductor (called the base).
		The p-n-p junction transistor, consisting of a thin layer of n-type semiconductor lying between two p-type semiconductors, works in the same manner, except that all polarities are reversed.
	www.bartleby.com /65/tr/transist.html (586 words)

	Semiconductor Manufacturing Equipment - Used, Refurbished and Surplus Equipment
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	wwx.com /dp/cat/2/11/mAllItems.cfm?menuid=m_16 (125 words)

	Physics Today September 2000
		The first part of Holger Grahn's Introduction to Semiconductor Physics is based on a course of that name Grahn gave in the department of Physical Electronics at Tokyo Institute of Technology during the 19951996 academic year.
		Its introduction describes what a semiconductor is and presents a classification scheme; Chapters 2 and 3 treat the subjects of crystal structure, reciprocal lattice, and electrons in a periodic potential.
		However, the title of this book--Introduction to Semiconductor Physics--may be somewhat misleading; perhaps it should have been entitled "Selected Topics in Semiconductor Physics." Topics such as alloying, strain, doping effects, and heterojunctions are not discussed.
	www.aip.org /pt/vol-53/iss-9/p66.html (608 words)

	Heterogeneous photocatalytic reduction of dichromate on n-type semiconductor catalysts
		Heterogeneous photocatalytic reduction of dichromate on n-type semiconductor catalysts
		The fixing of carbon dioxide on semiconductor powders
		Here we report the photocatalytic reduction of dichromate to Cr(III) on n-type semiconducting powders.
	www.nature.com /nature/journal/v282/n5741/abs/282817a0.html (188 words)

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