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Topic: N-type semiconductor

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Semiconductor - Wikipedia, the free encyclopedia Semiconductors with predictable, reliable electronic properties are difficult to mass-produce because of the required chemical purity, and the perfection of the crystal structure, which are needed to make devices. It is well-known from solid-state physics that electrical conduction in solids occurs only via electrons in partially-filled bands, so conduction in pure semiconductors occurs only when electrons have been excited--thermally, optically, etc.--into higher unfilled bands. A semiconductor is a material that is an insulator at very low temperature, but which has a sizable electrical conductivity at room temperature. en.wikipedia.org /wiki/Semiconductor

United States Patent Application: 0030062534 The semiconductor light emitting element according to claim 1, wherein said P type electrode is formed of a single layer or a multilayer selected from the group consisting of Pd (palladium), Ni (nickel), Pt (platinum), Au (gold), and Ag (silver), or an alloy thereof. The light emitting element is based on a structure in which light is not blocked by the other electrode in a chip that has a conductive substrate, and the reflectance of the p type electrode is set to 100% so that light from the side plane of the chip can be used more effectively. Although light will not be emitted from the top plane of the chip when the reflectance of the p type electrode is set to 100%, the light output from the side plane is increased by forming the chip thicker. appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20030047741.PGNR.&OS=DN/20030047741&RS=DN/20030047741

United States Patent Application: 0030047741 The p type electrode 7 is fabricated by stacking a Pd layer having the thickness of 20 nm and an Au layer having the thickness of 1000 nm thereon, on the surfaces of non-conductive substrate 1 and p type nitride semiconductor layer 2. The n type pad electrode 6 is formed by stacking a Hf (hafnium) layer having the thickness of 10 nm and an Al (aluminum) layer having the thickness of 1000 nm thereon, approximately at the center on the surface of n type nitride semiconductor layer 4. The n type pad electrode 6 is formed by stacking a Hf layer having the thickness of 20 nm and further an Au layer having the thickness of 1000 nm thereon, at opposing ends on the surface of n type nitride semiconductor layer 4. appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=/netahtml/PTO/search-adv.html&r=1&f=G&l=50&d=PG01&p=1&S1=20030047741.PGNR.&OS=DN/20030047741&RS=DN/20030047741   (6133 words)

rpaper An important result of statistical mechanics is that "two systems that can exchange energy and particles are in equilibrium when the temperatures and the chemical potentials are equal." Figure 7, by redrawing Figure 2, shows the Fermi levels positions in the n- and p-type semiconductors. Semiconductor devices, transistors, solar cells, and electronic components should also be designed to consume little power and be very small. Semiconductors have an energy gap, forbidden bands, while semimetals and metals have no such gap. lennon.pub.csufresno.edu /~lu001/rpaper.htm   (6133 words)

p-type semiconductor is: a semiconductor in which the majority of mobile charge carriers are positively charged (usually holes). www.pha.jhu.edu /~ggaspar/physics/glossary/glossary/pp/ptypsemi.htm   (6133 words)

p-type semiconductor – the semiconductor in which the density of mobile holes exceeds that the conduction electrons p-type semiconductor – the semiconductor in which the density of mobile holes exceeds that the conduction electrons. p-type semiconductor – the semiconductor in which the density of mobile holes exceeds that the conduction electrons www.yphysics.freenet.kz /Words%20P/p-type%20semiconductor.htm   (6133 words)

P-type semiconductor - Wikipedia, the free encyclopedia This type of doping agent is also known as acceptor material and the semiconductor atoms that have lost an electron are known as holes. A P-type semiconductor is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case positive) charge carriers. Blue diamonds (Type IIb), which contain boron (B) impurities, are an example of a naturally occurring P-type semiconductor. en.wikipedia.org /wiki/P-type_semiconductor   (319 words)

SEMICONDUCTOR - Definition Semiconductors are used to make diodes, transistors and other basic "solid state" electronic components. Where n and p type regions adjoin, a junction is formed which will pass current in one direction (from p to n) but not the other, giving a diode. As crystals of these materials are grown, they are "doped" with traces of other elements called donors or acceptors to make regions which are n- or p-type respectively for the electron model or p- or n-type under the hole model. www.hyperdictionary.com /dictionary/semiconductor   (319 words)

Physics A04 - Electronics The same principle is used in semiconductor lasers where the p-n type regions are very heavily doped and the barrier width is very narrow. Many semiconductor devices depend on effects which occur at the boundary (junction) between p- and n-type materials. This ‘extra’ electron can be readily excited thermally to the conduction band where it will increases the conductivity of the semiconductor. www.anu.edu.au /Physics/courses/A04/a04EL/a04el8.html   (319 words)

N-type semiconductor - Wikipedia, the free encyclopedia An N-type semiconductor is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case negative) charge carriers. Note that each movable electron within the semiconductor is never far from an immobile positive dopant ion, and the N-doped material normally has a net electric charge of zero. This type of doping agent is also known as donor material since it gives away some of its electrons. en.wikipedia.org /wiki/N-type_semiconductor   (319 words)

Doped Semiconductors The addition of a small percentage of foreign atoms in the regular crystal lattice of silicon or germanium produces dramatic changes in their electrical properties, producing n-type and p-type semiconductors. The application of band theory to n-type and p-type semiconductors shows that extra levels have been added by the impurities. Impurity atoms with 3 valence electrons produce p-type semiconductors by producing a "hole" or electron deficiency. hyperphysics.phy-astr.gsu.edu /hbase/solids/dope.html   (189 words)

United States Patent Application: 0040094803 Formed in the semiconductor layer 16 inside the hollow portion of the partial isolator 45 is a P.sup.+ type semiconductor layer 27 that is in contact with the insulator 9 while being exposed on the side where partial isolator 45 is positioned. An N type semiconductor layer 17 is selectively formed inside the hollow portion of the partial isolator 45 and forms a pn junction J4 with the semiconductor layer 16. In the case that the semiconductor layers 10 and 20 form the pn junction J44, however, the pn junction J44 is distant from the active regions 31a and 31b at a position A with respect to the boundaries M1a and M1b. appft1.uspto.gov /netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=/netahtml/PTO/srchnum.html&r=1&f=G&l=50&s1="20040094803".PGNR.&OS=DN/20040094803&RS=DN/20040094803   (11120 words)

Semiconductor photoelectric conversion device - Patent 4451838 A semiconductor photoelectric conversion device according to claim 4, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second and third semiconductor layers is an amorphous or semi-amorphous silicon nitride, oxide or carbide. A semiconductor photoelectric conversion device according to claim 1, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second semiconductor layer is an amorphous or semi-amorphous silicon nitride, oxide or carbide. A semiconductor photoelectric conversion device according to claim 8, wherein the amorphous or semi-amorphous semiconductor of the first semiconductor layer is amorphous or semi-amorphous silicon, and wherein the amorphous or semi-amorphous semiconductor of the second semiconductor layer is an amorphous or semi-amorphous silicon nitride, oxide or carbide. www.freepatentsonline.com /4451838.html   (4072 words)

Diode There are two kinds of semiconductor diodes: a P-N junction diode, which forms an electrical barrier at the interface between N- and P-type semiconductor layers, and a Schottky diode, whose barrier is formed between metal and semiconductor regions. Semiconductors are crystals that, in their pure state, are resistive (that is, their electrical properties lie between those of conductors and insulators) -- but when the proper impurities are added (this process is called doping) in trace amounts (often measured in parts per billion), display interesting and useful properties. A two-terminal semiconductor (rectifying) device that exhibits a nonlinear current-voltage characteristic. encyclobeamia.solarbotics.net /articles/diode.html   (1062 words)

Semiconductorjobs.com Here is a,list of companies that are currently benefiting from being promoted on the Semiconductor Jobs Blog. Please visit them often in order to keep up to date with their business as well as what new openings they have www.semiconductorjobs.com   (1062 words)

Semiconductor device Depending on the selection of impurities (often called dopants) added, semiconductor material of two electrically-different types can be created -- one that is electron -rich (called N-type, where N stands for N egative), or one that is electron -poor (called P-type, where P stands for P ositive). An electronic device whose essential characteristics are governed by the flow of charge carrier s within a semiconductor. This device (patented by a German scientist, Ferdinand Braun, in 1899) was made of a single metal wire (fondly called a "cat's whisker") touching against a semiconductor crystal. encyclobeamia.solarbotics.net /articles/semiconductor_dev.html   (1062 words)

P-type semiconductor A P-type semiconductor is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case positive) charges. This type of doping agent is also known as acceptor material and the semiconductor atoms that have lost an electron are known as holes. When the doping material is added, it takes away (accepts) weakly-bound outer electrons from the semiconductor atoms. www.mcfly.org /wik/P-type_semiconductor   (1062 words)

p-n Junction The diode is the simplest type of semiconductor device. In order to properly treat the situation we would need to consider the complete inverse problem for the semiconductor device, it is a five non-linear second order differential equation system. are the concentrations deep inside the n and p type regions. www.mtmi.vu.lt /pfk/funkc_dariniai/diod   (1062 words)

Semiconductor Materials, Junctions, and Devices Semiconductor devices are small but versatile units that can perform an amazing variety of control functions in electronic equipment. Semiconductor materials lie in the range between these two extremes, as shown in Fig. Although all the valence electrons of the impurity atom form electron–pair bonds with electrons of neighboring semiconductor atoms, one of the bonds in the lattice structure cannot be completed because the impurity atom lacks the final valence electron. www.luminet.net /~wenonah/riddick/semicond.htm   (1062 words)

World Intellectual Property Organization Brief Description of the Invention There is disclosed herein a method for the manufacture of a P-I-N type semiconductor device which is comprised of a body of substantially intrinsic semiconductor material disposed between a body of P type semiconductor material and a body of N type semiconductor material. In the context of this disclosure, the layer 12 is referred to as being substantially intrinsic since, while it is of essentially intrinsic conductivity type, it may be slightly P type or slightly N type and still function as an intrinsic layer within the context of the P-I-N type photovoltaic device. In a particularly preferred embodiment of the invention, the layer of P doped semiconductor material 14 is a microcrystalline layer manifesting high electrical conductivity and high optical transparency. www.wipo.int /ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=01/88999.011122&ELEMENT_SET=DECL   (4120 words)

Untitled Document Semiconductor diodes are formed by putting P type material in contact with N type. An example of N type semiconductor is silicon doped with arsenic. Semiconductors are made by taking elements that are generally insulators, like silicon (Si) or Germanium (Ge), to which impurities are added. www.sas.org /E-Bulletin/2003-01-24/electro/body.html   (1420 words)

Thermoelectrics 12 Most Frequently Asked Questions In the world of thermoelectric technology, semiconductors (usually Bismuth Telluride) are the material of choice for producing the Peltier effect—in part because they can be more easily optimized for pumping heat, but also because designers can control the type of charge carrier employed within the conductor (the importance of this will be explained later). By arranging N and P-type pellets in a 'couple' and forming a junction between them with a plated copper tab, it is possible to configure a series circuit which can keep all of the heat moving in the same direction. It is through the use of both N and P type materials in a single power generation device, that we can truly optimize the Seebeck effect. www.tellurex.com /12most.html   (4437 words)

Re: Are solar panels based upon the principles of Einstein photoelectric effect PV (photovoltaic) cells are semiconductors, or more properly semiconductor devices made of n-type and p-type semiconductors joined together. Within a semiconductor there is a valence band of electrons which are not free to move and a conduction band of electrons which are free to move around like the electrons in a metal. Semiconductors can be classified by the lowest energy difference between the valence band and the conduction band. www.madsci.org /posts/archives/feb2000/950540902.Ph.r.html   (657 words)

Transistors As in the diode, as electric field is established in a certain direction in the vicinity of the junctions between the two types of semiconductors. A transistor is simply a triode - either an n type semiconductor sandwiched between two p type semiconductors, as in the figure below, or a p type semiconductor sandwiched between two n type semiconductors. Switches: A transistor can also be used as a switch: a certain type of signal into the base will cut off the current flowing from the emitter to the collector. theoryx5.uwinnipeg.ca /mod_tech/node173.html   (235 words)

Photovoltaics Photovoltaics is made possible by constructing a cell consisting of two types of hybrid semiconductors: a p and n type semiconductor. For semiconductors this tends to be fairly lowóoften corresponding to light in the visible region of the EM spectrum. The overall result is two hybrid semiconductors: one with a surplus of electrons and one with a surplus of holes. www.uvm.edu /~swgordon/231-02/finprojects/jerry/Photovoltaics.htm   (1518 words)

Frequently Asked Questions (FAQs) KeyWords:(Thermoelectric Cooler TEC Peltier) N and P type semiconductors (usually Bismuth Telluride) are the preferred materials used to achieve the Peltier effect because they can be easily optimized for pumping heat and due to the ability to control the type of charge carrier within the conductor. Figure 2 illustrates an "N-type" semiconductor element utilized to facilitate the Peltier effect. The heat pumping capacity of a cooler is proportional to the current and the number of pairs of n- and p- type elements (or couples). www.marlow.com /TechnicalInfo/frequently_asked_questions_faqs.htm   (1446 words)

United States Patent: 6,586,835 In one exemplary embodiment, very high aspect ratio holes are formed by placing the wafer in a semiconductor wafer processor including a dipolering magnetron etching reactor after which, the wafer is exposed to conditions within the dipole ring magnetron etching reactor which are sufficient to form holes which extend through the entirety of the wafer. The semiconductor chip on the first side of the silicon interposer is coupled to a metal-to-semiconductor junction. Next, the semiconductor chips on each side of the silicon interposer are coupled to one another by a number of micro-machined vias at 630. web.engr.oregonstate.edu /~flf/6586835.html   (10124 words)

Sample Chapter from Microsoft® Computer Dictionary, Fifth Edition by Microsoft Press Semiconductor material in which electrical conduction is carried by electrons, in contrast to P-type semiconductors, in which conduction is carried by holes—that is, electron "vacancies." N-type semiconductors are created by adding a dopant with an excess of electrons during the manufacturing process. A type of transistor in which a base of P-type material is sandwiched between an emitter and a collector of N-type material. A semiconductor technology in which the conduction channel in MOSFETs is formed by the movement of electrons rather than holes (electron "vacancies" created as electrons move from atom to atom). www.microsoft.com /mspress/books/sampchap/5582.asp   (8208 words)

Method of manufacturing low resistivity p-type compound semiconductor material The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention. The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. www.alert.kattare.com /patentalert/docs/000/z00042433.shtml   (8208 words)

Plastic Chips: New materials boost organic electronics: Science News Online, Aug. 30, 2003 The closer the molecules are to each other, the faster a charge can hop from one molecule to another in either type of semiconductor. Transistors—which are the switches in an integrated circuit—require two types of semiconductor materials: n-type and p-type. When the researchers replaced the rod's two end thiophenes with a perfluoroarene group (a ring of six carbons decorated with fluorines), the organic molecule behaved like an n-type semiconductor. www.sciencenews.org /20030830/fob5.asp   (8208 words)

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