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| | Silicon Carbide High Temperature Integrated Electronics and Sensors |
 | | Neudeck, D. Larkin, J. Starr, J. Powell, C. Salupo, and L. Matus, "Electrical Characterization of 3C- and 6H-SiC PN Junction Diodes Grown by CVD on Low-Tilt-Angle 6H-SiC Wafers," presented at Workshop on SiC Materials and Devices, Charlottesville, VA, 1992. |
 | | Neudeck, D. Larkin, J. Powell, L. Matus, and C. Salupo, "2000 V 6H-SiC PN Junction Diodes", in Institute of Physics Conference Series, no. 137, Silicon Carbide and Related Materials: Proceedings of the Fifth International Conference, Bristol, United Kingdom: IOP Publishing, 1994, pp. |
 | | Neudeck, D. Larkin, J. Starr, J. Powell, C. Salupo, and L. Matus, "Electrical Properties of Epitaxial 3C- and 6H-SiC p-n Junction Diodes Produced Side-by-Side on 6H-SiC Wafers," IEEE Transactions on Electron Devices, vol. |
| www.grc.nasa.gov /WWW/SiC/device.html (1097 words) |
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