
	Where results make sense

Topic: Nitride

Related Topics

Calcium

Arizona

Hydrogen peroxide

Santa Cruz, California

In the News (Wed 15 Feb 12)

EXECUTIVE POWER

Iran

ANALYSIS

Pakistan

Family compact

	An unexpected discovery could yield a full spectrum solar cell
		With a band gap of 3.4 eV, gallium nitride emits invisible ultraviolet light, but when some of the gallium is exchanged for indium, colors like violet, blue, and green are produced.
		At first glance, indium gallium nitride is not an obvious choice for solar cells.
		Two layers of indium gallium nitride, one tuned to a band gap of 1.7 eV and the other to 1.1 eV, could attain the theoretical 50 percent maximum efficiency for a two-layer multijunction cell.
	www.lbl.gov /Science-Articles/Archive/MSD-full-spectrum-solar-cell.html (1378 words)

	III-V Nitride Semiconductors for High-Performance Blue and Green LEDs
		Considerable efforts to produce and characterize the nitrides began in earnest more than 30 years ago at a number of notable research facilities, such as ATandT Bell Laboratories, IBM Thomas J. Watson Research Center, and RCA, because of the potential for producing surface acoustic wave devices, blue lasers, and LEDs.
		A second problem for growing III-V nitride films is the lack of a suitable substrate that matches the lattice constant and thermal-expansion coefficient of the GaN films.
		It appears that dislocations in III-V nitrides are not associated with electrically active defects that would act as effective nonradiative recombination centers and effectively limit the lifetime of minority carriers.
	www.tms.org /pubs/journals/JOM/9709/Steigerwald-9709.html (5464 words)

	C&EN: NEWS OF THE WEEK - BORON NITRIDE NANOTUBES FORMED
		Researchers at Northwestern University have developed a technique to prepare boron nitride nanotubes and other shaped structures and have uncovered new details of the materials' atomic structure and growth mechanisms [Phys.
		Occasional four- and eight-membered rings cause boron nitride nanotubes to bend and adopt a variety of shapes (red = boron; blue = nitrogen).
		Carbon nanotubes have been the focus of intense research interest since their discovery a decade ago because of their unique physical and electronic properties.
	pubs.acs.org /cen/topstory/7912/7912notw1.html (497 words)

	Silicon Nitride
		Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
		Stoichiometric LPCVD Nitride Price List - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
		Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN).
	www.universitywafer.com /Wafers___Services/Silicon_Nitride/silicon_nitride.html (174 words)

	Boron Nitride on ThomasNet.com
		Company Profile: ISO 9001:2000 certified distributor of boron including boron carbide & boron nitride.
		Specifications of boron nitride include 2.2 density & 200 degrees C sublimation temperature.
		Company Profile: Distributor & supplier of boron nitride, aluminum oxide, silicon carbide, aluminum nitride, boron carbide & titanium diboride.
	www.thomasnet.com /products/boron-nitride-7030406-1.html (798 words)

	MRS Internet Journal of Nitride Semiconductor Research
		The journal's staff is devoted to building the MIJ-NSR into our field's leading scientific journal by maintaining high editorial standards while exploring and utilizing the extraordinary possibilities of Internet.
		Users who register enjoy additional privileges and services, such as an e-mail newsletter and the ability to contribute to discussions and databases.
		The MRS Internet Journal of Nitride Semiconductor Research is published with the assistance of Openly Informatics, Inc.
	nsr.mij.mrs.org (219 words)

	Titanium Nitride TiN Coatings (Site not responding. Last check: )
		Titanium Nitride (TiN) is the most common PVD hard coating in use today.
		TiN has an excellent combination of performance properties, attractive appearance, and safety (meets FDA requirements for surgical tools and implants as well as food contact applications).
		Titanium Nitride is an extremely hard, thin film coating that is applied mostly to precision metal parts.
	www.brycoat.com /tin (173 words)

	Nanotechnology Breakthrough: Gallium Nitride Nanowires Grow Direction is Under Control
		A significant breakthrough in the development of the highly prized semiconductor gallium nitride as a building block for nanotechnology has been achieved by a team of scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California at Berkeley.
		In addition to Yang, co-authors of the report, "Crystallographic alignment of high-density gallium nitride nanowire arrays," were Yanfeng Zhang, Donald Sirbuly, and Jonathan Denlinger of Berkeley Lab, and Tevye Kuykendall, Peter Pauzauskie, and Joshua Goldberger of UC Berkeley.
		The crystals of both materials are geometrically compatible with gallium nitride crystals, but the lithium aluminum oxide features a two-fold symmetry that matches the symmetry along one plane of the gallium nitride crystals, whereas the magnesium oxide has a three-fold symmetry that matches gallium nitride symmetry along a different plane.
	www.physorg.com /news556.html (859 words)

	Silicon Nitride Plasma CVD
		The nitride layers are used to ensure that the trench depth is constant across a wafer, independent of variations in etch rate.
		However, the use of silicon nitride, which has a high dielectric constant and by the nature of the process is located at the corners of features (where electric field lines concentrate), leads to increased interline capacitance.
		Plasma nitride is often sandwiched with an anodic oxide or deposited silicon dioxide to obtain improved electrical insulation.
	www.timedomaincvd.com /CVD_Fundamentals/films/SiN_plasma_CVD.html (820 words)

	Nitride single crystal and producing method thereof patent invention
		It however is difficult to grow a single crystal of nitride such as AlN or Si.sub.3N.sub.4 by melting, since the nitride has a low decomposition temperature and requires a high temperature and a high pressure to increase the decomposition temperature higher than a melting temperature.
		More specifically, when the powder of the nitride crystals and the powder containing the compound of rare earth element are mixed and heated to a high temperature, a liquid-phase material transport medium layer 22 containing the rare earth element compound is formed on surfaces of nitride crystals 21A, 21B, as shown in FIG.
		1, nitride crystals 11 and powder containing a compound of rare earth element are introduced into a crucible 10 and heated to form a material transport medium layer 12 on the surfaces of nitride crystals 11.
	www.freshpatents.com /Nitride-single-crystal-and-producing-method-thereof-dt20051215ptan20050277214.php (1208 words)

	Silicon Nitride Properties
		The dense structure of silicon nitride does not provide the open channels found in oxide structures; thus, nitride is widely employed in electronics as a barrier material.
		Nitride layers are also employed as etch stop layers both for wet etching and plasma etching.
		The stoichiometry of nitride films also varies widely, especially in plasma deposition, so that refractive index can vary from about 1.8 to 2.2 and is another useful control parameter for nitride deposition.
	www.timedomaincvd.com /CVD_Fundamentals/films/SiN_properties.html (441 words)

	Nitride semiconductor laser - Patent 6891268
		The nitride semiconductor laser according to claim 1, wherein the composition on the active layer side of the stress concentration suppressing layer has a composition identical to a barrier layer of the active layer having a multiple quantum well structure.
		In the conventional nitride semiconductor laser, the band gap between the active layer 7 and the cap layer 8 is large as mentioned above, and the stress concentration is induced in the boundary between the active layer 7 and the cap layer 8.
		The nitride semiconductor laser in the present invention is characterized by having a stress concentration suppressing layer between an active layer and a cap layer.
	www.freepatentsonline.com /6891268.html (7370 words)

	Silicon Nitride (Si3N4) - An Overview (Site not responding. Last check: )
		Reaction bonded silicon nitride is made by direct nitridation of a compacted silicon powder, and because of the difficulty of ensuring complete reaction, it is hard to achieve a high component density.
		Small dense sintered silicon nitride components are used in both automobile and truck engines for applications where stresses and temperatures are relatively low and the consequence of failure is not catastrophic.
		Silicon nitride based cutting tools are now used in considerable numbers to machine cast iron by the automotive industry and nickel superalloys by the aero industries.
	www.azom.com /details.asp?ArticleID=53 (1137 words)

	Friction and Wear Behaviour of [Beta]-Silicon Nitride-Steel Couples Under Unlubricated Conditions - Science - RedOrbit
		Silicon nitride (Si^sub 3^N^sub 4^) is a promising material for structural and tribological applications owing to its excellent thermal and mechanical properties.
		Cutting tools made of silicon nitride ceramics have been used for machining cast iron, austenitic stainless steels and nickel based alloys owing to the combination of the excellent intrinsic mechanical, thermal and chemical properties.9-12 Zhao et al.9,10 reported the relationship between load, sliding speed and wear properties of Si^sub 3^N^sub 4^ as a cutting tool.
		The wear of β-silicon nitride ceramics is caused by adhesion and microabrasion between the rubbing surfaces.
	www.redorbit.com /news/science/446144/friction_and_wear_behaviour_of_betasilicon_nitridesteel_couples_under_unlubricated/index.html?source=r_science (2821 words)

	Silicon Nitride Etch
		The rate of etching silicon nitride films depends on the exact stoichiometry of the films, the substrate temperature during deposition, and the density of the films.
		From Equation 1 it can be seen that water is hydrolyzing the silicon nitride to form hydrous silica and ammonia, the ammonia remains in the solution in the form of ammonium phosphate.
		However, it is important to remember that while a more dilute acid concentration results in a higher nitride etch rate there is a limit as to how much water can be added at a given temperature.
	www.bold-tech.com /noframes/technical/silicon_nitride.html (1286 words)

	Boron Nitride Nanotubes More Amenable Than Carbon
		Boron nitride is a binary chemical compound, consisting of equal proportions of boron and nitrogen, with composition BN.
		However, different from their carbon analogues, boron nitride nanotubes are wide-gap semiconductors with a quasiparticle band gap of about 5.5 eV.
		Boron nitride is far more resistant to oxidation than carbon and therefore suited for high temperature applications in which carbon nanostructures would burn.
	www.physorg.com /news92.html (895 words)

	Method for forming self-aligned, dual silicon nitride liner for cmos devices patent invention
		Thus, the first type nitride liner over the PFET devices is formed in a manner so as to achieve a compressive stress, while the second type nitride liner over the NFET devices is formed in a manner so as to achieve a tensile stress.
		The two nitride liners are joined at sharply defined, self-aligned interface therebetween, thus forming a continuous and uniform single nitride layer so as not to complicate subsequent contact etching processes and/or result in additionally restrictive ground rules.
		The oxide layer 118 and underlying tensile nitride layer 116 are then lithographically patterned with a hardened photoresist layer (not shown), wherein the exposed portions of the oxide/nitride stack over the PFET device 104 are removed (e.g., by etching, with the salicided gate and diffusion regions serving as an etch stop) as shown in FIG.
	www.freshpatents.com /Method-for-forming-self-aligned-dual-silicon-nitride-liner-for-cmos-devices-dt20060907ptan20060199320.php (2413 words)

	BORON NITRIDE POWDER UNIQUE
		In vacuum atmospheres, boron nitride can be used to nearly 1400 C (2550 F) before sublimation, and in oxidizing atmospheres, use temperature is approximately 1100 C (2000 F).
		BORON NITRIDE is completely inorganic and inert, is totally non-wetted by molten aluminum, magnesium, and their drosses, and offers exceptional non-reaction by most molten metals and slags.
		BORON NITRIDE is commonly used as a release agent and as a container material for molten salts, cryolite, aluminum, magnesium, silicon, iron, steels, copper, non-lead glasses, germanium, indium, antimony, tin, cadmium, and metal oxides, as well as many other materials.
	bnpowder.com /bn_unique.html (337 words)

	Inorganic layer composed of nitride (EPO) - PatentStorm (Site not responding. Last check: )
		Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films...
		A bipolar transistor is formed from epitaxial cubic boron nitride grown on a silicon substrate which is a three to two commensurate layer deposited by pulsed laser evaporation techniques.
		A thin X-ray amorphous aluminum nitride or aluminum silicon nitride film is produced on a surface by vaporization of aluminum or of aluminum and silicon by reactive sputtering or reactive magnetron sputtering under reduced pressure in a process gas atmosphere, so that a sputter gas results, and...
	www.patentstorm.us /class/257/E21.292-Inorganic_layer_composed_of_nitride_(EPO).html (2350 words)

	Black nitride hydraulic cylinder rods
		Black nitride is a relatively recent alternative to the hard chrome plated cylinder rod.
		Black nitriding is an atmospheric furnace treatment developed and patented in the early 1980's.
		The steel's surface is converted to iron nitride to a depth of typically 0.001".
	www.hydraulicsupermarket.com /black-nitride.html (323 words)

	Boron Nitride (BN) - Properties and Information on Boron Nitride (Site not responding. Last check: )
		Boron and nitrogen are neighbours of carbon in the periodic table - in combination boron and nitrogen have the same number of outer shell electrons - the atomic radii of boron and nitrogen are similar to that of carbon.
		It is not surprising therefore that boron nitride and carbon exhibit similarity in their crystal structure.
		The synthesis of hexagonal boron nitride powder is achieved by nitridation or ammonalysis of boric oxide at elevated temperature.
	www.azom.com /details.asp?ArticleID=78 (700 words)

	Boron nitride
		One of the most well-known characteristics of hexagonal boron nitride is the very bad wettability by metal melts (like Al, Mg, Zn, Pb and Cu), slags as well as salt melts.
		Boron nitride is stable at air to approx.
		Cubic boron nitride, also called borazon, is a hard material of high microhardness and used for grinding applications.
	www.a-m.de /englisch/lexikon/bornitrid.htm (263 words)

	IEEE Spectrum: The Great Gallium Nitride Gamble (Site not responding. Last check: )
		Gallium nitride is called a "wide bandgap" material because the difference between the valence and conduction bands is great—so great, in fact, that photons of visible light just slip right through the material without being absorbed.
		Gallium nitride and sapphire have different crystal structures: the distance between the atoms in the sapphire crystal is 16 percent greater than that in gallium nitride.
		To make the gallium nitride crystals, gallium metal and gallium nitride powder are combined with ammonia and ammonium chloride at moderately high temperatures of from 300 to 500 ºC and pressures of 200 to 500 megaPascals (about 20005000 atmospheres).
	staging.spectrum.ieee.org /jan04/3913 (3315 words)

	SPI Silicon Nitride Membrane Window Grids for TEM - SPI Supplies
		For high temperature applications, we believe that the nitride membranes are stable up to at least 1000°C. We are happy to report some new information that validates the robust nature of the most recent batches of the membrane windows.
		The SPI Supplies Brand of silicon nitride membrane window grids can be used to create a unique environmental chamber or "wet cells" which permit the BSE imaging of cells and other wet samples at resolutions heretofore just not possible.
		There are occasionally small pieces of nitride scattered around from the snap out corners (that make the frames rounded) and the presence of such debris particles can't be prevented, but at the same time, should not pose any problems or interference to the user.
	www.2spi.com /catalog/instruments/silicon-nitride.shtml (2874 words)

	Silicon Nitride
		This microstructure toughens the silicon nitride by a crack deflection process similar to that found in composite materials.
		The result is a monolithic silicon nitride ceramic having exceptional hardness and superb fracture toughness that translates to superior mechanical reliability.
		Ceralloy® 147 Reaction Bonded Silicon Nitride (RBSN) is a high purity grade of silicon nitride having a density of approximately 70-80% theoretical.
	www.ceradyne.com /materials/silicon-nitride.aspx (274 words)

	Boron Nitride
		BORON NITRIDE is simultaneously a superb dielectric and heat insulator owing to what it serves a unique material to be used in electronic devices of a special destination.
		BORON NITRIDE is a nontoxic, inert to the majority of melted metals and chemical reagents substance.
		High quality superhard Wurtzitesimilar Boron nitride is used as an initial material for polycrystal synthesis and blade tools which works in the conditions of impact loading.
	www.abrasive.zp.ua /eng/products/boron_nitride.html (170 words)

	Gallium Nitride: Novel Material for the New Millenium
		Gallium nitride amplifiers are expected to become the amplifier of choice for many of these applications.
		Gallium nitride promises big improvements in the performance of ultra-wide bandwidth communications and radar systems because it can deliver up to 10 times as much power at microwave frequencies as the silicon and gallium-arsenide semiconductors now used in cellular telephones, military radar systems, and satellite transmitters.
		Due to gallium nitride's chemical composition, scientists also expect the material to exhibit greater "radiation hardness," an attribute that is highly desirable for applications in outer space where components must operate reliably in radioactive environments.
	www.spacedaily.com /news/materials-01a.html (1264 words)

Try your search on: Qwika (all wikis)